title: Silicon nitride gate dielectrics and band gap engineering in graphene layers.
abstract: We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.
authors: IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598, USA. wenjuan@us.ibm.com
authors: Wenjuan
authors: W
authors: Zhu
authors: Deborah
authors: D
authors: Neumayer
authors: Vasili
authors: V
authors: Perebeinos
authors: Phaedon
authors: P
authors: Avouris