title: Diffusion and criticality in undoped graphene with resonant scatterers.
abstract: A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity σ of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and σ grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) σ saturates at a constant value that depends on the vacancy distribution among two sublattices.
authors.affiliation: Institut für Nanotechnologie, Karlsruhe Institute of Technology, Karlsruhe, Germany.
authors.forename: P M
authors.initials: PM
authors.lastname: Ostrovsky
authors.forename: M
authors.initials: M
authors.lastname: Titov
authors.forename: S
authors.initials: S
authors.lastname: Bera
authors.forename: I V
authors.initials: IV
authors.lastname: Gornyi
authors.forename: A D
authors.initials: AD
authors.lastname: Mirlin