title: A phenomenological approach to the anisotropic magnetoresistance and planar Hall effect in tetragonal La(2/3)Ca(1/3)MnO3 thin films.
abstract: A La(2/3)Ca(1/3)MnO(3) Hall bar with its long dimension roughly along the hard axis [110] was fabricated on a single-crystal-like tensilely strained film on SrTiO(3)(001). The anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) have been studied at various external magnetic fields and temperatures. A phenomenological model in the high field limit is developed, and the galvanomagnetic tensor based on a tetragonal symmetry 4/mmm (D(4h)), applicable to epitaxial films on a substrate, has been obtained by expanding the tensor to the sixth order. The derived in-plane transverse resistance R(xy) shows a sin2φ(M) angular dependence, while the longitudinal R(xx) is constituted by not only a two-fold cos2φ(M) term, but also a four-fold cos4φ(M) term due to the square symmetry of the lattice. The model is in good agreement with the experimental results in high fields, while deviations are observed near the {100} easy axis with the decreasing field. Close inspection of the fitting parameters reveals the evolution of these term weights with temperature and magnetic field, which is distinct from conventional ferromagnetic metals and cannot be explained by the phenomenological model. An alternative mechanism for AMR, stemming from the magnetization-induced local orbit deformation through spin-orbit interaction, as previously proposed by O'Donnell et al, may be prevalent in manganites and other systems of complicated crystal structure.
authors.affiliation: National Laboratory for Superconductivity, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. lijie@ssc.iphy.ac.cn
authors.forename: J
authors.initials: J
authors.lastname: Li
authors.forename: S L
authors.initials: SL
authors.lastname: Li
authors.forename: Z W
authors.initials: ZW
authors.lastname: Wu
authors.forename: S
authors.initials: S
authors.lastname: Li
authors.forename: H F
authors.initials: HF
authors.lastname: Chu
authors.forename: J
authors.initials: J
authors.lastname: Wang
authors.forename: Y
authors.initials: Y
authors.lastname: Zhang
authors.forename: H Y
authors.initials: HY
authors.lastname: Tian
authors.forename: D N
authors.initials: DN
authors.lastname: Zheng