title: Pressure-induced superconductivity in topological parent compound Bi2Te3.
abstract: We report a successful observation of pressure-induced superconductivity in a topological compound Bi(2)Te(3) with T(c) of ∼3 K between 3 to 6 GPa. The combined high-pressure structure investigations with synchrotron radiation indicated that the superconductivity occurred at the ambient phase without crystal structure phase transition. The Hall effects measurements indicated the hole-type carrier in the pressure-induced superconducting Bi(2)Te(3) single crystal. Consequently, the first-principles calculations based on the structural data obtained by the Rietveld refinement of X-ray diffraction patterns at high pressure showed that the electronic structure under pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi(2)Te(3) due to the proximity effect between superconducting bulk states and Dirac-type surface states. We also discuss the possibility that the bulk state could be a topological superconductor.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: J L
authors.initials: JL
authors.lastname: Zhang
authors.forename: S J
authors.initials: SJ
authors.lastname: Zhang
authors.forename: H M
authors.initials: HM
authors.lastname: Weng
authors.forename: W
authors.initials: W
authors.lastname: Zhang
authors.forename: L X
authors.initials: LX
authors.lastname: Yang
authors.forename: Q Q
authors.initials: QQ
authors.lastname: Liu
authors.forename: S M
authors.initials: SM
authors.lastname: Feng
authors.forename: X C
authors.initials: XC
authors.lastname: Wang
authors.forename: R C
authors.initials: RC
authors.lastname: Yu
authors.forename: L Z
authors.initials: LZ
authors.lastname: Cao
authors.forename: L
authors.initials: L
authors.lastname: Wang
authors.forename: W G
authors.initials: WG
authors.lastname: Yang
authors.forename: H Z
authors.initials: HZ
authors.lastname: Liu
authors.forename: W Y
authors.initials: WY
authors.lastname: Zhao
authors.forename: S C
authors.initials: SC
authors.lastname: Zhang
authors.forename: X
authors.initials: X
authors.lastname: Dai
authors.forename: Z
authors.initials: Z
authors.lastname: Fang
authors.forename: C Q
authors.initials: CQ
authors.lastname: Jin
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D018360:Crystallography, X-Ray; D004553:Electric Conductivity; D011312:Pressure; D017356:Synchrotrons; D013691:Tellurium / Q000737:chemistry*; D014961:X-Ray Diffraction
chemical_list: C542787:bismuth telluride; D013691:Tellurium; D001729:Bismuth