title: The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process.
abstract: Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and -94 μV/K for n-leg. The maximum attainable power factor is 0.74 mW/m K(2) at room temperature.
authors.forename: Moongyu
authors.initials: M
authors.lastname: Jang
authors.forename: Youngsam
authors.initials: Y
authors.lastname: Park
authors.forename: Myungsim
authors.initials: M
authors.lastname: Jun
authors.forename: Younghoon
authors.initials: Y
authors.lastname: Hyun
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Choi
authors.forename: Taehyoung
authors.initials: T
authors.lastname: Zyung