title: Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.
abstract: Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.
authors.affiliation: Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Post Office Box 603, Beijing 100190, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.forename: Shunchong
authors.initials: S
authors.lastname: Wang
authors.forename: Jianhui
authors.initials: J
authors.lastname: Yang
authors.forename: Liang
authors.initials: L
authors.lastname: Chen
authors.forename: Xiubo
authors.initials: X
authors.lastname: Qin
authors.forename: Bo
authors.initials: B
authors.lastname: Song
authors.forename: Baoyi
authors.initials: B
authors.lastname: Wang
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Chen