title: Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
abstract: We report on the effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes (LEDs). The silica nanospehres were coated on the selectively etched GaN using a spin-coating method. With the embedded silica nanospheres structures, we achieved a smaller reverse leakage current due to the selective defect blocking-induced crystal quality improvement. Moreover, the reflectance spectra show strong reflectance modulations due to the different refractive indices between the GaN and silica nanospheres. By using confocal scanning electroluminescence microscopy, a strong light emission from silica nanospheres demonstrates that the silica nanospheres acted as a reflector. We found that the optimized embedded silica nanospheres structure, whose the average size of the etched pits was about 3.5 μm and EPD was 3 x 10(7) cm(-2), could enhance light output power by a factor of 2.23 due to enhanced the probability of light scattering at silica nanospheres.
authors.affiliation: School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea.
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Park
authors.forename: Hee Yun
authors.initials: HY
authors.lastname: Kim
authors.forename: Jae Hyoung
authors.initials: JH
authors.lastname: Ryu
authors.forename: Hyun Kyu
authors.initials: HK
authors.lastname: Kim
authors.forename: Ji Hye
authors.initials: JH
authors.lastname: Kang
authors.forename: Nam
authors.initials: N
authors.lastname: Han
authors.forename: Min
authors.initials: M
authors.lastname: Han
authors.forename: Hyun
authors.initials: H
authors.lastname: Jeong
authors.forename: Mun Seok
authors.initials: MS
authors.lastname: Jeong
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D054118:Nanospheres / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D007204:Indium; C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium; C513701:indium nitride