title: A reproducible route to p-ZnO films and their application in light-emitting devices.
abstract: Although great efforts have been made, reproducible p-type doping is still one of the largest hurdles that hinders the optoelectronic applications of ZnO. In this Letter, a reproducible route to p-type ZnO films employing lithium-nitrogen as a dual-acceptor dopant has been demonstrated, and p-i-n structured light-emitting devices (LEDs) have been constructed. Obvious purple emissions have been observed from the LEDs, confirming the applicability of the p-type ZnO films in optoelectronic devices. The results reported in this Letter provide a reproducible route to p-type ZnO films, and thus may lay a solid ground for future optoelectronic applications of ZnO.
authors.affiliation: Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
authors.forename: F
authors.initials: F
authors.lastname: Sun
authors.forename: C X
authors.initials: CX
authors.lastname: Shan
authors.forename: B H
authors.initials: BH
authors.lastname: Li
authors.forename: Z Z
authors.initials: ZZ
authors.lastname: Zhang
authors.forename: D Z
authors.initials: DZ
authors.lastname: Shen
authors.forename: Z Y
authors.initials: ZY
authors.lastname: Zhang
authors.forename: D
authors.initials: D
authors.lastname: Fan