High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage.
Fast, compact, and power-efficient silicon microcavity electro-optic modulators are expected to be critical components for chip-level optical interconnects. It is highly desirable that these modulators can be driven by voltage swings of 1 V or less to reduce power dissipation and make them compatible with voltage supply levels associated with current and future complementary metal-oxide-semiconductor technology nodes. Here, we present a silicon racetrack resonator modulator that achieves over 8 dB modulation depth at 12.5 Gbps with a 1 V swing. In addition, the use of a racetrack resonator geometry relaxes the tight lithography resolution requirements typically associated with microring resonators and enhances the ability to use common lithographic optical techniques for their fabrication.
Dong
Po
P
Kotura, Inc., 2630 Corporate Place, Monterey Park, California 91754, USA. pdong@kotura.com
Liao
Shirong
S
Liang
Hong
H
Qian
Wei
W
Wang
Xin
X
Shafiiha
Roshanak
R
Feng
Dazeng
D
Li
Guoliang
G
Zheng
Xuezhe
X
Krishnamoorthy
Ashok V
AV
Asghari
Mehdi
M