title: Metal-molecule Schottky junction effects in surface enhanced Raman scattering.
abstract: We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.
authors.affiliation: Department of Nuclear, Plasma and Radiological Engineering, University of Illinois, Urbana-Champaign, Illinois 61801, United States.
authors.forename: Manas Ranjan
authors.initials: MR
authors.lastname: Gartia
authors.forename: Tiziana C
authors.initials: TC
authors.lastname: Bond
authors.forename: Gang Logan
authors.initials: GL
authors.lastname: Liu
mesh_terms: D008670:Metals / Q000737:chemistry*; D013059:Spectrum Analysis, Raman / Q000379:methods*; D013499:Surface Properties
chemical_list: D008670:Metals