title: Manganese silicide nanowires on Si(001).
abstract: A method for promoting the growth of manganese silicide nanowires on Si(001) at 450 °C is described. The anisotropic surface stress generated by bismuth nanolines blocks the formation of embedded structures and stabilizes the nucleation of manganese silicide islands which grow in a preferred direction, forming nanowires with a band gap of approximately 0.6 eV, matching the reported band gap of MnSi(1.7). This method may also provide a means to form silicide nanowires of other metals where they do not otherwise form.
authors.affiliation: National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: H J
authors.initials: HJ
authors.lastname: Liu
authors.forename: J H G
authors.initials: JH
authors.lastname: Owen
authors.forename: K
authors.initials: K
authors.lastname: Miki
authors.forename: Ch
authors.initials: Ch
authors.lastname: Renner