InAs quantum dot arrays decorating the facets of GaAs nanowires.
InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the facets are capped with an ultrathin AlAs layer, as demonstrated by atomic force, high-resolution electron microscopy, and energy-dispersive X-ray spectroscopy line scans. The excitation of single and double excitons in the quantum dots are demonstrated by low-temperature photoluminescence spectroscopy realized on the single nanowires. This new type of heterostructures opens a new avenue to the fabrication of highly efficient single-photon sources, novel quantum optics experiments, as well as the realization of intermediate-band nanowire solar cells for third-generation photovoltaics.
Uccelli
Emanuele
E
Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Arbiol
Jordi
J
Morante
Joan Ramon
JR
Fontcuberta i Morral
Anna
A