title: Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate.
abstract: We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 10(2). The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.
authors: Research Center for Time-Domain Nano-Functional Devices, Korea University, Seoul 136-701, Korea.
authors: Tae-Geun
authors: TG
authors: Kim
authors: Jongseung
authors: J
authors: Hwang
authors: Jeongmin
authors: J
authors: Kang
authors: Sangsig
authors: S
authors: Kim
authors: SungWoo
authors: S
authors: Hwang