Geometry-dependent terahertz emission of silicon nanowires.
THz emission was observed from the vertically aligned silicon nanowire (Si NW) arrays, upon the excitation using a fs Ti-sapphire laser pulse (800 nm). The Si NWs (length = 0.3 approximately 9 microm) were synthesized by the chemical etching of n-type silicon substrates. The THz emission exhibits significant length dependence; the intensity increases sharply up to a length of 3 mum and then almost saturates. Their efficient THz emission is attributed to strong local field enhancement by coherent surface plasmons, with distinctive geometry dependence.
Jung
Gyeong Bok
GB
Department of Chemistry, Korea University, Jochiwon 339-700, Korea.
Cho
Yong Jae
YJ
Myung
Yoon
Y
Kim
Han Sung
HS
Seo
Young Suk
YS
Park
Jeunghee
J
Kang
Chul
C
D003460:Crystallization; D008422:Materials Testing / Q000379:methods*; D036103:Nanotechnology / Q000295:instrumentation*; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D012825:Silicon