A heteroepitaxial perovskite metal-base transistor.
'More than Moore' captures a concept for overcoming limitations in silicon electronics by incorporating new functionalities in the constituent materials. Perovskite oxides are candidates because of their vast array of physical properties in a common structure. They also enable new electronic devices based on strongly-correlated electrons. The field effect transistor and its derivatives have been the principal oxide devices investigated thus far, but another option is available in a different geometry: if the current is perpendicular to the interface, the strong internal electric fields generated at back-to-back heterojunctions can be used for oxide electronics, analogous to bipolar transistors. Here we demonstrate a perovskite heteroepitaxial metal-base transistor operating at room temperature, enabled by interface dipole engineering. Analysis of many devices quantifies the evolution from hot-electron to permeable-base behaviour. This device provides a platform for incorporating the exotic ground states of perovskite oxides, as well as novel electronic phases at their interfaces.
Takeaki
T
Yajima
Yasuyuki
Y
Hikita
Harold Y
HY
Hwang
Phys Rev Lett. 1991 Oct 7;67(15):2099-2101
10044335
Science. 1994 Dec 2;266(5190):1540-2
17841713
Nature. 2006 May 11;441(7090):195-8
16688171
Nat Mater. 2008 Nov;7(11):855-8
18849974
Phys Rev Lett. 2007 Nov 9;99(19):196404
18233095
Nature. 2004 Jan 29;427(6973):423-6
14749825
Phys Rev Lett. 2000 Oct 9;85(15):3277-80
11019320
Nature. 2002 Sep 26;419(6905):378-80
12353030
Phys Rev Lett. 1995 Jun 26;74(26):5260-5263
10058723
Nature. 2003 Aug 28;424(6952):1015-8
12944958
Science. 2010 Mar 26;327(5973):1601-2
20339063
Nature. 2008 Oct 9;455(7214):782-5
18843365