title: Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition.
abstract: We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition (ALD) facilitates the fabrication of lateral type nanochannels smaller than the e-beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO(2), TiO(2)/TiN, and Al(2)O(3)/Ru, we have fabricated lateral sub-10-nm nanochannels with good control over channel diameter. Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-around-gating IFETs, an important functional element in an electrofluidic-based circuit system.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Nam
authors.forename: Min-Hyun
authors.initials: MH
authors.lastname: Lee
authors.forename: Seung-Hyun
authors.initials: SH
authors.lastname: Lee
authors.forename: Do-Joong
authors.initials: DJ
authors.lastname: Lee
authors.forename: S M
authors.initials: SM
authors.lastname: Rossnagel
authors.forename: Ki-Bum
authors.initials: KB
authors.lastname: Kim