title: High-resolution study of dynamical diffraction phenomena accompanying the Renninger (222/113) case of three-beam diffraction in silicon.
abstract: X-ray optical schemes capable of producing a highly monochromatic beam with high angular collimation in both the vertical and horizontal planes have been evaluated and utilized to study high-resolution diffraction phenomena in the Renninger (222/113) case of three-beam diffraction in silicon. The effect of the total reflection of the incident beam into the nearly forbidden reflected beam was observed for the first time with the maximum 222 reflectivity at the 70% level. We have demonstrated that the width of the 222 reflection can be varied many times by tuning the azimuthal angle by only a few microrad in the vicinity of the three-beam diffraction region. This effect, predicted theoretically more than 20 years ago, is explained by the enhancement of the 222 scattering amplitude due to the virtual two-stage 000 -->113 -->222 process which depends on the azimuthal angle.
authors.affiliation: Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853, USA. ayk7@cornell.edu
authors.forename: A
authors.initials: A
authors.lastname: Kazimirov
authors.forename: V G
authors.initials: VG
authors.lastname: Kohn
mesh_terms: D018360:Crystallography, X-Ray; D017711:Nonlinear Dynamics; D012825:Silicon / Q000737:chemistry*; D017356:Synchrotrons
chemical_list: D012825:Silicon