Direct low-temperature nanographene CVD synthesis over a dielectric insulator.
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
Rümmeli
Mark H
MH
IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany. m.ruemmeli@ifw-dresden.de
Bachmatiuk
Alicja
A
Scott
Andrew
A
Börrnert
Felix
F
Warner
Jamie H
JH
Hoffman
Volker
V
Lin
Jarrn-Horng
JH
Cuniberti
Gianaurelio
G
Büchner
Bernd
B
D000114:Acetylene / Q000737:chemistry; D002244:Carbon / Q000737:chemistry*; D017097:Electric Impedance; D008277:Magnesium Oxide / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D013059:Spectrum Analysis, Raman; D013696:Temperature; D014835:Volatilization
D008277:Magnesium Oxide; D002244:Carbon; D000114:Acetylene