Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si.
The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China. acceptor.ep89g@nctu.edu.tw
Ling
L
Lee
Wen-Chung
WC
Fan
Jui-Tai
JT
Ku
Wen-Hao
WH
Chang
Wei-Kuo
WK
Chen
Wu-Ching
WC
Chou
Chih-Hsin
CH
Ko
Cheng-Hsien
CH
Wu
You-Ru
YR
Lin
Clement H
CH
Wann
Chao-Wei
CW
Hsu
Yung-Feng
YF
Chen
Yan-Kuin
YK
Su