title: Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure.
abstract: Surface phonon polariton (SPP) characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In(0.04)Al(0.06)Ga(0.90)N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al(2)O(3) SPP mode, In(0.04)Al(0.06)Ga(0.90)N/Al(2)O(3) interface mode, and Al(2)O(3) bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.
authors.affiliation: Nano-Optoelectronic Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia. shashiong@yahoo.com
authors.forename: S S
authors.initials: SS
authors.lastname: Ng
authors.forename: S C
authors.initials: SC
authors.lastname: Lee
authors.forename: S K Mohd
authors.initials: SK
authors.lastname: Bakhori
authors.forename: Z
authors.initials: Z
authors.lastname: Hassan
authors.forename: H
authors.initials: H
authors.lastname: Abu Hassan
authors.forename: V A
authors.initials: VA
authors.lastname: Yakovlev
authors.forename: N N
authors.initials: NN
authors.lastname: Novikova
authors.forename: E A
authors.initials: EA
authors.lastname: Vinogradov
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D003198:Computer Simulation; D007204:Indium / Q000737:chemistry*; D008420:Manufactured Materials / Q000032:analysis; D008422:Materials Testing; D008956:Models, Chemical; D017785:Photons; D020349:Surface Plasmon Resonance / Q000379:methods*
chemical_list: D007204:Indium; D000535:Aluminum