title: In2O3 nanocrystal memory with the barrier engineered tunnel layer.
abstract: In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.
authors: Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea.
authors: Dong Uk
authors: DU
authors: Lee
authors: Seon Pil
authors: SP
authors: Kim
authors: Dong Seok
authors: DS
authors: Han
authors: Eun Kyu
authors: EK
authors: Kim
authors: Goon-Ho
authors: GH
authors: Park
authors: Won-Ju
authors: WJ
authors: Cho
authors: Young-Ho
authors: YH
authors: Kim