title: Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon.
abstract: A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.
authors.affiliation: Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899-8370, USA. konrad.rykaczewski@nist.gov
authors.forename: Konrad
authors.initials: K
authors.lastname: Rykaczewski
authors.forename: Owen J
authors.initials: OJ
authors.lastname: Hildreth
authors.forename: Ching P
authors.initials: CP
authors.lastname: Wong
authors.forename: Andrei G
authors.initials: AG
authors.lastname: Fedorov
authors.forename: John Henry J
authors.initials: JH
authors.lastname: Scott
mesh_terms: D008855:Microscopy, Electron, Scanning; D055616:Microtechnology / Q000379:methods*; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012825:Silicon