title: Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy.
abstract: We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.
authors: Department of Physics, Ewha Womans University, Seoul 120-750, Korea.
authors: Soo-Hyon
authors: SH
authors: Phark
authors: Hogyoung
authors: H
authors: Kim
authors: Keun Man
authors: KM
authors: Song
authors: Phil Geun
authors: PG
authors: Kang
authors: Heung Soo
authors: HS
authors: Shin
authors: Dong-Wook
authors: DW
authors: Kim