title: GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells.
abstract: In this paper, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO(2) nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of the GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays offers great improvements in efficiency relative to a conventional planar cell. Compared to the planar GaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sun illumination is improved from 0.29% to 5.8%.
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, 10617, Republic of China.
authors.forename: Jiun-Jie
authors.initials: JJ
authors.lastname: Chao
authors.forename: Shu-Chia
authors.initials: SC
authors.lastname: Shiu
authors.forename: Shih-Che
authors.initials: SC
authors.lastname: Hung
authors.forename: Ching-Fuh
authors.initials: CF
authors.lastname: Lin