title: p-type semiconducting GeSe combs by a vaporization-condensation-recrystallization (VCR) process.
authors.affiliation: Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Nam-Gu, Pohang 790-784, Korea.
authors.forename: Seok Min
authors.initials: SM
authors.lastname: Yoon
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Song
authors.forename: Hee Cheul
authors.initials: HC
authors.lastname: Choi
mesh_terms: D003460:Crystallization; D005740:Gases / Q000737:chemistry*; D005857:Germanium / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry*; D012666:Semiconductors; D014961:X-Ray Diffraction
chemical_list: D005740:Gases; D018036:Selenium Compounds; D005857:Germanium