title: Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors.
abstract: We demonstrate lithographically fabricated Si nanowire field effect transistors (FETs) with long Si nanowires of tiny cross sectional size (∼3-5 nm) exhibiting high performance without employing complementarily doped junctions or high channel doping. These nanowire FETs show high peak hole mobility (as high as over 1200 cm(2)/(V s)), current density, and drive current as well as low drain leakage current and high on/off ratio. Comparison of nanowire FETs with nanobelt FETs shows enhanced performance is a result of significant quantum confinement in these 3-5 nm wires. This study suggests simple (no additional doping) FETs using tiny top-down nanowires can deliver high performance for potential impact on both CMOS scaling and emerging applications such as biosensing.
authors.affiliation: Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States.
authors.forename: Krutarth
authors.initials: K
authors.lastname: Trivedi
authors.forename: Hyungsang
authors.initials: H
authors.lastname: Yuk
authors.forename: Herman Carlo
authors.initials: HC
authors.lastname: Floresca
authors.forename: Moon J
authors.initials: MJ
authors.lastname: Kim
authors.forename: Walter
authors.initials: W
authors.lastname: Hu
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D010781:Photography / Q000379:methods*; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012825:Silicon