Numerical study on heterodyne terahertz detection in field effect transistor.
Numerical method on the heterodyne terahertz detection characteristics of field effect characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.
Yan
Zhifeng
Z
The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, P R China.
Zhu
Jingxuan
J
Wang
Yinglei
Y
Lin
Xinnan
X
He
Jin
J
Cao
Juncheng
J