title: Localized States and resultant band bending in graphene antidot superlattices.
abstract: We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically backgated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.
authors.affiliation: Department of Physics, Stevens Institute of Technology , Hoboken, New Jersey 07030, United States.
authors.forename: Milan
authors.initials: M
authors.lastname: Begliarbekov
authors.forename: Onejae
authors.initials: O
authors.lastname: Sul
authors.forename: John
authors.initials: J
authors.lastname: Santanello
authors.forename: Nan
authors.initials: N
authors.lastname: Ai
authors.forename: Xi
authors.initials: X
authors.lastname: Zhang
authors.forename: Eui-Hyeok
authors.initials: EH
authors.lastname: Yang
authors.forename: Stefan
authors.initials: S
authors.lastname: Strauf