title: Rectangular patterns using block copolymer directed assembly for high bit aspect ratio patterned media.
abstract: We report a nanofabrication method that combines block copolymer directed assembly with e-beam lithography to achieve highly uniform rectangular patterns with a critical dimension of 16 nm, a full pitch of 27 nm, and arbitrary aspect ratio. This fabrication method enables geometries that are not natural to block copolymer assembly, preserves both the feature uniformity and the center-to-center spacing of the original block copolymer, sustains long-range translational order, and facilitates high-resolution, high-density patterns through feature density multiplication. These highly uniform arrays of dense rectangular features are particularly attractive for fabricating magnetic bit patterned media with high bit aspect ratio.
authors.affiliation: San Jose Research Center, Hitachi Global Storage Technologies, San Jose, California 95135, United States. ricardo.ruiz@hitachigst.com
authors.forename: Ricardo
authors.initials: R
authors.lastname: Ruiz
authors.forename: Elizabeth
authors.initials: E
authors.lastname: Dobisz
authors.forename: Thomas R
authors.initials: TR
authors.lastname: Albrecht