title: Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment.
abstract: Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 µm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO(2) support a model of Fermi level pinning near the conduction band. The I-V curves of the nanowires reveal a current carrier polarity reversal depending on Si-SiO(2) and Si-H bonds on the nanowire surfaces.
authors.affiliation: Marquette University, Milwaukee, WI 53201, USA. chunghoon.lee@marquette.edu
authors.forename: Chung-Hoon
authors.initials: CH
authors.lastname: Lee
authors.forename: Clark S
authors.initials: CS
authors.lastname: Ritz
authors.forename: Minghuang
authors.initials: M
authors.lastname: Huang
authors.forename: Michael W
authors.initials: MW
authors.lastname: Ziwisky
authors.forename: Robert J
authors.initials: RJ
authors.lastname: Blise
authors.forename: Max G
authors.initials: MG
authors.lastname: Lagally