title: Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 × 1 interface from Si KLV Auger spectroscopy.
abstract: An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 × 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.
authors.affiliation: Surface Science Research Centre and Department of Physics, University of Liverpool, Liverpool L69 3BX, UK.
authors.forename: P
authors.initials: P
authors.lastname: Unsworth
authors.forename: P
authors.initials: P
authors.lastname: Weightman