title: InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process.
abstract: InGaN-based light-emitting solar cell (LESC) structure with an inverted pyramidal structure at GaN/sapphire interface was fabricated through a laser decomposition process and a wet crystallographic etching process. The highest light output power of the laser-treated LESC structure, with a 56% backside roughened-area ratio, had a 75% enhancement compared to the conventional device at a 20 mA operating current. By increasing the backside roughened area, the cutoff wavelength of the transmittance spectra and the wavelength of the peak photovoltaic efficiency had a redshift phenomenon that could be caused by increasing the light absorption at InGaN active layer.
authors.affiliation: Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan.
authors.forename: Kuei-Ting
authors.initials: KT
authors.lastname: Chen
authors.forename: Wan-Chun
authors.initials: WC
authors.lastname: Huang
authors.forename: Tsung-Han
authors.initials: TH
authors.lastname: Hsieh
authors.forename: Chang-Hua
authors.initials: CH
authors.lastname: Hsieh
authors.forename: Chia-Feng
authors.initials: CF
authors.lastname: Lin