title: Nonvolatile resistive switching in single crystalline ZnO nanowires.
abstract: We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories.
authors.affiliation: Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: Yuchao
authors.initials: Y
authors.lastname: Yang
authors.forename: Xiaoxian
authors.initials: X
authors.lastname: Zhang
authors.forename: Min
authors.initials: M
authors.lastname: Gao
authors.forename: Fei
authors.initials: F
authors.lastname: Zeng
authors.forename: Weiya
authors.initials: W
authors.lastname: Zhou
authors.forename: Sishen
authors.initials: S
authors.lastname: Xie
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
mesh_terms: D017097:Electric Impedance; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide