title: High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.
abstract: We present a high-sensitivity photoreceiver based on a vertical- illumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 microm-diameter mesa shows the -3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at lambda approximately 1.55 microm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of -18.5 dBm for a BER of 10(-12) at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications.
authors: Electronics & Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea.
authors: Jiho
authors: J
authors: Joo
authors: Sanghoon
authors: S
authors: Kim
authors: In Gyoo
authors: IG
authors: Kim
authors: Ki-Seok
authors: KS
authors: Jang
authors: Gyungock
authors: G
authors: Kim
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D005857:Germanium; D008027:Light; D053758:Nanoparticles; D055095:Optics and Photonics / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon
chemical_list: D005857:Germanium; D012825:Silicon