title: Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes.
abstract: We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA.
authors.affiliation: School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea.
authors.forename: Hyung Gu
authors.initials: HG
authors.lastname: Kim
authors.forename: Hyun Kyu
authors.initials: HK
authors.lastname: Kim
authors.forename: Hee Yun
authors.initials: HY
authors.lastname: Kim
authors.forename: Hyun
authors.initials: H
authors.lastname: Jeong
authors.forename: S
authors.initials: S
authors.lastname: Chandramohan
authors.forename: Periyayya
authors.initials: P
authors.lastname: Uthirakumar
authors.forename: Mun Seok
authors.initials: MS
authors.lastname: Jeong
authors.forename: Jeong-Sik
authors.initials: JS
authors.lastname: Lee
authors.forename: Eun-Kyung
authors.initials: EK
authors.lastname: Suh
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong