title: The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene.
authors.affiliation: J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic. kalbac@jh-inst.cas.cz
authors.forename: Martin
authors.initials: M
authors.lastname: Kalbac
authors.forename: Alfonso
authors.initials: A
authors.lastname: Reina-Cecco
authors.forename: Hootan
authors.initials: H
authors.lastname: Farhat
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
authors.forename: Ladislav
authors.initials: L
authors.lastname: Kavan
authors.forename: Mildred S
authors.initials: MS
authors.lastname: Dresselhaus