Single-electron transport through single dopants in a dopant-rich environment.
We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.
Tabe
Michiharu
M
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan. romtabe@rie.shizuoka.ac.jp
Moraru
Daniel
D
Ligowski
Maciej
M
Anwar
Miftahul
M
Jablonski
Ryszard
R
Ono
Yukinori
Y
Mizuno
Takeshi
T