title: Two-dimensional spatial light modulators fabricated in Si/PLZT.
abstract: We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 x 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm(2)/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 x 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.
authors.forename: T H
authors.initials: TH
authors.lastname: Lin
authors.forename: A
authors.initials: A
authors.lastname: Ersen
authors.forename: J H
authors.initials: JH
authors.lastname: Wang
authors.forename: S
authors.initials: S
authors.lastname: Dasgupta
authors.forename: S
authors.initials: S
authors.lastname: Esener
authors.forename: S H
authors.initials: SH
authors.lastname: Lee