title: Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs-Ga(1-x)Al(x)As cylindrical quantum-well wires.
abstract: The influence of an intense laser field on shallow-donor states in cylindrical GaAs-Ga(1-x)Al(x)As quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p(±) excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.
authors.affiliation: Instituto Tecnológico Metropolitano, Medellín, Colombia.
authors.forename: F E
authors.initials: FE
authors.lastname: López
authors.forename: E
authors.initials: E
authors.lastname: Reyes-Gómez
authors.forename: N
authors.initials: N
authors.lastname: Porras-Montenegro
authors.forename: H S
authors.initials: HS
authors.lastname: Brandi
authors.forename: L E
authors.initials: LE
authors.lastname: Oliveira