Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers.
Samsung Advanced Institute of Technology, Yongin, Korea.
Jae Chul
JC
Park
Sangwook
S
Kim
Sunil
S
Kim
Changjung
C
Kim
Ihun
I
Song
Youngsoo
Y
Park
U-In
UI
Jung
Dae Hwan
DH
Kim
Jang-Sik
JS
Lee
D006195:Hafnium / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D010087:Oxides / Q000737:chemistry*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry
D010087:Oxides; D007204:Indium; D015034:Zinc Oxide; D006195:Hafnium