title: Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.
abstract: We investigate energy levels, thermodynamic, transport and magnetotransport properties of holes in GaAs structure with quantum well InGaAs delta-doped by C and Mn. We present self-consistent calculations for energy levels in the quantum well for different degrees of ionization of Mn impurity. The magnetoresistance of holes in the quantum well is calculated. We explain observed negative magnetoresistance by the reduction of spin-flip scattering on magnetic ions due to aligning of spins with magnetic field.
authors: P.N. Lebedev Physical Institute of Russian Academy of Science, Moscow 119991, Russia.
authors: L Yu
authors: LY
authors: Shchurova
authors: V A
authors: VA
authors: Kulbachinskii
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D004735:Energy Transfer; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008280:Magnetics; D008956:Models, Chemical; D045663:Quantum Dots; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide