Label-free biosensors based on aptamer-modified graphene field-effect transistors.
A label-free immunosensor based on an aptamer-modified graphene field-effect transistor (G-FET) is demonstrated. Immunoglobulin E (IgE) aptamers with an approximate height of 3 nm were successfully immobilized on a graphene surface, as confirmed by atomic force microscopy. The aptamer-modified G-FET showed selective electrical detection of IgE protein. From the dependence of the drain current variation on the IgE concentration, the dissociation constant was estimated to be 47 nM, indicating good affinity and the potential for G-FETs to be used in biological sensors.
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan. ohno@sanken.osaka-u.ac.jp
Yasuhide
Y
Ohno
Kenzo
K
Maehashi
Kazuhiko
K
Matsumoto
D052157:Aptamers, Nucleotide / Q000737:chemistry*; D015374:Biosensing Techniques; D006108:Graphite / Q000737:chemistry*; D007073:Immunoglobulin E / Q000032:analysis*; D018625:Microscopy, Atomic Force; D014173:Transistors, Electronic
D052157:Aptamers, Nucleotide; D007073:Immunoglobulin E; D006108:Graphite