title: Carrier localization on surfaces of organic semiconductors gated with electrolytes.
abstract: Organic semiconductor single crystals gated with electrolytes exhibit a pronounced maximum in channel conductance at hole densities >10(13)   cm(-2). The cause is a strong decrease in the hole mobility with increasing charge density, which is explained in terms of a percolation model that incorporates trapping of holes by ions at the semiconductor-electrolyte interface. In the case of rubrene crystals, the peak channel conductance occurs at hole densities near 3 × 10(13)  cm(-2). The magnitude of the effect will be large for semiconductors with low dielectric constants and narrow bandwidths, and thus is likely to be a general phenomenon in organic semiconductors gated with electrolytes.
authors.affiliation: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis 55455, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Xia
authors.forename: Wei
authors.initials: W
authors.lastname: Xie
authors.forename: P Paul
authors.initials: PP
authors.lastname: Ruden
authors.forename: C Daniel
authors.initials: CD
authors.lastname: Frisbie