title: In-situ synchrotron X-ray scattering study of thin film growth by atomic layer deposition.
abstract: We report an atomic layer deposition chamber for in-situ synchrotron X-ray scattering study of thin film growth. The chamber was designed for combined synchrotron X-ray reflectivity and two-dimensional grazing-incidence X-ray diffraction measurement to do a in-situ monitoring of ALD growth. We demonstrate ruthenium thermal ALD growth for the performance of the chamber. 10, 20, 30, 50, 70, 100, 150 and 250-cycled states are measured by X-ray scattering methods during ALD growth process. Growth rate is calculated from thickness values and the surface roughness of each state is estimated by X-ray reflectivity analysis. The crystal structure of initial growth state is observed by Grazing-incidence X-ray diffraction. These results indicate that in-situ X-ray scattering method is a promising analysis technique to investigate the initial physical morphology of ALD films.
authors: Department of MSE, POSTECH, Pohang, Gyeongbuk 790-784, South Korea.
authors: Yong Jun
authors: YJ
authors: Park
authors: Dong Ryeol
authors: DR
authors: Lee
authors: Hyun Hwi
authors: HH
authors: Lee
authors: Han-Bo-Ram
authors: HB
authors: Lee
authors: Hyungjun
authors: H
authors: Kim
authors: Gye-Choon
authors: GC
authors: Park
authors: Shi-Woo
authors: SW
authors: Rhee
authors: Sunggi
authors: S
authors: Baik