title: Raman spectroscopic analysis of mo/si multilayers.
abstract: Raman spectra are reported from MoSi2 polycrystalline powder and soft x-ray Mo/Si multilayers. The sharp lines at 323 and 438 cm-1 are all due to crystalline MoSi2. These lines in the powder sample intensify with annealing. The Raman spectra of as-deposited multilayers shows a broad asymmetric peak, highest at about 480 cm-1. We attribute this to α-Si which is highly disordered. In contrast to α-Si in semiconductor/semiconductor and semiconductor/dielectric multilayers, in the Mo/Si samples the Raman signal can vanish after modest heating. This provides evidence that the composition of the silicon component of the multilayer changes even with 200°C annealing. Further annealing also produces the signature for crystalline MoSi2 in the multilayer samples. This is the first report of the characterization of Mo/Si soft x-ray multilayers by Raman spectroscopy, and it indicates that Raman spectroscopy may be an effective technique for characterizing these soft x-ray multilayers and may be useful in studying their interfaces.
authors.affiliation: Department of Physics and Astronomy, Brigham Young University, Provo. Utah 84602.
authors.forename: D D
authors.initials: DD
authors.lastname: Allred
authors.forename: M
authors.initials: M
authors.lastname: Cai
authors.forename: Q
authors.initials: Q
authors.lastname: Wang
authors.forename: D M
authors.initials: DM
authors.lastname: Hatch
authors.forename: A
authors.initials: A
authors.lastname: Reyes-Mena