title: Er-doped ZnO nanorod arrays with enhanced 1540 nm emission by employing Ag island films and high-temperature annealing.
abstract: Single-crystalline Er-doped ZnO nanorod arrays (NRAs) on Ag island films with appropriate annealing show a promising enhancement of 1540 nm emission for optical communication. The enhanced 1540 nm emission of Er-doped ZnO NRAs is attributed to the enhancement of the deep level emission of ZnO host. In an effort to enhance deep level emission to pump Er(3+) emission at 1540 nm in the Er-doped ZnO NRAs, surface plasmon coupling and increase in deep level states were carried out via Ag island films and high-temperature annealing. This study points to the effective methods to enhance 1540 nm emission, demonstrating that ZnO NRAs with Ag islands have a promising potential for the application in optical communications.
authors: Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617 Taiwan.
authors: Jian-Wei
authors: JW
authors: Lo
authors: Wei-Cheng
authors: WC
authors: Lien
authors: Chin-An
authors: CA
authors: Lin
authors: Jr-Hau
authors: JH
authors: He