title: Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps.
abstract: We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.
authors: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
authors: Woojin
authors: W
authors: Park
authors: Gunho
authors: G
authors: Jo
authors: Woong-Ki
authors: WK
authors: Hong
authors: Jongwon
authors: J
authors: Yoon
authors: Minhyeok
authors: M
authors: Choe
authors: Sangchul
authors: S
authors: Lee
authors: Yongsung
authors: Y
authors: Ji
authors: Geunjin
authors: G
authors: Kim
authors: Yung Ho
authors: YH
authors: Kahng
authors: Kwanghee
authors: K
authors: Lee
authors: Deli
authors: D
authors: Wang
authors: Takhee
authors: T
authors: Lee