title: Lateral, Ge, nanowire growth on SiO2.
abstract: Vapor-liquid-solid (VLS) nanowires (NWs) typically grow in [111] directions. Previously, the authors have demonstrated guided Si NW growth, engineering the VLS NWs to grow in a [110] direction against a SiO(2) surface. In this work, the authors demonstrate guided high-quality Ge nanowire growth against a SiO(2) surface in the substrate plane to bridge between two Si mesas. The authors explore the interfaces between a Ge NW and the two Si device-layer mesas and report high-quality, epitaxial interfaces between the Ge NW and both Si mesas.
authors.affiliation: Information and Quantum Systems Laboratory, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA.
authors.forename: Nathaniel J
authors.initials: NJ
authors.lastname: Quitoriano
authors.forename: Theodore I
authors.initials: TI
authors.lastname: Kamins