title: Nonvolatile floating-gate memories using Zr and ZrO2 nanodots.
abstract: Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs by annealing. The memory window that is estimated by capacitance-voltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO2 and ZrO2.
authors: Department Applied Physics, College of Applied Science, Institute of Natural Sciences, Kyung Hee University, Yongin 446-701, Korea.
authors: Seung Hui
authors: SH
authors: Hong
authors: Min Choul
authors: MC
authors: Kim
authors: Hyoung Taek
authors: HT
authors: Oh
authors: Suk-Ho
authors: SH
authors: Choi
authors: Kyung Joong
authors: KJ
authors: Kim