title: Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).
abstract: Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D(2)-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.
authors.forename: Shunsuke
authors.initials: S
authors.lastname: Abe
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Handa
authors.forename: Ryota
authors.initials: R
authors.lastname: Takahashi
authors.forename: Kei
authors.initials: K
authors.lastname: Imaizumi
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Fukidome
authors.forename: Maki
authors.initials: M
authors.lastname: Suemitsu