title: Fully electrical read-write device out of a ferromagnetic semiconductor.
abstract: We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to a fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and readout of the state is done by the means of the tunneling anisotropic magnetoresistance effect. This 1 bit demonstrator device can be used to design an electrically programmable memory and logic device.
authors.affiliation: Physikalisches Institut (EP3) and Röntgen Center for Complex Material Systems, Am Hubland, Universität Würzburg, D-97074 Würzburg, Germany.
authors.forename: S
authors.initials: S
authors.lastname: Mark
authors.forename: P
authors.initials: P
authors.lastname: Dürrenfeld
authors.forename: K
authors.initials: K
authors.lastname: Pappert
authors.forename: L
authors.initials: L
authors.lastname: Ebel
authors.forename: K
authors.initials: K
authors.lastname: Brunner
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp