Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.
Heyn
Ch
C
Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstrasse 11, 20355 Hamburg, Germany.
Stemmann
A
A
Köppen
T
T
Strelow
Ch
C
Kipp
T
T
Grave
M
M
Mendach
S
S
Hansen
W
W