title: Transforming insulating rutile single crystal into a fully ordered nanometer-thick transparent semiconductor.
abstract: Rutile single crystals treated with ion-beam preferential etching (IBPE) are investigated with electrical transport and transmission electron microscopy. The initially insulating single crystals show the formation of an oxygen vacancy-rich, highly ordered, thin conducting layer, below a crystalline rutile TiO(2) surface layer. Carrier concentrations of 10(19) cm(-3) and very high mobilities of the order of 300 cm(2) V(-1) s(-1) are observed in the nanolayers. The observations indicate that rutile single crystals can be effectively transformed into controlled conducting material using IBPE for creating a new breakthrough in transparent conducting media.
authors.affiliation: Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
authors.forename: A
authors.initials: A
authors.lastname: Singh
authors.forename: J
authors.initials: J
authors.lastname: Hänisch
authors.forename: V
authors.initials: V
authors.lastname: Matias
authors.forename: F
authors.initials: F
authors.lastname: Ronning
authors.forename: N
authors.initials: N
authors.lastname: Mara
authors.forename: D
authors.initials: D
authors.lastname: Pohl
authors.forename: B
authors.initials: B
authors.lastname: Rellinghaus
authors.forename: D
authors.initials: D
authors.lastname: Reagor