title: Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.
abstract: Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
authors.affiliation: MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands. l.agazzi@ewi.utwente.nl
authors.forename: Laura
authors.initials: L
authors.lastname: Agazzi
authors.forename: Jonathan D B
authors.initials: JD
authors.lastname: Bradley
authors.forename: Meindert
authors.initials: M
authors.lastname: Dijkstra
authors.forename: Feridun
authors.initials: F
authors.lastname: Ay
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Kerstin
authors.initials: K
authors.lastname: Wörhoff
authors.forename: Markus
authors.initials: M
authors.lastname: Pollnau
mesh_terms: D000669:Amplifiers, Electronic; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D004871:Erbium / Q000737:chemistry*; D007834:Lasers; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D018511:Systems Integration
chemical_list: D004871:Erbium; D012825:Silicon