title: Low energy Ar+ ion beam irradiation effects on Si ripple pattern.
abstract: Etching of surfaces by ion beam sputtering is widely used to pattern surfaces. Recent studies using the high-spatial-resolution capability of the scanning tunneling microscope, atomic force microscope and SEM (Scanning Electron Microscopy) disclose in fact that ion bombardment creates repetitive structures at micro-nanometre scale, waves (ripples), checkerboards or pyramids. The phenomenon is related to the interaction between ion erosion and diffusion of adatoms (vacancies), which causes surface re-organization. In this paper we investigated the ripple pattern formation on Si substrates by low energy Ar+ ion bombardment and the dose effect on ripple size. We also briefly discussed the irradiation effects (at normal incidence) on ripple pattern for different irradiation time. Finally, based on Bradley and Harper (BH) theory we proposed a model to understand the mechanism of ripple pattern change due to Ar+ ion beam irradiation.
authors: Department of Applied Electronics, Tokyo University of Science, Noda, Chiba 278-8510, Japan.
authors: Shahjada A
authors: SA
authors: Pahlovy
authors: Kazuma
authors: K
authors: Yanagimoto
authors: Iwao
authors: I
authors: Miyamoto