title: Semiconducting behavior of type-I Si clathrate K8Ga8Si38.
abstract: A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.
authors.affiliation: National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. IMAI.Motoharu@nims.go.jp
authors.forename: Motoharu
authors.initials: M
authors.lastname: Imai
authors.forename: Akira
authors.initials: A
authors.lastname: Sato
authors.forename: Haruhiko
authors.initials: H
authors.lastname: Udono
authors.forename: Yoji
authors.initials: Y
authors.lastname: Imai
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Tajima