Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.
We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition. The active region is embedded in a p-i-n diode, and absorption spectra at different reverse bias voltages are obtained from optical transmission, photocurrent, and differential transmission measurements. The measurements provide accurate values of the fraction of light absorbed per well of the Ge/SiGe MQWs. Both Stark shift and reduction of exciton absorption peak are observed. Differential transmission indicates that there is no thermal contribution to these effects.
Chaisakul
Papichaya
P
Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS, 91405 Orsay, France.
Marris-Morini
Delphine
D
Isella
Giovanni
G
Chrastina
Daniel
D
Le Roux
Xavier
X
Gatti
Eleonora
E
Edmond
Samson
S
Osmond
Johann
J
Cassan
Eric
E
Vivien
Laurent
L