title: Calculation of integrated intensities in aberration-corrected Z-contrast images.
abstract: Inclusion of spatial incoherence has been shown to give quantitative agreement between non-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy images and theoretical simulations. Here we show that, using the same approach, a significant improvement in the correlation between calculated and experimental normalized integrated intensities is obtained in the InAsP ternary semiconductor alloy, but residual discrepancies remain. We have demonstrated, in good agreement with experimental intensities obtained in calibrated samples, that normalized integrated intensities show a low dependence on the sample thickness over a wide range of thickness values. This behaviour does not occur in conventional (non-aberration-corrected) images and constitutes a powerful tool for straightforward interpretation of high-resolution images in terms of atomic column-resolved compositional maps.
authors.affiliation: Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain. sergio.molina@uca.es
authors.forename: Sergio I
authors.initials: SI
authors.lastname: Molina
authors.forename: Maria P
authors.initials: MP
authors.lastname: Guerrero
authors.forename: Pedro L
authors.initials: PL
authors.lastname: Galindo
authors.forename: David L
authors.initials: DL
authors.lastname: Sales
authors.forename: Maria
authors.initials: M
authors.lastname: Varela
authors.forename: Stephen J
authors.initials: SJ
authors.lastname: Pennycook
mesh_terms: D000497:Alloys / Q000737:chemistry; D003198:Computer Simulation; D017348:Microscopy, Electron, Scanning Transmission / Q000379:methods*; D012666:Semiconductors / Q000295:instrumentation*; D012984:Software
chemical_list: D000497:Alloys