title: High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO₂ high-k dielectric grown by spray pyrolysis in ambient air.
authors: Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London SW72BW, UK. g.adamopoulos@imperial.ac.uk
authors: George
authors: G
authors: Adamopoulos
authors: Stuart
authors: S
authors: Thomas
authors: Paul H
authors: PH
authors: Wöbkenberg
authors: Donal D C
authors: DD
authors: Bradley
authors: Martyn A
authors: MA
authors: McLachlan
authors: Thomas D
authors: TD
authors: Anthopoulos
mesh_terms: D000388:Air; D001896:Boron Compounds / Q000737:chemistry*; D004560:Electricity; D008094:Lithium / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
chemical_list: D001896:Boron Compounds; D017971:Tin Compounds; C531301:zirconium diboride; C109984:indium tin oxide; D008094:Lithium; D015040:Zirconium; D015034:Zinc Oxide