Three-dimensional carrier profiling of individual Si nanowires by scanning spreading resistance microscopy.
Ou
Xin
X
Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany. X.ou@fzd.de
Kanungo
Pratyush Das
PD
Kögler
Reinhard
R
Werner
Peter
P
Gösele
Ulrich
U
Skorupa
Wolfgang
W
Wang
Xi
X
D017097:Electric Impedance; D008855:Microscopy, Electron, Scanning / Q000379:methods*; D008958:Models, Molecular; D008968:Molecular Conformation; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
D012825:Silicon