Photoluminescence properties of non-tapered InN nanorods grown by plasma-assisted metalorganic chemical vapor phase deposition.
We have successfully grown non-tapered InN nanorods on Si substrate using an RF plasma assisted metalorganic chemical vapor deposition technique. Employment of 50 W nitrogen plasma reduces the optimal growth temperature to 500 degrees C. In order to study the temperature dependent bandgap and thermal quenching mechanism in relation to the localized states, photoluminescence measurement over a temperature range from 7 to 160 K are conducted. The photoluminescence at 7 K shows a strong near-band-emission energy of 0.682 eV with a narrow band width of 0.027 eV, which reveals excellent optical and structural qualities of the InN nanorods.
Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA.
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Seo
Dever P
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Norman
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Yuan
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Tu
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Chiang