title: Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD.
abstract: Well-aligned tilted Zn-doped InN nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. All of the nanorods are symmetrically tilted in two opposite directions. X-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane InN film. The nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. Zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the InN nanomaterials and their properties.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. zhangbiao@semi.ac.cn
authors.forename: Biao
authors.initials: B
authors.lastname: Zhang
authors.forename: Huaping
authors.initials: H
authors.lastname: Song
authors.forename: Xiaoqing
authors.initials: X
authors.lastname: Xu
authors.forename: Jianming
authors.initials: J
authors.lastname: Liu
authors.forename: Jun
authors.initials: J
authors.lastname: Wang
authors.forename: Xianglin
authors.initials: X
authors.lastname: Liu
authors.forename: Shaoyan
authors.initials: S
authors.lastname: Yang
authors.forename: Qinsheng
authors.initials: Q
authors.lastname: Zhu
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang