title: Intrinsic mechanisms of memristive switching.
abstract: Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Kazuki
authors.initials: K
authors.lastname: Nagashima
authors.forename: Takeshi
authors.initials: T
authors.lastname: Yanagida
authors.forename: Keisuke
authors.initials: K
authors.lastname: Oka
authors.forename: Masaki
authors.initials: M
authors.lastname: Kanai
authors.forename: Annop
authors.initials: A
authors.lastname: Klamchuen
authors.forename: Jin-Soo
authors.initials: JS
authors.lastname: Kim
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park
authors.forename: Tomoji
authors.initials: T
authors.lastname: Kawai