High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes.
We fabricated InGaN/GaN nanorod light emitting diode (LED) arrays using nanosphere lithography for nanorod formation, PECVD (plasma enhanced chemical vapor deposition) grown SiO(2) layer for sidewall passivation, and chemical mechanical polishing for uniform nanorod contact. The nano-device demonstrates a reverse current 4.77nA at -5V, an ideality factor 7.35, and an optical output intensity 6807mW/cm(2) at the injection current density 32A/cm(2) (20mA). Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.
Chen
Liang-Yi
LY
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, 106, Taiwan. jjhuang@cc.ee.ntu.edu.tw
Huang
Ying-Yuan
YY
Chang
Chun-Hsiang
CH
Sun
Yu-Hsuan
YH
Cheng
Yun-Wei
YW
Ke
Min-Yung
MY
Chen
Cheng-Pin
CP
Huang
Jianjang
J