title: Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films.
abstract: Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26×10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1×10(5)  to 32 cm/s.
authors: Department of Optics and Photonics, National Central University, Chung-Li, Taiwan.
authors: Sheng-Hui
authors: SH
authors: Chen
authors: Chun-Che
authors: CC
authors: Hsu
authors: Hsuan-Wen
authors: HW
authors: Wang
authors: Chi-Li
authors: CL
authors: Yeh
authors: Shao-Ze
authors: SZ
authors: Tseng
authors: Hung-Ju
authors: HJ
authors: Lin
authors: Cheng-Chung
authors: CC
authors: Lee
authors: Cheng-Yu
authors: CY
authors: Peng