title: Quantum Hall effect from the topological surface states of strained bulk HgTe.
abstract: We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.
authors.affiliation: Faculty for Physics and Astronomy and Röntgen Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Brüne
authors.forename: C X
authors.initials: CX
authors.lastname: Liu
authors.forename: E G
authors.initials: EG
authors.lastname: Novik
authors.forename: E M
authors.initials: EM
authors.lastname: Hankiewicz
authors.forename: H
authors.initials: H
authors.lastname: Buhmann
authors.forename: Y L
authors.initials: YL
authors.lastname: Chen
authors.forename: X L
authors.initials: XL
authors.lastname: Qi
authors.forename: Z X
authors.initials: ZX
authors.lastname: Shen
authors.forename: S C
authors.initials: SC
authors.lastname: Zhang
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp