title: Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide.
abstract: Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ± 2.8) × 10(-6) Ω cm(2) are obtained.
authors: Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA. f-ou@northwestern.edu
authors: Fang
authors: F
authors: Ou
authors: D Bruce
authors: DB
authors: Buchholz
authors: Fei
authors: F
authors: Yi
authors: Boyang
authors: B
authors: Liu
authors: Chunhan
authors: C
authors: Hseih
authors: Robert P H
authors: RP
authors: Chang
authors: Seng-Tiong
authors: ST
authors: Ho