title: The conduction gap in double gate bilayer graphene structures.
abstract: Using the nonequilibrium Green function method, the electrical behavior of a double gate bilayer graphene structure is investigated. Due to energy bandgap opening when potential energies in the layers are different, a clear gap of electrical current is observed. The sensitivity of this phenomenon to device parameters (gate length, temperature) has been considered systematically. It appears that the threshold voltage can be controlled by tuning the gate voltages and/or the Fermi energy. Our obtained results may be useful and provide new suggestions for further experimental investigations.
authors.affiliation: Institut d'Electronique Fondamentale, UMR8622, CNRS, Université Paris Sud, 91405 Orsay, France. viet-hung.nguyen@u-psud.fr
authors.forename: V Hung
authors.initials: VH
authors.lastname: Nguyen
authors.forename: A
authors.initials: A
authors.lastname: Bournel
authors.forename: P
authors.initials: P
authors.lastname: Dollfus