1.54 microm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)(3)phen as emitter and Bphen as electron transport material.
1.54 microm Si-anode organic light emitting devices with Er(DBM)(3)phen: Bphen and Bphen/Bphen:Cs(2)CO(3) as the emissive and electron transport layers (the devices are referred to as the Bphen-based devices) have been investigated. In comparison with the AlQ-based devices with the same structure but with AlQ:Er(DBM)(3)Phen and AlQ as the emissive and electron transport layers, the maximum EL intensity and maximum power efficiency from the Bphen-based devices increase by a factor of 3 and 2.2, respectively. The optimized p-Si anode resistivity of the Bphen-based device of 10 Omega.cm is significantly lower than that of the AlQ-based device. The NIR EL improvement can be attributed to the energy transfer from Bphen to the Er complex and equilibrium of electron injection from the Sm/Au cathode and hole injection from the p-Si anode at a higher level.
Wei
F
F
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, People's Republic of China.
Li
Y Z
YZ
Ran
G Z
GZ
Qin
G G
GG
D004579:Electron Transport; D004871:Erbium / Q000737:chemistry*; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D009930:Organic Chemicals / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D019265:Spectroscopy, Near-Infrared; D013059:Spectrum Analysis, Raman
D009930:Organic Chemicals; D004871:Erbium; D012825:Silicon