title: Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene.
abstract: A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ(1) +) band dispersion yields an effective mass of 0.05 m(e) for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.
authors.affiliation: Department of Chemistry, University of North Texas, Denton, TX 76203-5070, USA.
authors.forename: Cameron
authors.initials: C
authors.lastname: Bjelkevig
authors.forename: Zhou
authors.initials: Z
authors.lastname: Mi
authors.forename: Jie
authors.initials: J
authors.lastname: Xiao
authors.forename: P A
authors.initials: PA
authors.lastname: Dowben
authors.forename: Lu
authors.initials: L
authors.lastname: Wang
authors.forename: Wai-Ning
authors.initials: WN
authors.lastname: Mei
authors.forename: Jeffry A
authors.initials: JA
authors.lastname: Kelber