title: Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE).
abstract: A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).
authors: AFRL/RXPS, Wright - Patterson Air Force Base, Ohio 45433, USA. Jeongho.Park@WPAFB.AF.MIL
authors: Jeongho
authors: J
authors: Park
authors: William C
authors: WC
authors: Mitchel
authors: Lawrence
authors: L
authors: Grazulis
authors: Howard E
authors: HE
authors: Smith
authors: Kurt G
authors: KG
authors: Eyink
authors: John J
authors: JJ
authors: Boeckl
authors: David H
authors: DH
authors: Tomich
authors: Shanee D
authors: SD
authors: Pacley
authors: John E
authors: JE
authors: Hoelscher
mesh_terms: D002244:Carbon / Q000737:chemistry*; D037741:Fullerenes / Q000737:chemistry; D018625:Microscopy, Atomic Force; D056951:Photoelectron Spectroscopy; D013059:Spectrum Analysis, Raman
chemical_list: D037741:Fullerenes; D002244:Carbon; C069837:fullerene C60