High-power vertical-cavity surface-emitting laser with an optimized p-contact diameter.
A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600 microm diameter VCSEL is suppressed from 30 degrees to 15 degrees, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2.01 W.
Zhang
Yan
Y
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, 3888 Southeast Lake Road, Changchun 130033, China.
Ning
Yongqiang
Y
Qin
Li
L
Wang
Ye
Y
Cui
Jinjiang
J
Liu
Guangyu
G
Zhang
Xing
X
Wang
Zhenfu
Z
Sun
Yanfang
Y
Liu
Yun
Y
Wang
Lijun
L
D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D007909:Lenses; D012031:Refractometry / Q000295:instrumentation*