title: Disordered electrical potential observed on the surface of SiO2 by electric field microscopy.
abstract: The electrical potential on the surface of ∼300 nm thick SiO(2) grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 µm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.
authors.affiliation: Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas, Madrid, Spain.
authors.forename: N
authors.initials: N
authors.lastname: García
authors.forename: Zang
authors.initials: Z
authors.lastname: Yan
authors.forename: A
authors.initials: A
authors.lastname: Ballestar
authors.forename: J
authors.initials: J
authors.lastname: Barzola-Quiquia
authors.forename: F
authors.initials: F
authors.lastname: Bern
authors.forename: P
authors.initials: P
authors.lastname: Esquinazi