title: Low energy focused ion beam milling of silicon and germanium nanostructures.
abstract: In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga( + ) ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts can be avoided and, additionally, some physical effects (e.g. redeposition and ion channelling) are significantly suppressed. The structures milled with low energy ions suffer less subsurface ion beam damage (amorphization, formation of voids) and are thus more suitable for selected applications in nanotechnology.
authors.affiliation: Institute of Physical Engineering, Brno University of Technology, Technická 2, 61669 Brno, Czech Republic. kolibal.m@fme.vutbr.cz
authors.forename: Miroslav
authors.initials: M
authors.lastname: Kolíbal
authors.forename: Tomáš
authors.initials: T
authors.lastname: Matlocha
authors.forename: Tomáš
authors.initials: T
authors.lastname: Vystavěl
authors.forename: Tomáš
authors.initials: T
authors.lastname: Sikola