title: Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements.
abstract: We investigate current saturation at short channel lengths in graphene field-effect transistors (GFETs). Saturation is necessary to achieve low-output conductance required for device power gain. Dual-channel pulsed current-voltage measurements are performed to eliminate the significant effects of trapped charge in the gate dielectric, a problem common to all oxide-based dielectric films on graphene. With pulsed measurements, graphene transistors with channel lengths as small as 130 nm achieve output conductance as low as 0.3 mS/μm in saturation. The transconductance of the devices is independent of channel length, consistent with a velocity saturation model of high-field transport. Saturation velocities have a density dependence consistent with diffusive transport limited by optical phonon emission.
authors.affiliation: Department of Electrical Engineering, Columbia University , New York, New York 10027, United States.
authors.forename: Inanc
authors.initials: I
authors.lastname: Meric
authors.forename: Cory R
authors.initials: CR
authors.lastname: Dean
authors.forename: Andrea F
authors.initials: AF
authors.lastname: Young
authors.forename: Natalia
authors.initials: N
authors.lastname: Baklitskaya
authors.forename: Noah J
authors.initials: NJ
authors.lastname: Tremblay
authors.forename: Colin
authors.initials: C
authors.lastname: Nuckolls
authors.forename: Philip
authors.initials: P
authors.lastname: Kim
authors.forename: Kenneth L
authors.initials: KL
authors.lastname: Shepard