title: Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.
abstract: Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
authors.affiliation: Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan. shihyen@gate.sinica.edu.tw
authors.forename: Shih-Yen
authors.initials: SY
authors.lastname: Lin
authors.forename: Chi-Che
authors.initials: CC
authors.lastname: Tseng
authors.forename: Tung-Hsun
authors.initials: TH
authors.lastname: Chung
authors.forename: Wen-Hsuan
authors.initials: WH
authors.lastname: Liao
authors.forename: Shu-Han
authors.initials: SH
authors.lastname: Chen
authors.forename: Jen-Inn
authors.initials: JI
authors.lastname: Chyi