title: Growth of directly transferable In2O3 nanowire mats for transparent thin-film transistor applications.
authors.affiliation: Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, China. gzshen@mail.hust.edu.cn
authors.forename: Guozhen
authors.initials: G
authors.lastname: Shen
authors.forename: Jing
authors.initials: J
authors.lastname: Xu
authors.forename: Xianfu
authors.initials: X
authors.lastname: Wang
authors.forename: Hongtao
authors.initials: H
authors.lastname: Huang
authors.forename: Di
authors.initials: D
authors.lastname: Chen
mesh_terms: D004566:Electrodes; D007204:Indium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D007204:Indium; C047711:indium oxide; D012825:Silicon