title: Two-dimensional intrinsic ferromagnetism at nitride-boride interfaces.
abstract: We predict theoretically novel two-dimensional interface ferromagnetism at AlN/MgB(2)(0001) using first-principles calculations, where the interface is employed as an ordered structure of spin sites instead of point defects. Although N dangling bonds are apparently saturated, interfacial states exhibit spin polarization. Hund's coupling of the two N p(∥) orbitals as well as low density of states at the Fermi energy contribute to strong band ferromagnetism. Furthermore, first-principles electron transport calculations demonstrate that this interfacial spin polarization is responsible for quantum spin transport. The magnetization can be controlled by applied gate bias voltages.
authors.affiliation: Department of Physics, The University of Tokyo, Tokyo, Japan. gohda@phys.s.u-tokyo.ac.jp
authors.forename: Y
authors.initials: Y
authors.lastname: Gohda
authors.forename: S
authors.initials: S
authors.lastname: Tsuneyuki