Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H.
The reversible hopping of a bistable atom on the Si(100)-(2×1):H surface is activated nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) scanning tunneling microscope. In the contact region, at short distances (<1.5  nm) between the hole injection site and the bistable atom, the hopping yield of the bistable atom exhibits remarkable variations as a function of the hole injection site. It is explained by the density of state distribution along the silicon bond network that shows charge-transfer pathways between the injection sites and the bistable atom.
Bellec
A
A
Institut des Sciences Moléculaires d'Orsay, CNRS, Bâtiment 210, Université Paris Sud, 91405 Orsay, France.
Riedel
D
D
Dujardin
G
G
Boudrioua
O
O
Chaput
L
L
Stauffer
L
L
Sonnet
Ph
P