Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics.
The radio frequency response of InAs nanowire array transistors on mechanically flexible substrates is characterized. For the first time, GHz device operation of nanowire arrays is demonstrated, despite the relatively long channel lengths of ∼1.5 μm used in this work. Specifically, the transistors exhibit an impressive maximum frequency of oscillation, f(max) ∼ 1.8 GHz, and a cutoff frequency, f(t) ∼ 1 GHz. The high-frequency response of the devices is due to the high saturation velocity of electrons in high-mobility InAs nanowires. The work presents a new platform for flexible, ultrahigh frequency devices with potential applications in high-performance digital and analog circuitry.
Takahashi
Toshitake
T
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Takei
Kuniharu
K
Adabi
Ehsan
E
Fan
Zhiyong
Z
Niknejad
Ali M
AM
Javey
Ali
A