title: Size-dependent oriented attachment in the growth of pure and defect-free hexagonal boron nitride nanocrystals.
abstract: Pure and defect-free hexagonal boron nitride (hBN) nanocrystals with deep-ultraviolet light emissions at around 215 nm were prepared via a solid state reaction. This involved preparing a precursor from potassium borohydride and ammonium chloride powders, and then heating the precursor and additional ammonium chloride to 1000 °C within a nitrogen atmosphere. The hBN nanocrystals were studied using a variety of characterization techniques (e.g., TEM, AFM, N(2) absorption/desorption). A growth mechanism based on size-dependent oriented attachment was proposed for the nanocrystals.
authors: College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, People's Republic of China.
authors: L X
authors: LX
authors: Lin
authors: Z H
authors: ZH
authors: Li
authors: Y
authors: Y
authors: Zheng
authors: A S
authors: AS
authors: Ahmed