title: GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.
abstract: Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.
authors.affiliation: Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia. magondal@kfupm.edu.sa
authors.forename: Mohammed A
authors.initials: MA
authors.lastname: Gondal
authors.forename: Xiao F
authors.initials: XF
authors.lastname: Chang
authors.forename: Zain H
authors.initials: ZH
authors.lastname: Yamani
authors.forename: Guo F
authors.initials: GF
authors.lastname: Yang
authors.forename: Guang B
authors.initials: GB
authors.lastname: Ji
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D002384:Catalysis / Q000528:radiation effects; D005708:Gallium / Q000737:chemistry*; D007834:Lasers; D010777:Photochemistry; D012235:Rhodamines / Q000737:chemistry*; D018508:Water Purification / Q000379:methods*
chemical_list: D012235:Rhodamines; C473348:gallium nitride; C022027:lissamine rhodamine B; D005708:Gallium; D000537:Aluminum Oxide