title: Large-scale growth and characterizations of nitrogen-doped monolayer graphene sheets.
abstract: In-plane heteroatom substitution of graphene is a promising strategy to modify its properties. Doping with electron-donor nitrogen heteroatoms can modulate the electronic properties of graphene to produce an n-type semiconductor. Here we demonstrate the growth of monolayer nitrogen-doped graphene in centimeter-scale sheets using a chemical vapor deposition process with pyridine as the sole source of both carbon and nitrogen. High-resolution transmission microscopy and Raman mapping characterizations indicate that the nitrogen-doped graphene sheets are uniformly monolayered. The existence of nitrogen-atom substitution in the graphene planes was confirmed by X-ray photoelectron spectroscopy. Electrical measurements show that the nitrogen-doped graphene exhibits an n-type behavior, different from pristine graphene. The preparation of large-area nitrogen-doped graphene provides a viable route to modify the properties of monolayer graphene and promote its applications in electronic devices.
authors.affiliation: Department of Chemistry, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005, United States.
authors.forename: Zhong
authors.initials: Z
authors.lastname: Jin
authors.forename: Jun
authors.initials: J
authors.lastname: Yao
authors.forename: Carter
authors.initials: C
authors.lastname: Kittrell
authors.forename: James M
authors.initials: JM
authors.lastname: Tour
mesh_terms: D003460:Crystallization / Q000379:methods*; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009584:Nitrogen / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D006108:Graphite; D009584:Nitrogen