title: Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate.
abstract: Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO(2)/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO(2)/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of "trench-guided" and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO(2)/Si will greatly contribute to future large-scale nanoelectronic applications.
authors.affiliation: Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan.
authors.forename: Carlo M
authors.initials: CM
authors.lastname: Orofeo
authors.forename: Hiroki
authors.initials: H
authors.lastname: Ago
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Ikuta
authors.forename: Koji
authors.initials: K
authors.lastname: Takahasi
authors.forename: Masaharu
authors.initials: M
authors.lastname: Tsuji
mesh_terms: D004581:Electronics; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D010084:Oxidation-Reduction; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013696:Temperature
chemical_list: D037742:Nanotubes, Carbon; D012822:Silicon Dioxide; D012825:Silicon