title: GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser.
abstract: A GaAs-based surface-normal optical modulator using the free-carrier effect is demonstrated for the first time to our knowledge. The device exhibits ~43% modulation depth compared to 24% for a previously demonstrated Si-based device with twice the interaction length. Simulations predict ~1.8 times the speeds for GaAs-based devices compared to Si. Operation in conjunction with a supercontinuum source is used to characterize the wavelength response of the modulator. Potential for colorless operation makes the modulator a candidate for wavelength-division multiplexed networks with broadband light sources.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA. ojaspk@umich.edu
authors.forename: Ojas P
authors.initials: OP
authors.lastname: Kulkarni
authors.forename: Mohammed N
authors.initials: MN
authors.lastname: Islam
authors.forename: Fred L
authors.initials: FL
authors.lastname: Terry
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007834:Lasers; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D012825:Silicon