title: Coulomb energy determination of a single Si dangling bond.
abstract: Determination of the Coulomb energy of single point defects is essential because changing their charge state critically affects the properties of materials. Based on a novel approach that allows us to simultaneously identify a point defect and to monitor the occupation probability of its electronic state, we unambiguously measure the charging energy of a single Si dangling bond with tunneling spectroscopy. Comparing the experimental result with tight-binding calculations highlights the importance of the particular surrounding of the localized state on the effective charging energy.
authors.affiliation: Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.
authors.forename: T H
authors.initials: TH
authors.lastname: Nguyen
authors.forename: G
authors.initials: G
authors.lastname: Mahieu
authors.forename: M
authors.initials: M
authors.lastname: Berthe
authors.forename: B
authors.initials: B
authors.lastname: Grandidier
authors.forename: C
authors.initials: C
authors.lastname: Delerue
authors.forename: D
authors.initials: D
authors.lastname: Stiévenard
authors.forename: Ph
authors.initials: P
authors.lastname: Ebert