title: Spin Hall effect transistor.
abstract: The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer.
authors.affiliation: Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK. jw526@cam.ac.uk
authors.forename: Jörg
authors.initials: J
authors.lastname: Wunderlich
authors.forename: Byong-Guk
authors.initials: BG
authors.lastname: Park
authors.forename: Andrew C
authors.initials: AC
authors.lastname: Irvine
authors.forename: Liviu P
authors.initials: LP
authors.lastname: Zârbo
authors.forename: Eva
authors.initials: E
authors.lastname: Rozkotová
authors.forename: Petr
authors.initials: P
authors.lastname: Nemec
authors.forename: Vít
authors.initials: V
authors.lastname: Novák
authors.forename: Jairo
authors.initials: J
authors.lastname: Sinova
authors.forename: Tomás
authors.initials: T
authors.lastname: Jungwirth