title: Fabrication and anomalous transport properties of an Sb/Bi segment nanowire nanojunction array.
abstract: An Sb (40 nm diameter)-Bi (30 nm diameter) segment nanowire nanojunction array was fabricated by pulsed electrodeposition. Electric transport properties of the junction array were studied down to 4.2 K and in magnetic fields up to 5 T. Temperature versus resistance measurements exhibited a resistive switching behaviour at zero magnetic field, but this feature disappeared with increasing magnetic field. These features might find application in sub-100 nm metal-semiconductor field effect transistors.
authors.affiliation: Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
authors.forename: Y
authors.initials: Y
authors.lastname: Zhang
authors.forename: L
authors.initials: L
authors.lastname: Li
authors.forename: G H
authors.initials: GH
authors.lastname: Li