title: Integrated Al2O3:Er3+ ring lasers on silicon with wide wavelength selectivity.
abstract: Integrated Al(2)O(3):Er(3+) channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling into and low laser output power coupling from the ring is achieved in a straightforward design. Output powers of up to 9.5 microW and slope efficiencies of up to 0.11% were measured while lasing was observed for a threshold diode-pump power as low as 6.4 mW for ring lasers with cavity lengths varying from 2.0 to 5.5 cm. Wavelength selection in the range 1530-1557 nm was demonstrated by varying the length of the output coupler from the ring.
authors.affiliation: Integrated Optical Microsystems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. j.d.b.bradley@ewi.utwente.nl
authors.forename: J D
authors.initials: JD
authors.lastname: Bradley
authors.forename: R
authors.initials: R
authors.lastname: Stoffer
authors.forename: L
authors.initials: L
authors.lastname: Agazzi
authors.forename: F
authors.initials: F
authors.lastname: Ay
authors.forename: K
authors.initials: K
authors.lastname: Wörhoff
authors.forename: M
authors.initials: M
authors.lastname: Pollnau