title: Twinning-induced kinking of Sb-doped ZnO nanowires.
abstract: Sb-doped ZnO nanowires with kinking structures have been synthesized by a catalyst-free thermal evaporation method with the addition of Sb(2)O(3). Transmission electron microscopy (TEM) observations revealed that the kinks of the nanowires are induced by twinning structures. [0111], [0113] twins and heavy stacking faults in the (0001) plane were observed in these kinked nanowires. High-resolution TEM and energy dispersive x-ray spectroscopy showed that there exists an Sb-rich segregation layer in the twin boundaries of some nanowires. A formation mechanism of the kinked nanowires was proposed. The optical property of the synthesized nanowires was investigated by room-temperature photoluminescence.
authors.affiliation: Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, People's Republic of China.
authors.forename: Su
authors.initials: S
authors.lastname: Li
authors.forename: Xiaozhong
authors.initials: X
authors.lastname: Zhang
authors.forename: Lihuan
authors.initials: L
authors.lastname: Zhang
authors.forename: Min
authors.initials: M
authors.lastname: Gao