title: New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features.
abstract: We describe a new patterning technique, named "secondary sputtering lithography" that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.
authors: National Research Laboratory for Organic Opto-Electronic Materials, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
authors: Hwan-Jin
authors: HJ
authors: Jeon
authors: Kyoung Hwan
authors: KH
authors: Kim
authors: Youn-Kyoung
authors: YK
authors: Baek
authors: Dae Woo
authors: DW
authors: Kim
authors: Hee-Tae
authors: HT
authors: Jung