title: Pr:YAlO(3) microchip laser.
abstract: A cw Pr:YAlO(3) microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO(3) crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1W of output power at approximately 448 nm was used. 139mW of laser radiation at 747nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was approximately 25%.
authors.affiliation: Czech Technical University in Prague, Faculty of Nuclear Sciences. martin.fibrich@fjfi.cvut.cz
authors.forename: Martin
authors.initials: M
authors.lastname: Fibrich
authors.forename: Helena
authors.initials: H
authors.lastname: Jelínková
authors.forename: Jan
authors.initials: J
authors.lastname: Sulc
authors.forename: Karel
authors.initials: K
authors.lastname: Nejezchleb
authors.forename: Václav
authors.initials: V
authors.lastname: Skoda