AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films.
AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density ρs of 0.10 μm(-1) and a fracture energy Γ of 49.6 J m(-2). On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and ρs.
Choi
Hong Rak
HR
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Mohanty
Bhaskar Chandra
BC
Kim
Jong Seong
JS
Cho
Yong Soo
YS
D017607:Aluminum Compounds / Q000737:chemistry*; D055119:Elastic Modulus; D008422:Materials Testing; D008567:Membranes, Artificial; D013718:Tensile Strength; D015034:Zinc Oxide / Q000737:chemistry*
D017607:Aluminum Compounds; D008567:Membranes, Artificial; C052045:aluminum nitride; D015034:Zinc Oxide