title: Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
abstract: A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.
authors.affiliation: Research Center for Si Nano-science, Advanced Research Laboratories, Tokyo City University, Setagaya-ku, Tokyo, Japan. jinsongxia@gmail.com
authors.forename: Jinsong
authors.initials: J
authors.lastname: Xia
authors.forename: Yuuki
authors.initials: Y
authors.lastname: Takeda
authors.forename: Noritaka
authors.initials: N
authors.lastname: Usami
authors.forename: Takuya
authors.initials: T
authors.lastname: Maruizumi
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Shiraki
mesh_terms: D003198:Computer Simulation; D004867:Equipment Design; D005857:Germanium; D008163:Luminescent Measurements / Q000295:instrumentation*; D008855:Microscopy, Electron, Scanning; D008904:Miniaturization / Q000295:instrumentation; D055095:Optics and Photonics / Q000295:instrumentation*; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
chemical_list: D005857:Germanium; D012825:Silicon