Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays.
Recently a prototype of complementary resistive switches has been proposed to solve the sneak-path problem in passive crossbar memory arrays. To further evaluate the potential of this novel cell structure for practical applications, we present a modeling analysis to capture its switching dynamics and analyze its unique read/write schemes. The model is corroborated by experimental data. We found a trade-off between the read voltage window and write voltage window. The constraint from avoiding disturbance on unselected cells is critical for proper functionality, which in turn limits the writing speed.
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. simonyu@stanford.edu
Shimeng
S
Yu
Jiale
J
Liang
Yi
Y
Wu
H-S Philip
HS
Wong