title: Creation of a two-dimensional electron gas at an oxide interface on silicon.
abstract: In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO(3)/SrTiO(3) (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO(3) bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Park
authors.forename: D F
authors.initials: DF
authors.lastname: Bogorin
authors.forename: C
authors.initials: C
authors.lastname: Cen
authors.forename: D A
authors.initials: DA
authors.lastname: Felker
authors.forename: Y
authors.initials: Y
authors.lastname: Zhang
authors.forename: C T
authors.initials: CT
authors.lastname: Nelson
authors.forename: C W
authors.initials: CW
authors.lastname: Bark
authors.forename: C M
authors.initials: CM
authors.lastname: Folkman
authors.forename: X Q
authors.initials: XQ
authors.lastname: Pan
authors.forename: M S
authors.initials: MS
authors.lastname: Rzchowski
authors.forename: J
authors.initials: J
authors.lastname: Levy
authors.forename: C B
authors.initials: CB
authors.lastname: Eom