High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors.
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10(-6)).
Chang-Young
CY
Choi
Ji-Hoon
JH
Lee
Jung-Hyuk
JH
Koh
Jae-Geun
JG
Ha
Sang-Mo
SM
Koo
Sangsig
S
Kim