title: Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation.
abstract: In this work, we demonstrate an approach to tune the electrical behavior of our Ω-gated germanium-nanowire (Ge-NW) MOSFETs by focused ion beam (FIB) implantation. For the MOSFETs, 35 nm thick Ge-NWs are covered by atomic layer deposition (ALD) of a high-κ gate dielectric. With the Ω-shaped metal gate acting as implantation mask, highly doped source/drain (S/D) contacts are formed in a self-aligned process by FIB implantation. Notably, without any dopant activation by annealing, the devices exhibit more than three orders of magnitude higher I(ON) currents, an improved I(ON)/I(OFF) ratio, a higher mobility and a reduced subthreshold slope of 140 mV/decade compared to identical Ge-NW MOSFETs without FIB implantation.
authors.affiliation: Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria.
authors.forename: T
authors.initials: T
authors.lastname: Burchhart
authors.forename: C
authors.initials: C
authors.lastname: Zeiner
authors.forename: A
authors.initials: A
authors.lastname: Lugstein
authors.forename: C
authors.initials: C
authors.lastname: Henkel
authors.forename: E
authors.initials: E
authors.lastname: Bertagnolli