title: High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
abstract: We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.
authors.affiliation: Advanced Technology Lab, LED Division, LG Innotek, Seoul 137-724, Korea. jclub79@gmail.com
authors.forename: Sun-Kyung
authors.initials: SK
authors.lastname: Kim
authors.forename: Jin Wook
authors.initials: JW
authors.lastname: Lee
authors.forename: Ho-Seok
authors.initials: HS
authors.lastname: Ee
authors.forename: Yong-Tae
authors.initials: YT
authors.lastname: Moon
authors.forename: Soon-Hong
authors.initials: SH
authors.lastname: Kwon
authors.forename: Hoki
authors.initials: H
authors.lastname: Kwon
authors.forename: Hong-Gyu
authors.initials: HG
authors.lastname: Park
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium