title: Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers.
abstract: Defects are one of the most important factors influencing the optical properties of groups III-V nitride semiconductor materials and thereby their applicability to light-emitting diodes. In this paper, we demonstrate that it is possible to estimate the presence of defects in InGaN laser diodes by performing pump-probe measurements and observing the induced absorptions. We have confirmed that the induced absorption originates from defects by performing experiments in which the pump intensity is varied. We believe that our method provides a powerful tool for evaluating the optical quality of InGaN materials before processing them into device fabrications.
authors.affiliation: Department of Physics, Chungnam National University, Daejeon, Korea.
authors.forename: C S
authors.initials: CS
authors.lastname: Kim
authors.forename: Y D
authors.initials: YD
authors.lastname: Jang
authors.forename: D M
authors.initials: DM
authors.lastname: Shin
authors.forename: J H
authors.initials: JH
authors.lastname: Kim
authors.forename: D
authors.initials: D
authors.lastname: Lee
authors.forename: Y H
authors.initials: YH
authors.lastname: Choi
authors.forename: M S
authors.initials: MS
authors.lastname: Noh
authors.forename: K J
authors.initials: KJ
authors.lastname: Yee
mesh_terms: D019544:Equipment Failure Analysis / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D010783:Photometry / Q000379:methods*; D011522:Protons
chemical_list: D011522:Protons; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride