Additive nanoscale embedding of functional nanoparticles on silicon surface.
We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO(2) layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe(2)O(4) nanoparticles patterned in lines, grids and logic structures.
Cavallini
Massimiliano
M
CNR-ISMN, Via P Gobetti 101, I-40129, Bologna, Italy. m.cavallini@bo.ismn.cnr.it
Simeone
Felice C
FC
Borgatti
Francesco
F
Albonetti
Cristiano
C
Morandi
Vittorio
V
Sangregorio
Claudio
C
Innocenti
Claudia
C
Pineider
Francesco
F
Annese
Emilia
E
Panaccione
Giancarlo
G
Pasquali
Luca
L
D002384:Catalysis; D003035:Cobalt / Q000737:chemistry; D004553:Electric Conductivity; D004581:Electronics; D005290:Ferric Compounds / Q000737:chemistry; D008422:Materials Testing; D018625:Microscopy, Atomic Force / Q000379:methods; D053758:Nanoparticles / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*
D005290:Ferric Compounds; C000499:ferric oxide; D003035:Cobalt; D012822:Silicon Dioxide; D012825:Silicon