Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.
We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current-gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.
Liang
Xiaogan
X
Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. xliang@lbl.gov
Jung
Yeon-Sik
YS
Wu
Shiwei
S
Ismach
Ariel
A
Olynick
Deirdre L
DL
Cabrini
Stefano
S
Bokor
Jeffrey
J