title: Depth-selective structural analysis of thin films using total-external-reflection x-ray diffraction.
abstract: Total-external-reflection (TER) x-ray diffraction is the depth-sensitive technique for evaluating layered structures, including epitaxial heterostructures, ion-doped bulk crystals and several quantum-well structures. This technique can control the depth of observation by changing both incident and exit angles of x-rays from the surface. In this review, the principle of the TER technique and measurement apparatus are briefly described, and applications of layered-semiconductor samples evaluated using the TER technique are introduced.
authors.affiliation: Nichia Corporation, Yokohama Technology Center, 13-19-3 Moriya, Kanagawa, Yokohama, Kanagawa 221-0022, Japan. tomoaki.kawamura@nichia.co.jp
authors.forename: Tomoaki
authors.initials: T
authors.lastname: Kawamura
authors.forename: Hiroo
authors.initials: H
authors.lastname: Omi
mesh_terms: D000465:Algorithms; D008422:Materials Testing / Q000379:methods*; D008567:Membranes, Artificial; D033363:Neutron Diffraction / Q000379:methods*; D014961:X-Ray Diffraction / Q000379:methods*
chemical_list: D008567:Membranes, Artificial