title: Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy.
abstract: We use a combination of a scattering-type near-field infrared microscope with a free-electron laser as an intense, tunable radiation source to spatially and spectrally resolve buried doped layers in silicon. To this end, boron implanted stripes in silicon are raster scanned at different wavelengths in the range from 10 to 14 µm. An analysis based on a simple Drude model for the dielectric function of the sample yields quantitatively correct values for the concentration of the activated carriers. In a control experiment at the fixed wavelength of 10.6 µm, interferometric near-field signals are recorded. The phase information gained in this experiment is fully consistent with the carrier concentration obtained in the spectrally resolved experiments.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PO Box 51 01 19, 01314 Dresden, Germany. r.jacob@fzd.de
authors.forename: Rainer
authors.initials: R
authors.lastname: Jacob
authors.forename: Stephan
authors.initials: S
authors.lastname: Winnerl
authors.forename: Harald
authors.initials: H
authors.lastname: Schneider
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.forename: Marc Tobias
authors.initials: MT
authors.lastname: Wenzel
authors.forename: Hans-Georg
authors.initials: HG
authors.lastname: von Ribbeck
authors.forename: Lukas M
authors.initials: LM
authors.lastname: Eng
authors.forename: Susanne C
authors.initials: SC
authors.lastname: Kehr
mesh_terms: D000465:Algorithms; D007477:Ions; D008422:Materials Testing / Q000379:methods; D012825:Silicon / Q000737:chemistry*; D013055:Spectrophotometry, Infrared / Q000379:methods*; D055672:Static Electricity
chemical_list: D007477:Ions; D012825:Silicon