title: Axial InP nanowire tandem junction grown on a silicon substrate.
abstract: Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
authors: Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden. magnus.heurlin@ftf.lth.se
authors: Magnus
authors: M
authors: Heurlin
authors: Peter
authors: P
authors: Wickert
authors: Stefan
authors: S
authors: Fält
authors: Magnus T
authors: MT
authors: Borgström
authors: Knut
authors: K
authors: Deppert
authors: Lars
authors: L
authors: Samuelson
authors: Martin H
authors: MH
authors: Magnusson