High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides.
We demonstrate a very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25microm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.
Feng
Ning-Ning
NN
Kotura Inc., 2630 Corporate Place, Monterey Park, CA 91754, USA. nfeng@kotura.com
Liao
Shirong
S
Feng
Dazeng
D
Dong
Po
P
Zheng
Dawei
D
Liang
Hong
H
Shafiiha
Roshanak
R
Li
Guoliang
G
Cunningham
John E
JE
Krishnamoorthy
Ashok V
AV
Asghari
Mehdi
M