title: Inversion of spin photocurrent due to resonant transmission.
abstract: We report on the inversion of spin-dependent photocurrent via interface localized states formed at the interface of an Fe/n-AlGaAs/GaAs quantum well heterostructure by means of an optical spin orientation technique. A careful adjustment of the excitation photon energy, which is determined by a separate analysis of electroluminescence spectra under a spin injection condition, enables us to explore the spin-dependent characteristics of photoelectron transmission from the quantum well into Fe. The bias dependence of the spin-dependent photocurrent shows clear spikelike features at the voltage which is compatible with the formation of the interface localized resonant states in the Schottky depletion layer.
authors.affiliation: Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
authors.forename: E
authors.initials: E
authors.lastname: Wada
authors.forename: Y
authors.initials: Y
authors.lastname: Shirahata
authors.forename: T
authors.initials: T
authors.lastname: Naito
authors.forename: M
authors.initials: M
authors.lastname: Itoh
authors.forename: M
authors.initials: M
authors.lastname: Yamaguchi
authors.forename: T
authors.initials: T
authors.lastname: Taniyama