title: Pulsed pumping of silicon nanocrystal light emitting devices.
abstract: Typical silicon nanocrystal light emitting devices (LEDs) operate under direct current (DC) biasing conditions that require high electric fields or high current densities. The electroluminescence (EL) under these conditions relies on impact excitation that can be damaging to the material. In this work, we present bipolar injection into silicon nanocrystal LEDs using a pulsed pumping scheme. We measured the frequency dependence of the integrated and time-resolved EL of the LEDs. The frequency dependent behavior of the time-resolved characteristics is used to explain the integrated EL measurements. In addition, the light output of the device was measured under pulsed excitation and was found to increase by a factor of 18 as compared to the case of DC excitation.
authors.affiliation: Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA. tcreazzo@udel.edu
authors.forename: Tim
authors.initials: T
authors.lastname: Creazzo
authors.forename: Brandon
authors.initials: B
authors.lastname: Redding
authors.forename: Elton
authors.initials: E
authors.lastname: Marchena
authors.forename: Janusz
authors.initials: J
authors.lastname: Murakowski
authors.forename: Dennis W
authors.initials: DW
authors.lastname: Prather
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon
chemical_list: D012825:Silicon