title: Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2 V-1 s-1.
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Blackett Laboratory Imperial College London, London, SW7 2AZ, UK.
authors.forename: Jeremy
authors.initials: J
authors.lastname: Smith
authors.forename: Aneeqa
authors.initials: A
authors.lastname: Bashir
authors.forename: George
authors.initials: G
authors.lastname: Adamopoulos
authors.forename: John E
authors.initials: JE
authors.lastname: Anthony
authors.forename: Donal D C
authors.initials: DD
authors.lastname: Bradley
authors.forename: Martin
authors.initials: M
authors.lastname: Heeney
authors.forename: Iain
authors.initials: I
authors.lastname: McCulloch
authors.forename: Thomas D
authors.initials: TD
authors.lastname: Anthopoulos
mesh_terms: D000388:Air; D004867:Equipment Design; D044367:Phase Transition; D011108:Polymers / Q000737:chemistry*; D012996:Solutions / Q000737:chemistry; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D011108:Polymers; D012996:Solutions; D015034:Zinc Oxide