title: Bulk dislocation core dissociation probed by coherent x rays in silicon.
abstract: We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints.
authors.affiliation: Laboratoire de Physique des Solides, CNRS-UMR 8502, Bât 510, Université Paris-sud, 91405 Orsay cedex, France. vjacques@esrf.fr
authors.forename: V L R
authors.initials: VL
authors.lastname: Jacques
authors.forename: S
authors.initials: S
authors.lastname: Ravy
authors.forename: D
authors.initials: D
authors.lastname: Le Bolloc'h
authors.forename: E
authors.initials: E
authors.lastname: Pinsolle
authors.forename: M
authors.initials: M
authors.lastname: Sauvage-Simkin
authors.forename: F
authors.initials: F
authors.lastname: Livet
mesh_terms: D012825:Silicon / Q000737:chemistry*; D014961:X-Ray Diffraction
chemical_list: D012825:Silicon