Considerable Enhancement of Field Emission of SnO(2) Nanowires by Post-Annealing Process in Oxygen at High Temperature.
The field emission properties of SnO(2) nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2) nanowires, the turn-on and threshold field were 4.03 and 5.4 V/mum, respectively. Considerable enhancement of field emission of SnO(2) nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO(2) nanowires were post-annealed at 1,000 degrees C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/mum, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2) at the same applied electric field of 5.0 V/mum.
Wang
J B
JB
Li
K
K
Zhong
X L
XL
Zhou
Y C
YC
Fang
X S
XS
Tang
C C
CC
Bando
Y
Y