In situ thin film growth stresses during chemical ordering.
The in situ growth stress and postgrowth stress relaxation during the L1(0) chemical ordering of Fe0.54Pt0.46 thin films have been characterized. The compressive stress is reduced with an increase in order parameter. The postgrowth stress relaxation rate increased with the order parameter and is rationalized in terms of an increase in the interfacial energy contribution at the grain boundaries because of chemical order. Density functional theory calculations were performed to quantify possible diffusion pathways and binding energies for Fe and Pt that may mitigate surface migration.
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Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, Alabama 35487-0202, USA.
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Turner
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Thompson
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