title: Giant magnetoresistance in organic spin valves.
abstract: Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Dali
authors.initials: D
authors.lastname: Sun
authors.forename: Lifeng
authors.initials: L
authors.lastname: Yin
authors.forename: Chengjun
authors.initials: C
authors.lastname: Sun
authors.forename: Hangwen
authors.initials: H
authors.lastname: Guo
authors.forename: Zheng
authors.initials: Z
authors.lastname: Gai
authors.forename: X-G
authors.initials: XG
authors.lastname: Zhang
authors.forename: T Z
authors.initials: TZ
authors.lastname: Ward
authors.forename: Zhaohua
authors.initials: Z
authors.lastname: Cheng
authors.forename: Jian
authors.initials: J
authors.lastname: Shen