Transverse piezoelectric field-effect transistor based on single ZnO nanobelts.
A transverse piezoelectric field-effect transistor (TP-FET) based on single ZnO nanobelts has been fabricated on a metallic graphite substrate in an atomic force microscope (AFM). The source-to-drain current of the TP-FET was found to decrease with increasing loading force under a positive bias due to the carrier-trapping effect and the creation of a charge-depletion zone. This TP-FET can be applied as a force/pressure sensor for measuring nanoNewton forces ranged from 0 to 700 nN.
Yang
Ya
Y
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, PR China.
Qi
Junjie
J
Guo
Wen
W
Gu
Yousong
Y
Huang
Yunhua
Y
Zhang
Yue
Y