title: Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.
abstract: Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan.
authors.forename: Tzu-Chun
authors.initials: TC
authors.lastname: Lu
authors.forename: Min-Yung
authors.initials: MY
authors.lastname: Ke
authors.forename: Sheng-Chieh
authors.initials: SC
authors.lastname: Yang
authors.forename: Yun-Wei
authors.initials: YW
authors.lastname: Cheng
authors.forename: Liang-Yi
authors.initials: LY
authors.lastname: Chen
authors.forename: Guan-Jhong
authors.initials: GJ
authors.lastname: Lin
authors.forename: Yu-Hsin
authors.initials: YH
authors.lastname: Lu
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: JianJang
authors.initials: J
authors.lastname: Huang