Topographic measurements of supersmooth dielectric films made with a mechanical profiler and a scanning force microscope.
The roughnesses of five supersmooth dielectric films of Si(3)N(4), TiO(2), HfO(2), Ta(2)O(5), and Al(2)O(3) prepared by an ion-beam-sputtering technique were measured with a commercial Talystep mechanical profiler and a sensitive Leica WYKO SPM30 scanning force microscope (SFM) to determine how much roughness the films added to the ∼1-Å-rms roughness fused-silica substrates on which they were deposited. In all cases the increase in roughness for the three-quarter-wave optical thickness films was a small fraction of an angstrom. SFM measurements showed that the topography of the Ta(2)O(5) and Al(2)O(3) films was less random than that of the other film materials and the substrates.
Bennett
J M
JM
Tehrani
M M
MM
Jahanmir
J
J
Podlesny
J C
JC
Balter
T L
TL