title: Schottky diode fabricated on a single crystalline diamond rod.
abstract: The fabrication process of Al/diamond Schottky diodes on single crystalline diamond rods (SCDRs) was demonstrated. SCDRs of submicron diameters were obtained by etching a polished polycrystalline diamond film in oxygen plasma. The as-scratched SCDR was confirmed to be single crystalline diamond by electron diffraction measurements showing the same fuzzy spot pattern at different parts of an SCDR. Each SCDR was extracted from a grain in the polycrystalline film where the grain size served as a limit of the length of an SCDR. Al/Ti and Al metals were deposited to form ohmic and Schottky contacts, respectively. A hydrogen plasma treatment is an essential step prior to the formation of an Al/diamond Schottky contact in order to improve the device performance. The submicron scale Al/diamond Schottky diode exhibits a very high current density of 1.4 × 10(4) A cm(-2) at a forward bias (V(F)) voltage of - 3 V.
authors: Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu City, Taiwan, Republic of China.
authors: Jian-You
authors: JY
authors: Lin
authors: Wen-Kai
authors: WK
authors: Lin
authors: Jon-Yiew
authors: JY
authors: Gan
authors: Jenn-Chang
authors: JC
authors: Hwang
authors: Chwung-Shan
authors: CS
authors: Kou