title: Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition.
abstract: The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.
authors: School of Nano Science and Technology, Chungnam National University, Daeduk Science Town, 305-764 Daejeon, Korea.
authors: Jun-Ku
authors: JK
authors: Ahn
authors: Kyoung-Woo
authors: KW
authors: Park
authors: Sung-Gi
authors: SG
authors: Hur
authors: Chung-Soo
authors: CS
authors: Kim
authors: Jeong-Yong
authors: JY
authors: Lee
authors: Soon-Gil
authors: SG
authors: Yoon