title: Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.
abstract: We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at - 1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI, Orsay, France.
authors.forename: Andres de Luna
authors.initials: Ade L
authors.lastname: Bugallo
authors.forename: Maria
authors.initials: M
authors.lastname: Tchernycheva
authors.forename: Gwenole
authors.initials: G
authors.lastname: Jacopin
authors.forename: Lorenzo
authors.initials: L
authors.lastname: Rigutti
authors.forename: François Henri
authors.initials: FH
authors.lastname: Julien
authors.forename: Shu-Ting
authors.initials: ST
authors.lastname: Chou
authors.forename: Yuan-Ting
authors.initials: YT
authors.lastname: Lin
authors.forename: Po-Han
authors.initials: PH
authors.lastname: Tseng
authors.forename: Li-Wei
authors.initials: LW
authors.lastname: Tu