title: Nano-electromechanical switch-CMOS hybrid technology and its applications.
abstract: Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.
authors: Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea 500-712.
authors: B H
authors: BH
authors: Lee
authors: H J
authors: HJ
authors: Hwang
authors: C H
authors: CH
authors: Cho
authors: S K
authors: SK
authors: Lim
authors: S Y
authors: SY
authors: Lee
authors: H
authors: H
authors: Hwang
mesh_terms: D006108:Graphite / Q000737:chemistry*; D008670:Metals / Q000737:chemistry; D055617:Micro-Electrical-Mechanical Systems / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors
chemical_list: D008670:Metals; D010087:Oxides; D006108:Graphite