title: Thickness and refractive index measurement of a silicon wafer based on an optical comb.
abstract: We have proposed and demonstrated a novel method that can determine both the geometrical thickness and refractive index of a silicon wafer at the same time using an optical comb. The geometrical thickness and refractive index of a silicon wafer was determined from the optical thickness using phase information obtained in the spectral domain. In a feasibility test, the geometrical thickness and refractive index of a wafer were measured to be 334.85 microm and 3.50, respectively. The measurement uncertainty for the geometrical thickness was evaluated as 0.95 microm (k = 1) using a preliminary setup.
authors: Center for Length and Time, Division of Physical Metrology, Korea Research Institute of Standards and Science (KRISS), Science Town, Daejeon, 305-340, Republic of Korea. jonghan@kriss.re.kr
authors: Jonghan
authors: J
authors: Jin
authors: Jae Wan
authors: JW
authors: Kim
authors: Chu-Shik
authors: CS
authors: Kang
authors: Jong-Ahn
authors: JA
authors: Kim
authors: Tae Bong
authors: TB
authors: Eom
mesh_terms: D007259:Infrared Rays; D007368:Interferometry / Q000295:instrumentation* / Q000379:methods; D007834:Lasers; D008962:Models, Theoretical; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation* / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D013053:Spectrophotometry / Q000295:instrumentation* / Q000379:methods
chemical_list: D012825:Silicon