title: CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns.
abstract: A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al(2)O(3)) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al(2)O(3) nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.
authors.affiliation: CEA LETI MINATEC, Grenoble, France. guillaume.gay@cea.fr
authors.forename: G
authors.initials: G
authors.lastname: Gay
authors.forename: T
authors.initials: T
authors.lastname: Baron
authors.forename: C
authors.initials: C
authors.lastname: Agraffeil
authors.forename: B
authors.initials: B
authors.lastname: Salhi
authors.forename: T
authors.initials: T
authors.lastname: Chevolleau
authors.forename: G
authors.initials: G
authors.lastname: Cunge
authors.forename: H
authors.initials: H
authors.lastname: Grampeix
authors.forename: J-H
authors.initials: JH
authors.lastname: Tortai
authors.forename: F
authors.initials: F
authors.lastname: Martin
authors.forename: E
authors.initials: E
authors.lastname: Jalaguier
authors.forename: B
authors.initials: B
authors.lastname: De Salvo