title: High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides.
abstract: We demonstrate a very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25microm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.
authors.affiliation: Kotura Inc., 2630 Corporate Place, Monterey Park, CA 91754, USA. nfeng@kotura.com
authors.forename: Ning-Ning
authors.initials: NN
authors.lastname: Feng
authors.forename: Shirong
authors.initials: S
authors.lastname: Liao
authors.forename: Dazeng
authors.initials: D
authors.lastname: Feng
authors.forename: Po
authors.initials: P
authors.lastname: Dong
authors.forename: Dawei
authors.initials: D
authors.lastname: Zheng
authors.forename: Hong
authors.initials: H
authors.lastname: Liang
authors.forename: Roshanak
authors.initials: R
authors.lastname: Shafiiha
authors.forename: Guoliang
authors.initials: G
authors.lastname: Li
authors.forename: John E
authors.initials: JE
authors.lastname: Cunningham
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy
authors.forename: Mehdi
authors.initials: M
authors.lastname: Asghari