Kinetic study on the H + SiH4 abstraction reaction using an ab initio potential energy surface.
Variational transition state theory calculations with the correction of multidimensional tunneling are performed on a 12-dimensional ab initio potential energy surface for the H + SiH(4) abstraction reaction. The surface is constructed using a dual-level strategy. For the temperature range 200-1600 K, thermal rate constants are calculated and kinetic isotope effects for various isotopic species of the title reaction are investigated. The results are in very good agreement with available experimental data.
Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Jianwei
J
Cao
Zhijun
Z
Zhang
Chunfang
C
Zhang
Wensheng
W
Bian
Yin
Y
Guo
D006859:Hydrogen / Q000737:chemistry*; D007700:Kinetics; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D006859:Hydrogen; D012825:Silicon