title: Deformation characteristics of an organic thin film transistor.
abstract: An organic thin film transistor (OTFT) on a flexible substrate with electroplated electrodes has many advantages in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical characteristics of an OTFT with various compressive stress conditions using COMSOL. An analysis model, which was limited to channel, source, and drain, was used to investigate deformation and internal stress concentrations. The channel length is 40 microm and the OTFT structure is a top-contact structure. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. The deformation characteristics of the fabricated OTFT were predicted in terms of strain and internal stress.
authors: Graduate School of Mechanical Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Suwon 440-746, Korea.
authors: D K
authors: DK
authors: Lee
authors: S C
authors: SC
authors: Lee
authors: Y G
authors: YG
authors: Seol
authors: J H
authors: JH
authors: Ahn
authors: N E
authors: NE
authors: Lee
authors: Y J
authors: YJ
authors: Kim