title: Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure.
abstract: We have studied the effect of low energy (30 keV) electron beam exposure on carbon nanotube field-effect transistors, using an electron beam lithography system to provide spatially controlled dosage. We show that reversible tuning of the transport behavior is possible when a backgate potential is applied during exposure. n-type behavior can be obtained by electron beam exposure of a device with positive gate bias, while ambipolar behavior can be obtained via negative gate bias. The observed transport behavior is relatively stable in time. We propose possible mechanisms for the observed phenomena and suggest directions for further research.
authors.affiliation: Department of Physics, University of Virginia, Charlottesville, VA 22904, USA.
authors.forename: Jack
authors.initials: J
authors.lastname: Chan
authors.forename: Brian
authors.initials: B
authors.lastname: Burke
authors.forename: Michael
authors.initials: M
authors.lastname: Cabral
authors.forename: Chong
authors.initials: C
authors.lastname: Hu
authors.forename: Joe
authors.initials: J
authors.lastname: Campbell
authors.forename: Lloyd
authors.initials: L
authors.lastname: Harriott
authors.forename: Keith A
authors.initials: KA
authors.lastname: Williams
mesh_terms: D004579:Electron Transport; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon