Magnetoresistance in Sn-Doped In2O3Nanowires.
In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
Berengue
Olívia M
OM
Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil. oliberengue@yahoo.com.br.
Lanfredi
Alexandrejc
A
Pozzi
Livia P
LP
Rey
Joséfq
J
Leite
Edson R
ER
Chiquito
Adenilson J
AJ