title: Three-dimensional integration of organic resistive memory devices.
authors.affiliation: Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Korea.
authors.forename: Sunghoon
authors.initials: S
authors.lastname: Song
authors.forename: Byungjin
authors.initials: B
authors.lastname: Cho
authors.forename: Tae-Wook
authors.initials: TW
authors.lastname: Kim
authors.forename: Yongsung
authors.initials: Y
authors.lastname: Ji
authors.forename: Minseok
authors.initials: M
authors.lastname: Jo
authors.forename: Gunuk
authors.initials: G
authors.lastname: Wang
authors.forename: Minhyeok
authors.initials: M
authors.lastname: Choe
authors.forename: Yung Ho
authors.initials: YH
authors.lastname: Kahng
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D037741:Fullerenes / Q000737:chemistry*; D007094:Imides / Q000737:chemistry; D011108:Polymers / Q000737:chemistry*
chemical_list: C539575:(6,6)-phenyl C61-butyric acid methyl ester; D037741:Fullerenes; D007094:Imides; D011108:Polymers