title: Infrared ellipsometry investigation of SiO(x)N(y) thin films on silicon.
abstract: The dielectric function ˜ε (˜ε = ε(1) + iε(2)) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm(-1). The phase-separation model is unable to reproduce the experimental data. The dependence of ˜ε on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO(4-j)N(j) (j = 0-4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen.
authors.forename: A
authors.initials: A
authors.lastname: Brunet-Bruneau
authors.forename: G
authors.initials: G
authors.lastname: Vuye
authors.forename: J M
authors.initials: JM
authors.lastname: Frigerio
authors.forename: F
authors.initials: F
authors.lastname: Abelνs
authors.forename: J
authors.initials: J
authors.lastname: Rivory
authors.forename: M
authors.initials: M
authors.lastname: Berger
authors.forename: P
authors.initials: P
authors.lastname: Chaton