Quantum efficiency of a metal-oxide-semiconductor capacitor with a semitransparent chromium electrode for an ultraviolet light detector.
We have fabricated and tested an UV radiation detector by using a metal-oxide-semiconductor capacitor in the deep depletion mode with a semitransparent chromium electrode deposited on an oxidized silicon wafer. The quantum efficiency of the device is sensitive to the metal-layer thickness, since it absorbs part of the beam energy. Efficiency values of the order of 25-40% are obtained between 2 and 6 eV with a 10-nm chromium electrode. A model of the device efficiency is given, including effects of optical multiple reflection, electron-hole creation, and collecting yield.
Lévêque
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Peisner
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Sangaré
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