title: Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition.
abstract: We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, People's Republic of China.
authors.forename: Kai
authors.initials: K
authors.lastname: Yan
authors.forename: Hailin
authors.initials: H
authors.lastname: Peng
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhou
authors.forename: Hui
authors.initials: H
authors.lastname: Li
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu