title: Structural and optical properties of Cu doped ZnO thin films by co-sputtering.
abstract: This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment. It was observed from the XRD measurements that the ZnCuO films with a Cu concentration of 7% had ZnO(002), Cu2O(111), and Cu2O(200) planes. The 7% Cu-doped ZnO films also showed a band-gap energy of approximately 2.05 eV, an average transmittance of approximately 62%, and a p-type carrier density of approximately 1.33 x 10(19) cm-3 at room temperature. The bottom-gated TFTs that were fabricated with the ZnCuO thin film as a p-type channel exhibited an on-off ratio of approximately 6. These results indicate the possibility of applying ZnCuO thin films with variable band-gap energies to ZnO-based optoelectronic devices.
authors: Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-700, Korea.
authors: Sung Mook
authors: SM
authors: Chung
authors: Jae-Heon
authors: JH
authors: Shin
authors: Jeong-Min
authors: JM
authors: Lee
authors: Min Ki
authors: MK
authors: Ryu
authors: Woo-Seok
authors: WS
authors: Cheong
authors: Sang Hee Ko
authors: SH
authors: Park
authors: Chi-Sun
authors: CS
authors: Hwang
authors: Kyoung Ik
authors: KI
authors: Cho