Ultra-low voltage, ultra-small mode volume silicon microring modulator.
We show GHz modulation in a 2.5 microm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 microm(3). The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.
Manipatruni
Sasikanth
S
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA.
Preston
Kyle
K
Chen
Long
L
Lipson
Michal
M
D004581:Electronics / Q000295:instrumentation*; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*
D012825:Silicon