Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.
Cirlin
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Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St,-Petersburg, Russia. cirlin@beam.ioffe.ru.
Bouravleuv
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Soshnikov
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Samsonenko
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Dubrovskii
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Arakcheeva
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Tanklevskaya
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Werner
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