title: Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices.
abstract: By combining atomic force microscopy and trans-port measurements, we systematically investigated effects of thermal annealing on surface morphologies and electrical properties of single-layer graphene devices fabricated by electron beam lithography on silicon oxide (SiO(2)) substrates. Thermal treatment above 300 °C in vacuum was required to effectively remove resist residues on graphene surfaces. However, annealing at high temperature was found to concomitantly bring graphene in close contact with SiO(2) substrates and induce increased coupling between them, which leads to heavy hole doping and severe degradation of mobilities in graphene devices. To address this problem, a wet-chemical approach employing chloroform was developed in our study, which was shown to enable both intrinsic surfaces and enhanced electrical properties of graphene devices. Upon the recovery of intrinsic surfaces of graphene, the adsorption and assisted fibrillation of amyloid β-peptide (Aβ1-42) on graphene were electrically measured in real time.
authors.affiliation: National Center for Nanoscience and Technology, Beijing, People's Republic of China.
authors.forename: Zengguang
authors.initials: Z
authors.lastname: Cheng
authors.forename: Qiaoyu
authors.initials: Q
authors.lastname: Zhou
authors.forename: Chenxuan
authors.initials: C
authors.lastname: Wang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.forename: Chen
authors.initials: C
authors.lastname: Wang
authors.forename: Ying
authors.initials: Y
authors.lastname: Fang
mesh_terms: D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D006108:Graphite / Q000737:chemistry*; D006244:Hardness; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012822:Silicon Dioxide / Q000737:chemistry*; D012996:Solutions; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012996:Solutions; D012822:Silicon Dioxide; D006108:Graphite