Molecular doping and subsurface dopant reactivation in si nanowires.
Impurity doping in semiconductor nanowires, while increasingly well understood, is not yet controllable at a satisfactory degree. The large surface-to-volume area of these systems, however, suggests that adsorption of the appropriate molecular complexes on the wire sidewalls could be a viable alternative to conventional impurity doping. We perform first-principles electronic structure calculations to assess the possibility of n- and p-type doping of Si nanowires by exposure to NH(3) and NO(2). Besides providing a full rationalization of the experimental results recently obtained in mesoporous Si, our calculations show that while NH(3) is a shallow donor, NO(2) yields p-doping only when passive surface segregated B atoms are present.
Miranda-Durán
Alvaro
A
Departament d'Enginyeria Electònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain.
Cartoixà
Xavier
X
Cruz Irisson
Miguel
M
Rurali
Riccardo
R