title: A supramolecular approach on using poly(fluorenylstyrene)-block-poly(2-vinylpyridine):PCBM composite thin films for non-volatile memory device applications.
abstract: Supramolecular composite thin films of poly[4-(9,9-dihexylfloren-2-yl)styrene]-block-poly(2-vinylpyridine) (P(St-Fl)-b-P2VP):[6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) were prepared for write-once-read-many times (WORM) non-volatile memory devices. The optical absorption and photoluminescence results indicated the formation of charge transfer complexation between the P2VP block and PCBM, which led to the varied PCBM aggregated size and memory characteristics. The ITO/PCBM:(P(St-Fl)-b-P2VP)/Al device exhibited the WORM characteristic with low threshold voltage (-1.6 to -3.2 V) and high ON/OFF ratio (10(3) to 10(5)) by tuning the PCBM content. The switching behavior could be explained by the charge injection dominated thermionic emission in the OFF state and field-induced charge transfer in the ON state. The present study provides a novel approach system for tuning polymer memory device characteristics through the supramolecular materials approach.
authors: Department of Chemical Engineering, National Taiwan University, Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan.
authors: Jung-Ching
authors: JC
authors: Hsu
authors: Cheng-Liang
authors: CL
authors: Liu
authors: Wen-Chang
authors: WC
authors: Chen
authors: Kenji
authors: K
authors: Sugiyama
authors: Akira
authors: A
authors: Hirao
mesh_terms: D037741:Fullerenes / Q000737:chemistry*; D011145:Polyvinyls / Q000737:chemistry*; D011725:Pyridines / Q000737:chemistry
chemical_list: C539575:(6,6)-phenyl C61-butyric acid methyl ester; D037741:Fullerenes; D011145:Polyvinyls; D011725:Pyridines; C058671:poly(2-vinylpyridine); C030953:2-vinylpyridine