title: Quantum linear magnetoresistance in multilayer epitaxial graphene.
abstract: We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators.
authors.affiliation: Code 6876, U.S. Naval Research Laboratory, Washington, DC 20375, USA.
authors.forename: Adam L
authors.initials: AL
authors.lastname: Friedman
authors.forename: Joseph L
authors.initials: JL
authors.lastname: Tedesco
authors.forename: Paul M
authors.initials: PM
authors.lastname: Campbell
authors.forename: James C
authors.initials: JC
authors.lastname: Culbertson
authors.forename: Edward
authors.initials: E
authors.lastname: Aifer
authors.forename: F Keith
authors.initials: FK
authors.lastname: Perkins
authors.forename: Rachael L
authors.initials: RL
authors.lastname: Myers-Ward
authors.forename: Jennifer K
authors.initials: JK
authors.lastname: Hite
authors.forename: Charles R
authors.initials: CR
authors.lastname: Eddy
authors.forename: Glenn G
authors.initials: GG
authors.lastname: Jernigan
authors.forename: D Kurt
authors.initials: DK
authors.lastname: Gaskill