title: Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.
abstract: We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1 × 10(11) cm(-2) and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C(0), defined as the Auger coefficient at low excitation, are 6.1 × 10(-32) and 4.1 × 10(-33) cm(6)·s(-1) in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm(2).
authors.affiliation: Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States.
authors.forename: Wei
authors.initials: W
authors.lastname: Guo
authors.forename: Meng
authors.initials: M
authors.lastname: Zhang
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
authors.forename: Junseok
authors.initials: J
authors.lastname: Heo
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009584:Nitrogen / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D009584:Nitrogen