title: A fully tunable single-walled carbon nanotube diode.
abstract: We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ∼6 times the nanotube band gap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with nonlinearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States.
authors.forename: Chang-Hua
authors.initials: CH
authors.lastname: Liu
authors.forename: Chung-Chiang
authors.initials: CC
authors.lastname: Wu
authors.forename: Zhaohui
authors.initials: Z
authors.lastname: Zhong
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors
chemical_list: D037742:Nanotubes, Carbon