title: Graphene epitaxy by chemical vapor deposition on SiC.
abstract: We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.
authors: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland. wlodek.strupinski@itme.edu.pl
authors: W
authors: W
authors: Strupinski
authors: K
authors: K
authors: Grodecki
authors: A
authors: A
authors: Wysmolek
authors: R
authors: R
authors: Stepniewski
authors: T
authors: T
authors: Szkopek
authors: P E
authors: PE
authors: Gaskell
authors: A
authors: A
authors: Grüneis
authors: D
authors: D
authors: Haberer
authors: R
authors: R
authors: Bozek
authors: J
authors: J
authors: Krupka
authors: J M
authors: JM
authors: Baranowski
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D017554:Carbon Compounds, Inorganic; D005740:Gases; D046911:Macromolecular Substances; D017655:Silicon Compounds; D006108:Graphite; C022088:silicon carbide