title: DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
abstract: DC and intrinsic low-frequency noise properties of p-channel depletion-mode carbon nanotube field effect transistors (CNT-FETs) are investigated. To characterize the intrinsic noise properties, a thin atomic layer deposited (ALD) HfO(2) gate dielectric is used as a passivation layer to isolate CNT-FETs from environmental factors. The ALD HfO(2) gate dielectric in these high-performance top-gated devices is instrumental in attaining hysteresis-free current-voltage characteristics and minimizes low-frequency noise. Under small drain-source voltage, the carriers in the CNT channel are modulated by the gate electrode and the intrinsic 1/f noise is found to be correlated with charge trapping/detrapping from the oxide substrate as expected. When thermionic emission is the dominant carrier transport mechanism in CNT-FETs under large drain-source voltages, the excess 1/f noise is attributed to the noise stemming from metal-CNT Schottky barrier contacts as revealed by the measurements.
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.
authors.forename: Sunkook
authors.initials: S
authors.lastname: Kim
authors.forename: Seongmin
authors.initials: S
authors.lastname: Kim
authors.forename: David B
authors.initials: DB
authors.lastname: Janes
authors.forename: Saeed
authors.initials: S
authors.lastname: Mohammadi
authors.forename: Juhee
authors.initials: J
authors.lastname: Back
authors.forename: Moonsub
authors.initials: M
authors.lastname: Shim