title: Complementary metal-oxide semiconductor (CMOS) image sensor: an insight as a point-of-care label-free immunosensor.
abstract: The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions.
authors.affiliation: College of Bionanotechnology, Kyungwon University, Seongnam si, Gyeonggi do, Republic of Korea.
authors.forename: Karthikeyan
authors.initials: K
authors.lastname: Kandasamy
authors.forename: Mohana
authors.initials: M
authors.lastname: Marimuthu
authors.forename: Gun Yong
authors.initials: GY
authors.lastname: Sung
authors.forename: Chang Geun
authors.initials: CG
authors.lastname: Ahn
authors.forename: Sanghyo
authors.initials: S
authors.lastname: Kim
mesh_terms: D000937:Antigen-Antibody Reactions; D003952:Diagnostic Imaging / Q000379:methods*; D006801:Humans; D007159:Immunologic Tests / Q000295:instrumentation / Q000379:methods*; D007204:Indium; D057230:Limit of Detection; D008670:Metals; D053758:Nanoparticles; D010087:Oxides; D017785:Photons; D019095:Point-of-Care Systems; D012542:Scattering, Radiation; D012666:Semiconductors
chemical_list: D008670:Metals; D010087:Oxides; D007204:Indium