title: Dark field electron holography for strain measurement.
abstract: Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a transmission electron microscope and obtain dark field holograms as well as the theoretical background necessary to reconstruct strain maps from holograms. A series of experimental parameters such as biprism voltage, sample thickness, exposure time, tilt angle and choice of diffracted beam are then investigated on a silicon-germanium layer epitaxially embedded in a silicon matrix in order to obtain optimal dark field holograms over a large field of view with good spatial resolution and strain sensitivity.
authors.affiliation: CEA-Grenoble, INAC/SP2M/LEMMA, F-38054 Grenoble, France. armand.beche@fei.com
authors.forename: A
authors.initials: A
authors.lastname: Béché
authors.forename: J L
authors.initials: JL
authors.lastname: Rouvière
authors.forename: J P
authors.initials: JP
authors.lastname: Barnes
authors.forename: D
authors.initials: D
authors.lastname: Cooper