Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition.
We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition (ALD) facilitates the fabrication of lateral type nanochannels smaller than the e-beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO(2), TiO(2)/TiN, and Al(2)O(3)/Ru, we have fabricated lateral sub-10-nm nanochannels with good control over channel diameter. Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-around-gating IFETs, an important functional element in an electrofluidic-based circuit system.
Nam
Sung-Wook
SW
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
Lee
Min-Hyun
MH
Lee
Seung-Hyun
SH
Lee
Do-Joong
DJ
Rossnagel
S M
SM
Kim
Ki-Bum
KB