title: Structure and elemental distribution of (Ga,Mn)N nanowires.
abstract: (Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply.
authors.affiliation: IV Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen, Germany. urban@ph4.physik.uni-goettingen.de
authors.forename: A
authors.initials: A
authors.lastname: Urban
authors.forename: J
authors.initials: J
authors.lastname: Malindretos
authors.forename: M
authors.initials: M
authors.lastname: Seibt
authors.forename: A
authors.initials: A
authors.lastname: Rizzi
mesh_terms: D003460:Crystallization / Q000379:methods; D005708:Gallium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D009584:Nitrogen / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D008345:Manganese; D005708:Gallium; D009584:Nitrogen