title: Nearly massless electrons in the silicon interface with a metal film.
abstract: We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have a nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by a repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied to various other semiconductor devices.
authors.affiliation: Center for Atomic Wires and Layers, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: Keun Su
authors.initials: KS
authors.lastname: Kim
authors.forename: Sung Chul
authors.initials: SC
authors.lastname: Jung
authors.forename: Myung Ho
authors.initials: MH
authors.lastname: Kang
authors.forename: Han Woong
authors.initials: HW
authors.lastname: Yeom