Transforming insulating rutile single crystal into a fully ordered nanometer-thick transparent semiconductor.
Rutile single crystals treated with ion-beam preferential etching (IBPE) are investigated with electrical transport and transmission electron microscopy. The initially insulating single crystals show the formation of an oxygen vacancy-rich, highly ordered, thin conducting layer, below a crystalline rutile TiO(2) surface layer. Carrier concentrations of 10(19) cm(-3) and very high mobilities of the order of 300 cm(2) V(-1) s(-1) are observed in the nanolayers. The observations indicate that rutile single crystals can be effectively transformed into controlled conducting material using IBPE for creating a new breakthrough in transparent conducting media.
Singh
A
A
Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Hänisch
J
J
Matias
V
V
Ronning
F
F
Mara
N
N
Pohl
D
D
Rellinghaus
B
B
Reagor
D
D