title: 12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.
abstract: Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
authors.affiliation: Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
authors.forename: Lei
authors.initials: L
authors.lastname: Sun
authors.forename: Guoxuan
authors.initials: G
authors.lastname: Qin
authors.forename: Jung-Hun
authors.initials: JH
authors.lastname: Seo
authors.forename: George K
authors.initials: GK
authors.lastname: Celler
authors.forename: Weidong
authors.initials: W
authors.lastname: Zhou
authors.forename: Zhenqiang
authors.initials: Z
authors.lastname: Ma
mesh_terms: D008567:Membranes, Artificial; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D012825:Silicon