title: Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
abstract: We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.
authors.affiliation: Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St,-Petersburg, Russia. cirlin@beam.ioffe.ru.
authors.forename: Ge
authors.initials: G
authors.lastname: Cirlin
authors.forename: Ad
authors.initials: A
authors.lastname: Bouravleuv
authors.forename: Ip
authors.initials: I
authors.lastname: Soshnikov
authors.forename: Yu B
authors.initials: YB
authors.lastname: Samsonenko
authors.forename: Vg
authors.initials: V
authors.lastname: Dubrovskii
authors.forename: Em
authors.initials: E
authors.lastname: Arakcheeva
authors.forename: Em
authors.initials: E
authors.lastname: Tanklevskaya
authors.forename: P
authors.initials: P
authors.lastname: Werner