title: Mid-infrared photonic crystal cavities in silicon.
abstract: We demonstrate the design, fabrication, and characterization of silicon photonic crystal cavities realized in a silicon on insulator (SOI) platform, operating at a wavelength of 4.4 μm with a quality factor of 13,600. Cavity modes are imaged using the technique of scanning resonant scattering microscopy. To the best of our knowledge, this is the first demonstration of photonic devices fabricated in SOI and operating in the 4-5 μm wavelength range.
authors: School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA. shankar2@fas.harvard.edu
authors: Raji
authors: R
authors: Shankar
authors: Rick
authors: R
authors: Leijssen
authors: Irfan
authors: I
authors: Bulu
authors: Marko
authors: M
authors: Lončar