title: Communication: Highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of doped silicon clusters from core level spectroscopy.
abstract: A method to determine band gaps of size-selected and isolated nanoparticles by combination of valence band and core-level photoionization spectroscopy is presented. This approach is widely applicable and provides a convenient alternative to current standard techniques for the determination of band gaps by optical or photoelectron spectroscopy. A first application to vanadium doped silicon clusters confirms a striking size-dependence of their highest occupied-lowest unoccupied molecular orbital gaps.
authors.affiliation: Institut für Methoden und Instrumentierung der Synchrotronstrahlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, G-I2, Albert-Einstein-Straße 15, 12489 Berlin, Germany. tobias.lau@helmholtz-berlin.de
authors.forename: J T
authors.initials: JT
authors.lastname: Lau
authors.forename: M
authors.initials: M
authors.lastname: Vogel
authors.forename: A
authors.initials: A
authors.lastname: Langenberg
authors.forename: K
authors.initials: K
authors.lastname: Hirsch
authors.forename: J
authors.initials: J
authors.lastname: Rittmann
authors.forename: V
authors.initials: V
authors.lastname: Zamudio-Bayer
authors.forename: T
authors.initials: T
authors.lastname: Möller
authors.forename: B
authors.initials: B
authors.lastname: von Issendorff