title: Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.
abstract: Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured by the x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that the x-ray CTR scattering measurements and analyses give us correct composition profiles both for group-III and group-V atoms in the buried heterostructures non-destructively. Limits of the CTR analysis are discussed, especially on the spatial resolution and composition grading below the bottom interface.
authors.affiliation: Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp
authors.forename: Yoshikazu
authors.initials: Y
authors.lastname: Takeda
authors.forename: Masao
authors.initials: M
authors.lastname: Tabuchi
authors.forename: Arao
authors.initials: A
authors.lastname: Nakamura
mesh_terms: D001151:Arsenic / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods*; D016252:Microscopy, Scanning Tunneling / Q000379:methods*; D010720:Phosphines / Q000737:chemistry*; D014961:X-Ray Diffraction / Q000379:methods*
chemical_list: D010720:Phosphines; D007204:Indium; D005708:Gallium; D001151:Arsenic; C090882:indium phosphide