title: Ultra-low voltage, ultra-small mode volume silicon microring modulator.
abstract: We show GHz modulation in a 2.5 microm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 microm(3). The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.
authors: School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA.
authors: Sasikanth
authors: S
authors: Manipatruni
authors: Kyle
authors: K
authors: Preston
authors: Long
authors: L
authors: Chen
authors: Michal
authors: M
authors: Lipson
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon