title: SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black.
abstract: SiC nanowires have been synthesized at 1,600 degrees C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO(2) nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.
authors.affiliation: National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240 People's Republic of China.
authors.forename: Feng-Lei
authors.initials: FL
authors.lastname: Wang
authors.forename: Li-Ying
authors.initials: LY
authors.lastname: Zhang
authors.forename: Ya-Fei
authors.initials: YF
authors.lastname: Zhang