title: In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
abstract: Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO(2) substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550 °C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575 °C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.
authors: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. anna.fontcuberta-morral@epfl.ch
authors: Martin
authors: M
authors: Heiss
authors: Bernt
authors: B
authors: Ketterer
authors: Emanuele
authors: E
authors: Uccelli
authors: Joan Ramon
authors: JR
authors: Morante
authors: Jordi
authors: J
authors: Arbiol
authors: Anna
authors: A
authors: Fontcuberta i Morral
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D002384:Catalysis; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D049449:Luminescence; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D045663:Quantum Dots; D013059:Spectrum Analysis, Raman / Q000379:methods; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium