Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.
We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources.
Sun
Hong-Tao
HT
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan. timothyhsun@gmail.com
Shimaoka
Fumiaki
F
Miwa
Yuji
Y
Ruan
Jian
J
Fujii
Minoru
M
Qiu
Jianrong
J
Hayashi
Shinji
S