title: Photoresponse of ion-damaged germanium.
abstract: Ion implantation was used to create predetermined defect densities to examine photoresponse for optoelectronic switch applications. Ion-damaged germanium shows a significant decrease in photoresponsivity with implant dose, particularly with doses exceeding the critical amorphizing dose (D(c) approximately 1 x 10(14) cm(-2)).
authors: S D
authors: SD
authors: Russell