title: Electrical transport and high-performance photoconductivity in individual ZrS(2) nanobelts.
abstract: Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.
authors: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan. LI.Liang@nims.go.jp
authors: Liang
authors: L
authors: Li
authors: Xiaosheng
authors: X
authors: Fang
authors: Tianyou
authors: T
authors: Zhai
authors: Meiyong
authors: M
authors: Liao
authors: Ujjal K
authors: UK
authors: Gautam
authors: Xingcai
authors: X
authors: Wu
authors: Yasuo
authors: Y
authors: Koide
authors: Yoshio
authors: Y
authors: Bando
authors: Dmitri
authors: D
authors: Golberg
mesh_terms: D004553:Electric Conductivity; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D013696:Temperature; D014173:Transistors, Electronic; D015040:Zirconium / Q000737:chemistry*
chemical_list: D015040:Zirconium