title: Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector.
abstract: We report a novel evanescent-coupled germanium (Ge) electro-absorption (EA) modulator with a small active area of 16 μm2 giving an extinction ratio of at least 10 dB for a wavelength range of 1580-1610 nm. The modulation efficiency of the modulator at this wavelength range was ~2 dB/V. In addition, monolithic integration of both evanescent-coupled Ge EA modulator and Ge p-i-n photodetector is demonstrated for the first time.
authors: Institute of Microelectronics, Agency for Science, Technology & Research (A*STAR), 11 Science Park Road, 117685 Singapore. limej@ime.a-star.edu.sg
authors: Andy Eu-Jin
authors: AE
authors: Lim
authors: Tsung-Yang
authors: TY
authors: Liow
authors: Fang
authors: F
authors: Qing
authors: Ning
authors: N
authors: Duan
authors: Liang
authors: L
authors: Ding
authors: Mingbin
authors: M
authors: Yu
authors: Guo-Qiang
authors: GQ
authors: Lo
authors: Dim-Lee
authors: DL
authors: Kwong