title: Considerable Enhancement of Field Emission of SnO(2) Nanowires by Post-Annealing Process in Oxygen at High Temperature.
abstract: The field emission properties of SnO(2) nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2) nanowires, the turn-on and threshold field were 4.03 and 5.4 V/mum, respectively. Considerable enhancement of field emission of SnO(2) nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO(2) nanowires were post-annealed at 1,000 degrees C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/mum, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2) at the same applied electric field of 5.0 V/mum.
authors.forename: J B
authors.initials: JB
authors.lastname: Wang
authors.forename: K
authors.initials: K
authors.lastname: Li
authors.forename: X L
authors.initials: XL
authors.lastname: Zhong
authors.forename: Y C
authors.initials: YC
authors.lastname: Zhou
authors.forename: X S
authors.initials: XS
authors.lastname: Fang
authors.forename: C C
authors.initials: CC
authors.lastname: Tang
authors.forename: Y
authors.initials: Y
authors.lastname: Bando