title: Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser.
abstract: We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2.8 μm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.
authors.affiliation: Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany. benno.roesener@iaf.fraunhofer.de
authors.forename: Benno
authors.initials: B
authors.lastname: Rösener
authors.forename: Marcel
authors.initials: M
authors.lastname: Rattunde
authors.forename: Rüdiger
authors.initials: R
authors.lastname: Moser
authors.forename: Sebastian
authors.initials: S
authors.lastname: Kaspar
authors.forename: Tino
authors.initials: T
authors.lastname: Töpper
authors.forename: Christian
authors.initials: C
authors.lastname: Manz
authors.forename: Klaus
authors.initials: K
authors.lastname: Köhler
authors.forename: Joachim
authors.initials: J
authors.lastname: Wagner