Morphological impact of zinc oxide layers on the device performance in thin-film transistors.
Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.
Organic Materials & Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstraße 07, 91058, Erlangen, Germany. hendrik.faber@ww.uni-erlangen.de
Hendrik
H
Faber
Martin
M
Klaumünzer
Michael
M
Voigt
Diana
D
Galli
Benito F
BF
Vieweg
Wolfgang
W
Peukert
Erdmann
E
Spiecker
Marcus
M
Halik
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide