title: Using a <670> zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon.
abstract: Convergent beam electron diffraction patterns of silicon from the gate channel region of a complementary metal-oxide-semiconductor transistor with recessed Si(.82)Ge(.18) stressors were analysed using three zone axes: <230>, <340> and <670>. Values measured using these axes were compared with each other with regards to strain along the [110] and the [001] directions. It was demonstrated that strain measurements made using all three axes showed reasonable agreement with each other: an increase in the [110] compressive strain and a switch from compressive to tensile strain in the [001] with decreasing distance below the gate. It was also observed that the strain calculations using the <230> axis had the lowest uncertainty whereas the <670> axis allowed for measurements closest to the gate due to the improved lateral resolution at that tilt angle.
authors.affiliation: Center for Advanced Research and Technology (CART), University of North Texas, Denton, TX 76207, USA. david.diercks@unt.edu
authors.forename: D R
authors.initials: DR
authors.lastname: Diercks
authors.forename: M J
authors.initials: MJ
authors.lastname: Kaufman
authors.forename: R B
authors.initials: RB
authors.lastname: Irwin
authors.forename: A
authors.initials: A
authors.lastname: Jain
authors.forename: L
authors.initials: L
authors.lastname: Robertson
authors.forename: J W
authors.initials: JW
authors.lastname: Weijtmans
authors.forename: R
authors.initials: R
authors.lastname: Wise