title: Vertical transfer of uniform silicon nanowire arrays via crack formation.
abstract: Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside polymers.
authors.affiliation: Department of Mechanical Engineering, Stanford University, California 94305, United States.
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Weisse
authors.forename: Dong Rip
authors.initials: DR
authors.lastname: Kim
authors.forename: Chi Hwan
authors.initials: CH
authors.lastname: Lee
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Zheng