title: Hysteresis reversion in graphene field-effect transistors.
abstract: To enhance performances of graphene/SiO(2) based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO(2) interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO(2) interface.
authors.affiliation: Department of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China. liaozm@pku.edu.cn
authors.forename: Zhi-Min
authors.initials: ZM
authors.lastname: Liao
authors.forename: Bing-Hong
authors.initials: BH
authors.lastname: Han
authors.forename: Yang-Bo
authors.initials: YB
authors.lastname: Zhou
authors.forename: Da-Peng
authors.initials: DP
authors.lastname: Yu