title: Electronic structure of Bi lines on clean and H-passivated Si(100).
abstract: By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.
authors.affiliation: National Research Institute for Materials Science, Tsukuba 305-0044, Japan. jakub.javorsky@post.cz
authors.forename: Jakub
authors.initials: J
authors.lastname: Javorský
authors.forename: James Hugh Gervase
authors.initials: JH
authors.lastname: Owen
authors.forename: Martin
authors.initials: M
authors.lastname: Setvín
authors.forename: Kazushi
authors.initials: K
authors.lastname: Miki