Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. tbwei@semi.ac.cn
Tongbo
T
Wei
Qingfeng
Q
Kong
Junxi
J
Wang
Jing
J
Li
Yiping
Y
Zeng
Guohong
G
Wang
Jinmin
J
Li
Yuanxun
Y
Liao
Futing
F
Yi
D002586:Cesium / Q000737:chemistry*; D002712:Chlorides / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D012666:Semiconductors; D013499:Surface Properties
D002712:Chlorides; D007204:Indium; D002586:Cesium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; C028019:cesium chloride