title: Toward high throughput interconvertible graphane-to-graphene growth and patterning.
abstract: We report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO(2)-Si. The advantages of the plasma deposition include very short deposition time (<5 min) and a lower growth temperature of 650 °C compared to the current thermal chemical vapor deposition approach (1000 °C). Near edge X-ray adsorption, Raman spectroscopy, and transmission electron microscopy as well as scanning tunneling microscopy have been applied to characterize the graphane-to-graphene transition for the as-deposited films. The fingerprint quantum hall effect of monolayer graphene can be obtained on the fully dehydrogenated graphane-like film; four fully quantized half-integer plateaus are observed. The interconvertibility between graphane-like and graphene here opens up a possible route for the fabrication of regions with varying conductivity in a single deposition system using maskless, laser writing.
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.forename: Xiangfan
authors.initials: X
authors.lastname: Xu
authors.forename: Jiong
authors.initials: J
authors.lastname: Lu
authors.forename: Ming
authors.initials: M
authors.lastname: Lin
authors.forename: Qiaoliang
authors.initials: Q
authors.lastname: Bao
authors.forename: Barbaros
authors.initials: B
authors.lastname: Özyilmaz
authors.forename: Kian Ping
authors.initials: KP
authors.lastname: Loh