title: Trap-state-assisted white light emission from a CdSe nanocrystal integrated hybrid light-emitting diode.
abstract: This Letter reports on the fabrication of hybrid white-light-emitting diodes made of semiconductor nanocrystals (NCs) integrated on InGaN/GaN LEDs. Using core type and core/shell type CdSe NCs, the white light properties are systematically engineered for white light generation with high color rendering index (CRI). Unlike CdSe/ZnS core/shell NCs, which exhibited a unique narrowband edge emission, core type CdSe NCs offered extended broad emission toward orange/red wavelengths associated with deep trap states. Consequently, the light-emitting properties of the devices showed strong dependence on the type of NCs used, and devices with CdSe NCs offered admirable characteristics, such as Commission Internationale d'Eclairage coordinates of (0.356, 0.330) and a CRI as high as 87.4.
authors.affiliation: Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju, South Korea.
authors.forename: S
authors.initials: S
authors.lastname: Chandramohan
authors.forename: Beo Deul
authors.initials: BD
authors.lastname: Ryu
authors.forename: Hyun Kyu
authors.initials: HK
authors.lastname: Kim
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong
authors.forename: Eun-Kyung
authors.initials: EK
authors.lastname: Suh