Pr:YAlO(3) microchip laser.
A cw Pr:YAlO(3) microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO(3) crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1W of output power at approximately 448 nm was used. 139mW of laser radiation at 747nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was approximately 25%.
Fibrich
Martin
M
Czech Technical University in Prague, Faculty of Nuclear Sciences. martin.fibrich@fjfi.cvut.cz
Jelínková
Helena
H
Sulc
Jan
J
Nejezchleb
Karel
K
Skoda
Václav
V