Electrical transport and high-performance photoconductivity in individual ZrS(2) nanobelts.
Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.
Li
Liang
L
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan. LI.Liang@nims.go.jp
Fang
Xiaosheng
X
Zhai
Tianyou
T
Liao
Meiyong
M
Gautam
Ujjal K
UK
Wu
Xingcai
X
Koide
Yasuo
Y
Bando
Yoshio
Y
Golberg
Dmitri
D
D004553:Electric Conductivity; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D013696:Temperature; D014173:Transistors, Electronic; D015040:Zirconium / Q000737:chemistry*
D015040:Zirconium