title: Scaling constraints in nanoelectronic random-access memories.
abstract: Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the potential to present significant area advantages (4 to 6F(2)) compared to CMOS-based systems. The scalability of these conductivity-switched RAM arrays is examined by establishing criteria for correct functionality based on the readout margin. Using a combined circuit theoretical modelling and simulation approach, the impact of both the device and interconnect architecture on the scalability of a conductivity-state memory system is quantified. This establishes criteria showing the conditions and on/off ratios for the large-scale integration of molecular devices, guiding molecular device design. With 10% readout margin on the resistive load, a memory device needs to have an on/off ratio of at least 7 to be integrated into a 64 x 64 array, while an on/off ratio of 43 is necessary to scale the memory to 512 x 512.
authors.affiliation: North Carolina State University, PO Box 7911, Raleigh, NC 27695-7911, USA.
authors.forename: Christian J
authors.initials: CJ
authors.lastname: Amsinck
authors.forename: Neil H
authors.initials: NH
authors.lastname: Di Spigna
authors.forename: David P
authors.initials: DP
authors.lastname: Nackashi
authors.forename: Paul D
authors.initials: PD
authors.lastname: Franzon