title: Ultra-low-loss high-aspect-ratio Si3N4 waveguides.
abstract: We characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for a 0.5 mm bend radius down to 3 dB/m for a 2 mm bend radius are measured with ring resonator and optical frequency domain reflectometry techniques. From a waveguide loss model that agrees well with experimental results, we project that 0.1 dB/m total propagation loss is achievable at a 7 mm bend radius with this approach.
authors.affiliation: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA. jbauters@ece.ucsb.edu
authors.forename: Jared F
authors.initials: JF
authors.lastname: Bauters
authors.forename: Martijn J R
authors.initials: MJ
authors.lastname: Heck
authors.forename: Demis
authors.initials: D
authors.lastname: John
authors.forename: Daoxin
authors.initials: D
authors.lastname: Dai
authors.forename: Ming-Chun
authors.initials: MC
authors.lastname: Tien
authors.forename: Jonathon S
authors.initials: JS
authors.lastname: Barton
authors.forename: Arne
authors.initials: A
authors.lastname: Leinse
authors.forename: René G
authors.initials: RG
authors.lastname: Heideman
authors.forename: Daniel J
authors.initials: DJ
authors.lastname: Blumenthal
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers