title: Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale.
abstract: Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.
authors.affiliation: Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, T6G 2V4, Canada. mhwu@ualberta.ca
authors.forename: Marcelo
authors.initials: M
authors.lastname: Wu
authors.forename: Zhanghua
authors.initials: Z
authors.lastname: Han
authors.forename: Vien
authors.initials: V
authors.lastname: Van
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D018511:Systems Integration