title: SWNT array resonant gate MOS transistor.
abstract: We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.
authors.affiliation: NanoLab, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
authors.forename: A
authors.initials: A
authors.lastname: Arun
authors.forename: S
authors.initials: S
authors.lastname: Campidelli
authors.forename: A
authors.initials: A
authors.lastname: Filoramo
authors.forename: V
authors.initials: V
authors.lastname: Derycke
authors.forename: P
authors.initials: P
authors.lastname: Salet
authors.forename: A M
authors.initials: AM
authors.lastname: Ionescu
authors.forename: M F
authors.initials: MF
authors.lastname: Goffman