title: High-performance flexible graphene field effect transistors with ion gel gate dielectrics.
abstract: A high-performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 +/- 57 and 91 +/- 50 cm(2)/(V x s), respectively, at a drain bias of -1 V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.
authors: Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul 156-743, Korea.
authors: Beom Joon
authors: BJ
authors: Kim
authors: Houk
authors: H
authors: Jang
authors: Seoung-Ki
authors: SK
authors: Lee
authors: Byung Hee
authors: BH
authors: Hong
authors: Jong-Hyun
authors: JH
authors: Ahn
authors: Jeong Ho
authors: JH
authors: Cho