title: High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror.
abstract: A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO₄ laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively.
authors.affiliation: Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Fang-Qin
authors.initials: FQ
authors.lastname: Li
authors.forename: Ke
authors.initials: K
authors.lastname: Liu
authors.forename: Lin
authors.initials: L
authors.lastname: Han
authors.forename: Nan
authors.initials: N
authors.lastname: Zong
authors.forename: Yong
authors.initials: Y
authors.lastname: Bo
authors.forename: Jing-Yuan
authors.initials: JY
authors.lastname: Zhang
authors.forename: Qin-Jun
authors.initials: QJ
authors.lastname: Peng
authors.forename: Da-Fu
authors.initials: DF
authors.lastname: Cui
authors.forename: Zu-Yan
authors.initials: ZY
authors.lastname: Xu