title: Limits on charge carrier mobility in suspended graphene due to flexural phonons.
abstract: The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/V s at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
authors.affiliation: Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid, Spain.
authors.forename: Eduardo V
authors.initials: EV
authors.lastname: Castro
authors.forename: H
authors.initials: H
authors.lastname: Ochoa
authors.forename: M I
authors.initials: MI
authors.lastname: Katsnelson
authors.forename: R V
authors.initials: RV
authors.lastname: Gorbachev
authors.forename: D C
authors.initials: DC
authors.lastname: Elias
authors.forename: K S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: A K
authors.initials: AK
authors.lastname: Geim
authors.forename: F
authors.initials: F
authors.lastname: Guinea