title: Ion-implantation studies on perpendicular media.
abstract: Magnetic and structural properties of ion implanted perpendicular recording media have been investigated. Effects of 12C+ ion implantation with the doses of 2 x 10(11), 10(13), 10(14) and 10(16) ions/cm2 in the magnetic recording layer of conventional granular and continuous perpendicular media are reported in this paper. Implantation with the highest fluence of 10(16) ions/cm2 resulted in change of the magnetization reversal mechanism, thereby reducing coercivity. In continuous media the implanted ions cause increase in pinning defects, leading to an increase in coercivity. In contrast, high dose was found to cause similar change in the crystallographic properties of both the granular and continuous media.
authors: Electrical and Computer Engineering (ECE) Department, Information Storage Materials Laboratory (ISML), National University of Singapore (NUS), Singapore 117576, Singapore.
authors: Nikita
authors: N
authors: Gaur
authors: Siegfried L
authors: SL
authors: Maurer
authors: Ronald W
authors: RW
authors: Nunes
authors: S N
authors: SN
authors: Piramanayagam
authors: C S
authors: CS
authors: Bhatia
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007477:Ions; D008280:Magnetics / Q000295:instrumentation*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*
chemical_list: D007477:Ions