title: Charge-transport in tin-iodide perovskite CH3NH3SnI3: origin of high conductivity.
abstract: The structural and electrical properties of a metal-halide cubic perovskite, CH(3)NH(3)SnI(3), have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.
authors.affiliation: Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan.
authors.forename: Yukari
authors.initials: Y
authors.lastname: Takahashi
authors.forename: Rena
authors.initials: R
authors.lastname: Obara
authors.forename: Zheng-Zhong
authors.initials: ZZ
authors.lastname: Lin
authors.forename: Yukihiro
authors.initials: Y
authors.lastname: Takahashi
authors.forename: Toshio
authors.initials: T
authors.lastname: Naito
authors.forename: Tamotsu
authors.initials: T
authors.lastname: Inabe
authors.forename: Shoji
authors.initials: S
authors.lastname: Ishibashi
authors.forename: Kiyoyuki
authors.initials: K
authors.lastname: Terakura