title: In-situ detection of C-reactive protein using silicon nanowire field effect transistor.
abstract: Label-free, sensitive, and real-time c-reactive protein (CRP) sensor was fabricated using p-type silicon nanowire (SiNW) based structures configured as field effect transistors (FET) using the conventional 'top-down' semiconductor processes. The width of SiNWs were distributed 80 nm to 400 nm. Among them to improve signal-to-noise ratio and sensitivity of SiNW FET, 221 nm-SiNW was chosen for biosensing of CRP. Antibody of c-reactive protein (anti-CRP) was immobilized on the SiNW surface through polydimethylsiloxane (PDMS) microfluidic channel for detection of CRP. Specific binding of CRP with anti-CRP on the SiNW surface caused a conductance change of SiNW FET and various injections from 10 and 1 microg/ml to 100 ng/ml solutions of CRP resulted in the conductance changes from 39 and 25 to 16%, respectively. Label-free, in-situ and very sensitive electrical detection of CRP was demonstrated with the prepared SiNW FET.
authors: Korea Institute of Science and Technology (KIST), Nano-Devices Research Center, 39-1 Hawolgok-Dong, Wolsong-Gil 5, Seongbuk-Gu, Seoul 136-791, Korea.
authors: Soon Mook
authors: SM
authors: Kwon
authors: Gil Bum
authors: GB
authors: Kang
authors: Yong Tae
authors: YT
authors: Kim
authors: Young-Hwan
authors: YH
authors: Kim
authors: Byeong-Kwon
authors: BK
authors: Ju
mesh_terms: D055910:Antibodies, Immobilized; D015415:Biomarkers / Q000032:analysis; D015374:Biosensing Techniques / Q000295:instrumentation*; D002097:C-Reactive Protein / Q000032:analysis* / Q000276:immunology; D004129:Dimethylpolysiloxanes; D006801:Humans; D046210:Microfluidic Analytical Techniques; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology; D053770:Nanowires / Q000648:ultrastructure; D012825:Silicon; D014173:Transistors, Electronic
chemical_list: D055910:Antibodies, Immobilized; D015415:Biomarkers; D004129:Dimethylpolysiloxanes; C013830:baysilon; D002097:C-Reactive Protein; D012825:Silicon