title: Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors.
authors.affiliation: Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Nagase
authors.forename: Takashi
authors.initials: T
authors.lastname: Hamada
authors.forename: Kenji
authors.initials: K
authors.lastname: Tomatsu
authors.forename: Saori
authors.initials: S
authors.lastname: Yamazaki
authors.forename: Takashi
authors.initials: T
authors.lastname: Kobayashi
authors.forename: Shuichi
authors.initials: S
authors.lastname: Murakami
authors.forename: Kimihiro
authors.initials: K
authors.lastname: Matsukawa
authors.forename: Hiroyoshi
authors.initials: H
authors.lastname: Naito
mesh_terms: D017097:Electric Impedance; D007287:Inorganic Chemicals / Q000737:chemistry*; D017646:Organosilicon Compounds / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry*; D012996:Solutions; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D007287:Inorganic Chemicals; D017646:Organosilicon Compounds; D011108:Polymers; D012996:Solutions; C532869:polymethylsilsesquioxane