title: Measuring carbon nanotube band gaps through leakage current and excitonic transitions of nanotube diodes.
abstract: The band gap of a semiconductor is one of its most fundamental properties. It is one of the defining parameters for applications, including nanoelectronic and nanophotonic devices. Measuring the band gap, however, has received little attention for quasi-one-dimensional materials, including single-walled carbon nanotubes. Here we show that the current-voltage characteristics of p-n diodes fabricated with semiconducting carbon nanotubes can be used along with the excitonic transitions of the nanotubes to measure both the fundamental (intrinsic) and renormalized nanotube band-gaps.
authors.affiliation: College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York 12203, United States.
authors.forename: Argyrios
authors.initials: A
authors.lastname: Malapanis
authors.forename: David A
authors.initials: DA
authors.lastname: Jones
authors.forename: Everett
authors.initials: E
authors.lastname: Comfort
authors.forename: Ji Ung
authors.initials: JU
authors.lastname: Lee