Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays.
An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%-90% rise/decay times to light stimuli of different rise times (ranging from 0.1 to 5 ns) and decay times (ranging from 1 to 50 ns), as well as for different decay times of the photodetector are compared in theory and simulation. A measured detector response is used as a reference to further validate the model and the results show a mean deviation of simulated over measured values of 1%.
Molecular Imaging Program at Stanford (MIPS), Radiology Department, Stanford University School of Medicine, Stanford, California, USA.
Virginia Ch
VCh
Spanoudaki
Craig S
CS
Levin
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D012588:Scintillation Counting / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D012825:Silicon