title: Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot.
abstract: We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.
authors.affiliation: Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA. verma@nist.gov
authors.forename: V B
authors.initials: VB
authors.lastname: Verma
authors.forename: Martin J
authors.initials: MJ
authors.lastname: Stevens
authors.forename: K L
authors.initials: KL
authors.lastname: Silverman
authors.forename: N L
authors.initials: NL
authors.lastname: Dias
authors.forename: A
authors.initials: A
authors.lastname: Garg
authors.forename: J J
authors.initials: JJ
authors.lastname: Coleman
authors.forename: R P
authors.initials: RP
authors.lastname: Mirin
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D017785:Photons; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide