Analytical derivation of the structure of carrier lifetime and its nonlinear dependence on optical field intensity in semiconductor laser structures.
The dependence of spontaneous carrier lifetime tau(s) on the electromagnetic field in the laser cavity is discussed in the framework of a microscopic approach to laser dynamics. An analytical relationship between tau(s) and the number of photons in the laser cavity is derived. The structure of tau(s) suggests new experiments for the determination of microscopic parameters of the active region material (e.g., the intraband carrier lifetime tau(in)). This relationship is nonlinear and does not exhibit any kind of singularity or discontinuity, as sometimes reported in the literature. The comparison between theory and experimental results is discussed.
Chiaretti
G
G
Reichenbach
D
D
Vaccarino
C
C
Milani
M
M