Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes.
We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA.
Kim
Hyung Gu
HG
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea.
Kim
Hyun Kyu
HK
Kim
Hee Yun
HY
Jeong
Hyun
H
Chandramohan
S
S
Uthirakumar
Periyayya
P
Jeong
Mun Seok
MS
Lee
Jeong-Sik
JS
Suh
Eun-Kyung
EK
Hong
Chang-Hee
CH