title: Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency.
abstract: The various surface texturing effects of InGaN light emitting diodes (LEDs) have been investigated by comparison of experimented data and simulated data. The single-layer and double-layer texturing were performed with the help of ITO nanospheres using wet etching, where the ITO ohmic contact layer and the p-GaN layer are textured using ITO nanospheres as an etch mask. In case of single-layer texturing, p-type GaN layer texturing was more effective than ITO ohmic contact layer texturing. The maximum enhancement of wall-plug efficiency of double-layered textured LEDs is 40% more than conventional LEDs, after packaging at an injected current of 20 mA. The increase of light scattering at the textured GaN surfaces is a major reason for increasing the light extraction efficiency of LEDs.
authors.affiliation: School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea.
authors.forename: Ji Hye
authors.initials: JH
authors.lastname: Kang
authors.forename: Jae Hyoung
authors.initials: JH
authors.lastname: Ryu
authors.forename: Hyun Kyu
authors.initials: HK
authors.lastname: Kim
authors.forename: Hee Yun
authors.initials: HY
authors.lastname: Kim
authors.forename: Nam
authors.initials: N
authors.lastname: Han
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Park
authors.forename: Periyayya
authors.initials: P
authors.lastname: Uthirakumar
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong