title: Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics.
abstract: Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 10(11) eV(-1) cm(-2), a low subthreshold slope of 70-80 mV/decade, and an I(ON)/I(OFF) current ratio greater than 2 × 10(6) are obtained.
authors: Vienna University of Technology, Institute for Solid State Electronics, Vienna 1040, Austria.
authors: C
authors: C
authors: Henkel
authors: S
authors: S
authors: Abermann
authors: O
authors: O
authors: Bethge
authors: G
authors: G
authors: Pozzovivo
authors: P
authors: P
authors: Klang
authors: M
authors: M
authors: Stöger-Pollach
authors: E
authors: E
authors: Bertagnolli