title: Cleaved-edge-overgrowth nanogap electrodes.
abstract: We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 MΩ range with kΩ lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.
authors.affiliation: Walter Schottky Institut, Technische Universität München, Garching, Germany.
authors.forename: Sebastian M
authors.initials: SM
authors.lastname: Luber
authors.forename: Max
authors.initials: M
authors.lastname: Bichler
authors.forename: Gerhard
authors.initials: G
authors.lastname: Abstreiter
authors.forename: Marc
authors.initials: M
authors.lastname: Tornow