title: Synthesis of indium nanowires by galvanic displacement and their optical properties.
abstract: Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L-1In2(SO4)3-0.002 mol L-1SeO2-0.02 mol L-1SDS-0.01 mol L-1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template).
authors.affiliation: School of Chemistry and Chemical Engineering / MOE of Key Laboratory of Bioinorganic and Synthetic Chemistry, Sun Yat-Sen University, Guangzhou, 510275, China. cesdhx@mail.sysu.edu.cn.
authors.forename: Haohua
authors.initials: H
authors.lastname: Li
authors.forename: Chaolun
authors.initials: C
authors.lastname: Liang
authors.forename: Meng
authors.initials: M
authors.lastname: Liu
authors.forename: Kuan
authors.initials: K
authors.lastname: Zhong
authors.forename: Yexiang
authors.initials: Y
authors.lastname: Tong
authors.forename: Peng
authors.initials: P
authors.lastname: Liu
authors.forename: Greg A
authors.initials: GA
authors.lastname: Hope