title: Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice.
abstract: Laterally electrically-pumped Si light-emitting diodes (LEDs) based on truncated nanocrystalline-Si (nc-Si)/SiO2 quantum wells are fabricated with complementary-metal-semiconductor-oxide (CMOS) process. Visible electroluminescence (EL) can be observed under a reverse bias larger than ~6 V. The light emission would probably originate from the spontaneous hot-carrier relaxations within the conduction and the valance bands when the device is sufficiently reverse-biased. The EL spectral profile is found to be modulated by varying structure parameters of the interdigitated finger electrodes. Up to ~20 times EL intensity enhancement is achieved as compared to vertical-current-injection LED prepared using the same material system. Based on the lateral-current-injection scheme, a Si/SiO2 MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-µm are proposed.
authors.affiliation: Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, 117685 Singapore. dingl@ime.a-star.edu.sg
authors.forename: L
authors.initials: L
authors.lastname: Ding
authors.forename: M B
authors.initials: MB
authors.lastname: Yu
authors.forename: Xiaoguang
authors.initials: X
authors.lastname: Tu
authors.forename: G Q
authors.initials: GQ
authors.lastname: Lo
authors.forename: S
authors.initials: S
authors.lastname: Tripathy
authors.forename: T P
authors.initials: TP
authors.lastname: Chen
mesh_terms: D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D012822:Silicon Dioxide