title: Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As.
abstract: Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
authors.affiliation: Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden.
authors.forename: J
authors.initials: J
authors.lastname: Adell
authors.forename: I
authors.initials: I
authors.lastname: Ulfat
authors.forename: L
authors.initials: L
authors.lastname: Ilver
authors.forename: J
authors.initials: J
authors.lastname: Sadowski
authors.forename: K
authors.initials: K
authors.lastname: Karlsson
authors.forename: J
authors.initials: J
authors.lastname: Kanski