title: Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit.
authors.affiliation: Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing, P R China.
authors.forename: Yao-Yi
authors.initials: YY
authors.lastname: Li
authors.forename: Guang
authors.initials: G
authors.lastname: Wang
authors.forename: Xie-Gang
authors.initials: XG
authors.lastname: Zhu
authors.forename: Min-Hao
authors.initials: MH
authors.lastname: Liu
authors.forename: Cun
authors.initials: C
authors.lastname: Ye
authors.forename: Xi
authors.initials: X
authors.lastname: Chen
authors.forename: Ya-Yu
authors.initials: YY
authors.lastname: Wang
authors.forename: Ke
authors.initials: K
authors.lastname: He
authors.forename: Li-Li
authors.initials: LL
authors.lastname: Wang
authors.forename: Xu-Cun
authors.initials: XC
authors.lastname: Ma
authors.forename: Hai-Jun
authors.initials: HJ
authors.lastname: Zhang
authors.forename: Xi
authors.initials: X
authors.lastname: Dai
authors.forename: Zhong
authors.initials: Z
authors.lastname: Fang
authors.forename: Xin-Cheng
authors.initials: XC
authors.lastname: Xie
authors.forename: Ying
authors.initials: Y
authors.lastname: Liu
authors.forename: Xiao-Liang
authors.initials: XL
authors.lastname: Qi
authors.forename: Jin-Feng
authors.initials: JF
authors.lastname: Jia
authors.forename: Shou-Cheng
authors.initials: SC
authors.lastname: Zhang
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Xue
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013691:Tellurium / Q000737:chemistry*
chemical_list: C542787:bismuth telluride; D013691:Tellurium; D001729:Bismuth; D012825:Silicon