title: Fullerene-derivative-embedded nanogap field-effect-transistor and its nonvolatile memory application.
authors.affiliation: Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Korea.
authors.forename: Seong-Wan
authors.initials: SW
authors.lastname: Ryu
authors.forename: Chung-Jin
authors.initials: CJ
authors.lastname: Kim
authors.forename: Sungho
authors.initials: S
authors.lastname: Kim
authors.forename: Myungsoo
authors.initials: M
authors.lastname: Seo
authors.forename: Changhun
authors.initials: C
authors.lastname: Yun
authors.forename: Seunghyup
authors.initials: S
authors.lastname: Yoo
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
mesh_terms: D037741:Fullerenes / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D036103:Nanotechnology; D014173:Transistors, Electronic
chemical_list: D037741:Fullerenes