title: Effect of buffer layer thickness on the growth properties of hydrothermally grown ZnO nanorods.
abstract: We investigated the effect of ZnO buffer layer thickness on the growth of hydrothermally grown ZnO nanorods. A series of ZnO buffer layers with different thicknesses was deposited on a p-Si (111) substrate using a co-sputtering system. After annealing the ZnO buffer layer, ZnO nanorods grown were grown hydrothermally at 95 degrees C. Unlike ZnO nanorods grown on as-deposited ZnO buffer layer, the diameter and length of ZnO nanorods grown on annealed ZnO buffer layers can be controlled. The structural and optical properties of ZnO nanorods grown on annealed ZnO buffer layers were analyzed by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence. The influence of ZnO buffer layer thickness on ZnO nanorods growth is discussed.
authors: Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791, Korea.
authors: Ah Ra
authors: AR
authors: Kim
authors: Ju-Young
authors: JY
authors: Lee
authors: Bo Ra
authors: BR
authors: Jang
authors: Hong Seung
authors: HS
authors: Kim
authors: Young Ji
authors: YJ
authors: Cho
authors: Hyun Kook
authors: HK
authors: Park
authors: Nak Won
authors: NW
authors: Jang
authors: Jin Hyeok
authors: JH
authors: Kim