title: The fabrication of large-area, free-standing GaN by a novel nanoetching process.
abstract: A simple yet versatile nanoetching process in porosifying and 'machining' GaN is reported in this work. By combining different porosifying conditions through potentiostatic modulation or embedding doping design, we are able to separate and lift off GaN layers over a macroscopic area (≥cm(2)). Strain relaxation and single crystallinity are confirmed by Raman and transmission electron microscopy, respectively. This method is expected to open up a new dimension in epitaxy, design and manufacture of GaN heterostructures and devices.
authors.affiliation: School of Physics, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Qian
authors.initials: Q
authors.lastname: Sun
authors.forename: Benjamin
authors.initials: B
authors.lastname: Leung
authors.forename: John
authors.initials: J
authors.lastname: Simon
authors.forename: Minjoo Larry
authors.initials: ML
authors.lastname: Lee
authors.forename: Jung
authors.initials: J
authors.lastname: Han