title: Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111).
abstract: A series of 3C-SiC films have been grown by a novel method of solid-gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.
authors: T S
authors: TS
authors: Perova
authors: J
authors: J
authors: Wasyluk
authors: S A
authors: SA
authors: Kukushkin
authors: A V
authors: AV
authors: Osipov
authors: N A
authors: NA
authors: Feoktistov
authors: S A
authors: SA
authors: Grudinkin