Modeling of self-assembled GeSi nano-dots and corresponding admittance spectroscopy.
We examine two techniques to determine experimentally and theoretically the strength of quantum confinement in SiGe nano-dots. A simple theory for admittance spectroscopy in a quantum dot is developed in conjunction with our experiments and experimental findings. Using a mass-balance equation approach based on the Boltzmann equation in which the hole-phonon interaction in a SiGe nano-dot is considered, we can successfully reproduce those observed experimentally in the admittance spectroscopy measurements. Thus, we are able to understand the interesting features of the electronic properties in SiGe nano-dots, especially the dependence of the quantum confinement on the size of the dots.
Surface Physics Laboratory, Fudan University, Shanghai 200433, PR China.
Xi
X
Li
Wen
W
Xu
Shihai
S
Cao
Qijia
Q
Cai
Fang
F
Lu