title: Engineering the electronic band structure for multiband solar cells.
abstract: Using the unique features of the electronic band structure of GaN(x)As(1-x) alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.
authors.affiliation: Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.
authors.forename: N
authors.initials: N
authors.lastname: López
authors.forename: L A
authors.initials: LA
authors.lastname: Reichertz
authors.forename: K M
authors.initials: KM
authors.lastname: Yu
authors.forename: K
authors.initials: K
authors.lastname: Campman
authors.forename: W
authors.initials: W
authors.lastname: Walukiewicz