title: 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.
abstract: We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, 33720 Finland.
authors.forename: Ville-Markus
authors.initials: VM
authors.lastname: Korpijärvi
authors.forename: Tomi
authors.initials: T
authors.lastname: Leinonen
authors.forename: Janne
authors.initials: J
authors.lastname: Puustinen
authors.forename: Antti
authors.initials: A
authors.lastname: Härkönen
authors.forename: Mircea D
authors.initials: MD
authors.lastname: Guina
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D054023:Lasers, Semiconductor
chemical_list: D001152:Arsenicals; C473348:gallium nitride; C043055:gallium arsenide; D005708:Gallium