title: Electromechanical computing at 500 degrees C with silicon carbide.
abstract: Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300 degrees C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500 degrees C with ultralow leakage current.
authors.affiliation: Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA. tehao@case.edu
authors.forename: Te-Hao
authors.initials: TH
authors.lastname: Lee
authors.forename: Swarup
authors.initials: S
authors.lastname: Bhunia
authors.forename: Mehran
authors.initials: M
authors.lastname: Mehregany