Orientation-controlled alignment of axially modulated pn silicon nanowires.
We demonstrate orientation-controlled alignment of axially modulated pn SiNWs by applying dc electric fields across metal electrodes. The as-aligned pn SiNWs exhibit rectifying behaviors with a 97.7% yield, and about 35% of them exhibit no hysteresis in their current-voltage curves that can be directly used to construct AND/OR logic gates. Moreover, the as-aligned pn SiNWs can be packaged either with polydimethylsiloxane or additional metal layer to protect and even improve the quality of these NW diodes.
Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States.
Chi Hwan
CH
Lee
Dong Rip
DR
Kim
Xiaolin
X
Zheng