title: Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser.
abstract: We focus on IR sensors with lower reflection for the wavelength around 10 μm, strongly awaited for detecting human bodies. A concave structure was designed as a more suitable reflection-free structure for IR light, and an optical system with a femtosecond laser was employed for verification of the effectiveness of the structure. The microstructures prepared through this process were fabricated and optically measured using SEM, FT-IR, and Raman spectroscopy. The measurement revealed that good reflection-free structures were realized for IR sensors with lower reflection for the wavelength of around 10 μm.
authors.affiliation: Core Technology Center, Omron Corporation, 9-1 Kizugawadai, Kizugawa City, Kyoto 619-0283, Japan. hiroshi_imamoto@omron.co.jp
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Imamoto
authors.forename: Shingo
authors.initials: S
authors.lastname: Kanehira
authors.forename: Xi
authors.initials: X
authors.lastname: Wang
authors.forename: Keisuke
authors.initials: K
authors.lastname: Kametani
authors.forename: Masaaki
authors.initials: M
authors.lastname: Sakakura
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Shimotsuma
authors.forename: Kiyotaka
authors.initials: K
authors.lastname: Miura
authors.forename: Kazuyuki
authors.initials: K
authors.lastname: Hirao