title: Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.
abstract: Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.
authors.affiliation: Applied Physics Program through the Department of Bioengineering, Rice University, 6100 Main Street, Houston, Texas 77005, United States.
authors.forename: Jun
authors.initials: J
authors.lastname: Yao
authors.forename: Lin
authors.initials: L
authors.lastname: Zhong
authors.forename: Douglas
authors.initials: D
authors.lastname: Natelson
authors.forename: James M
authors.initials: JM
authors.lastname: Tour
mesh_terms: D017097:Electric Impedance; D004581:Electronics / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D017711:Nonlinear Dynamics; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D017655:Silicon Compounds