title: Optimized conditions for imaging the effects of bonding charge density in electron microscopy.
abstract: We report on the observability of valence bonding effects in aberration-corrected high resolution electron microscopy (HREM) images along the [010] projection of the mineral Forsterite (Mg₂SiO₄). We have also performed exit wave restorations using simulated noisy images and have determined that both the intensities of individual images and the modulus of the restored complex exit wave are most sensitive to bonding effects at a level of 25% for moderately thick samples of 20-25 nm. This relatively large thickness is due to dynamical amplification of bonding contrast arising from partial de-channeling of 1s states. Simulations also suggest that bonding contrast is similarly high for an un-corrected conventional electron microscope, implying an experimental limitation of signal to noise ratio rather than spatial resolution.
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, USA. ciston@bnl.gov
authors.forename: J
authors.initials: J
authors.lastname: Ciston
authors.forename: J S
authors.initials: JS
authors.lastname: Kim
authors.forename: S J
authors.initials: SJ
authors.lastname: Haigh
authors.forename: A I
authors.initials: AI
authors.lastname: Kirkland
authors.forename: L D
authors.initials: LD
authors.lastname: Marks
mesh_terms: D003198:Computer Simulation; D007091:Image Processing, Computer-Assisted / Q000379:methods*; D008854:Microscopy, Electron / Q000379:methods*; D017655:Silicon Compounds / Q000032:analysis* / Q000737:chemistry*
chemical_list: D017655:Silicon Compounds; C503823:forsterite