title: A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors.
abstract: Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 µm were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
authors.forename: Wei-Chen
authors.initials: WC
authors.lastname: Chen
authors.forename: Horng-Chih
authors.initials: HC
authors.lastname: Lin
authors.forename: Zer-Ming
authors.initials: ZM
authors.lastname: Lin
authors.forename: Chin-Tsai
authors.initials: CT
authors.lastname: Hsu
authors.forename: Tiao-Yuan
authors.initials: TY
authors.lastname: Huang