title: Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene.
abstract: Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise ratios of unsuspended graphene devices. Here we present the four-probe low-frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Guangyu
authors.initials: G
authors.lastname: Xu
authors.forename: Carlos M
authors.initials: CM
authors.lastname: Torres
authors.forename: Yuegang
authors.initials: Y
authors.lastname: Zhang
authors.forename: Fei
authors.initials: F
authors.lastname: Liu
authors.forename: Emil B
authors.initials: EB
authors.lastname: Song
authors.forename: Minsheng
authors.initials: M
authors.lastname: Wang
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhou
authors.forename: Caifu
authors.initials: C
authors.lastname: Zeng
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang