The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene.
Kalbac
Martin
M
J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic. kalbac@jh-inst.cas.cz
Reina-Cecco
Alfonso
A
Farhat
Hootan
H
Kong
Jing
J
Kavan
Ladislav
L
Dresselhaus
Mildred S
MS