Ultralarge-area block copolymer lithography enabled by disposable photoresist prepatterning.
We accomplished truly scalable, low cost, arbitrarily large-area block copolymer lithography, synergistically integrating the two principles of graphoepitaxy and epitaxial self-assembly. Graphoepitaxy morphology composed of highly aligned lamellar block copolymer film that self-assembled within a disposable photoresist trench pattern was prepared by conventional I-line lithography and utilized as a chemical nanopatterning mask for the underlying substrate. After the block copolymer film and disposable photoresist layer were removed, the same lamellar block copolymer film was epitaxially assembled on the exposed chemically patterned substrate. Highly oriented lamellar morphology was attained without any trace of structure directing the photoresist pattern over an arbitrarily large area.
Jeong
Seong-Jun
SJ
Department of Materials Science and Engineering, KI for the Nanocentury, KAIST, Daejeon 305-701, Republic of Korea.
Moon
Hyoung-Seok
HS
Kim
Bong Hoon
BH
Kim
Ju Young
JY
Yu
Jaeho
J
Lee
Sumi
S
Lee
Moon Gyu
MG
Choi
Hwanyoung
H
Kim
Sang Ouk
SO