title: Direct low-temperature nanographene CVD synthesis over a dielectric insulator.
abstract: Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
authors.affiliation: IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany. m.ruemmeli@ifw-dresden.de
authors.forename: Mark H
authors.initials: MH
authors.lastname: Rümmeli
authors.forename: Alicja
authors.initials: A
authors.lastname: Bachmatiuk
authors.forename: Andrew
authors.initials: A
authors.lastname: Scott
authors.forename: Felix
authors.initials: F
authors.lastname: Börrnert
authors.forename: Jamie H
authors.initials: JH
authors.lastname: Warner
authors.forename: Volker
authors.initials: V
authors.lastname: Hoffman
authors.forename: Jarrn-Horng
authors.initials: JH
authors.lastname: Lin
authors.forename: Gianaurelio
authors.initials: G
authors.lastname: Cuniberti
authors.forename: Bernd
authors.initials: B
authors.lastname: Büchner
mesh_terms: D000114:Acetylene / Q000737:chemistry; D002244:Carbon / Q000737:chemistry*; D017097:Electric Impedance; D008277:Magnesium Oxide / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D013059:Spectrum Analysis, Raman; D013696:Temperature; D014835:Volatilization
chemical_list: D008277:Magnesium Oxide; D002244:Carbon; D000114:Acetylene