title: Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells.
abstract: The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10  kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Wagner
authors.forename: Harald
authors.initials: H
authors.lastname: Schneider
authors.forename: Dominik
authors.initials: D
authors.lastname: Stehr
authors.forename: Stephan
authors.initials: S
authors.lastname: Winnerl
authors.forename: Aaron M
authors.initials: AM
authors.lastname: Andrews
authors.forename: Stephan
authors.initials: S
authors.lastname: Schartner
authors.forename: Gottfried
authors.initials: G
authors.lastname: Strasser
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm