Segregation behaviors and radial distribution of dopant atoms in silicon nanowires.
Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering. Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki, Tsukuba, Japan. FUKATA.Naoki@nims.go.jp
Naoki
N
Fukata
Shinya
S
Ishida
Shigeki
S
Yokono
Ryo
R
Takiguchi
Jun
J
Chen
Takashi
T
Sekiguchi
Kouichi
K
Murakami
D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*
D012825:Silicon