Transformable functional nanoscale building blocks with wafer-scale silicon nanowires.
Through the fusion of electrostatics and mechanical dynamics, we demonstrate a transformable silicon nanowire (SiNW) field effect transistor (FET) through a wafer-scale top-down approach. By felicitously taking advantage of the proposed electrostatic SiNW-FET with mechanically movable SiNWs, all essential logic gates, including address decoders, can be monolithically integrated into a single device. The unification of various functional devices, such as pn-diodes, FETs, logic gates, and address decoders, can therefore eliminate the complex fabrication issues associated with nanoscale integration. These results represent a step toward the creation of multifunctional and flexible nanoelectronics.
Department of Electrical Engineering, KAIST, Yuseong-gu, Daejeon, Republic of Korea.
Sung-Jin
SJ
Choi
Jae-Hyuk
JH
Ahn
Jin-Woo
JW
Han
Myeong-Lok
ML
Seol
Dong-Il
DI
Moon
Sungho
S
Kim
Yang-Kyu
YK
Choi
D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D012825:Silicon