title: Fiber field-effect device via in situ channel crystallization.
abstract: The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.
authors: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, 02139, USA.
authors: Sylvain
authors: S
authors: Danto
authors: Fabien
authors: F
authors: Sorin
authors: Nicholas D
authors: ND
authors: Orf
authors: Zheng
authors: Z
authors: Wang
authors: Scott A
authors: SA
authors: Speakman
authors: John D
authors: JD
authors: Joannopoulos
authors: Yoel
authors: Y
authors: Fink
mesh_terms: D018011:Chalcogens / Q000737:chemistry; D003460:Crystallization; D004566:Electrodes; D007700:Kinetics; D008670:Metals / Q000737:chemistry; D012666:Semiconductors / Q000295:instrumentation*
chemical_list: D018011:Chalcogens; D008670:Metals