title: Recent Developments on High Curie Temperature PIN-PMN-PT Ferroelectric Crystals.
abstract: Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k(33)> 90%) and piezoelectric coefficients (d(33)~1500pC/N), when compared to their binary counterpart Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d(33), was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.
authors.affiliation: Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, US.
authors.forename: Shujun
authors.initials: S
authors.lastname: Zhang
authors.forename: Fei
authors.initials: F
authors.lastname: Li
authors.forename: Nevin P
authors.initials: NP
authors.lastname: Sherlock
authors.forename: Jun
authors.initials: J
authors.lastname: Luo
authors.forename: Hyeong Jae
authors.initials: HJ
authors.lastname: Lee
authors.forename: Ru
authors.initials: R
authors.lastname: Xia
authors.forename: Richard J
authors.initials: RJ
authors.lastname: Meyer
authors.forename: Wesley
authors.initials: W
authors.lastname: Hackenberger
authors.forename: Thomas R
authors.initials: TR
authors.lastname: Shrout