title: Soluble fullerene-based n-channel organic thin-film transistors printed by using a polydimethylsiloxane stamp.
abstract: A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free energy. We used [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) and C(60)-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) as n-channel materials. The stamped thin-film transistors of C60MC12 achieved a high electron mobility of 0.39 cm(2)/(V s) and a current on-off ratio of 1 × 10(7). The mobility of the stamped C60MC12 thin-film transistors did not depend much on the surface free energy of the SiO(2) gate insulator with and without surface treatment using a silane-coupling reagent. In particular, the stamped C60MC12 thin-film transistor exhibited a relatively high mobility of 0.1 cm(2)/(V s) on a high energy surface of untreated SiO(2). In addition, a complementary inverter composed of an n-channel and a p-channel stamped thin-film transistor was demonstrated for the first time, which exhibits a maximum gain of 63 at a supply voltage of 50 V.
authors.affiliation: Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan.
authors.forename: Yoshinori
authors.initials: Y
authors.lastname: Horii
authors.forename: Mitsuhiro
authors.initials: M
authors.lastname: Ikawa
authors.forename: Masayuki
authors.initials: M
authors.lastname: Chikamatsu
authors.forename: Reiko
authors.initials: R
authors.lastname: Azumi
authors.forename: Masahiko
authors.initials: M
authors.lastname: Kitagawa
authors.forename: Hisatoshi
authors.initials: H
authors.lastname: Konishi
authors.forename: Kiyoshi
authors.initials: K
authors.lastname: Yase
mesh_terms: D003460:Crystallization / Q000379:methods*; D004129:Dimethylpolysiloxanes / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D037741:Fullerenes / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D036103:Nanotechnology / Q000379:methods*; D009930:Organic Chemicals / Q000737:chemistry*; D012995:Solubility; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D004129:Dimethylpolysiloxanes; D037741:Fullerenes; D008567:Membranes, Artificial; D009930:Organic Chemicals; C528539:poly(dimethyldiphenylsiloxane)