title: p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).
abstract: Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
authors.forename: H P T
authors.initials: HP
authors.lastname: Nguyen
authors.forename: S
authors.initials: S
authors.lastname: Zhang
authors.forename: K
authors.initials: K
authors.lastname: Cui
authors.forename: X
authors.initials: X
authors.lastname: Han
authors.forename: S
authors.initials: S
authors.lastname: Fathololoumi
authors.forename: M
authors.initials: M
authors.lastname: Couillard
authors.forename: G A
authors.initials: GA
authors.lastname: Botton
authors.forename: Z
authors.initials: Z
authors.lastname: Mi