Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si.
The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.
Lee
Ling
L
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China. acceptor.ep89g@nctu.edu.tw
Fan
Wen-Chung
WC
Ku
Jui-Tai
JT
Chang
Wen-Hao
WH
Chen
Wei-Kuo
WK
Chou
Wu-Ching
WC
Ko
Chih-Hsin
CH
Wu
Cheng-Hsien
CH
Lin
You-Ru
YR
Wann
Clement H
CH
Hsu
Chao-Wei
CW
Chen
Yung-Feng
YF
Su
Yan-Kuin
YK