High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.
Kim
Sun-Kyung
SK
Advanced Technology Lab, LED Division, LG Innotek, Seoul 137-724, Korea. jclub79@gmail.com
Lee
Jin Wook
JW
Ee
Ho-Seok
HS
Moon
Yong-Tae
YT
Kwon
Soon-Hong
SH
Kwon
Hoki
H
Park
Hong-Gyu
HG
D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
C473348:gallium nitride; D005708:Gallium