title: Circularly polarized light emission from semiconductor planar chiral nanostructures.
abstract: We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results.
authors.affiliation: Photon Science Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Kuniaki
authors.initials: K
authors.lastname: Konishi
authors.forename: Masahiro
authors.initials: M
authors.lastname: Nomura
authors.forename: Naoto
authors.initials: N
authors.lastname: Kumagai
authors.forename: Satoshi
authors.initials: S
authors.lastname: Iwamoto
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa
authors.forename: Makoto
authors.initials: M
authors.lastname: Kuwata-Gonokami