title: Direct evidence for a reduced density of deep level defects at grain boundaries of Cu(In,Ga)Se2 thin films.
abstract: The unusual optoelectronic properties of chalcopyrite grain boundaries (GBs) have become the subject of an intense debate in recent years. In this work we investigate the defect density at GBs of Cu(In,Ga)Se2 by scanning tunneling spectroscopy. Contrary to our expectation, our results give evidence for a reduced density of deep level defects and point to an increased density of defect levels in resonance with the lower conduction band at GBs. Our findings imply low recombination activity at GBs, and thus can explain the low impact of GBs on the efficiency of chalcopyrite based solar cells.
authors.affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany. harry.monig@yale.edu
authors.forename: H
authors.initials: H
authors.lastname: Mönig
authors.forename: Y
authors.initials: Y
authors.lastname: Smith
authors.forename: R
authors.initials: R
authors.lastname: Caballero
authors.forename: C A
authors.initials: CA
authors.lastname: Kaufmann
authors.forename: I
authors.initials: I
authors.lastname: Lauermann
authors.forename: M Ch
authors.initials: MCh
authors.lastname: Lux-Steiner
authors.forename: S
authors.initials: S
authors.lastname: Sadewasser