Electric-field-induced resistive switching in a family of mott insulators: Towards a new class of RRAM memories.
Cario
Laurent
L
Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, France.
Vaju
Cristian
C
Corraze
Benoit
B
Guiot
Vincent
V
Janod
Etienne
E
D017097:Electric Impedance; D004581:Electronics / Q000191:economics / Q000295:instrumentation*; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry; D005857:Germanium / Q000737:chemistry; D008904:Miniaturization / Q000295:instrumentation; D009556:Niobium / Q000737:chemistry; D012643:Selenium / Q000737:chemistry; D013635:Tantalum / Q000737:chemistry
D005857:Germanium; D009556:Niobium; D013635:Tantalum; D005708:Gallium; D012643:Selenium