Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO(2) layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.
Bauer
Benedikt
B
Institute for Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.
Rudolph
Andreas
A
Soda
Marcello
M
Fontcuberta i Morral
Anna
A
Zweck
Josef
J
Schuh
Dieter
D
Reiger
Elisabeth
E