title: Recent progress in p-type doping and optical properties of SnO2 nanostructures for optoelectronic device applications.
abstract: SnO(2) semiconductor is a host material for ultraviolet optoelectronic devices applications because of its wide band gap (3.6 eV), large exciton binding energy (130 meV) and exotic electrical properties and has attracted great interests. The renewed interest is fueled by the availability of exciton emission in nanostructures, high quality epitaxial films, p-type conductivity, and heterojunction light emitting devices. This review begins with a survey of the patents and reports on the recent developments on SnO2 films. We focus on the epitaxial growth, p-type doping and photoluminescence properties of SnO(2) films and nanostructures, including the achievements in our group. Finally, the applications of SnO(2) nanostructures to optoelectronic devices including heterojunction light emitting devices, photodetectors and photovoltaic cells will be discussed.
authors.affiliation: Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, P.R. China.
authors.forename: Shusheng
authors.initials: S
authors.lastname: Pan
authors.forename: Guanghai
authors.initials: G
authors.lastname: Li
mesh_terms: D049449:Luminescence; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods; D055620:Optical Phenomena; D010330:Patents as Topic; D012666:Semiconductors; D017971:Tin Compounds / Q000737:chemistry*
chemical_list: D017971:Tin Compounds; C045358:stannic oxide