Giant magnetoresistance in organic spin valves.
Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.
Sun
Dali
D
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Yin
Lifeng
L
Sun
Chengjun
C
Guo
Hangwen
H
Gai
Zheng
Z
Zhang
X-G
XG
Ward
T Z
TZ
Cheng
Zhaohua
Z
Shen
Jian
J