Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration.
The infrared optical constants (index of refraction and extinction coefficient) and absorptance for doped bulk n-Si are calculated for electron concentrations as high as 1.3 x 10(20) cm(-3). These calculations are based on the generalized Drude-Lorentz approximation and predict nonmonotonic behavior of absorption as a function of electron concentration.
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Auslender
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