title: Determination of the photocarrier diffusion length in intrinsic Ge nanowires.
abstract: We quantitatively determined the photocarrier diffusion length in intrinsic Ge nanowires (NWs) using scanning photocurrent microscopy. Specifically, the spatial mapping of one-dimensional decay in the photocurrent along the Ge NWs under the scanning laser beam (λ= 532 nm) was analyzed in a one-dimensional diffusion rate equation to extract the diffusion length of ~4-5 μm. We further attempt to determine the photocarrier lifetime under a finite bias across the Ge NWs, and discuss the role of surface scattering.
authors: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea.
authors: Yun-Sok
authors: YS
authors: Shin
authors: Donghun
authors: D
authors: Lee
authors: Hyun-Seung
authors: HS
authors: Lee
authors: Yong-Jun
authors: YJ
authors: Cho
authors: Cheol-Joo
authors: CJ
authors: Kim
authors: Moon-Ho
authors: MH
authors: Jo
mesh_terms: D003198:Computer Simulation; D004058:Diffusion; D005857:Germanium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing / Q000379:methods; D008956:Models, Chemical; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D012542:Scattering, Radiation
chemical_list: D005857:Germanium