title: Impact of Pb doping on the optical and electrical properties of ZnO nanowires.
abstract: In this letter, effect of Pb-doping on the electrical and optical properties of the as grown ZnO nanowires (NWs) have been investigated. The microstructural investigations show that the Pb-dopant substituted into wurtzite ZnO nanowires without forming any secondary phase. The amount of contents and valence state of Pb ions has been investigated through energy dispersive spectroscopy and X-ray photospectroscopy. The doped nanowires show a remarkable reduction of 15.3 nm (127.4 meV) in the optical band gap, while an increase amount of deep-level defects transition in visible luminescence. Furthermore, the reduction in the band gap and the presence of deep-level defects induces strong effect in the electrical resistivity of doped NWs, which makes their potential for the fabrication of nanodevices. The possible growth mechanism is also briefly discussed.
authors: Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084, China.
authors: Mashkoor
authors: M
authors: Ahmad
authors: Caofeng
authors: C
authors: Pan
authors: Jiong
authors: J
authors: Zhao
authors: Jing
authors: J
authors: Zhu
mesh_terms: D004553:Electric Conductivity; D007854:Lead / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012031:Refractometry; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D007854:Lead; D015034:Zinc Oxide