Fabrication and anomalous transport properties of an Sb/Bi segment nanowire nanojunction array.
An Sb (40 nm diameter)-Bi (30 nm diameter) segment nanowire nanojunction array was fabricated by pulsed electrodeposition. Electric transport properties of the junction array were studied down to 4.2 K and in magnetic fields up to 5 T. Temperature versus resistance measurements exhibited a resistive switching behaviour at zero magnetic field, but this feature disappeared with increasing magnetic field. These features might find application in sub-100 nm metal-semiconductor field effect transistors.
Zhang
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Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Li
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Li
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