100 nm period grating by high-index phase-mask immersion lithography.
The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.
Bourgin
Yannick
Y
Université de Lyon, Laboratoire Hubert Curien, UMR CNRS 5516, Saint-Etienne, France.
Jourlin
Yves
Y
Parriaux
Olivier
O
Talneau
Anne
A
Tonchev
Svetlen
S
Veillas
Colette
C
Karvinen
Petri
P
Passilly
Nicolas
N
Md Zain
Ahmad R
AR
De La Rue
Richard M
RM
Van Erps
Jürgen
J
Troadec
David
D
D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation*; D010781:Photography / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*