title: Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper.
abstract: Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.
authors.affiliation: Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712-0292, USA.
authors.forename: Xuesong
authors.initials: X
authors.lastname: Li
authors.forename: Carl W
authors.initials: CW
authors.lastname: Magnuson
authors.forename: Archana
authors.initials: A
authors.lastname: Venugopal
authors.forename: Rudolf M
authors.initials: RM
authors.lastname: Tromp
authors.forename: James B
authors.initials: JB
authors.lastname: Hannon
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel
authors.forename: Luigi
authors.initials: L
authors.lastname: Colombo
authors.forename: Rodney S
authors.initials: RS
authors.lastname: Ruoff