All-silicon and in-line integration of variable optical attenuators and photodetectors based on submicrometer rib waveguides.
We demonstrate a monolithic integration of variable optical attenuators (VOAs) and photodetectors (PDs) based on submicrometer silicon (Si) rib waveguide with p-i-n diode structure for near infrared (NIR) light. To make the Si PD absorptive for NIR, we introduced lattice defects at the rib core by means of argon ion implantation. At reverse bias of 5 V, the PD exhibits dark current of approximately 1 nA, responsivity of approximately 65 mA/W at 1560-nm wavelength, and a 3-dB cut-off frequency of approximately 350 MHz, while the VOA shows approximately 100 MHz. The PD has an absorption coefficient as low as approximately 0.5 cm(-1), which is favorable for an in in-line PD configuration, where the PD absorbs a small portion of the optical power. For DC light, the PD precisely detects the optical power attenuated by the VOA with a detection range of over 40 dB. The 3-dB cut-off frequency of synchronous operation between the VOA and PD is approximately 50 MHz, which is limited by RF noise originating from the VOA drive current. Putting an isolation groove between the VOA and PD is effective for avoiding performance degradation in DC and RF operation.
Park
Sungbong
S
NTT Microsystem Integration Laboratories, NTT Corporation,3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan. psbong@aecl.ntt.co.jp
Yamada
Koji
K
Tsuchizawa
Tai
T
Watanabe
Toshifumi
T
Nishi
Hidetaka
H
Shinojima
Hiroyuki
H
Itabashi
Sei-ichi
S