title: Insulating behavior in ultrathin bismuth selenide field effect transistors.
abstract: Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.
authors.affiliation: Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, United States.
authors.forename: Sungjae
authors.initials: S
authors.lastname: Cho
authors.forename: Nicholas P
authors.initials: NP
authors.lastname: Butch
authors.forename: Johnpierre
authors.initials: J
authors.lastname: Paglione
authors.forename: Michael S
authors.initials: MS
authors.lastname: Fuhrer