title: Metallic transport in a monatomic layer of in on a silicon surface.
abstract: We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.
authors.affiliation: Department of Physics, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan. Shiro.Yamazaki@physik.uni-hamburg.de
authors.forename: Shiro
authors.initials: S
authors.lastname: Yamazaki
authors.forename: Yoshikazu
authors.initials: Y
authors.lastname: Hosomura
authors.forename: Iwao
authors.initials: I
authors.lastname: Matsuda
authors.forename: Rei
authors.initials: R
authors.lastname: Hobara
authors.forename: Toyoaki
authors.initials: T
authors.lastname: Eguchi
authors.forename: Yukio
authors.initials: Y
authors.lastname: Hasegawa
authors.forename: Shuji
authors.initials: S
authors.lastname: Hasegawa