title: f Electron contribution to the change of electronic structure in CeRu2Si2 with temperature: a Compton scattering study.
abstract: High resolution Compton profiles have been measured in the single crystal of CeRu(2)Si(2) above and below the Kondo temperature to elucidate the change of the Ce-4f electron from localized to itinerant states. Two-dimensional electron occupation number densities projected on the first Brillouin zone, which are obtained after a series of analyses, clearly specify the difference between itinerant and localized states. The contribution of Ce-4f electrons to the electronic structure is discussed by contrast with a band calculation.
authors.affiliation: Graduate School of Material Science, University of Hyogo, Hyogo 678-1297, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Koizumi
authors.forename: G
authors.initials: G
authors.lastname: Motoyama
authors.forename: Y
authors.initials: Y
authors.lastname: Kubo
authors.forename: T
authors.initials: T
authors.lastname: Tanaka
authors.forename: M
authors.initials: M
authors.lastname: Itou
authors.forename: Y
authors.initials: Y
authors.lastname: Sakurai