Self assembly of nano metric metallic particles for realization of photonic and electronic nano transistors.
In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, where metallic nano particles are self assembled due to implantation of positive gallium ions into the insulating material (e.g., silica as in silicon on insulator wafers) that acts as intermediary layer between the substrate and the negatively charge metallic nanoparticles.
Shahmoon
Asaf
A
School of Engineering, Bar-Ilan University, Ramat-Gan 52900, Israel; E-Mail: asaf.sh11@gmail.com (A.S.).
Limon
Ofer
O
Girshevitz
Olga
O
Zalevsky
Zeev
Z
D005708:Gallium / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry*; D055095:Optics and Photonics / Q000295:instrumentation / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D014173:Transistors, Electronic
D012822:Silicon Dioxide; D005708:Gallium; D012825:Silicon