title: The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC.
abstract: We report on the electrical characterization, by means of deep level transient spectroscopy, of electron-irradiated Al-doped 6H-SiC epilayers. Samples were irradiated with either 116 keV, in order to displace only carbon atoms, or 400 keV. Seven deep traps, in the 0.1-1.6 eV range above the valence band, were found. The thermal stability of the detected levels was analyzed by performing an isochronal annealing series in the 100-1800 °C temperature range and the atomic structure of most of the detected traps was found to be related to C-displacement.
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan. giovanni@semicon.kuee.kyoto-u.ac.jp
authors.forename: G
authors.initials: G
authors.lastname: Alfieri
authors.forename: T
authors.initials: T
authors.lastname: Kimoto