title: Graphene field-effect transistors with ferroelectric gating.
abstract: Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (n(BG)) provided by normal dielectric gating. More importantly, we prove that n(BG) can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric field-effect transistors with resistance change over 500% and reproducible no-volatile switching over 10⁵ cycles.
authors.affiliation: Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542.
authors.forename: Yi
authors.initials: Y
authors.lastname: Zheng
authors.forename: Guang-Xin
authors.initials: GX
authors.lastname: Ni
authors.forename: Chee-Tat
authors.initials: CT
authors.lastname: Toh
authors.forename: Chin-Yaw
authors.initials: CY
authors.lastname: Tan
authors.forename: Kui
authors.initials: K
authors.lastname: Yao
authors.forename: Barbaros
authors.initials: B
authors.lastname: Ozyilmaz