Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices.
Muenstermann
Ruth
R
Institute of Solid State Research, Research Center Juelich, 52425 Juelich, Germany. ru.muenstermann@fz-juelich.de
Menke
Tobias
T
Dittmann
Regina
R
Waser
Rainer
R
D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007501:Iron / Q000737:chemistry*; D008567:Membranes, Artificial; D010087:Oxides / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013324:Strontium / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*
D008567:Membranes, Artificial; D010087:Oxides; D014025:Titanium; D007501:Iron; C119252:strontium titanium oxide; D013324:Strontium