title: Quantitative determination of contributions to the thermoelectric power factor in Si nanostructures.
abstract: We report thermoelectric measurements on a silicon nanoribbon in which an integrated gate provides strong carrier confinement and enables tunability of the carrier density over a wide range. We find a significantly enhanced thermoelectric power factor that can be understood by considering its behavior as a function of carrier density. We identify the underlying mechanisms for the power factor in the nanoribbon, which include quantum confinement, low scattering due to the absence of dopants, and, at low temperatures, a significant phonon-drag contribution. The measurements set a target for what may be achievable in ultrathin nanowires.
authors.affiliation: University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Hyuk Ju
authors.initials: HJ
authors.lastname: Ryu
authors.forename: Z
authors.initials: Z
authors.lastname: Aksamija
authors.forename: D M
authors.initials: DM
authors.lastname: Paskiewicz
authors.forename: S A
authors.initials: SA
authors.lastname: Scott
authors.forename: M G
authors.initials: MG
authors.lastname: Lagally
authors.forename: I
authors.initials: I
authors.lastname: Knezevic
authors.forename: M A
authors.initials: MA
authors.lastname: Eriksson