Universal segregation growth approach to wafer-size graphene from non-noble metals.
Graphene has been attracting wide interests owing to its excellent electronic, thermal, and mechanical performances. Despite the availability of several production techniques, it is still a great challenge to achieve wafer-size graphene with acceptable uniformity and low cost, which would determine the future of graphene electronics. Here we report a universal segregation growth technique for batch production of high-quality wafer-scale graphene from non-noble metal films. Without any extraneous carbon sources, 4 in. graphene wafers have been obtained from Ni, Co, Cu-Ni alloy, and so forth via thermal annealing with over 82% being 1-3 layers and excellent reproducibility. We demonstrate the first example of monolayer and bilayer graphene wafers using Cu-Ni alloy by combining the distinct segregation behaviors of Cu and Ni. Together with the easy detachment from growth substrates, we believe this facile segregation technique will offer a great driving force for graphene research.
Center for Nanochemistry(CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China.
Nan
N
Liu
Lei
L
Fu
Boya
B
Dai
Kai
K
Yan
Xun
X
Liu
Ruiqi
R
Zhao
Yanfeng
Y
Zhang
Zhongfan
Z
Liu