Coaxial ZnSe/Si nanocables with controlled p-type shell doping.
Coaxial ZnSe/Si nanocables were successfully produced by a simple two-step growth method. ZnSe nanowire cores were first synthesized by thermal evaporation and then followed by the chemical vapor deposition (CVD) growth of Si shells. The former have a cubic single-crystal structure with a longitudinal direction of [Formula: see text], while the latter are polycrystalline and composed of a large number of Si crystal grains with dominantly (111) surfaces. Controlled p-type doping to the Si shells was implemented by B diffusion after the shell growth. Electrical measurements on the Si shells demonstrated that the shell conductivity could be tuned in a wide range of eight orders of magnitude by adjusting the B concentration, and a hole mobility of 11.7 cm(2) V( - 1) s( - 1) and a hole concentration of 2 x 10(15) cm( - 3) were revealed for the modestly doped Si shells. The ZnSe/Si core/shell nanocables have great potential in nano-optoelectronic applications.
Wang
Li
L
School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui, 230009, People's Republic of China.
Jie
Jiansheng
J
Wu
Chunyan
C
Wang
Zhi
Z
Yu
Yongqiang
Y
Peng
Qiang
Q
Zhang
Xiwei
X
Hu
Zhizhong
Z
Wu
Di
D
Guo
Huier
H
Jiang
Yang
Y