title: The effect of nonideal polar monolayers on molecular gated transistors.
abstract: Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.
authors.affiliation: School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel.
authors.forename: O
authors.initials: O
authors.lastname: Shaya
authors.forename: I
authors.initials: I
authors.lastname: Amit
authors.forename: Y
authors.initials: Y
authors.lastname: Rosenwaks
mesh_terms: D015374:Biosensing Techniques / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry; D004574:Electromagnetic Fields; D010087:Oxides / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D010087:Oxides; D012825:Silicon