title: Dynamic random access memory effect and memory device derived from a functional polyimide containing electron donor-acceptor pairs in the main chain.
abstract: A functional polyimide, hexafluoroisopropyl bis(phthalic dianhydride)/3,6-diaminocarbazole (6FDA/DAC), in which DAC serves as electron donor and 6FDA as electron acceptor, has been synthesized in our present work. Electrical characterization results on the sandwiched polyimide memory device (ITO/Thin polyimide Layer/Au) indicate that the polyimide possesses electrical bistability and the device exhibits two accessible conductivity states, which can be reversibly switched from the low-conductivity (OFF) state to the high-conductivity (ON) state with an ON/OFF current ratio of about 10(4). Different from the widely reported write-once-read-many-times (WORM) effects, the device with the 6FDA/DAC polyimide as the active layer shows dynamic random access memory (DRAM) behavior. The ON state of the device was lost immediately after removal of the applied voltage, while by applying a constant bias (e.g., 3 V) the ON state can be electrically sustained. The roles of donor and acceptor components in the polyimide main chain were elucidated through molecular simulation.
authors: State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology (BUCT), Beijing 100029, PR China.
authors: Guofeng
authors: G
authors: Tian
authors: Dezhen
authors: D
authors: Wu
authors: Shengli
authors: S
authors: Qi
authors: Zhanpeng
authors: Z
authors: Wu
authors: Xiaodong
authors: X
authors: Wang
mesh_terms: D004553:Electric Conductivity; D004579:Electron Transport; D015394:Molecular Structure; D012117:Resins, Synthetic / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012117:Resins, Synthetic; C029945:polyimide resin