title: GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.
abstract: We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.
authors.affiliation: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan. shindou.t.aa@m.titech.ac.jp
authors.forename: Takahiko
authors.initials: T
authors.lastname: Shindo
authors.forename: Tadashi
authors.initials: T
authors.lastname: Okumura
authors.forename: Hitomi
authors.initials: H
authors.lastname: Ito
authors.forename: Takayuki
authors.initials: T
authors.lastname: Koguchi
authors.forename: Daisuke
authors.initials: D
authors.lastname: Takahashi
authors.forename: Yuki
authors.initials: Y
authors.lastname: Atsumi
authors.forename: Joonhyun
authors.initials: J
authors.lastname: Kang
authors.forename: Ryo
authors.initials: R
authors.lastname: Osabe
authors.forename: Tomohiro
authors.initials: T
authors.lastname: Amemiya
authors.forename: Nobuhiko
authors.initials: N
authors.lastname: Nishiyama
authors.forename: Shigehisa
authors.initials: S
authors.lastname: Arai
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005246:Feedback; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008567:Membranes, Artificial; D010720:Phosphines / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: D001152:Arsenicals; D008567:Membranes, Artificial; D010720:Phosphines; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C090882:indium phosphide; D012825:Silicon