title: Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film.
abstract: Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).
authors.affiliation: Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA. zboekelheide@berkeley.edu
authors.forename: Z
authors.initials: Z
authors.lastname: Boekelheide
authors.forename: A X
authors.initials: AX
authors.lastname: Gray
authors.forename: C
authors.initials: C
authors.lastname: Papp
authors.forename: B
authors.initials: B
authors.lastname: Balke
authors.forename: D A
authors.initials: DA
authors.lastname: Stewart
authors.forename: S
authors.initials: S
authors.lastname: Ueda
authors.forename: K
authors.initials: K
authors.lastname: Kobayashi
authors.forename: F
authors.initials: F
authors.lastname: Hellman
authors.forename: C S
authors.initials: CS
authors.lastname: Fadley