title: Three-dimensional carrier profiling of individual Si nanowires by scanning spreading resistance microscopy.
authors: Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany. X.ou@fzd.de
authors: Xin
authors: X
authors: Ou
authors: Pratyush Das
authors: PD
authors: Kanungo
authors: Reinhard
authors: R
authors: Kögler
authors: Peter
authors: P
authors: Werner
authors: Ulrich
authors: U
authors: Gösele
authors: Wolfgang
authors: W
authors: Skorupa
authors: Xi
authors: X
authors: Wang
mesh_terms: D017097:Electric Impedance; D008855:Microscopy, Electron, Scanning / Q000379:methods*; D008958:Models, Molecular; D008968:Molecular Conformation; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon