Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy.
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.
Timm
Rainer
R
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany. timm@physik.tu-berlin.de
Eisele
Holger
H
Lenz
Andrea
A
Ivanova
Lena
L
Vossebürger
Vivien
V
Warming
Till
T
Bimberg
Dieter
D
Farrer
Ian
I
Ritchie
David A
DA
Dähne
Mario
M