title: Valence band structure of the Si(331)-(12 × 1) surface reconstruction.
abstract: Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at - 0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.
authors.affiliation: Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Neuchâtel, Switzerland. corsin.battaglia@epfl.ch
authors.forename: Corsin
authors.initials: C
authors.lastname: Battaglia
authors.forename: Eike Fabian
authors.initials: EF
authors.lastname: Schwier
authors.forename: Claude
authors.initials: C
authors.lastname: Monney
authors.forename: Clément
authors.initials: C
authors.lastname: Didiot
authors.forename: Nicolas
authors.initials: N
authors.lastname: Mariotti
authors.forename: Katalin
authors.initials: K
authors.lastname: Gaál-Nagy
authors.forename: Giovanni
authors.initials: G
authors.lastname: Onida
authors.forename: Michael
authors.initials: M
authors.lastname: Gunnar Garnier
authors.forename: Philipp
authors.initials: P
authors.lastname: Aebi
mesh_terms: D004579:Electron Transport; D004583:Electrons; D007091:Image Processing, Computer-Assisted / Q000379:methods; D016252:Microscopy, Scanning Tunneling / Q000379:methods*; D056951:Photoelectron Spectroscopy / Q000379:methods; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012825:Silicon