Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe.
We have proposed an illumination-collection-type scanning near-field Raman spectroscopy (SNRS) with a completely gold metal-inside-coated (MIC) pyramidal probe without an optical aperture in order to detect the Raman spectra of fine Si devices for local stress measurements. The gold MIC pyramidal probe has been studied to act as a plasmon resonance near-field optical probe with high power using a finite differential time domain (FDTD) simulation and the prototyped SNRS. In the simulation, the propagated optical power can be made available for SNRS. In the experiments, it is clear that the prototyped SNRS enhanced the Si Raman peak signal by plasmon resonance and could measure the Si Raman peak shift by line scanning the Si gate region and the Si active layer. Furthermore, compressive and tensile stresses localized around the Si gate were demonstrated by the Si Raman peak shift with a resolution of about 10 nm. It is clarified that the proposed SNRS has the possibility of detecting the Raman spectra of a local area.
Graduate School of Engineering, Gunma University, Kiryu, Japan. hosaka@el.gunma-u.ac.jp
Sumio
S
Hosaka
Yusuke
Y
Aramomi
Hayato
H
Sone
You
Y
Yin
Eiji
E
Sato
Kenji
K
Tochigi