title: Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃.
abstract: We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, China.
authors.forename: J
authors.initials: J
authors.lastname: Chen
authors.forename: H J
authors.initials: HJ
authors.lastname: Qin
authors.forename: F
authors.initials: F
authors.lastname: Yang
authors.forename: J
authors.initials: J
authors.lastname: Liu
authors.forename: T
authors.initials: T
authors.lastname: Guan
authors.forename: F M
authors.initials: FM
authors.lastname: Qu
authors.forename: G H
authors.initials: GH
authors.lastname: Zhang
authors.forename: J R
authors.initials: JR
authors.lastname: Shi
authors.forename: X C
authors.initials: XC
authors.lastname: Xie
authors.forename: C L
authors.initials: CL
authors.lastname: Yang
authors.forename: K H
authors.initials: KH
authors.lastname: Wu
authors.forename: Y Q
authors.initials: YQ
authors.lastname: Li
authors.forename: L
authors.initials: L
authors.lastname: Lu