title: Electric field dependent photocurrent decay length in single lead sulfide nanowire field effect transistors.
abstract: We determined the minority carrier diffusion length to be ∼1 μm in single PbS nanowire field effect transistors by scanning photocurrent microscopy. PbS nanowires grown by the vapor-liquid-solid method were p-type with hole mobilities up to 49 cm(2)/(V s). We measured a photoresponse time faster than 14 μs with near-unity charge separation efficiency at the contacts. For the first time, we also observed a field-dependent photocurrent decay length, indicating a drift dominant carrier transport at high bias.
authors.affiliation: Department of Physics, University of California, Davis, California 95616, USA.
authors.forename: Rion
authors.initials: R
authors.lastname: Graham
authors.forename: Chris
authors.initials: C
authors.lastname: Miller
authors.forename: Eunsoon
authors.initials: E
authors.lastname: Oh
authors.forename: Dong
authors.initials: D
authors.lastname: Yu
mesh_terms: D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007854:Lead / Q000737:chemistry* / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D013440:Sulfides / Q000737:chemistry* / Q000528:radiation effects; D014025:Titanium / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D013440:Sulfides; C009495:titanium dioxide; C018391:lead sulfide; D007854:Lead; D014025:Titanium