Fullerene-derivative-embedded nanogap field-effect-transistor and its nonvolatile memory application.
Ryu
Seong-Wan
SW
Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Korea.
Kim
Chung-Jin
CJ
Kim
Sungho
S
Seo
Myungsoo
M
Yun
Changhun
C
Yoo
Seunghyup
S
Choi
Yang-Kyu
YK
D037741:Fullerenes / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D036103:Nanotechnology; D014173:Transistors, Electronic
D037741:Fullerenes