title: Design considerations for high-power GalnP/AlGalnP unstable-resonator semiconductor lasers.
abstract: Simple expressions are derived to evaluate the lasing condition and power characteristics of unstableresonator semiconductor lasers (URSL's). The gain-loss characteristics of several quantum-well materials are summarized and found to be important for URSL design considerations. To optimize URSL performance, the cavity length needs to approach an optimum value, which varies from ~300 µm for an InGaAs/GaAs graded-index separate-confinement-heterostructure single-quantum-well (GRINSCHSQW) to ~1000 µm for GaInP/AlGaInP GRINSCH-SQW materials. A set of high-power (1-W, double-mirror, pulsed) 660-nm wavelength GaInP/AlGaInP URSL's with magnification of 2.5 were fabricated using focused-ion-beam micromachining technology. The brightness of a 300 µm × 1500 µm URSL approaches 320 MW cm(-2) Sr(-1) at a pump current of 3000 mA.
authors.forename: Z
authors.initials: Z
authors.lastname: Bao
authors.forename: R K
authors.initials: RK
authors.lastname: Defreez
authors.forename: P D
authors.initials: PD
authors.lastname: Carleson
authors.forename: M K
authors.initials: MK
authors.lastname: Felisky
authors.forename: C
authors.initials: C
authors.lastname: Largent
authors.forename: H B
authors.initials: HB
authors.lastname: Serreze