title: Characteristics and fabrication of vertical type organic light emitting transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer and light emitting polymer.
abstract: We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance Ro for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/Al (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.
authors: Department of Chemical and Biomolecular Engineering, Sogang University, Sinsu-dong, Mapo-gu, Seoul 121-172, Korea.
authors: Hee-Suk
authors: HS
authors: Jin
authors: Hyun-Sik
authors: HS
authors: Min
authors: Takehiko
authors: T
authors: Mori
authors: Se-Young
authors: SY
authors: Oh