Electrical bistabilities and memory mechanisms of organic bistable devices fabricated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) layer.
Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (I-V) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles. Current-time (I-t) results showed the memory retention characteristic of the device. Carrier transport mechanisms of the device are described on the basis of the I-V experimental results and electronic structures.
Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Republic of Korea.
Jin Ku
JK
Kwak
Dong Yeol
DY
Yun
Dong Ick
DI
Son
Jae Hun
JH
Jung
Dea Uk
DU
Lee
Tae Whan
TW
Kim