title: Towards gigahertz operation: ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide.
abstract: Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C60/WO3 diodes.
authors.affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
authors.forename: Dongmo
authors.initials: D
authors.lastname: Im
authors.forename: Hanul
authors.initials: H
authors.lastname: Moon
authors.forename: Minchul
authors.initials: M
authors.lastname: Shin
authors.forename: Joungho
authors.initials: J
authors.lastname: Kim
authors.forename: Seunghyup
authors.initials: S
authors.lastname: Yoo
mesh_terms: D004560:Electricity; D004566:Electrodes; D037741:Fullerenes / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D009930:Organic Chemicals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D013997:Time Factors; D014414:Tungsten / Q000737:chemistry*
chemical_list: D037741:Fullerenes; D009930:Organic Chemicals; D010087:Oxides; C511604:tungsten oxide; C069837:fullerene C60; D014414:Tungsten