title: Diode-pumped gigahertz femtosecond Yb:KGW laser with a peak power of 3.9 kW.
abstract: We present a diode-pumped Yb:KGW laser with a repetition rate of 1 GHz and a pulse duration of 281 fs at a wavelength of 1041 nm. A high brightness distributed Bragg reflector tapered diode laser is used as a pump source. Stable soliton modelocking is achieved with a semiconductor saturable absorber mirror (SESAM). The obtained average output power is 1.1 W and corresponds to a peak power of 3.9 kW and a pulse energy of 1.1 nJ. With harmonic modelocking we could increase the pulse repetition rate up to 4 GHz with an average power of 900 mW and a pulse duration of 290 fs. This Yb:KGW laser has a high potential for stable frequency comb generation.
authors: Department of Physics, Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland. spekarek@phys.ethz.ch
authors: Selina
authors: S
authors: Pekarek
authors: Christian
authors: C
authors: Fiebig
authors: Max Christoph
authors: MC
authors: Stumpf
authors: Andreas Ernst Heinz
authors: AE
authors: Oehler
authors: Katrin
authors: K
authors: Paschke
authors: Götz
authors: G
authors: Erbert
authors: Thomas
authors: T
authors: Südmeyer
authors: Ursula
authors: U
authors: Keller
mesh_terms: D003198:Computer Simulation; D004867:Equipment Design; D006358:Hot Temperature; D054023:Lasers, Semiconductor; D008962:Models, Theoretical; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*