title: A ZnO-nanowire phototransistor prepared on glass substrates.
abstract: The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34 × 10(17) cm(-3) when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnO phototransistor were 6.67 × 10(-17) W and 1.27 × 10(13) cm Hz(0.5) W(-1), respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.
authors.affiliation: Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
authors.forename: W Y
authors.initials: WY
authors.lastname: Weng
authors.forename: S J
authors.initials: SJ
authors.lastname: Chang
authors.forename: C L
authors.initials: CL
authors.lastname: Hsu
authors.forename: T J
authors.initials: TJ
authors.lastname: Hsueh