title: Tunable band gaps in bilayer graphene-BN heterostructures.
abstract: We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.
authors.affiliation: Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States. ashwin@engin.umass.edu
authors.forename: Ashwin
authors.initials: A
authors.lastname: Ramasubramaniam
authors.forename: Doron
authors.initials: D
authors.lastname: Naveh
authors.forename: Elias
authors.initials: E
authors.lastname: Towe