Radiation thermometry of silicon wafers based on emissivity-invariant condition.
An emissivity-invariant condition for a silicon wafer was determined by simulation modeling and it was confirmed experimentally. The p-polarized spectral emissivity at a wavelength of 900 nm and at temperatures over 900 K was constant at 0.83 at an angle of about 55.4° irrespective of large variations in the oxide layer thickness and the resistivity due to the different impurity doping concentrations of the silicon wafer. The expanded uncertainty, U(c) = ku(c) (k = 2), of the temperature measurement is estimated to be 4.9 K. This result is expected to significantly enhance the accuracy of radiometric temperature measurements of silicon wafers in actual manufacturing processes.
School of Science and Engineering, Toyo University, 2100, Kujirai, Kawagoe 350-8585, Japan. iuchi@toyo.jp
Tohru
T
Iuchi
Tomohiro
T
Seo