title: Waveguide-integrated telecom-wavelength photodiode in deposited silicon.
abstract: We demonstrate photodiodes in deposited polycrystalline silicon at 1550 nm wavelength with 0.15 A/W responsivity, 40 nA dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of 6 dB/cm, which allows the same microring resonator device to act as both a demultiplexing filter and a photodetector. We discuss the use of deposited silicon-based complementary metal-oxide semiconductor materials for nanophotonic interconnects.
authors.affiliation: School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA. kjp32@cornell.edu
authors.forename: Kyle
authors.initials: K
authors.lastname: Preston
authors.forename: Yoon Ho Daniel
authors.initials: YH
authors.lastname: Lee
authors.forename: Mian
authors.initials: M
authors.lastname: Zhang
authors.forename: Michal
authors.initials: M
authors.lastname: Lipson