Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.
Liu
Juqing
J
Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210046, China.
Yin
Zongyou
Z
Cao
Xiehong
X
Zhao
Fei
F
Lin
Anping
A
Xie
Linghai
L
Fan
Quli
Q
Boey
Freddy
F
Zhang
Hua
H
Huang
Wei
W
D016248:Computer Storage Devices; D004553:Electric Conductivity; D004566:Electrodes; D037741:Fullerenes / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D013876:Thiophenes / Q000737:chemistry*
C539575:(6,6)-phenyl C61-butyric acid methyl ester; D037741:Fullerenes; D010087:Oxides; D013876:Thiophenes; C507295:poly(3-hexylthiophene); D006108:Graphite