title: Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.
abstract: This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.
authors.affiliation: Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States.
authors.forename: Chuan
authors.initials: C
authors.lastname: Wang
authors.forename: Alexander
authors.initials: A
authors.lastname: Badmaev
authors.forename: Alborz
authors.initials: A
authors.lastname: Jooyaie
authors.forename: Mingqiang
authors.initials: M
authors.lastname: Bao
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
authors.forename: Kosmas
authors.initials: K
authors.lastname: Galatsis
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D016014:Linear Models; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D011846:Radio Waves; D012666:Semiconductors; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon