title: Identification of III-N nanowire growth kinetics via a marker technique.
abstract: By using a marker technique based on nanowire (NW) heterostructure, we have identified the Ga-limited and N-limited GaN NW growth regimes, which are shifted in comparison to those in two-dimensional GaN layers. The results show that the Ga atoms diffusing along NW sidewalls have a significant contribution to the NW vertical growth. By reducing the substrate temperature, Ga-rich conditions locally activate the lateral growth. In contrast to Ga atoms, the contribution of Al and N adatom diffusion to the NW vertical growth is negligible. Finally, the control of GaN/AlN heterostructures in NWs is demonstrated.
authors.affiliation: CEA-CNRS Group Nanophysics and Semiconductors, Institute Néel, 25 Rue des Martyrs, 38042, Grenoble cedex 9, France. rudeesun.songmuang@grenoble.cnrs.fr
authors.forename: R
authors.initials: R
authors.lastname: Songmuang
authors.forename: T
authors.initials: T
authors.lastname: Ben
authors.forename: B
authors.initials: B
authors.lastname: Daudin
authors.forename: D
authors.initials: D
authors.lastname: González
authors.forename: E
authors.initials: E
authors.lastname: Monroy