title: Simulation of thin-film growth.
abstract: A two-dimensional simulation model of thin-film deposition, which involves the effect of the incident kinetic energy of atoms and the mobility of the substrate temperature, is developed. Lennard-Jones potential and nuclear scattering are used to characterize the atom-atom interaction. The effect of substrate temperature on the relaxation of depositing particles is also considered. Some simulation results are presented and discussed in detail.
authors.forename: M
authors.initials: M
authors.lastname: Xia
authors.forename: X
authors.initials: X
authors.lastname: Liu
authors.forename: P
authors.initials: P
authors.lastname: Gu