title: Vibration amplification, damping, and self-oscillations in micromechanical resonators induced by optomechanical coupling through carrier excitation.
abstract: Carrier-induced dynamic backaction in micromechanical resonators is demonstrated. Thermal vibration of an n-GaAs/i-GaAs bilayer cantilever is amplified by optical band-gap excitation, and for the excitation power above a critical value, self-oscillations are induced. These phenomena are found in the [1[over ¯]10]-oriented cantilever, whereas the damping (deamplification) is observed in the [1[over ¯]10] orientation. This optomechanical coupling does not require any optical cavities but is instead based on the piezoelectric effect that is generated by photoinduced carriers.
authors.affiliation: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan. hajime@nttbrl.jp
authors.forename: Hajime
authors.initials: H
authors.lastname: Okamoto
authors.forename: Daisuke
authors.initials: D
authors.lastname: Ito
authors.forename: Koji
authors.initials: K
authors.lastname: Onomitsu
authors.forename: Haruki
authors.initials: H
authors.lastname: Sanada
authors.forename: Hideki
authors.initials: H
authors.lastname: Gotoh
authors.forename: Tetsuomi
authors.initials: T
authors.lastname: Sogawa
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Yamaguchi
mesh_terms: D001152:Arsenicals / Q000737:chemistry; D005708:Gallium / Q000737:chemistry; D055595:Mechanical Phenomena; D055616:Microtechnology / Q000379:methods*; D055620:Optical Phenomena; D017785:Photons; D013696:Temperature; D014732:Vibration
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium