title: Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.
abstract: An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.
authors.affiliation: Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109.
authors.forename: L E
authors.initials: LE
authors.lastname: Antonuk
authors.forename: M
authors.initials: M
authors.lastname: Koniczek
authors.forename: J
authors.initials: J
authors.lastname: McDonald
authors.forename: Y
authors.initials: Y
authors.lastname: El-Mohri
authors.forename: Q
authors.initials: Q
authors.lastname: Zhao
authors.forename: M
authors.initials: M
authors.lastname: Behravan