title: Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.
abstract: We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.
authors.affiliation: Department of Chemical & Biological Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Byung-Jae
authors.initials: BJ
authors.lastname: Kim
authors.forename: Michael A
authors.initials: MA
authors.lastname: Mastro
authors.forename: Jennifer
authors.initials: J
authors.lastname: Hite
authors.forename: Charles R
authors.initials: CR
authors.lastname: Eddy
authors.forename: Jihyun
authors.initials: J
authors.lastname: Kim
mesh_terms: D004553:Electric Conductivity; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D055096:Optical Devices; D014466:Ultraviolet Rays
chemical_list: D006108:Graphite; D005708:Gallium; C027235:gallium nitrate