title: 50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.
abstract: We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.
authors: Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. ytang@ece.ucsb.edu
authors: Yongbo
authors: Y
authors: Tang
authors: Hui-Wen
authors: HW
authors: Chen
authors: Siddharth
authors: S
authors: Jain
authors: Jonathan D
authors: JD
authors: Peters
authors: Urban
authors: U
authors: Westergren
authors: John E
authors: JE
authors: Bowers
mesh_terms: D003195:Computer Communication Networks / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008872:Microwaves; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*