title: Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.
abstract: We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition. The active region is embedded in a p-i-n diode, and absorption spectra at different reverse bias voltages are obtained from optical transmission, photocurrent, and differential transmission measurements. The measurements provide accurate values of the fraction of light absorbed per well of the Ge/SiGe MQWs. Both Stark shift and reduction of exciton absorption peak are observed. Differential transmission indicates that there is no thermal contribution to these effects.
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS, 91405 Orsay, France.
authors.forename: Papichaya
authors.initials: P
authors.lastname: Chaisakul
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.forename: Daniel
authors.initials: D
authors.lastname: Chrastina
authors.forename: Xavier
authors.initials: X
authors.lastname: Le Roux
authors.forename: Eleonora
authors.initials: E
authors.lastname: Gatti
authors.forename: Samson
authors.initials: S
authors.lastname: Edmond
authors.forename: Johann
authors.initials: J
authors.lastname: Osmond
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien