title: One-Dimensional Nanostructures and Devices of II-V Group Semiconductors.
abstract: The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn(3)P(2) nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
authors.affiliation: Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 People's Republic of China.
authors.forename: Guozhen
authors.initials: G
authors.lastname: Shen
authors.forename: Di
authors.initials: D
authors.lastname: Chen