Evaluations of frequency shift and stability in rubidium vapor stabilized semiconductor lasers.
Laser frequencies were stabilized to the linear and saturated absorption spectral lines(LAS, SAS) in (87)Rb vapors which were filled into two kinds of glass cell: cell A ((87)Rb vapor only) and cell B ((87)Rb vapor and buffer gases). The frequency shifts induced by the change of laser power density were -5 MHz/(mW/cm(2)) and - 10 MHz/(mW/cm(2)) for cells A and B, respectively, when LAS was used. A frequency shift of -0.8 MHz/K was observed for cell B, which underwent a temperature change. However, such a temperature-induced shift was not observed for cell A. The highest frequency stability was 7.7 x 10(-11) at a 70-s integration time.
Furuta
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Ohtsu
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