title: Synthesis and Characterization of Tin Disulfide (SnS(2)) Nanowires.
abstract: The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS(2) nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).
authors.forename: Ya-Ting
authors.initials: YT
authors.lastname: Lin
authors.forename: Jen-Bin
authors.initials: JB
authors.lastname: Shi
authors.forename: Yu-Cheng
authors.initials: YC
authors.lastname: Chen
authors.forename: Chih-Jung
authors.initials: CJ
authors.lastname: Chen
authors.forename: Po-Feng
authors.initials: PF
authors.lastname: Wu