Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide.
Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China.
Haohai
H
Yu
Xiufang
X
Chen
Huaijin
H
Zhang
Xiangang
X
Xu
Xiaobo
X
Hu
Zhengping
Z
Wang
Jiyang
J
Wang
Shidong
S
Zhuang
Minhua
M
Jiang