title: Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, California 94305, USA.
authors.forename: Young Min
authors.initials: YM
authors.lastname: Park
authors.forename: Jürgen
authors.initials: J
authors.lastname: Daniel
authors.forename: Martin
authors.initials: M
authors.lastname: Heeney
authors.forename: Alberto
authors.initials: A
authors.lastname: Salleo
mesh_terms: D017097:Electric Impedance; D009930:Organic Chemicals / Q000737:chemistry*; D044367:Phase Transition; D013696:Temperature; D014173:Transistors, Electronic; D014466:Ultraviolet Rays; D015040:Zirconium / Q000737:chemistry*
chemical_list: D009930:Organic Chemicals; D015040:Zirconium; C028541:zirconium oxide