title: A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product.
abstract: We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.
authors.affiliation: Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul, 120-749, Korea.
authors.forename: Myung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Woo-Young
authors.initials: WY
authors.lastname: Choi