title: 40-GHz bandwidth InGaAs/InAlAs multiple quantum well optical intensity modulator.
abstract: High-speed waveguide InGaAs/InAIAs multiple quantum well (MQW) optical intensity modulators are demonstrated. To minimize the modulator capacitance, an undoped InAIAs cladding layer is added over the MQW core layer in the optical waveguide. In addition, polyimide is spin coated under the bonding pad. As a result, a very wide bandwidth in excess of 40 GHz is developed with a driving voltage of 6 V for a 10-dB extinction ratio and a linewidth broadening factor alpha of < 1.0 at an operating wavelength of 1.54 microm. The frequency response of the modulator is limited by the device capacitance and inductance.
authors: O
authors: O
authors: Mitomi
authors: I
authors: I
authors: Kotaka
authors: K
authors: K
authors: Wakita
authors: S
authors: S
authors: Nojima
authors: K
authors: K
authors: Kawano
authors: Y
authors: Y
authors: Kawamura
authors: H
authors: H
authors: Asai