title: An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers.
abstract: X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph.
authors.affiliation: Laboratory of Physics, Helsinki University of Technology, Otakaari 1 M, 02150 Espoo, Finland.
authors.forename: J
authors.initials: J
authors.lastname: Partanen
authors.forename: T
authors.initials: T
authors.lastname: Tuomi