title: Geometry-dependent terahertz emission of silicon nanowires.
abstract: THz emission was observed from the vertically aligned silicon nanowire (Si NW) arrays, upon the excitation using a fs Ti-sapphire laser pulse (800 nm). The Si NWs (length = 0.3 approximately 9 microm) were synthesized by the chemical etching of n-type silicon substrates. The THz emission exhibits significant length dependence; the intensity increases sharply up to a length of 3 mum and then almost saturates. Their efficient THz emission is attributed to strong local field enhancement by coherent surface plasmons, with distinctive geometry dependence.
authors: Department of Chemistry, Korea University, Jochiwon 339-700, Korea.
authors: Gyeong Bok
authors: GB
authors: Jung
authors: Yong Jae
authors: YJ
authors: Cho
authors: Yoon
authors: Y
authors: Myung
authors: Han Sung
authors: HS
authors: Kim
authors: Young Suk
authors: YS
authors: Seo
authors: Jeunghee
authors: J
authors: Park
authors: Chul
authors: C
authors: Kang
mesh_terms: D003460:Crystallization; D008422:Materials Testing / Q000379:methods*; D036103:Nanotechnology / Q000295:instrumentation*; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012825:Silicon