Resistive switching memory: observations with scanning probe microscopy.
Recent advances in information technology require higher-speed and higher-density memory devices. In the past decade, resistance switching memory has emerged as a powerful alternative to existing charge-storage-based, non-volatile devices. Despite the extensive research, much of the underlying switching/conduction mechanism is still unknown and controversial. The versatile capability of scanning probe microscopy (SPM) has extended the understanding of resistive switching significantly. This review summarizes the recent advances in understanding on the mechanism of resistive switching effects with particular focus on SPM based observations. In addition, the tip-sample interfacial effects and resulting possible artefacts during scanning probe measurements are discussed.
Department of Materials Science and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
Min Hwan
MH
Lee
Cheol Seong
CS
Hwang
D018011:Chalcogens / Q000737:chemistry; D055664:Electrochemical Techniques; D020527:Microscopy, Scanning Probe; D036103:Nanotechnology
D018011:Chalcogens