title: Fabrication of n- and p-type organic thin film transistors with minimized gate overlaps by self-aligned nanoimprinting.
authors.affiliation: Institute of Nanostructured Materials and Photonics, Weiz, Austria.
authors.forename: Ursula
authors.initials: U
authors.lastname: Palfinger
authors.forename: Christoph
authors.initials: C
authors.lastname: Auner
authors.forename: Herbert
authors.initials: H
authors.lastname: Gold
authors.forename: Anja
authors.initials: A
authors.lastname: Haase
authors.forename: Johanna
authors.initials: J
authors.lastname: Kraxner
authors.forename: Thomas
authors.initials: T
authors.lastname: Haber
authors.forename: Meltem
authors.initials: M
authors.lastname: Sezen
authors.forename: Werner
authors.initials: W
authors.lastname: Grogger
authors.forename: Gerhard
authors.initials: G
authors.lastname: Domann
authors.forename: Georg
authors.initials: G
authors.lastname: Jakopic
authors.forename: Joachim R
authors.initials: JR
authors.lastname: Krenn
authors.forename: Barbara
authors.initials: B
authors.lastname: Stadlober
mesh_terms: D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D014173:Transistors, Electronic