title: Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.
abstract: Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.
authors.affiliation: Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstrasse 11, 20355 Hamburg, Germany.
authors.forename: Ch
authors.initials: C
authors.lastname: Heyn
authors.forename: A
authors.initials: A
authors.lastname: Stemmann
authors.forename: T
authors.initials: T
authors.lastname: Köppen
authors.forename: Ch
authors.initials: C
authors.lastname: Strelow
authors.forename: T
authors.initials: T
authors.lastname: Kipp
authors.forename: M
authors.initials: M
authors.lastname: Grave
authors.forename: S
authors.initials: S
authors.lastname: Mendach
authors.forename: W
authors.initials: W
authors.lastname: Hansen