title: A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping.
abstract: We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany. kanungo@mpi-halle.de.
authors.forename: Pratyushdas
authors.initials: P
authors.lastname: Kanungo
authors.forename: Reinhard
authors.initials: R
authors.lastname: Kögler
authors.forename: Peter
authors.initials: P
authors.lastname: Werner
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa