title: Signal-to-noise performance of a short-wave infrared nanoinjection imager.
abstract: We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75 degrees C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e(-)) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
authors: Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA.
authors: Omer Gokalp
authors: OG
authors: Memis
authors: John
authors: J
authors: Kohoutek
authors: Wei
authors: W
authors: Wu
authors: Ryan M
authors: RM
authors: Gelfand
authors: Hooman
authors: H
authors: Mohseni