title: Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing.
abstract: We study the photoluminescence and impact of post-growth annealing of stacked, strain-free GaAs quantum dots fabricated by refilling of self-organized nanoholes using molecular beam epitaxy. Temperature- and power-dependent photoluminescence studies reveal an excellent optical quality of the quantum-dot stack. After high-temperature post-growth annealing only slight blueshifts and an increase in full width at half-maximum of the photoluminescence peak are observed, indicating very high-temperature stability and crystalline quality of the stacked GaAs quantum-dot structure.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere, Finland.
authors.forename: Ville
authors.initials: V
authors.lastname: Polojärvi
authors.forename: Andreas
authors.initials: A
authors.lastname: Schramm
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina
authors.forename: Andrea
authors.initials: A
authors.lastname: Stemmann
authors.forename: Christian
authors.initials: C
authors.lastname: Heyn