title: Broadband external cavity tunable quantum dot lasers with low injection current density.
abstract: Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to ~150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China. pengjin@red.semi.ac.cn
authors.forename: X Q
authors.initials: XQ
authors.lastname: Lv
authors.forename: P
authors.initials: P
authors.lastname: Jin
authors.forename: W Y
authors.initials: WY
authors.lastname: Wang
authors.forename: Z G
authors.initials: ZG
authors.lastname: Wang