title: Platinum nanoflowers on scratched silicon by galvanic displacement for an effective SALDI substrate.
abstract: We report a new and facile method for synthesizing 3D platinum nanoflowers (Pt Nfs) on a scratched silicon substrate by electroless galvanic displacement and discuss the applications of the Pt Nfs in surface-assisted laser desorption/ionization-mass spectrometry (SALDI-MS). Surface scratching of n-type silicon is essential to induce Pt Nf growth on a silicon substrate (to obtain a Pt Nf silicon hybrid plate) by the galvanic displacement reaction. The Pt Nf silicon hybrid plate showed excellent SALDI activity in terms of the efficient generation of protonated molecular ions in the absence of a citrate buffer. We propose that the acidity of the Si-OH moieties on silicon increases because of the electron-withdrawing nature of the Pt Nfs; hence, proton transfer from the Si-OH groups to the analyte molecules is enhanced, and finally, thermal desorption of the analyte ions from the surface occurs. Signal enhancement was observed for protonated molecular ions produced from a titania nanotube array (TNA) substrate on which Pt nanoparticles had been photochemically deposited. Moreover, surface modification of the Pt Nf silicon hybrid plate by perfluorodecyltrichlorosilane (FDTS) (to obtain an FDTS-Pt Nf silicon hybrid plate) was found to facilitate soft SALDI of labile compounds. More interestingly, the FDTS-Pt Nf silicon hybrid plate acts 1) as a high-affinity substrate for phosphopeptides and 2) as a SALDI substrate. The feasibility of using the FDTS-Pt Nf silicon hybrid plate for SALDI-MS has been demonstrated by using a β-casein digest and various analytes, including small molecules, peptides, phosphopeptides, phospholipids, carbohydrates, and synthetic polymers. The hybridization of Pt Nfs with a scratched silicon substrate has been found to be important for achieving excellent SALDI activity.
authors.affiliation: Department of Chemistry and Materials Engineering, Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita-shi, Osaka, 564-8680 Japan. hkawa@kansai-u.ac.jp
authors.forename: Hideya
authors.initials: H
authors.lastname: Kawasaki
authors.forename: Teruyuki
authors.initials: T
authors.lastname: Yao
authors.forename: Takashi
authors.initials: T
authors.lastname: Suganuma
authors.forename: Kouji
authors.initials: K
authors.lastname: Okumura
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Iwaki
authors.forename: Tetsu
authors.initials: T
authors.lastname: Yonezawa
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Kikuchi
authors.forename: Ryuichi
authors.initials: R
authors.lastname: Arakawa