title: Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H.
abstract: The reversible hopping of a bistable atom on the Si(100)-(2×1):H surface is activated nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) scanning tunneling microscope. In the contact region, at short distances (<1.5  nm) between the hole injection site and the bistable atom, the hopping yield of the bistable atom exhibits remarkable variations as a function of the hole injection site. It is explained by the density of state distribution along the silicon bond network that shows charge-transfer pathways between the injection sites and the bistable atom.
authors.affiliation: Institut des Sciences Moléculaires d'Orsay, CNRS, Bâtiment 210, Université Paris Sud, 91405 Orsay, France.
authors.forename: A
authors.initials: A
authors.lastname: Bellec
authors.forename: D
authors.initials: D
authors.lastname: Riedel
authors.forename: G
authors.initials: G
authors.lastname: Dujardin
authors.forename: O
authors.initials: O
authors.lastname: Boudrioua
authors.forename: L
authors.initials: L
authors.lastname: Chaput
authors.forename: L
authors.initials: L
authors.lastname: Stauffer
authors.forename: Ph
authors.initials: P
authors.lastname: Sonnet