Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties.
Well-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work.
Jeong
Jong Seok
JS
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Lee
Jeong Yong
JY
Cho
Jung Hee
JH
Lee
Cheol Jin
CJ
An
Sung-Jin
SJ
Yi
Gyu-Chul
GC
Gronsky
Ronald
R