title: Unit cell structure of crystal polytypes in InAs and InSb nanowires.
abstract: The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
authors: Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69 A-4040 Linz, Austria. dominik.kriegner@jku.at
authors: Dominik
authors: D
authors: Kriegner
authors: Christian
authors: C
authors: Panse
authors: Bernhard
authors: B
authors: Mandl
authors: Kimberly A
authors: KA
authors: Dick
authors: Mario
authors: M
authors: Keplinger
authors: Johan M
authors: JM
authors: Persson
authors: Philippe
authors: P
authors: Caroff
authors: Daniele
authors: D
authors: Ercolani
authors: Lucia
authors: L
authors: Sorba
authors: Friedhelm
authors: F
authors: Bechstedt
authors: Julian
authors: J
authors: Stangl
authors: Günther
authors: G
authors: Bauer
mesh_terms: D000965:Antimony / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size
chemical_list: D001152:Arsenicals; D007204:Indium; D000965:Antimony; C076773:indium arsenide