title: Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm.
abstract: We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95 μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb/GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2 MHz. The laser produced pulses with 30 pJ energy and a duration of 1.1 ps within a factor of 2 of the Fourier limit.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. antti.harkonen@tut.fi
authors.forename: Antti
authors.initials: A
authors.lastname: Härkönen
authors.forename: Jonna
authors.initials: J
authors.lastname: Paajaste
authors.forename: Soile
authors.initials: S
authors.lastname: Suomalainen
authors.forename: Jukka-Pekka
authors.initials: JP
authors.lastname: Alanko
authors.forename: Christian
authors.initials: C
authors.lastname: Grebing
authors.forename: Riku
authors.initials: R
authors.lastname: Koskinen
authors.forename: Günter
authors.initials: G
authors.lastname: Steinmeyer
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina