Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process.
P-type thermoelectric bismuth telluride nanowires were fabricated by pulsed electrodeposition in anodic aluminium oxide (AAO) membranes. Subsequently, the nanowires were annealed at 423, 523 and 673 K in an inert atmosphere for 4 h. With increasing temperature, it was observed that the Te compound incongruently sublimates due to its high vapor pressure, leading to disproportionation (from Bi(2)Te(3) to Bi(4)Te(3)via Bi(4)Te(5)). The crystalline structure of the nanowires was then investigated using XRD and SAED, with nanowire compositions investigated using an EDX attached to a TEM. The crystallinity of the nanowires was found to be enhanced with increased annealing temperature, and nanowires annealed at 673 K were stably maintained in the Bi(4)Te(3) phase. Additionally, the Seebeck coefficient was determined and the thermopower of nanowires annealed at a temperature of 423 K was shown to be slightly enhanced. Significantly suppressed Seebeck values for annealing temperatures of 523 K and 673 K were also observed.
Ertl Center for Electrochemistry and Catalysis, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
Jongmin
J
Lee
Andreas
A
Berger
Laurent
L
Cagnon
Ulrich
U
Gösele
Kornelius
K
Nielsch
Jaeyoung
J
Lee