title: Hysteresis-free operation of suspended carbon nanotube transistors.
abstract: Single-walled carbon nanotubes offer high sensitivity and very low power consumption when used as field-effect transistors in nanosensors. Suspending nanotubes between pairs of contacts, rather than attaching them to a surface, has many advantages in chemical, optical or displacement sensing applications, as well as for resonant electromechanical systems. Suspended nanotubes can be integrated into devices after nanotube growth, but contamination caused by the accompanying additional process steps can change device properties. Ultraclean suspended nanotubes can also be grown between existing device contacts, but high growth temperatures limit the choice of metals that can be used as contacts. Moreover, when operated in ambient conditions, devices fabricated by either the post- or pre-growth approach typically exhibit gate hysteresis, which makes device behaviour less reproducible. Here, we report the operation of nanotube transistors in a humid atmosphere without hysteresis. Suspended, individual and ultraclean nanotubes are grown directly between unmetallized device contacts, onto which palladium is then evaporated through self-aligned on-chip shadow masks. This yields pairs of needle-shaped source/drain contacts that have been theoretically shown to allow high nanotube-gate coupling and low gate voltages. This process paves the way for creating ultrasensitive nanosensors based on pristine suspended nanotubes.
authors.affiliation: Micro and Nanosystems, Department of Mechanical and Process Engineering, ETH Zurich, Zurich, Switzerland. matthias.muoth@micro.mavt.ethz.ch
authors.forename: M
authors.initials: M
authors.lastname: Muoth
authors.forename: T
authors.initials: T
authors.lastname: Helbling
authors.forename: L
authors.initials: L
authors.lastname: Durrer
authors.forename: S-W
authors.initials: SW
authors.lastname: Lee
authors.forename: C
authors.initials: C
authors.lastname: Roman
authors.forename: C
authors.initials: C
authors.lastname: Hierold
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008839:Microelectrodes; D008962:Models, Theoretical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D017711:Nonlinear Dynamics; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances