title: Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
abstract: GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO(2) layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.
authors.affiliation: Institute for Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.
authors.forename: Benedikt
authors.initials: B
authors.lastname: Bauer
authors.forename: Andreas
authors.initials: A
authors.lastname: Rudolph
authors.forename: Marcello
authors.initials: M
authors.lastname: Soda
authors.forename: Anna
authors.initials: A
authors.lastname: Fontcuberta i Morral
authors.forename: Josef
authors.initials: J
authors.lastname: Zweck
authors.forename: Dieter
authors.initials: D
authors.lastname: Schuh
authors.forename: Elisabeth
authors.initials: E
authors.lastname: Reiger