title: Phase-change memory in Bi₂Te₃ nanowires.
authors: Department of Physics, Yonsei Universiy, Seoul 120-749, Korea.
authors: Nalae
authors: N
authors: Han
authors: Sung In
authors: SI
authors: Kim
authors: Jeong-Do
authors: JD
authors: Yang
authors: Kyumin
authors: K
authors: Lee
authors: Hyunchul
authors: H
authors: Sohn
authors: Hye-Mi
authors: HM
authors: So
authors: Chi Won
authors: CW
authors: Ahn
authors: Kyung-Hwa
authors: KH
authors: Yoo
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization; D004566:Electrodes; D004595:Electroplating; D053770:Nanowires / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry; D013691:Tellurium / Q000737:chemistry*
chemical_list: D017655:Silicon Compounds; C542787:bismuth telluride; D000537:Aluminum Oxide; D013691:Tellurium; C032734:silicon nitride; D001729:Bismuth