title: Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy.
abstract: We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
authors.forename: S
authors.initials: S
authors.lastname: Bietti
authors.forename: C
authors.initials: C
authors.lastname: Somaschini
authors.forename: E
authors.initials: E
authors.lastname: Sarti
authors.forename: N
authors.initials: N
authors.lastname: Koguchi
authors.forename: S
authors.initials: S
authors.lastname: Sanguinetti
authors.forename: G
authors.initials: G
authors.lastname: Isella
authors.forename: D
authors.initials: D
authors.lastname: Chrastina
authors.forename: A
authors.initials: A
authors.lastname: Fedorov