Measurements of the photocurrent enhancement of reverse-biased silicon photodiodes in the 0.05-1.5-keV photon-energy range.
The measured photocurrents from two different p-n-junction silicon photodiodes at 170-Å (73-eV) and at 8.34-Å (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low resistivity silicon (70-100 Ω cm), and the other is fabricated on high-resistivity silicon (> 2 × 10(4) Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 Å and 12.5 ± 2 at 170 Å.
M J
MJ
May
M
M
Finkenthal
S P
SP
Regan
H W
HW
Moos
K W
KW
Wenzel