Patterning of self-assembled pentacene nanolayers by extreme ultraviolet-induced three-dimensional polymerization.
Most researchers expect extreme ultraviolet lithography (EUVL) to be used to create patterns below 32 nm in semiconductor devices. An ultrathin EUV photoresist (PR) layer a few nanometers thick is required to further reduce the minimum feature size. Here, we show for the first time that pentacene molecular layers can be employed as a new EUV resist. Nanometer-scale dots and lines have been successfully realized using the new molecular resist. We clearly show the mechanism that forms the nanopatterns using a scanning photoemission microscope, EUV interference lithography, an atomic force microscope, and photoemission spectroscopy. The molecular PR has several advantages over traditional polymer EUV PRs. For example, it has high thermal/chemical stability, negligible outgassing, the ability to control the height and width on the nanometer scale, fewer residuals, no need for a chemical development process and thus a reduction of chemical waste when making nanopatterns. Besides, it can be applied to any substrate to which pentacene bonds chemically, such as SiO2, SiN, and SiON, which are important films in the semiconductor device industry.
Jee
Hae-Geun
HG
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Hwang
Han-Na
HN
Han
Jin-Hee
JH
Lim
Jun
J
Shin
Hyun-Joon
HJ
Kim
Young Dok
YD
Solak
Harun H
HH
Hwang
Chan-Cuk
CC