title: Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.
abstract: Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.
authors.affiliation: Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA. ymazur@uark.edu.
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
authors.forename: Yanze Z
authors.initials: YZ
authors.lastname: Xie
authors.forename: Vasyl P
authors.initials: VP
authors.lastname: Kunets
authors.forename: Vitaliy G
authors.initials: VG
authors.lastname: Dorogan
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo