Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE).
A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).
Park
Jeongho
J
AFRL/RXPS, Wright - Patterson Air Force Base, Ohio 45433, USA. Jeongho.Park@WPAFB.AF.MIL
Mitchel
William C
WC
Grazulis
Lawrence
L
Smith
Howard E
HE
Eyink
Kurt G
KG
Boeckl
John J
JJ
Tomich
David H
DH
Pacley
Shanee D
SD
Hoelscher
John E
JE
D002244:Carbon / Q000737:chemistry*; D037741:Fullerenes / Q000737:chemistry; D018625:Microscopy, Atomic Force; D056951:Photoelectron Spectroscopy; D013059:Spectrum Analysis, Raman
D037741:Fullerenes; D002244:Carbon; C069837:fullerene C60