Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography.
A novel top-down approach for the controllable fabrication of semiconductor nanostructures exhibiting quantum effects is described. By decomposing metal-rich precursor gas molecules with an electron beam, a sub-10 nm metal pattern can be formed and subsequently transferred to a semiconductor substrate. In such a way monocrystalline silicon nanodots and nanowires are produced as revealed by transmission electron microscopy. It is also shown how through controlled thermal or chemical oxidation the nanostructure surface can be passivated. By providing direct access to the sub-10 nm size range this method possesses promising potential for application in the quantum dot and nanoelectronics fields.
Sychugov
I
I
Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0003, Japan.
Nakayama
Y
Y
Mitsuishi
K
K