Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostructures.
Zhang
Jihua
J
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. jhzhang@uestc.edu.cn
Zeng
Huizhong
H
Zhang
Min
M
Liu
Wei
W
Zhou
Zuofan
Z
Chen
Hongwei
H
Yang
Chuanren
C
Zhang
Wanli
W
Li
Yanrong
Y