title: Transverse piezoelectric field-effect transistor based on single ZnO nanobelts.
abstract: A transverse piezoelectric field-effect transistor (TP-FET) based on single ZnO nanobelts has been fabricated on a metallic graphite substrate in an atomic force microscope (AFM). The source-to-drain current of the TP-FET was found to decrease with increasing loading force under a positive bias due to the carrier-trapping effect and the creation of a charge-depletion zone. This TP-FET can be applied as a force/pressure sensor for measuring nanoNewton forces ranged from 0 to 700 nN.
authors.affiliation: State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, PR China.
authors.forename: Ya
authors.initials: Y
authors.lastname: Yang
authors.forename: Junjie
authors.initials: J
authors.lastname: Qi
authors.forename: Wen
authors.initials: W
authors.lastname: Guo
authors.forename: Yousong
authors.initials: Y
authors.lastname: Gu
authors.forename: Yunhua
authors.initials: Y
authors.lastname: Huang
authors.forename: Yue
authors.initials: Y
authors.lastname: Zhang