title: Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy.
abstract: WE PRESENT THE MOLECULAR BEAM EPITAXY FABRICATION AND OPTICAL PROPERTIES OF COMPLEX GAAS NANOSTRUCTURES BY DROPLET EPITAXY: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.
authors.forename: C
authors.initials: C
authors.lastname: Somaschini
authors.forename: S
authors.initials: S
authors.lastname: Bietti
authors.forename: A
authors.initials: A
authors.lastname: Fedorov
authors.forename: N
authors.initials: N
authors.lastname: Koguchi
authors.forename: S
authors.initials: S
authors.lastname: Sanguinetti