title: On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide.
abstract: On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
authors: Corporate Research & Development Center, Toshiba Corporation,1 Kimukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan. kazuya.ohira@toshiba.co.jp
authors: Kazuya
authors: K
authors: Ohira
authors: Kentaro
authors: K
authors: Kobayashi
authors: Norio
authors: N
authors: Iizuka
authors: Haruhiko
authors: H
authors: Yoshida
authors: Mizunori
authors: M
authors: Ezaki
authors: Hiroshi
authors: H
authors: Uemura
authors: Akihiro
authors: A
authors: Kojima
authors: Kenro
authors: K
authors: Nakamura
authors: Hideto
authors: H
authors: Furuyama
authors: Hideki
authors: H
authors: Shibata