Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe.
Hiramatsu
Hidenori
H
Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan. h-hirama@lucid.msl.titech.ac.jp
Kamiya
Toshio
T
Tohei
Tetsuya
T
Ikenaga
Eiji
E
Mizoguchi
Teruyasu
T
Ikuhara
Yuichi
Y
Kobayashi
Keisuke
K
Hosono
Hideo
H