title: Is there an intrinsic limit to the charge-carrier-induced increase of the Curie temperature of EuO?
abstract: Rare earth doping is the key strategy to increase the Curie temperature (T(C)) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T(C) increase, however, are yet to be understood. We report measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T(C), with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T(C).
authors.affiliation: Zentrum für elektronische Korrelation und Magnetismus, Universität Augsburg, Universitätsstrasse 1, 86159 Augsburg, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Mairoser
authors.forename: A
authors.initials: A
authors.lastname: Schmehl
authors.forename: A
authors.initials: A
authors.lastname: Melville
authors.forename: T
authors.initials: T
authors.lastname: Heeg
authors.forename: L
authors.initials: L
authors.lastname: Canella
authors.forename: P
authors.initials: P
authors.lastname: Böni
authors.forename: W
authors.initials: W
authors.lastname: Zander
authors.forename: J
authors.initials: J
authors.lastname: Schubert
authors.forename: D E
authors.initials: DE
authors.lastname: Shai
authors.forename: E J
authors.initials: EJ
authors.lastname: Monkman
authors.forename: K M
authors.initials: KM
authors.lastname: Shen
authors.forename: D G
authors.initials: DG
authors.lastname: Schlom
authors.forename: J
authors.initials: J
authors.lastname: Mannhart