title: An anisotropic etching effect in the graphene basal plane.
authors.affiliation: Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Science, Beijing 100190, PR China.
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.forename: Lianchang
authors.initials: L
authors.lastname: Zhang
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Shi
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.forename: Hongjun
authors.initials: H
authors.lastname: Gao
authors.forename: Enge
authors.initials: E
authors.lastname: Wang
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang
mesh_terms: D016880:Anisotropy; D006108:Graphite / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D058626:Plasma Gases / Q000737:chemistry; D011327:Printing / Q000379:methods*; D012666:Semiconductors
chemical_list: D058626:Plasma Gases; D006108:Graphite