title: Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
abstract: Quest for photo-stable amorphous thin films in ternary Ge(x)As(y)Se(100-x-y) chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge(20)As(20)Se(60) composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.
authors.affiliation: Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic.
authors.forename: P
authors.initials: P
authors.lastname: Němec
authors.forename: S
authors.initials: S
authors.lastname: Zhang
authors.forename: V
authors.initials: V
authors.lastname: Nazabal
authors.forename: K
authors.initials: K
authors.lastname: Fedus
authors.forename: G
authors.initials: G
authors.lastname: Boudebs
authors.forename: A
authors.initials: A
authors.lastname: Moreac
authors.forename: M
authors.initials: M
authors.lastname: Cathelinaud
authors.forename: X-H
authors.initials: XH
authors.lastname: Zhang