title: High quality factor etchless silicon photonic ring resonators.
abstract: We demonstrate high quality factor etchless silicon photonic ring resonators fabricated by selective thermal oxidation of silicon without the silicon layer being exposed to any plasma etching throughout the fabrication process. We achieve a high intrinsic quality factor of 510,000 in 50 µm-radius ring resonators, corresponding to a ring loss of 0.8 dB/cm. The device has a total chip insertion loss of 2.5 dB, achieved by designing etchless silicon inverse nanotapers at both the input and output of the chip.
authors: School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. ll399@cornell.edu
authors: Lian-Wee
authors: LW
authors: Luo
authors: Gustavo S
authors: GS
authors: Wiederhecker
authors: Jaime
authors: J
authors: Cardenas
authors: Carl
authors: C
authors: Poitras
authors: Michal
authors: M
authors: Lipson
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D014159:Transducers
chemical_list: D012825:Silicon