title: Mimicking both petal and lotus effects on a single silicon substrate by tuning the wettability of nanostructured surfaces.
abstract: We describe a new method of fabricating large-area, highly scalable, "hybrid" superhydrophobic surfaces on silicon (Si) substrates with tunable, spatially selective adhesion behavior by controlling the morphologies of Si nanowire arrays. Gold (Au) nanoparticles were deposited on Si by glancing-angle deposition, followed by metal-assisted chemical etching of Si to form Si nanowire arrays. These surfaces were chemically modified and rendered hydrophobic by fluorosilane deposition. Au nanoparticles with different size distributions resulted in the synthesis of Si nanowires with very different morphologies (i.e., clumped and straight nanowire surfaces). The difference in nanowire morphology is attributed to capillary force-induced nanocohesion, which is due to the difference in nanowire porosity. The clumped nanowire surface demonstrated the lotus effect, and the straighter nanowires demonstrated the ability to pin water droplets while maintaining large contact angles (i.e., the petal effect). The high contact angles in both cases are explained by invoking the Cassie-Baxter wetting state. The high adhesion behavior of the straight nanowire surface may be explained by a combination of attractive van der Waals forces and capillary adhesion. We demonstrate the spatial patterning of both low- and high-adhesion superhydrophobicity on the same substrate by the simultaneous synthesis of clumped and straight silicon nanowires. The demonstration of hybrid superhydrophobic surfaces with spatially selective, tunable adhesion behavior on single substrates paves the way for future applications in microfluidic channels, substrates for biologically and chemically based analysis and detection where it is necessary to analyze a particular droplet in a defined location on a surface, and as a platform to study in situ chemical mixing and interfacial reactions of liquid pearls.
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.
authors.forename: M K
authors.initials: MK
authors.lastname: Dawood
authors.forename: H
authors.initials: H
authors.lastname: Zheng
authors.forename: T H
authors.initials: TH
authors.lastname: Liew
authors.forename: K C
authors.initials: KC
authors.lastname: Leong
authors.forename: Y L
authors.initials: YL
authors.lastname: Foo
authors.forename: R
authors.initials: R
authors.lastname: Rajagopalan
authors.forename: S A
authors.initials: SA
authors.lastname: Khan
authors.forename: W K
authors.initials: WK
authors.lastname: Choi
mesh_terms: D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D017155:Wettability
chemical_list: D012825:Silicon