Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.
In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.
Semiconductor Device Research Laboratory (Nanotec Center of Excellent), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Phayathai Road, Pathumwan, Bangkok 10330, Thailand.
Wipakorn
W
Jevasuwan
Poonyasiri
P
Boonpeng
Somsak
S
Panyakeow
Somchai
S
Ratanathammaphan