title: Promoted growth of Bi single-crystalline nanowires by sidewall-induced compressive stress in on-film formation of nanowires.
abstract: To increase the density of Bi nanowires grown by our unique on-film formation of nanowires (OFF-ON) method, we introduced a technique for enhancing compressive stress, which is the driving force for the nanowire growth. The compressive stress could be controlled by modifying the substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a thermally oxidized Si(100) substrate. It was found that the density of Bi nanowires grown from Bi films in 100 x 100 microm2-sized SiO2 patterns increases by a factor of seven over that from non-patterned substrates. Our results indicate that the density of Bi nanowires can be increased by enhanced compressive stress arising from a sidewall effect in the optimized pattern size and array.
authors: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seoul 120-749, Korea.
authors: Hyunsu
authors: H
authors: Kim
authors: Jin-Seo
authors: JS
authors: Noh
authors: Jinhee
authors: J
authors: Ham
authors: Wooyoung
authors: W
authors: Lee
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D019245:Compressive Strength; D003460:Crystallization / Q000379:methods*; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D001729:Bismuth; D012825:Silicon