title: Broadband terahertz imaging with highly sensitive silicon CMOS detectors.
abstract: This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from ~0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging.
authors.affiliation: CEA-LETI, MINATEC Campus, 38054 Grenoble, France. franz.schuster@cea.fr
authors.forename: Franz
authors.initials: F
authors.lastname: Schuster
authors.forename: Dominique
authors.initials: D
authors.lastname: Coquillat
authors.forename: Hadley
authors.initials: H
authors.lastname: Videlier
authors.forename: Maciej
authors.initials: M
authors.lastname: Sakowicz
authors.forename: Frédéric
authors.initials: F
authors.lastname: Teppe
authors.forename: Laurent
authors.initials: L
authors.lastname: Dussopt
authors.forename: Benoît
authors.initials: B
authors.lastname: Giffard
authors.forename: Thomas
authors.initials: T
authors.lastname: Skotnicki
authors.forename: Wojciech
authors.initials: W
authors.lastname: Knap