title: Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors.
abstract: The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100-300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignificant and the low frequency noise is best modeled by the Δn-model. For some devices, evidence of random telegraph signals is observed at low temperatures, indicating that fewer traps are active and that the 1∕f noise due to number fluctuations is further resolved to fewer fluctuators, resulting in a Lorentzian spectrum.
authors.forename: Nitin K
authors.initials: NK
authors.lastname: Rajan
authors.forename: David A
authors.initials: DA
authors.lastname: Routenberg
authors.forename: Jin
authors.initials: J
authors.lastname: Chen
authors.forename: Mark A
authors.initials: MA
authors.lastname: Reed