title: Construct hierarchical superhydrophobic silicon surfaces by chemical etching.
abstract: We present a simple approach for preparing hydrophobic silicon surfaces by constructing silicon nanowire arrays using Ag-assisted chemical etching without low-surface-energy material modification. The static and dynamic wetting properties of the nanostructured surfaces and their dependence on etching conditions were studied. It was revealed that the surface topologies of silicon nanowire arrays and their corresponding wetting properties could be tuned by varying the etching time. Under optimized etching conditions, superhydrophobic surfaces with an apparent contact angle larger than 150 degrees and a sliding angle smaller than 10 degrees were achieved due to the formation of a hierarchical structure. The origin of hydrophobic behavior was discussed based on Wenzel and Cassie models. In addition, the effects of surface modification of Si surface nanostructures on their hydrophobic characteristics were also investigated.
authors: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
authors: Yanbiao
authors: Y
authors: Zhou
authors: Bin
authors: B
authors: He
authors: Yang
authors: Y
authors: Yang
authors: Fang
authors: F
authors: Wang
authors: Weimin
authors: W
authors: Liu
authors: Pengfei
authors: P
authors: Wang
authors: Wenjun
authors: W
authors: Zhang
authors: Igor
authors: I
authors: Bello
authors: Shuit-Tong
authors: ST
authors: Lee
mesh_terms: D003198:Computer Simulation; D057927:Hydrophobic and Hydrophilic Interactions; D008956:Models, Chemical; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012825:Silicon / Q000737:chemistry*; D012997:Solvents / Q000737:chemistry*
chemical_list: D012997:Solvents; D012825:Silicon