title: Disorder effect on the transport properties of graphene quantum well structures.
abstract: We study the disorder effect on the transport properties of graphene quantum well structures using a phenomenological statistical model. By adopting the transfer matrix method combined with a Monte Carlo averaging procedure, we observe transitions from ballistic transport to the diffusive limit. It is found that the transmission probability of incident electrons is sensitive to the disorder effect. The significance of the disorder effect depends on the incident angle of the electrons. For normal incidence, the perfect transmission due to the Klein tunneling remains robust against the disorder effect. For tilted incidence, the transmission possibility can be suppressed. In particular, we found that the transmission probability for electrons with a very small angle, i.e. the wavevector along the transport direction is zero in the barrier, can be greatly suppressed. As a result, abrupt dips at these wavevectors emerge in the transmission spectrum.
authors.affiliation: Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
authors.forename: G J
authors.initials: GJ
authors.lastname: Xu
authors.forename: B H
authors.initials: BH
authors.lastname: Wu
authors.forename: X G
authors.initials: XG
authors.lastname: Xu
authors.forename: J C
authors.initials: JC
authors.lastname: Cao