title: Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties.
abstract: Well-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work.
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea.
authors.forename: Jong Seok
authors.initials: JS
authors.lastname: Jeong
authors.forename: Jeong Yong
authors.initials: JY
authors.lastname: Lee
authors.forename: Jung Hee
authors.initials: JH
authors.lastname: Cho
authors.forename: Cheol Jin
authors.initials: CJ
authors.lastname: Lee
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: An
authors.forename: Gyu-Chul
authors.initials: GC
authors.lastname: Yi
authors.forename: Ronald
authors.initials: R
authors.lastname: Gronsky