Resist alternatives for sub-0.35-µm lithography by using highly attenuated radiation.
The photoresist processes used for lithography at wavelengths from the deep UY to the soft x ray will need to accommodate the strong resist film absorbance inherent in this wavelength range. Already silylation processes have been demonstrated as manufacturable near-surface-imaged resists in the deep UV. In addition other chemistries are being developed that take advantage of near-surface or at-the-surface imaging. Together these new approaches to imaging will provide not only greater wavelength flexibility but have potential for improved exposure and focus tolerances as well. These attributes will become important as device dimensions are reduced from 0.35 down to 0.1 µm.
Kunz
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Hartney
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Rothschild
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