title: Analytical model for depletion-based silicon modulator simulation.
abstract: An original method to simulate depletion-based silicon modulators based on an analytical description of the active region is presented. This method is fast and efficient in particular for performance optimization. It is applied for a lateral diode integrated in a rib waveguide, and a comparison is performed with classical 2D numerical simulation. A very good agreement is obtained, showing the accuracy and efficiency of this analytical method.
authors.affiliation: Institut d’Electronique Fondamentale, University Paris Sud, CNRS, bât. 220, 91405 ORSAY Cedex, France.
authors.forename: G
authors.initials: G
authors.lastname: Rasigade
authors.forename: D
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: M
authors.initials: M
authors.lastname: Ziebell
authors.forename: E
authors.initials: E
authors.lastname: Cassan
authors.forename: L
authors.initials: L
authors.lastname: Vivien
mesh_terms: D003198:Computer Simulation; D008027:Light; D008956:Models, Chemical; D012031:Refractometry / Q000379:methods*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon