title: Antimony selenide phase-change nanowires for memory application.
abstract: Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.
authors: Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea.
authors: Soon-Won
authors: SW
authors: Jung
authors: Sung-Min
authors: SM
authors: Yoon
authors: In-Kyu
authors: IK
authors: You
authors: Byoung-Gon
authors: BG
authors: Yu
authors: Kyung-Wan
authors: KW
authors: Koo