Stress dependent band gap shift and valence band studies in ZnO nanorods.
ZnO nanorods are grown on seedless and ZnO seeded glass substrates using chemical solution method and their structural, morphological, optical and valence band studies have been carried out. On seedless substrate horizontal nanorods are observed whereas for the seeded substrates vertically aligned hollow and solid nanorods grows. X-ray diffraction analysis revealed the presence of tensile stress in the vertical nanorods. Blue shift has been observed in the band gap of the vertical nanorods as compared to the horizontal nanorods which is attributed to the presence of tensile stress in the vertically aligned nanorods. Photoluminescence spectra revealed the dominance of Zinc vacancies (V(Zn)) related defects in the nanorods and oxygen defects are found to be higher in the vertically aligned nanorods as compared to the horizontal nanorods. The difference between the Fermi level and valence band maxima for horizontal, hollow vertical and solid vertical nanorods are found to be approximately 0.56 eV, approximately 0.70 eV and approximately 0.92 eV respectively indicating the possibility of p-type of conduction in the nanorods which has been attributed to presence of V(Zn) defects in the ZnO nanorods.
Department of Physics, Indian Institute of Technology Delhi, New Dehi 110016, India.
Bhupendra K
BK
Sharma
Neeraj
N
Khare
Mahesh
M
Kumar