title: GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
abstract: Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
authors.forename: Linus C
authors.initials: LC
authors.lastname: Chuang
authors.forename: Forrest G
authors.initials: FG
authors.lastname: Sedgwick
authors.forename: Roger
authors.initials: R
authors.lastname: Chen
authors.forename: Wai Son
authors.initials: WS
authors.lastname: Ko
authors.forename: Michael
authors.initials: M
authors.lastname: Moewe
authors.forename: Kar Wei
authors.initials: KW
authors.lastname: Ng
authors.forename: Thai-Truong D
authors.initials: TT
authors.lastname: Tran
authors.forename: Connie
authors.initials: C
authors.lastname: Chang-Hasnain
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D018511:Systems Integration
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D012825:Silicon