title: High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage.
abstract: Fast, compact, and power-efficient silicon microcavity electro-optic modulators are expected to be critical components for chip-level optical interconnects. It is highly desirable that these modulators can be driven by voltage swings of 1 V or less to reduce power dissipation and make them compatible with voltage supply levels associated with current and future complementary metal-oxide-semiconductor technology nodes. Here, we present a silicon racetrack resonator modulator that achieves over 8 dB modulation depth at 12.5 Gbps with a 1 V swing. In addition, the use of a racetrack resonator geometry relaxes the tight lithography resolution requirements typically associated with microring resonators and enhances the ability to use common lithographic optical techniques for their fabrication.
authors.affiliation: Kotura, Inc., 2630 Corporate Place, Monterey Park, California 91754, USA. pdong@kotura.com
authors.forename: Po
authors.initials: P
authors.lastname: Dong
authors.forename: Shirong
authors.initials: S
authors.lastname: Liao
authors.forename: Hong
authors.initials: H
authors.lastname: Liang
authors.forename: Wei
authors.initials: W
authors.lastname: Qian
authors.forename: Xin
authors.initials: X
authors.lastname: Wang
authors.forename: Roshanak
authors.initials: R
authors.lastname: Shafiiha
authors.forename: Dazeng
authors.initials: D
authors.lastname: Feng
authors.forename: Guoliang
authors.initials: G
authors.lastname: Li
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Zheng
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy
authors.forename: Mehdi
authors.initials: M
authors.lastname: Asghari