Double-gate nanowire field effect transistor for a biosensor.
A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.
Ahn
Jae-Hyuk
JH
Department of Electrical Engineering, Center for Systems and Synthetic Biotechnology, and Institute for the BioCentury, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Choi
Sung-Jin
SJ
Han
Jin-Woo
JW
Park
Tae Jung
TJ
Lee
Sang Yup
SY
Choi
Yang-Kyu
YK
D015374:Biosensing Techniques; D053770:Nanowires