title: Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al2O3:Er3+ on silicon.
abstract: We report the realization and performance of a distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate. The diode-pumped continuous-wave laser demonstrated a threshold of 2.2 mW absorbed pump power and a maximum output power of more than 3 mW with a slope efficiency of 41.3% versus absorbed pump power. Single-longitudinal-mode and single-polarization operation was achieved with an emission linewidth of 1.70+/-0.58 kHz (corresponding to a Q factor of 1.14 x 10(11)), which was centered at a wavelength of 1545.2 nm.
authors.affiliation: Integrated Optical MicroSystems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. E.H.Bernhardi@ewi.utwente.nl
authors.forename: E H
authors.initials: EH
authors.lastname: Bernhardi
authors.forename: H A G M
authors.initials: HA
authors.lastname: van Wolferen
authors.forename: L
authors.initials: L
authors.lastname: Agazzi
authors.forename: M R H
authors.initials: MR
authors.lastname: Khan
authors.forename: C G H
authors.initials: CG
authors.lastname: Roeloffzen
authors.forename: K
authors.initials: K
authors.lastname: Wörhoff
authors.forename: M
authors.initials: M
authors.lastname: Pollnau
authors.forename: R M
authors.initials: RM
authors.lastname: de Ridder