title: Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
abstract: An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).
authors.affiliation: Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan. tanabe@iis.u-tokyo.ac.jp
authors.forename: Katsuaki
authors.initials: K
authors.lastname: Tanabe
authors.forename: Denis
authors.initials: D
authors.lastname: Guimard
authors.forename: Damien
authors.initials: D
authors.lastname: Bordel
authors.forename: Satoshi
authors.initials: S
authors.lastname: Iwamoto
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D053844:Lasers, Solid-State; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon