Charge storage variations of organic memory devices fabricated by using C60 molecules embedded in an insulating polymer layer with Au and Al electrodes.
Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing Buckminster-fullerene (C60) were formed by using a spin coating method. Capacitance-voltage measurements on Al/C60 embedded in PVP layer/p-Si (100) devices at 300 K showed a hysteresis with a large flatband voltage shift due to the existence of C60 molecules, indicative of the charge storage in the C60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C60 was significantly affected by the type of electrode. The endurance time of the organic memory device fabricated utilizing C60 nanoparticles embedded in the PVP layer at 300 K was approximately 10 years, indicative of excellent memory endurance ability.
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea.
Sung Hwan
SH
Cho
Jae Hun
JH
Jung
Jung Hoon
JH
Ham
Dea Uk
DU
Lee
Tae Whan
TW
Kim