Fiber field-effect device via in situ channel crystallization.
The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.
Danto
Sylvain
S
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, 02139, USA.
Sorin
Fabien
F
Orf
Nicholas D
ND
Wang
Zheng
Z
Speakman
Scott A
SA
Joannopoulos
John D
JD
Fink
Yoel
Y
D018011:Chalcogens / Q000737:chemistry; D003460:Crystallization; D004566:Electrodes; D007700:Kinetics; D008670:Metals / Q000737:chemistry; D012666:Semiconductors / Q000295:instrumentation*
D018011:Chalcogens; D008670:Metals