title: GeSn p-i-n photodetector for all telecommunication bands detection.
abstract: Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.
authors: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
authors: Shaojian
authors: S
authors: Su
authors: Buwen
authors: B
authors: Cheng
authors: Chunlai
authors: C
authors: Xue
authors: Wei
authors: W
authors: Wang
authors: Quan
authors: Q
authors: Cao
authors: Haiyun
authors: H
authors: Xue
authors: Weixuan
authors: W
authors: Hu
authors: Guangze
authors: G
authors: Zhang
authors: Yuhua
authors: Y
authors: Zuo
authors: Qiming
authors: Q
authors: Wang
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008027:Light; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D013685:Telecommunications / Q000295:instrumentation*; D014001:Tin / Q000737:chemistry*
chemical_list: D005857:Germanium; D014001:Tin