Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
Liu
Jm
J
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, 100083, Beijing, People's Republic of China. liujianming@semi.ac.cn.
Liu
Xl
X
Xu
Xq
X
Wang
J
J
Li
Cm
C
Wei
Hy
H
Yang
Sy
S
Zhu
Qs
Q
Fan
Ym
Y
Zhang
Xw
X
Wang
Zg
Z