title: Mask technologies for soft-x-ray projection lithography at 13 nm.
abstract: We describe a variety of technologies for patterning transmissive and reflective soft x-ray projectionlithography masks containing features as small as 0.1 µm. The transmission masks fabricated for use at 13 nm are of one type, a Ge-absorbing layer patterned on a boron-doped Si membrane. Reflective masks were patterned by various methods that included absorbing layers formed on top of multilayer reflectors, multilayer-reflector-coating removal by reactive ion etching, and ion damage of multilayer regions by ion implantation. For the first time, we believe, a process for absorber repair that does not significantly damage the reflectance of the multilayer coating on the reflection mask is demonstrated.
authors.forename: D M
authors.initials: DM
authors.lastname: Tennant
authors.forename: L A
authors.initials: LA
authors.lastname: Fetter
authors.forename: L R
authors.initials: LR
authors.lastname: Harriott
authors.forename: A A
authors.initials: AA
authors.lastname: Macdowell
authors.forename: P P
authors.initials: PP
authors.lastname: Mulgrew
authors.forename: J Z
authors.initials: JZ
authors.lastname: Pastalan
authors.forename: W K
authors.initials: WK
authors.lastname: Waskiewicz
authors.forename: D L
authors.initials: DL
authors.lastname: Windt
authors.forename: O R
authors.initials: OR
authors.lastname: Wood Ii