title: Ultrafast strain-induced current in a GaAs Schottky diode.
abstract: Picosecond acoustic pulses generated by femtosecond laser excitation of a metal film induce a transient current with subnanosecond rise time in a GaAs/Au Schottky diode. The signal consists of components due to the strain pulse crossing the edge of the depletion layer in the GaAs and also the GaAs/Au interface. A theoretical model is presented for the former and is shown to be in very good agreement with the experiment.
authors.affiliation: School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom.
authors.forename: D M
authors.initials: DM
authors.lastname: Moss
authors.forename: A V
authors.initials: AV
authors.lastname: Akimov
authors.forename: B A
authors.initials: BA
authors.lastname: Glavin
authors.forename: M
authors.initials: M
authors.lastname: Henini
authors.forename: A J
authors.initials: AJ
authors.lastname: Kent
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004553:Electric Conductivity; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D006046:Gold / Q000737:chemistry; D012666:Semiconductors; D013997:Time Factors
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D006046:Gold; D005708:Gallium