Signal-to-noise performance of a short-wave infrared nanoinjection imager.
We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75 degrees C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e(-)) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
Memis
Omer Gokalp
OG
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA.
Kohoutek
John
J
Wu
Wei
W
Gelfand
Ryan M
RM
Mohseni
Hooman
H