title: Photoluminescence imaging of focused ion beam induced individual quantum dots.
abstract: We report on scanning microphotoluminescence measurements that spectrally and spatially resolve emission from individual InAs quantum dots that were induced by focused ion beam patterning. Multilayers of quantum dots were spaced 2 μm apart, with a minimum single dot emission line width of 160 μeV, indicating good optical quality for dots patterned using this technique. Mapping 16 array sites, at least 65% were occupied by optically active dots and the spectral inhomogeneity was within 30 meV.
authors.affiliation: Department of Physics and ‡Department of Materials Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States.
authors.forename: Jieun
authors.initials: J
authors.lastname: Lee
authors.forename: Timothy W
authors.initials: TW
authors.lastname: Saucer
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Martin
authors.forename: Deborah
authors.initials: D
authors.lastname: Tien
authors.forename: Joanna M
authors.initials: JM
authors.lastname: Millunchick
authors.forename: Vanessa
authors.initials: V
authors.lastname: Sih