title: High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography.
abstract: Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO(3)/Nb-doped SrTiO(3) substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO(3) layer, respectively.
authors: Department of Materials Science and Engineering and Division of Advanced Materials Science, Pohang University of Science and Technology, Pohang 790-784, Korea. yhshin.at.uou@gmail.com
authors: Yun-Sok
authors: YS
authors: Shin
authors: Jong Yeog
authors: JY
authors: Son
authors: Moon-Ho
authors: MH
authors: Jo
authors: Young-Han
authors: YH
authors: Shin
authors: Hyun Myung
authors: HM
authors: Jang