High current, low voltage carbon nanotube enabled vertical organic field effect transistors.
State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio >10(5) for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm(2). The architecture enables submicrometer channel lengths while avoiding high-resolution patterning. The ability to drive high currents and inexpensive fabrication may provide the solution for the so-called OLED backplane problem.
McCarthy
Mitchell A
MA
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA.
Liu
Bo
B
Rinzler
Andrew G
AG