Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
Plissard
Sébastien
S
Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Villeneuve d'Ascq, France. sebastien.plissard@free.fr
Dick
Kimberly A
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Larrieu
Guilhem
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Godey
Sylvie
S
Addad
Ahmed
A
Wallart
Xavier
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Caroff
Philippe
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