title: Nanotrench for nano and microparticle electrical interconnects.
abstract: We present a simple and versatile patterning procedure for the reliable and reproducible fabrication of high aspect ratio (10(4)) electrical interconnects that have separation distances down to 20 nm and lengths of several hundreds of microns. The process uses standard optical lithography techniques and allows parallel processing of many junctions, making it easily scalable and industrially relevant. We demonstrate the suitability of these nanotrenches as electrical interconnects for addressing micro and nanoparticles by realizing several circuits with integrated species. Furthermore, low impedance metal-metal low contacts are shown to be obtained when trapping a single metal-coated microsphere in the gap, emphasizing the intrinsic good electrical conductivity of the interconnects, even though a wet process is used. Highly resistive magnetite-based nanoparticles networks also demonstrate the advantage of the high aspect ratio of the nanotrenches for providing access to electrical properties of highly resistive materials, with leakage current levels below 1 pA.
authors.affiliation: IPCMS-Department of Magnetic Objects on the Nanoscale, 23 rue du Loess BP 43, F-67034, Strasbourg Cedex 2, France. jean-francois.dayen@ipcms.u-strasbg.fr
authors.forename: J-F
authors.initials: JF
authors.lastname: Dayen
authors.forename: V
authors.initials: V
authors.lastname: Faramarzi
authors.forename: M
authors.initials: M
authors.lastname: Pauly
authors.forename: N T
authors.initials: NT
authors.lastname: Kemp
authors.forename: M
authors.initials: M
authors.lastname: Barbero
authors.forename: B P
authors.initials: BP
authors.lastname: Pichon
authors.forename: H
authors.initials: H
authors.lastname: Majjad
authors.forename: S
authors.initials: S
authors.lastname: Begin-Colin
authors.forename: B
authors.initials: B
authors.lastname: Doudin