title: Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices.
authors.affiliation: Institute of Solid State Research, Research Center Juelich, 52425 Juelich, Germany. ru.muenstermann@fz-juelich.de
authors.forename: Ruth
authors.initials: R
authors.lastname: Muenstermann
authors.forename: Tobias
authors.initials: T
authors.lastname: Menke
authors.forename: Regina
authors.initials: R
authors.lastname: Dittmann
authors.forename: Rainer
authors.initials: R
authors.lastname: Waser
mesh_terms: D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007501:Iron / Q000737:chemistry*; D008567:Membranes, Artificial; D010087:Oxides / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013324:Strontium / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*
chemical_list: D008567:Membranes, Artificial; D010087:Oxides; D014025:Titanium; D007501:Iron; C119252:strontium titanium oxide; D013324:Strontium