title: Atom probe analysis of a 3D finFET with high-k metal gate.
abstract: The atom probe analysis of a full gate stack (metal gate/high-k dielectric) in a 3D finFET is reported. The measurement reliability in this kind of heterogeneous structure is discussed in the light of different artefacts, i.e. mass overlap and 3D reconstruction artefacts.
authors.affiliation: Imec, Kapeldreef 75, B-3001 Leuven, Belgium. Matthieu.Gilbert@imec.be
authors.forename: M
authors.initials: M
authors.lastname: Gilbert
authors.forename: W
authors.initials: W
authors.lastname: Vandervorst
authors.forename: S
authors.initials: S
authors.lastname: Koelling
authors.forename: A K
authors.initials: AK
authors.lastname: Kambham