title: The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.
abstract: Vertically aligned ZnO/ZnTe core-shell nanowires were grown on a-plane sapphire substrate by using chemical vapor deposition with gold as catalyst for the growth of ZnO core and then followed by growing ZnTe shell using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscope (TEM) and Raman scattering indicate that the core-shell nanostructures have good crystalline quality. Three-dimensional fluorescence images obtained by using laser scanning confocal microscope demonstrate that the nanowires have good optical properties. The core-shell nanowire was then fabricated into single nanowire field effect transistor by standard e-beam photolithography. Electrical measurements reveals that the p-type ZnO/ZnTe FET device has a turn on voltage of -1.65 V and the hole mobility is 13.3 cm2/V s.
authors: Department of Physics, National Taiwan University, Taipei 106, Taiwan.
authors: H Y
authors: HY
authors: Chao
authors: S H
authors: SH
authors: You
authors: J Y
authors: JY
authors: Lu
authors: J H
authors: JH
authors: Cheng
authors: Y H
authors: YH
authors: Chang
authors: C T
authors: CT
authors: Liang
authors: C T
authors: CT
authors: Wu
mesh_terms: D003460:Crystallization / Q000379:methods; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation; D010316:Particle Size; D013499:Surface Properties; D013691:Tellurium / Q000737:chemistry*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D013691:Tellurium; D015034:Zinc Oxide