CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns.
A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al(2)O(3)) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al(2)O(3) nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.
Gay
G
G
CEA LETI MINATEC, Grenoble, France. guillaume.gay@cea.fr
Baron
T
T
Agraffeil
C
C
Salhi
B
B
Chevolleau
T
T
Cunge
G
G
Grampeix
H
H
Tortai
J-H
JH
Martin
F
F
Jalaguier
E
E
De Salvo
B
B