title: On resonant scatterers as a factor limiting carrier mobility in graphene.
abstract: We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate.
authors.affiliation: Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: Z H
authors.initials: ZH
authors.lastname: Ni
authors.forename: L A
authors.initials: LA
authors.lastname: Ponomarenko
authors.forename: R R
authors.initials: RR
authors.lastname: Nair
authors.forename: R
authors.initials: R
authors.lastname: Yang
authors.forename: S
authors.initials: S
authors.lastname: Anissimova
authors.forename: I V
authors.initials: IV
authors.lastname: Grigorieva
authors.forename: F
authors.initials: F
authors.lastname: Schedin
authors.forename: P
authors.initials: P
authors.lastname: Blake
authors.forename: Z X
authors.initials: ZX
authors.lastname: Shen
authors.forename: E H
authors.initials: EH
authors.lastname: Hill
authors.forename: K S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: A K
authors.initials: AK
authors.lastname: Geim