title: Nitrogen and argon doped zinc oxide.
abstract: In this work argon and nitrogen were implanted into ZnO single crystals in order to compare the influence of these non-magnetic elements in the magnetic and electrical behaviour of zinc oxide. The results indicate that both nitrogen and argon implantations induce magnetic defects in ZnO, although these do not remain stable upon annealing. The comparison between the electrical behaviour of argon and nitrogen implanted crystals indicates that mobile charge carriers exist in the argon implanted sample after annealing, but were not detected in the nitrogen implanted sample.
authors.affiliation: Centro de Física da Matéria Condensada da Universidade de Lisboa, Campo Grande, Lisboa, Portugal.
authors.forename: C
authors.initials: C
authors.lastname: Silva
authors.forename: A R G
authors.initials: AR
authors.lastname: Costa
authors.forename: M M
authors.initials: MM
authors.lastname: Cruz
authors.forename: R C
authors.initials: RC
authors.lastname: da Silva
authors.forename: R P
authors.initials: RP
authors.lastname: Borges
authors.forename: L C
authors.initials: LC
authors.lastname: Alves
authors.forename: M
authors.initials: M
authors.lastname: Godinho