High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks.
We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode.
Dutta
Neilanjan
N
Department of Electrical Engineering, University of Delaware, Newark, DE 19716, USA. dutta@ee.udel.edu
Murakowski
Janusz A
JA
Shi
Shouyuan
S
Prather
Dennis W
DW
D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D053844:Lasers, Solid-State; D008670:Metals / Q000737:chemistry
D001152:Arsenicals; D008670:Metals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum