Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene.
Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise ratios of unsuspended graphene devices. Here we present the four-probe low-frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.
Xu
Guangyu
G
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
Torres
Carlos M
CM
Zhang
Yuegang
Y
Liu
Fei
F
Song
Emil B
EB
Wang
Minsheng
M
Zhou
Yi
Y
Zeng
Caifu
C
Wang
Kang L
KL