title: Coaxial ZnSe/Si nanocables with controlled p-type shell doping.
abstract: Coaxial ZnSe/Si nanocables were successfully produced by a simple two-step growth method. ZnSe nanowire cores were first synthesized by thermal evaporation and then followed by the chemical vapor deposition (CVD) growth of Si shells. The former have a cubic single-crystal structure with a longitudinal direction of [Formula: see text], while the latter are polycrystalline and composed of a large number of Si crystal grains with dominantly (111) surfaces. Controlled p-type doping to the Si shells was implemented by B diffusion after the shell growth. Electrical measurements on the Si shells demonstrated that the shell conductivity could be tuned in a wide range of eight orders of magnitude by adjusting the B concentration, and a hole mobility of 11.7 cm(2) V( - 1) s( - 1) and a hole concentration of 2 x 10(15) cm( - 3) were revealed for the modestly doped Si shells. The ZnSe/Si core/shell nanocables have great potential in nano-optoelectronic applications.
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui, 230009, People's Republic of China.
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: Jiansheng
authors.initials: J
authors.lastname: Jie
authors.forename: Chunyan
authors.initials: C
authors.lastname: Wu
authors.forename: Zhi
authors.initials: Z
authors.lastname: Wang
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Yu
authors.forename: Qiang
authors.initials: Q
authors.lastname: Peng
authors.forename: Xiwei
authors.initials: X
authors.lastname: Zhang
authors.forename: Zhizhong
authors.initials: Z
authors.lastname: Hu
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.forename: Huier
authors.initials: H
authors.lastname: Guo
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang