title: High extinction ratio 10 Gbit/s silicon optical modulator.
abstract: High speed and high extinction ratio silicon optical modulator using carrier depletion is experimentally demonstrated. The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical loss as low as 6 dB.
authors: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS, Orsay, France.
authors: Gilles
authors: G
authors: Rasigade
authors: Melissa
authors: M
authors: Ziebell
authors: Delphine
authors: D
authors: Marris-Morini
authors: Jean-Marc
authors: JM
authors: Fédéli
authors: Frédéric
authors: F
authors: Milesi
authors: Philippe
authors: P
authors: Grosse
authors: David
authors: D
authors: Bouville
authors: Eric
authors: E
authors: Cassan
authors: Laurent
authors: L
authors: Vivien
mesh_terms: D003195:Computer Communication Networks / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D008872:Microwaves; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon