12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.
Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
Sun
Lei
L
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
Qin
Guoxuan
G
Seo
Jung-Hun
JH
Celler
George K
GK
Zhou
Weidong
W
Ma
Zhenqiang
Z
D008567:Membranes, Artificial; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D012825:Silicon