title: Analysis of EEL spectrum of low-loss region using the C(s)-corrected STEM-EELS method and multivariate analysis.
abstract: We analyzed a Si/SiO(2) interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy-electron energy loss spectroscopy which is characterized by using the electron energy loss spectrum of the low-loss region. We extracted the low-loss spectra of Si, SiO(2) and an interface state. Even if the interface is formed from materials with different dielectric functions, the present method will prove suitable for obtaining a more quantitative understanding of the dielectric characteristic.
authors.affiliation: Device & Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan. yamazakit@jp.fujitsu.com
authors.forename: Takashi
authors.initials: T
authors.lastname: Yamazaki
authors.forename: Yasutoshi
authors.initials: Y
authors.lastname: Kotaka
authors.forename: Yuji
authors.initials: Y
authors.lastname: Kataoka