title: 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON.
abstract: We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER.
authors.affiliation: Photonic/Wireless Convergence Components Department, ETRI, 161 Gajeong-dong, Yuseong, Daejeon 305-700, Korea. kimhyunsoo@etri.re.kr
authors.forename: Hyun-Soo
authors.initials: HS
authors.lastname: Kim
authors.forename: Dong Churl
authors.initials: DC
authors.lastname: Kim
authors.forename: Ki-Soo
authors.initials: KS
authors.lastname: Kim
authors.forename: Byung-Seok
authors.initials: BS
authors.lastname: Choi
authors.forename: O-Kyun
authors.initials: OK
authors.lastname: Kwon