title: Generation of highly n-type titanium oxide using plasma fluorine insertion.
abstract: True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modify the Fermi level and transport properties of titanium oxide outside the limits of O vacancy doping. The origin of the electronic structure modification is explained by ab initio calculation.
authors.affiliation: Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Hyungtak
authors.initials: H
authors.lastname: Seo
authors.forename: L Robert
authors.initials: LR
authors.lastname: Baker
authors.forename: Antoine
authors.initials: A
authors.lastname: Hervier
authors.forename: Jinwoo
authors.initials: J
authors.lastname: Kim
authors.forename: J L
authors.initials: JL
authors.lastname: Whitten
authors.forename: Gabor A
authors.initials: GA
authors.lastname: Somorjai
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005461:Fluorine / Q000737:chemistry*; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D014025:Titanium / Q000737:chemistry*
chemical_list: D005740:Gases; D046911:Macromolecular Substances; C009495:titanium dioxide; D005461:Fluorine; D014025:Titanium