Growth of Zn(1_x)Mg(x)O and Zn(1_x)Cd(x)O nanowires and the application in light emitting devices.
Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn(1-x)Cd(x)O nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yields a strong emission peak at 553 nm from the Zn(1-x)Cd(x)O nanowire.
School of Metallurgy Science and Engineering, Central South University, Changsha 410083, China.
Guang
G
Chu
Zhiqun
Z
Xiong
Shijia
S
Zhao