Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography.
Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a ZnS-SiO(2) dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge(2)Sb(2)Te(5) thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.
Chu
Cheng Hung
CH
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Shiue
Chiun Da
CD
Cheng
Hsuen Wei
HW
Tseng
Ming Lun
ML
Chiang
Hai-Pang
HP
Mansuripur
Masud
M
Tsai
Din Ping
DP
D000965:Antimony / Q000737:chemistry*; D004581:Electronics / Q000295:instrumentation / Q000379:methods*; D005857:Germanium / Q000737:chemistry*; D016247:Information Storage and Retrieval / Q000379:methods*; D007834:Lasers; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D055096:Optical Devices; D013691:Tellurium / Q000737:chemistry*
D005857:Germanium; D000965:Antimony; D013691:Tellurium