title: Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001).
abstract: Interdiffusion during growth of Fe on As-rich GaAs(001) substrates has been investigated by real time stress measurements. Compared to Ga-rich GaAs(001), interdiffusion processes are decisively reduced. The optimum growth temperature (characterized by abrupt interfaces, pseudomorphic growth and negligible intermixing) is found to lie below 50 °C. At higher growth temperatures interdiffusion effects increase and eventually lead to the formation of a compact crystalline alloy layer of presumably Fe(2 + x)Ga(1 - x), as evidenced by transmission electron microscopy and x-ray diffraction.
authors.affiliation: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Altenbergerstrasse 69, A-4040 Linz, Austria.
authors.forename: T
authors.initials: T
authors.lastname: Ashraf
authors.forename: C
authors.initials: C
authors.lastname: Gusenbauer
authors.forename: J
authors.initials: J
authors.lastname: Stangl
authors.forename: G
authors.initials: G
authors.lastname: Hesser
authors.forename: M
authors.initials: M
authors.lastname: Wegscheider
authors.forename: R
authors.initials: R
authors.lastname: Koch