Reversible resistive switching and multilevel recording in La0.7Sr0.3MnO3 thin films for low cost nonvolatile memories.
On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La(0.7)Sr(0.3)MnO(3) to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.
Moreno
César
C
Institut de Ciència de Materials de Barcelona, CSIC, Campus de la UAB, 08193-Bellaterra, Spain.
Munuera
Carmen
C
Valencia
Sergio
S
Kronast
Florian
F
Obradors
Xavier
X
Ocal
Carmen
C