Degradation pattern of SnO(2) nanowire field effect transistors.
The degradation pattern of SnO(2) nanowire field effect transistors (FETs) was investigated by using an individual SnO(2) nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al(2)O(3) layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R(s)-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.
School of Electrical Engineering, Korea University, Seoul 136-701, Korea.
Junhong
J
Na
Junghwan
J
Huh
Sung Chan
SC
Park
Daeil
D
Kim
Dong Wook
DW
Kim
Jae Woo
JW
Lee
In-Sung
IS
Hwang
Jong-Heun
JH
Lee
Jeong Sook
JS
Ha
Gyu Tae
GT
Kim