title: Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy.
abstract: Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.
authors.affiliation: Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany. timm@physik.tu-berlin.de
authors.forename: Rainer
authors.initials: R
authors.lastname: Timm
authors.forename: Holger
authors.initials: H
authors.lastname: Eisele
authors.forename: Andrea
authors.initials: A
authors.lastname: Lenz
authors.forename: Lena
authors.initials: L
authors.lastname: Ivanova
authors.forename: Vivien
authors.initials: V
authors.lastname: Vossebürger
authors.forename: Till
authors.initials: T
authors.lastname: Warming
authors.forename: Dieter
authors.initials: D
authors.lastname: Bimberg
authors.forename: Ian
authors.initials: I
authors.lastname: Farrer
authors.forename: David A
authors.initials: DA
authors.lastname: Ritchie
authors.forename: Mario
authors.initials: M
authors.lastname: Dähne