On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide.
On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
Ohira
Kazuya
K
Corporate Research & Development Center, Toshiba Corporation,1 Kimukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan. kazuya.ohira@toshiba.co.jp
Kobayashi
Kentaro
K
Iizuka
Norio
N
Yoshida
Haruhiko
H
Ezaki
Mizunori
M
Uemura
Hiroshi
H
Kojima
Akihiro
A
Nakamura
Kenro
K
Furuyama
Hideto
H
Shibata
Hideki
H