title: Counting metastable states within the adsorption/desorption hysteresis loop: A molecular simulation study of confinement in heterogeneous pores.
abstract: A molecular simulation approach has been used to model simple fluid adsorption in heterogeneous tubular pores mimicking mesoporous materials such as MCM-41 or porous silicon, allowing to determine the amount adsorbed ρ as a function of the chemical potential μ. A hysteresis loop is observed in adsorption/desorption cycles, which is closely connected to the appearance of many metastable states. The density of these metastable states is studied in the μ-ρ plane. Experimentally, the accessible metastable states are those that can be attained by the μ-path, i.e., a series of increasing or decreasing μ steps. One could also imagine using a quench from high temperature. Although the total density of metastable states is not directly accessible to experiments, it is of primary theoretical importance to understand the structure of metastable states in the hysteresis as determined experimentally. The disorder associated with the porous material realizations is accurately taken into account, and a systematic system size analysis is also performed in order to study the thermodynamic limit. It is shown that the quenched complexity is the relevant quantity to understand the hysteresis structure in the thermodynamic limit. It clearly exhibits a distinctive behavior depending on the distribution of heterogeneities characterizing the disorder in the pore. Some analogies can be found with the situation where an out-of-equilibrium transition appears, but careful examination of the data suggests another interpretation.
authors.affiliation: Centre de Recherche sur la Matière Divisée, CNRS-Université d'Orléans, 1b rue de la Férollerie, Orléans Cedex 02 45071, France. puibasset@cnrs-orleans.fr
authors.forename: Joël
authors.initials: J
authors.lastname: Puibasset
mesh_terms: D000327:Adsorption; D056004:Molecular Dynamics Simulation; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D013816:Thermodynamics
chemical_list: C509968:MCM-41; D012822:Silicon Dioxide; D012825:Silicon