title: Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostructures.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. jhzhang@uestc.edu.cn
authors.forename: Jihua
authors.initials: J
authors.lastname: Zhang
authors.forename: Huizhong
authors.initials: H
authors.lastname: Zeng
authors.forename: Min
authors.initials: M
authors.lastname: Zhang
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.forename: Zuofan
authors.initials: Z
authors.lastname: Zhou
authors.forename: Hongwei
authors.initials: H
authors.lastname: Chen
authors.forename: Chuanren
authors.initials: C
authors.lastname: Yang
authors.forename: Wanli
authors.initials: W
authors.lastname: Zhang
authors.forename: Yanrong
authors.initials: Y
authors.lastname: Li