title: Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
abstract: We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
authors.affiliation: Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Villeneuve d'Ascq, France. sebastien.plissard@free.fr
authors.forename: Sébastien
authors.initials: S
authors.lastname: Plissard
authors.forename: Kimberly A
authors.initials: KA
authors.lastname: Dick
authors.forename: Guilhem
authors.initials: G
authors.lastname: Larrieu
authors.forename: Sylvie
authors.initials: S
authors.lastname: Godey
authors.forename: Ahmed
authors.initials: A
authors.lastname: Addad
authors.forename: Xavier
authors.initials: X
authors.lastname: Wallart
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff