title: Linear response spin admittance of a quantum dot subject to a spin bias.
abstract: We compute the linear response spin admittance of a non-equilibrium quantum dot subject to a spin bias and an ac charge bias with small amplitude. As a function of the position of the resonant level (i.e. the gate voltage) the spin admittance shows a set of two peaks around the gate voltage at which the resonant or the upper level of the dot is in the vicinity of the equilibrium Fermi level in the leads. The peak heights can be related to the average number of quantum dot electrons. The frequency dependence of the spin admittance shows features resulting from the photon-assisted tunneling through the dot.
authors.affiliation: Department of Physics, University of Sofia, 1126 Sofia, Bulgaria. tzanko@phys.uni-sofia.bg
authors.forename: Tzanko
authors.initials: T
authors.lastname: Ivanov