title: Wafer-scale high-throughput ordered growth of vertically aligned ZnO nanowire arrays.
abstract: This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
authors.forename: Yaguang
authors.initials: Y
authors.lastname: Wei
authors.forename: Wenzhuo
authors.initials: W
authors.lastname: Wu
authors.forename: Rui
authors.initials: R
authors.lastname: Guo
authors.forename: Dajun
authors.initials: D
authors.lastname: Yuan
authors.forename: Suman
authors.initials: S
authors.lastname: Das
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang