title: Epitaxial Nd-doped α-(Al(1-x)Ga(x))2O3 films on sapphire for solid-state waveguide lasers.
abstract: Single-crystal aluminum-gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al(1-x)Ga(x))(2)O(3) alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 1090-1096 nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga-Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces.
authors.affiliation: Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada. raveen@phas.ubc.ca
authors.forename: Raveen
authors.initials: R
authors.lastname: Kumaran
authors.forename: Thomas
authors.initials: T
authors.lastname: Tiedje
authors.forename: Scott E
authors.initials: SE
authors.lastname: Webster
authors.forename: Shawn
authors.initials: S
authors.lastname: Penson
authors.forename: Wei
authors.initials: W
authors.lastname: Li