title: Electrical properties and far infrared optical conductivity of boron-doped single-walled carbon nanotube films.
abstract: Here we report a new approach for producing clean and homogeneous boron-doped single-walled carbon nanotubes. This approach combines the homogeneous dispersion of B(n)O(m)(+) ionic molecules over the nanotube surfaces in a liquid solution, with a high temperature chemical reaction that incorporates the boron atoms into the sp(2) carbon network of the nanotube wall. A comparative study of sheet resistance versus optical transmission in nanotube network films with and without boron-doping is also presented. Although electron energy loss spectroscopy revealed very low B-doping levels (<1 at.%), the dc conductivity of doped samples was raised by a factor of 3.4. Changes in the free carrier contribution to the optical conductivity of single-walled carbon nanotube (SWCNT) films induced by boron-doping was also studied via optical transmission in the far-infrared (IR) (50-7000 cm(-1)). A Drude model was fitted to the changes in the far-IR conductivity to quantify the additional free carrier concentration induced by the B-doping.
authors.affiliation: Department of Physics, Pennsylvania State University, University Park, PA 16802, USA.
authors.forename: X M
authors.initials: XM
authors.lastname: Liu
authors.forename: H R
authors.initials: HR
authors.lastname: Gutiérrez
authors.forename: P C
authors.initials: PC
authors.lastname: Eklund
mesh_terms: D001895:Boron / Q000737:chemistry*; D003198:Computer Simulation; D004553:Electric Conductivity; D007259:Infrared Rays; D008422:Materials Testing; D008567:Membranes, Artificial; D008956:Models, Chemical; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D012031:Refractometry
chemical_list: D008567:Membranes, Artificial; D037742:Nanotubes, Carbon; D001895:Boron