title: Metal positioning on silicon surfaces using the etching of buried dislocation arrays.
abstract: Large-area Si(001) nanopatterned surfaces obtained by etching dislocation line arrays have been used to drive the positioning of metallic islands. A method combining wafer bonding of (001) silicon on insulator layers and preferential chemical etching allows controlling the periodicity of square trench arrays in the 20-50 nm lateral periodicity range with an accuracy of less than 1 nm and a depth of about 4-5 nm. The interfacial area containing the dislocation line plane can be removed and a single crystal maintaining the morphological patterning can be obtained. It is shown that oxidized or deoxidized silicon nanopatterned surfaces can drive the positioning of Ni, Au and Ag islands for a 20 nm lateral periodicity and that a lateral long range order, directly transferred from the dislocation network, can be obtained in the Ni and Au cases.
authors: CEA-Leti, Minatec-Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France.
authors: A
authors: A
authors: Bavard
authors: F
authors: F
authors: Fournel
authors: J
authors: J
authors: Eymery