title: Study of dynamic processes on semiconductor surfaces using time-resolved scanning tunneling microscopy.
abstract: The time resolution of a conventional scanning tunneling microscope can be improved by many orders of magnitude by recording open feedback loop current-time traces. The enhanced time resolution comes, however, at the expense of the ability to obtain spatial information. In this paper, we first consider the Ge(111)-c(2 × 8) surface as an example of how surface dynamics can show up in conventional STM images. After a brief introduction to the time-resolved scanning tunneling microscopy technique, its capabilities will be demonstrated by addressing the dynamics of a dimer pair of a Pt modified Ge(001).
authors.affiliation: Physical Aspects of Nanoelectronics and Solid State Physics, MESA+  Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Amirmehdi
authors.initials: A
authors.lastname: Saedi
authors.forename: Bene
authors.initials: B
authors.lastname: Poelsema
authors.forename: Harold J W
authors.initials: HJ
authors.lastname: Zandvliet
mesh_terms: D003198:Computer Simulation; D005857:Germanium / Q000737:chemistry*; D007700:Kinetics; D016252:Microscopy, Scanning Tunneling / Q000295:instrumentation* / Q000379:methods; D010984:Platinum / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties; D013997:Time Factors
chemical_list: D005857:Germanium; D010984:Platinum