title: Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.
abstract: The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe, as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands as a function of the Ge coverage has been studied by coupling atomic force microscopy scans with Auger spectro-microscopy data. Our observations are consistent with a physical scenario where island positioning is essentially driven by energetic factors, which predominate with respect to the local kinetics of diffusion, and the growth evolution mainly depends on the local density of Ge atoms.
authors.forename: Giovanni Maria
authors.initials: GM
authors.lastname: Vanacore
authors.forename: Maurizio
authors.initials: M
authors.lastname: Zani
authors.forename: Monica
authors.initials: M
authors.lastname: Bollani
authors.forename: Davide
authors.initials: D
authors.lastname: Colombo
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.forename: Johann
authors.initials: J
authors.lastname: Osmond
authors.forename: Roman
authors.initials: R
authors.lastname: Sordan
authors.forename: Alberto
authors.initials: A
authors.lastname: Tagliaferri