title: Controlled growth of ordered nanopore arrays in GaN.
abstract: High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
authors.forename: Isaac H
authors.initials: IH
authors.lastname: Wildeson
authors.forename: David A
authors.initials: DA
authors.lastname: Ewoldt
authors.forename: Robert
authors.initials: R
authors.lastname: Colby
authors.forename: Eric A
authors.initials: EA
authors.lastname: Stach
authors.forename: Timothy D
authors.initials: TD
authors.lastname: Sands
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D016062:Porosity; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; C473348:gallium nitride; D005708:Gallium