Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.
A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.
Palit
Sabarni
S
Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina 27708, USA. sabarni.palit@duke.edu
Kirch
Jeremy
J
Huang
Mengyuan
M
Mawst
Luke
L
Jokerst
Nan Marie
NM
D001152:Arsenicals / Q000737:chemistry; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D007834:Lasers; D008027:Light; D055095:Optics and Photonics; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D012822:Silicon Dioxide; D005708:Gallium; D012825:Silicon