title: AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films.
abstract: AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density ρs of 0.10 μm(-1) and a fracture energy Γ of 49.6 J m(-2). On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and ρs.
authors: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
authors: Hong Rak
authors: HR
authors: Choi
authors: Bhaskar Chandra
authors: BC
authors: Mohanty
authors: Jong Seong
authors: JS
authors: Kim
authors: Yong Soo
authors: YS
authors: Cho
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D055119:Elastic Modulus; D008422:Materials Testing; D008567:Membranes, Artificial; D013718:Tensile Strength; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D017607:Aluminum Compounds; D008567:Membranes, Artificial; C052045:aluminum nitride; D015034:Zinc Oxide