Hysteresis reversion in graphene field-effect transistors.
To enhance performances of graphene/SiO(2) based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO(2) interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO(2) interface.
Liao
Zhi-Min
ZM
Department of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China. liaozm@pku.edu.cn
Han
Bing-Hong
BH
Zhou
Yang-Bo
YB
Yu
Da-Peng
DP