Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate.
Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO(2)/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO(2)/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of "trench-guided" and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO(2)/Si will greatly contribute to future large-scale nanoelectronic applications.
Orofeo
Carlo M
CM
Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan.
Ago
Hiroki
H
Ikuta
Tatsuya
T
Takahasi
Koji
K
Tsuji
Masaharu
M
D004581:Electronics; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D010084:Oxidation-Reduction; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013696:Temperature
D037742:Nanotubes, Carbon; D012822:Silicon Dioxide; D012825:Silicon