title: Double-gate nanowire field effect transistor for a biosensor.
abstract: A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.
authors.affiliation: Department of Electrical Engineering, Center for Systems and Synthetic Biotechnology, and Institute for the BioCentury, Yuseong-gu, Daejeon 305-701, Republic of Korea.
authors.forename: Jae-Hyuk
authors.initials: JH
authors.lastname: Ahn
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Choi
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Han
authors.forename: Tae Jung
authors.initials: TJ
authors.lastname: Park
authors.forename: Sang Yup
authors.initials: SY
authors.lastname: Lee
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
mesh_terms: D015374:Biosensing Techniques; D053770:Nanowires