title: Properties of uniform diameter InN nanowires obtained under Si doping.
abstract: High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany. gotschke@pdi-berlin.de
authors.forename: T
authors.initials: T
authors.lastname: Gotschke
authors.forename: E O
authors.initials: EO
authors.lastname: Schäfer-Nolte
authors.forename: R
authors.initials: R
authors.lastname: Caterino
authors.forename: F
authors.initials: F
authors.lastname: Limbach
authors.forename: T
authors.initials: T
authors.lastname: Stoica
authors.forename: E
authors.initials: E
authors.lastname: Sutter
authors.forename: K
authors.initials: K
authors.lastname: Jeganathan
authors.forename: R
authors.initials: R
authors.lastname: Calarco