title: Anderson transition in disordered bilayer graphene.
abstract: Employing the kernel polynomial method (KPM), we study the electronic properties of the graphene bilayers with Bernal stacking in the presence of diagonal disorder, within the tight-binding approximation and nearest neighbor interactions. The KPM method enables us to calculate local density of states (LDOS) without the need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that this model undergoes an Anderson metal-insulator transition at a critical value of disorder strength.
authors.affiliation: Department of Physics, Isfahan University of Technology, Isfahan, Iran.
authors.forename: M H
authors.initials: MH
authors.lastname: Zare
authors.forename: Mohsen
authors.initials: M
authors.lastname: Amini
authors.forename: Farhad
authors.initials: F
authors.lastname: Shahbazi
authors.forename: S A
authors.initials: SA
authors.lastname: Jafari