Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering.
We investigate electric transport in graphene on SiO2 in the high field limit and report on the formation of p-n junctions. Previously, doping of graphene has been achieved by using multiple electrostatic gates, or charge transfer from adsorbants. Here we demonstrate a novel approach to create p-n junctions by changing the local electrostatic potential in the vicinity of one of the contacts without the use of extra gates. The approach is based on the electronic modification not of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled.
Chiu
Hsin-Ying
HY
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States. hchiu@us.ibm.com
Perebeinos
Vasili
V
Lin
Yu-Ming
YM
Avouris
Phaedon
P
D003198:Computer Simulation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012666:Semiconductors; D055672:Static Electricity
D006108:Graphite