title: Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
abstract: X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P, O, Box 912, 100083, Beijing, People's Republic of China. liujianming@semi.ac.cn.
authors.forename: Jm
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authors.lastname: Liu
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authors.lastname: Liu
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authors.lastname: Xu
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authors.lastname: Wang
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authors.lastname: Li
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authors.lastname: Wei
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authors.lastname: Yang
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authors.lastname: Zhu
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authors.lastname: Fan
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authors.lastname: Zhang
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authors.lastname: Wang