Resist free patterning of nonpreferential buffer layers for block copolymer lithography.
We report the design of a direct electron beam patternable buffer layer to spatially control the orientation of the microdomains in an overlaying polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) block copolymer (BCP) film. The buffer layer consists of a surface anchored low molecular weight PS-b-PMMA, with the PMMA segment anchored to the surface and a short PS block at the buffer layer/BCP interface. The block architecture of the buffer layer combines the essential features of "bottom up" and "top down" approaches as it functions as a nonpreferential layer to dictate perpendicular orientation of BCP domains from the substrate interface and as an e-beam resist to allow top-down lithographic process to spatially define the buffer layer on the substrate. The composition of the buffer layer can be tuned by changing the relative block lengths to create a nonpreferential surface which effectively induces perpendicular orientation of domains in an overlying BCP film. The grafted block copolymer can be locally shaved by e-beam lithography resulting in spatial control of domain orientation in the BCP film. The direct patterning approach reduces the number of steps involved in forming chemical patterns by conventional lithography.
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Eungnak
E
Han
Melvina
M
Leolukman
Myungwoong
M
Kim
Padma
P
Gopalan