title: Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots.
abstract: We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong transverse electric field in the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.
authors: NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy. s.roddaro@sns.it
authors: Stefano
authors: S
authors: Roddaro
authors: Andrea
authors: A
authors: Pescaglini
authors: Daniele
authors: D
authors: Ercolani
authors: Lucia
authors: L
authors: Sorba
authors: Fabio
authors: F
authors: Beltram
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D004574:Electromagnetic Fields; D004583:Electrons; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry* / Q000528:radiation effects; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide