One-dimensional germanium nanostructures--formation and their electron field emission properties.
Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V µm(-1) and field enhancement factor of 1242.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
Hung-Chi
HC
Wu
Te-Chien
TC
Hou
Yu-Lun
YL
Chueh
Lih-Juann
LJ
Chen
Hsin-Tien
HT
Chiu
Chi-Young
CY
Lee