title: Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island.
abstract: We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.
authors: Department of Physics & Research Institute for Nano Science & Technology, Chungbuk National University, Cheongju 361-763, South Korea.
authors: S J
authors: SJ
authors: Shin
authors: J J
authors: JJ
authors: Lee
authors: H J
authors: HJ
authors: Kang
authors: J B
authors: JB
authors: Choi
authors: S-R Eric
authors: SR
authors: Yang
authors: Y
authors: Y
authors: Takahashi
authors: D G
authors: DG
authors: Hasko
mesh_terms: D003198:Computer Simulation; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D055672:Static Electricity; D013696:Temperature
chemical_list: D012825:Silicon