title: Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction.
abstract: Strain can reduce carrier mobility and the reliability of electronic devices and affect the growth mode of thin films and the stability of nanometer-scale crystals. To control lattice strain, a technique for measuring the minute lattice strain at surfaces and interfaces is needed. Recently, an extremely asymmetric x-ray diffraction method has been developed for this purpose. By employing Darwin's dynamical x-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. In this paper, we review our quantitative strain analysis studies on native SiO(2)/Si interfaces, reconstructed Si surfaces, Ni/Si(111)-H interfaces, sputtered III-V compound semiconductor surfaces, high-k/Si interfaces, and Au ion-implanted Si.
authors.affiliation: Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan. akimoto@nagoya-u.jp
authors.forename: Koichi
authors.initials: K
authors.lastname: Akimoto
authors.forename: Takashi
authors.initials: T
authors.lastname: Emoto
mesh_terms: D003198:Computer Simulation; D055119:Elastic Modulus; D008422:Materials Testing / Q000379:methods*; D008956:Models, Chemical; D013499:Surface Properties; D014961:X-Ray Diffraction / Q000379:methods*