title: Band-edge lasers based on randomly mixed photonic crystals.
abstract: By employing two-dimensional InGaAsP photonic band-edge lasers, we have experimentally demonstrated that a random mixture of two different photonic crystals (PCs) possesses a new band structure that is intermediate to that of the two host PCs. The photonic band-edges shift monotonically, but with a strong bowing effect, as the mixed PC system is systematically transformed from one PC to the other. The experimental observations are in excellent agreement with finite-difference time-domain simulations and model calculations based on virtual-crystal approximation with compositional disorder effect included.
authors.affiliation: Department of Physics and Astronomy & Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-747, Korea.
authors.forename: Sunghwan
authors.initials: S
authors.lastname: Kim
authors.forename: Sungjoon
authors.initials: S
authors.lastname: Yoon
authors.forename: Hyojun
authors.initials: H
authors.lastname: Seok
authors.forename: Jeongkug
authors.initials: J
authors.lastname: Lee
authors.forename: Heonsu
authors.initials: H
authors.lastname: Jeon