title: Ultralarge-area block copolymer lithography enabled by disposable photoresist prepatterning.
abstract: We accomplished truly scalable, low cost, arbitrarily large-area block copolymer lithography, synergistically integrating the two principles of graphoepitaxy and epitaxial self-assembly. Graphoepitaxy morphology composed of highly aligned lamellar block copolymer film that self-assembled within a disposable photoresist trench pattern was prepared by conventional I-line lithography and utilized as a chemical nanopatterning mask for the underlying substrate. After the block copolymer film and disposable photoresist layer were removed, the same lamellar block copolymer film was epitaxially assembled on the exposed chemically patterned substrate. Highly oriented lamellar morphology was attained without any trace of structure directing the photoresist pattern over an arbitrarily large area.
authors: Department of Materials Science and Engineering, KI for the Nanocentury, KAIST, Daejeon 305-701, Republic of Korea.
authors: Seong-Jun
authors: SJ
authors: Jeong
authors: Hyoung-Seok
authors: HS
authors: Moon
authors: Bong Hoon
authors: BH
authors: Kim
authors: Ju Young
authors: JY
authors: Kim
authors: Jaeho
authors: J
authors: Yu
authors: Sumi
authors: S
authors: Lee
authors: Moon Gyu
authors: MG
authors: Lee
authors: Hwanyoung
authors: H
authors: Choi
authors: Sang Ouk
authors: SO
authors: Kim