title: Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage.
abstract: Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
authors.affiliation: Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
authors.forename: Yanwen
authors.initials: Y
authors.lastname: Wu
authors.forename: I M
authors.initials: IM
authors.lastname: Piper
authors.forename: M
authors.initials: M
authors.lastname: Ediger
authors.forename: P
authors.initials: P
authors.lastname: Brereton
authors.forename: E R
authors.initials: ER
authors.lastname: Schmidgall
authors.forename: P R
authors.initials: PR
authors.lastname: Eastham
authors.forename: M
authors.initials: M
authors.lastname: Hugues
authors.forename: M
authors.initials: M
authors.lastname: Hopkinson
authors.forename: R T
authors.initials: RT
authors.lastname: Phillips