title: Theory of spin-dependent phonon-assisted optical transitions in silicon.
abstract: Silicon is an ideal material choice for spintronics devices due to its relatively long spin relaxation time and mature technology. To date, however, there are no parameter-free methods to accurately determine the degree of spin polarization of electrons in silicon. This missing link is established with a theory that provides concise relations between the degrees of spin polarization and measured circular polarization for each of the dominant phonon-assisted optical transitions. The phonon symmetries play a key role in elucidating recent spin injection experiments in silicon.
authors.affiliation: Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York, 14627, USA. pengke@ece.rochester.edu
authors.forename: Pengke
authors.initials: P
authors.lastname: Li
authors.forename: Hanan
authors.initials: H
authors.lastname: Dery