title: Fast photogalvanic response of a Bi12SiO20 crystal.
abstract: A photoelectric response of a Bi12SiO20 crystal grown in an argon atmosphere on a linearly polarized light (which is referred to as the linear photogalvanic effect) is reported for the first time in the nanosecond-time domain. Optimal geometry for detection of the photo-induced current concerning the orientation of the polarization state of the incident light in respect to the crystallographic axes of a sample was determined considering both the natural optical activity and light absorption of sillenite crystals. Spectral dependence of the photogalvanic current was measured in the visible part (410 - 610 nm) of the spectrum. Temporal shape of light-induced electric-current pulses observed at different experimental conditions is discussed. Obtained results are believed to show that sillenite crystals are very prospective for development of different ultra-fast optoelectronics devices.
authors.affiliation: Institute of Automation & Control Processes, FEB RAS, Vladivostok, Russia.
authors.forename: Roman V
authors.initials: RV
authors.lastname: Romashko
authors.forename: Alexander I
authors.initials: AI
authors.lastname: Grachev
authors.forename: Yuri N
authors.initials: YN
authors.lastname: Kulchin
authors.forename: Alexei A
authors.initials: AA
authors.lastname: Kamshilin
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D003217:Conductometry / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D010777:Photochemistry / Q000295:instrumentation*; D010783:Photometry / Q000295:instrumentation*; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D012822:Silicon Dioxide; D001729:Bismuth