High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.
We present a high-sensitivity photoreceiver based on a vertical- illumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 microm-diameter mesa shows the -3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at lambda approximately 1.55 microm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of -18.5 dBm for a BER of 10(-12) at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications.
Joo
Jiho
J
Electronics & Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea.
Kim
Sanghoon
S
Kim
In Gyoo
IG
Jang
Ki-Seok
KS
Kim
Gyungock
G
D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D005857:Germanium; D008027:Light; D053758:Nanoparticles; D055095:Optics and Photonics / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon
D005857:Germanium; D012825:Silicon