title: Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.
abstract: The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany. steffen.breuer@pdi-berlin.de
authors.forename: Steffen
authors.initials: S
authors.lastname: Breuer
authors.forename: Carsten
authors.initials: C
authors.lastname: Pfüller
authors.forename: Timur
authors.initials: T
authors.lastname: Flissikowski
authors.forename: Oliver
authors.initials: O
authors.lastname: Brandt
authors.forename: Holger T
authors.initials: HT
authors.lastname: Grahn
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert