title: Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.
abstract: A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.
authors.affiliation: Institute of Photonics, SUPA, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G4 0NW, UK. daniele.parrotta@strath.ac.uk
authors.forename: Daniele C
authors.initials: DC
authors.lastname: Parrotta
authors.forename: Walter
authors.initials: W
authors.lastname: Lubeigt
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Kemp
authors.forename: David
authors.initials: D
authors.lastname: Burns
authors.forename: Martin D
authors.initials: MD
authors.lastname: Dawson
authors.forename: Jennifer E
authors.initials: JE
authors.lastname: Hastie