Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode.
Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 x 10(5) in its rectification ratio.
Lee
Tae Il
TI
Department of Materials Science and Engineering, Yonsei University, Seoul, Korea.
Choi
Won Jin
WJ
Kar
Jyoti Prakash
JP
Kang
Youn Hee
YH
Jeon
Joo Hee
JH
Park
Jee Ho
JH
Kim
Youn Sang
YS
Baik
Hong Koo
HK
Myoung
Jae Min
JM