title: Highly end-doped silicon nanowires for field-effect transistors on flexible substrates.
abstract: We report on the VLS (vapour-liquid-solid) fabrication and characterization of in situ axially doped silicon nanowires (SiNWs) at both ends, and on their integration into a bottom gate-top contact geometry on both rigid and flexible substrates to realize field-effect transistors (FETs). To improve contact resistance between SiNWs and source/drain electrodes, we axially tuned the level of doping at both ends of the SiNWs by sequential in situ addition of PH(3). Characterisation of SiNWs by scanning spreading resistance microscopy in the device configuration allowed us to determine precisely the different sections of the SiNWs. The transfer to flexible substrates still allowed for workable FET structures. Transistors with electron mobilities exceeding 120 cm(2) V(-1) s(-1), I(on)/I(off) ratios greater than 10(7) and ambipolar behaviour were achieved.
authors.affiliation: CEA-Grenoble, LITEN/DTNM/LCRE, 17, rue des Martyrs, 38054, Grenoble Cedex 9, France. caroline.celle@cea.fr
authors.forename: Caroline
authors.initials: C
authors.lastname: Celle
authors.forename: Alexandre
authors.initials: A
authors.lastname: Carella
authors.forename: Denis
authors.initials: D
authors.lastname: Mariolle
authors.forename: Nicolas
authors.initials: N
authors.lastname: Chevalier
authors.forename: Emmanuelle
authors.initials: E
authors.lastname: Rouvière
authors.forename: Jean-Pierre
authors.initials: JP
authors.lastname: Simonato
mesh_terms: D004566:Electrodes; D053770:Nanowires / Q000737:chemistry*; D009532:Nickel / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D009532:Nickel; D014025:Titanium; D012825:Silicon