title: Generalized lucky-drift model for impact ionization in semiconductors with disorder.
abstract: An extension of an original lucky-drift model to the case of disordered semiconductors is proposed, motivated by experimental observations of an avalanche phenomenon in amorphous semiconductors. The generalization encompasses two scattering mechanisms: an inelastic one due to optical phonons and an elastic one due to a disorder potential. An obtained analytical solution is verified by a kinetic Monte Carlo simulation. Eventually, experimental data on a field dependence of the impact ionization coefficient in amorphous selenium are interpreted using reasonable material parameters.
authors.affiliation: Thunder Bay Regional Research Institute, Thunder Bay, ON, Canada. rubelo@tbh.net
authors.forename: O
authors.initials: O
authors.lastname: Rubel
authors.forename: A
authors.initials: A
authors.lastname: Potvin
authors.forename: D
authors.initials: D
authors.lastname: Laughton