title: On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides.
abstract: We present what we believe to be the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5 dB at telecom wavelength is reported. Measured nonlinear parameter is 770 W(-) m(-1), nonlinear absorption 28 W(-1)  m(-1), bandgap 1.61 eV.
authors.affiliation: INTEC Department, Ghent University-IMEC, Ghent, Belgium. Bart.Kuyken@Intec.ugent.be
authors.forename: Bart
authors.initials: B
authors.lastname: Kuyken
authors.forename: Stéphane
authors.initials: S
authors.lastname: Clemmen
authors.forename: Shankar Kumar
authors.initials: SK
authors.lastname: Selvaraja
authors.forename: Wim
authors.initials: W
authors.lastname: Bogaerts
authors.forename: Dries
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: Philippe
authors.initials: P
authors.lastname: Emplit
authors.forename: Serge
authors.initials: S
authors.lastname: Massar
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Roel
authors.initials: R
authors.lastname: Baets