title: Resistive random access memory utilizing ferritin protein with Pt nanoparticles.
abstract: This study reports controlled single conductive paths found in resistive random access memory (ReRAM) formed by embedding Pt nanoparticles (Pt NPs) in NiO film. Homogeneous Pt NPs produced and placed by ferritin protein produce electric field convergence which leads to controlled conductive path formation. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent of the Pt NP density, which indicates that a single metal NP in a memory cell will achieve low power and stable operation.
authors: Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0192, Japan. uenuma@ms.naist.jp
authors: Mutsunori
authors: M
authors: Uenuma
authors: Kentaro
authors: K
authors: Kawano
authors: Bin
authors: B
authors: Zheng
authors: Naofumi
authors: N
authors: Okamoto
authors: Masahiro
authors: M
authors: Horita
authors: Shigeo
authors: S
authors: Yoshii
authors: Ichiro
authors: I
authors: Yamashita
authors: Yukiharu
authors: Y
authors: Uraoka
mesh_terms: D017097:Electric Impedance; D005293:Ferritins / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010984:Platinum / Q000737:chemistry*
chemical_list: D010984:Platinum; D005293:Ferritins