title: Evaluations of frequency shift and stability in rubidium vapor stabilized semiconductor lasers.
abstract: Laser frequencies were stabilized to the linear and saturated absorption spectral lines(LAS, SAS) in (87)Rb vapors which were filled into two kinds of glass cell: cell A ((87)Rb vapor only) and cell B ((87)Rb vapor and buffer gases). The frequency shifts induced by the change of laser power density were -5 MHz/(mW/cm(2)) and - 10 MHz/(mW/cm(2)) for cells A and B, respectively, when LAS was used. A frequency shift of -0.8 MHz/K was observed for cell B, which underwent a temperature change. However, such a temperature-induced shift was not observed for cell A. The highest frequency stability was 7.7 x 10(-11) at a 70-s integration time.
authors.forename: H
authors.initials: H
authors.lastname: Furuta
authors.forename: M
authors.initials: M
authors.lastname: Ohtsu