title: Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire.
abstract: We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor-liquid-solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.
authors.forename: I
authors.initials: I
authors.lastname: Shalish
authors.forename: G
authors.initials: G
authors.lastname: Seryogin
authors.forename: W
authors.initials: W
authors.lastname: Yi
authors.forename: J M
authors.initials: JM
authors.lastname: Bao
authors.forename: M A
authors.initials: MA
authors.lastname: Zimmler
authors.forename: E
authors.initials: E
authors.lastname: Likovich
authors.forename: D C
authors.initials: DC
authors.lastname: Bell
authors.forename: F
authors.initials: F
authors.lastname: Capasso
authors.forename: V
authors.initials: V
authors.lastname: Narayanamurti