title: Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation.
abstract: Nanowire-superlattices with different structural phases along the nanowire direction, such as wurtzite (WZ) and zincblende (ZB) forms of the same compound, often exhibit a "type II" band-alignment with electrons on ZB and holes on WZ. This is a material property of most of III-V semiconductors. We show via InP nanowires that as the nanowire diameter decreases, quantum-confinement alters this basic material property, placing both electrons and holes on the same (ZB) phase. This structural design causes a dramatic increase in absorption strength and reduced radiative lifetime.
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: Lijun
authors.initials: L
authors.lastname: Zhang
authors.forename: Jun-Wei
authors.initials: JW
authors.lastname: Luo
authors.forename: Alex
authors.initials: A
authors.lastname: Zunger
authors.forename: Nika
authors.initials: N
authors.lastname: Akopian
authors.forename: Val
authors.initials: V
authors.lastname: Zwiller
authors.forename: Jean-Christophe
authors.initials: JC
authors.lastname: Harmand