title: Single-electron transport through single dopants in a dopant-rich environment.
abstract: We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.
authors.affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan. romtabe@rie.shizuoka.ac.jp
authors.forename: Michiharu
authors.initials: M
authors.lastname: Tabe
authors.forename: Daniel
authors.initials: D
authors.lastname: Moraru
authors.forename: Maciej
authors.initials: M
authors.lastname: Ligowski
authors.forename: Miftahul
authors.initials: M
authors.lastname: Anwar
authors.forename: Ryszard
authors.initials: R
authors.lastname: Jablonski
authors.forename: Yukinori
authors.initials: Y
authors.lastname: Ono
authors.forename: Takeshi
authors.initials: T
authors.lastname: Mizuno