title: A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory.
abstract: Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of > 10(8), and a forward current density of > 10(5) A cm(-2) for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m >> 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.forename: Jun Yeong
authors.initials: JY
authors.lastname: Seok
authors.forename: Hyun Ju
authors.initials: HJ
authors.lastname: Lee
authors.forename: Deok-Yong
authors.initials: DY
authors.lastname: Cho
authors.forename: Jeong Hwan
authors.initials: JH
authors.lastname: Han
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang