title: Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces.
abstract: We study both experimentally and theoretically the electronic behavior of dangling bonds (DBs) at a hydrogen terminated Si(100)-2×1 surface. Dangling bonds behave as quantum dots and, depending on their separation, can be tunnel coupled with each other or completely isolated. On n-type highly doped silicon, the latter have a net charge of -1e, while coupled DBs exhibit altered but predictable filling behavior derived from an interplay between interdot tunneling and Coulomb repulsion. We found good correlation between many scanning tunneling micrographs of dangling bond structures and our theoretical results of a corresponding extended Hubbard model. We also demonstrated chemical methods to prevent tunnel coupling and isolate charge on a single dangling bond.
authors.affiliation: National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta T6G 2M9, Canada. jason.pitters@nrc-cnrc.gc.ca
authors.forename: Jason L
authors.initials: JL
authors.lastname: Pitters
authors.forename: Lucian
authors.initials: L
authors.lastname: Livadaru
authors.forename: M Baseer
authors.initials: MB
authors.lastname: Haider
authors.forename: Robert A
authors.initials: RA
authors.lastname: Wolkow
mesh_terms: D006859:Hydrogen / Q000737:chemistry*; D015394:Molecular Structure; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D006859:Hydrogen; D012825:Silicon