Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation.
Nanowire-superlattices with different structural phases along the nanowire direction, such as wurtzite (WZ) and zincblende (ZB) forms of the same compound, often exhibit a "type II" band-alignment with electrons on ZB and holes on WZ. This is a material property of most of III-V semiconductors. We show via InP nanowires that as the nanowire diameter decreases, quantum-confinement alters this basic material property, placing both electrons and holes on the same (ZB) phase. This structural design causes a dramatic increase in absorption strength and reduced radiative lifetime.
Zhang
Lijun
L
National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
Luo
Jun-Wei
JW
Zunger
Alex
A
Akopian
Nika
N
Zwiller
Val
V
Harmand
Jean-Christophe
JC