title: InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers.
abstract: We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm(3+) doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 microJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.
authors.affiliation: National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China. yaobq08@hit.edu.cn
authors.forename: Baoquan
authors.initials: B
authors.lastname: Yao
authors.forename: Yi
authors.initials: Y
authors.lastname: Tian
authors.forename: Gang
authors.initials: G
authors.lastname: Li
authors.forename: Yuezhu
authors.initials: Y
authors.lastname: Wang
mesh_terms: D001151:Arsenic; D004867:Equipment Design; D005682:Gadolinium; D007204:Indium; D054023:Lasers, Semiconductor; D053844:Lasers, Solid-State; D055095:Optics and Photonics / Q000295:instrumentation* / Q000379:methods*; D012666:Semiconductors
chemical_list: D007204:Indium; D005682:Gadolinium; D001151:Arsenic