title: High-performance programmable memory devices based on co-doped BaTiO3.
authors.affiliation: Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Zhibo
authors.initials: Z
authors.lastname: Yan
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Guo
authors.forename: Guoquan
authors.initials: G
authors.lastname: Zhang
authors.forename: J-M
authors.initials: JM
authors.lastname: Liu
mesh_terms: D017609:Barium Compounds / Q000737:chemistry*; D003035:Cobalt / Q000737:chemistry*; D012666:Semiconductors; D014025:Titanium / Q000737:chemistry*
chemical_list: D017609:Barium Compounds; C024547:barium titanate(IV); D003035:Cobalt; D014025:Titanium