title: Spin splitting modulated by uniaxial stress in InAs nanowires.
abstract: We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k·p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.
authors.affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, People's Republic of China.
authors.forename: Genhua
authors.initials: G
authors.lastname: Liu
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
authors.forename: Caihong
authors.initials: C
authors.lastname: Jia
authors.forename: Guo-Dong
authors.initials: GD
authors.lastname: Hao
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang