Ultrafast amorphization in Ge(10)Sb(2)Te(13) thin film induced by single femtosecond laser pulse.
We demonstrate amorphization in a Ge(10)Sb(2)Te(13) (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5ps of this drop.
Konishi
Mitsutaka
M
Graduate School of Science and Technology, Keio University, Hiyoshi, Kohoku,Yokohama, Kanagawa 223-8522, Japan.
Santo
Hisashi
H
Hongo
Yuki
Y
Tajima
Kazuyuki
K
Hosoi
Masaharu
M
Saiki
Toshiharu
T