title: Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe.
authors.affiliation: Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan. h-hirama@lucid.msl.titech.ac.jp
authors.forename: Hidenori
authors.initials: H
authors.lastname: Hiramatsu
authors.forename: Toshio
authors.initials: T
authors.lastname: Kamiya
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Tohei
authors.forename: Eiji
authors.initials: E
authors.lastname: Ikenaga
authors.forename: Teruyasu
authors.initials: T
authors.lastname: Mizoguchi
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Ikuhara
authors.forename: Keisuke
authors.initials: K
authors.lastname: Kobayashi
authors.forename: Hideo
authors.initials: H
authors.lastname: Hosono