Subeutectic synthesis of epitaxial Si-NWs with diverse catalysts using a novel Si precursor.
The applicability of a novel silicon precursor with respect to reasonable nanowire (NW) growth rates, feasibility of epitaxial NW growth and versatility with respect to diverse catalysts was investigated. Epitaxial growth of Si-NWs was achieved using octochlorotrisilane (OCTS) as Si precursor and Au as catalyst. In contrast to the synthesis approach with SiCl(4) as precursor, OCTS provides Si without the addition of H(2). By optimizing the growth conditions, effective NW synthesis is shown for alternative catalysts, in particular, Cu, Ag, Ni, and Pt with the latter two being compatible to complementary metal-oxide-semiconductor technology. As for these catalysts, the growth temperatures are lower than the lowest liquid eutectic; we suggest that the catalyst particle is in the solid state during NW growth and that a solid-phase diffusion process, either in the bulk, on the surface, or both, must be responsible for NW nucleation.
Molnar
W
W
Institute for Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria.
Lugstein
A
A
Pongratz
P
P
Auner
N
N
Bauch
C
C
Bertagnolli
E
E