title: On-nanowire band-graded Si:Ge photodetectors.
authors.affiliation: Department of Materials Science and Engineering, Pohang University of Science and Technology, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk, Korea.
authors.forename: Cheol-Joo
authors.initials: CJ
authors.lastname: Kim
authors.forename: Hyun-Seung
authors.initials: HS
authors.lastname: Lee
authors.forename: Yong-Jun
authors.initials: YJ
authors.lastname: Cho
authors.forename: Jee-Eun
authors.initials: JE
authors.lastname: Yang
authors.forename: Ru Ri
authors.initials: RR
authors.lastname: Lee
authors.forename: Ja Kyung
authors.initials: JK
authors.lastname: Lee
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Jo
mesh_terms: D004553:Electric Conductivity; D005857:Germanium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*
chemical_list: D005857:Germanium; D012825:Silicon