title: Fabrication of three-dimensional autocloned photonic crystal on sapphire substrate.
abstract: We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED) for application in manipulating the light extraction of the sapphire-based GaN LED.
authors: Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan.
authors: Hao Ming
authors: HM
authors: Ku
authors: Chen Yang
authors: CY
authors: Huang
authors: Shiuh
authors: S
authors: Chao