title: High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers.
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China.
authors.forename: Xiaomu
authors.initials: X
authors.lastname: Wang
authors.forename: Jian-Bin
authors.initials: JB
authors.lastname: Xu
authors.forename: Chengliang
authors.initials: C
authors.lastname: Wang
authors.forename: Jun
authors.initials: J
authors.lastname: Du
authors.forename: Weiguang
authors.initials: W
authors.lastname: Xie
mesh_terms: D004553:Electric Conductivity; D006108:Graphite / Q000737:chemistry*; D012821:Silanes / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D012821:Silanes; D012822:Silicon Dioxide; D006108:Graphite; D012825:Silicon