title: Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration.
abstract: The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk n-Si are calculated for electron concentrations as high as 1.3 x 10(20) cm(-3). These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.
authors.forename: S
authors.initials: S
authors.lastname: Hava
authors.forename: M
authors.initials: M
authors.lastname: Auslender