Simulation of thin-film growth.
A two-dimensional simulation model of thin-film deposition, which involves the effect of the incident kinetic energy of atoms and the mobility of the substrate temperature, is developed. Lennard-Jones potential and nuclear scattering are used to characterize the atom-atom interaction. The effect of substrate temperature on the relaxation of depositing particles is also considered. Some simulation results are presented and discussed in detail.
Xia
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Liu
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Gu
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