Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films.
The synthesis of few-layered graphene is performed by ion implantation of carbon species in thin nickel films, followed by high temperature annealing and quenching. Although ion implantation enables a precise control of the carbon content and of the uniformity of the in-plane carbon concentration in the Ni films before annealing, we observe thickness non-uniformities in the synthesized graphene layers after high temperature annealing. These non-uniformities are probably induced by the heterogeneous distribution/topography of the graphene nucleation sites on the Ni surface. Taken altogether, our results indicate that the number of graphene layers on top of Ni films is controlled by the nucleation process on the Ni surface rather than by the carbon content in the Ni film.
Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Palaiseau, France.
Laurent
L
Baraton
Zhanbing
Z
He
Chang Seok
CS
Lee
Jean-Luc
JL
Maurice
Costel Sorin
CS
Cojocaru
Anne-Françoise
AF
Gourgues-Lorenzon
Young Hee
YH
Lee
Didier
D
Pribat