Electronic junction control in a nanotube-semiconductor Schottky junction solar cell.
We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation) devices exhibit ∼8.5% power conversion efficiency (PCE). With active modulation the PCE is continuously and reversibly changed from 4 to 11%.
Department of Physics.
Pooja
P
Wadhwa
Bo
B
Liu
Mitchell A
MA
McCarthy
Zhuangchun
Z
Wu
Andrew G
AG
Rinzler