title: Ferroelectric gated electrical transport in CdS nanotetrapods.
abstract: Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba(0.7)Sr(0.3)TiO(3) film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Wangyang
authors.initials: W
authors.lastname: Fu
authors.forename: Shengyong
authors.initials: S
authors.lastname: Qin
authors.forename: Lei
authors.initials: L
authors.lastname: Liu
authors.forename: Tae-Hwan
authors.initials: TH
authors.lastname: Kim
authors.forename: Sondra
authors.initials: S
authors.lastname: Hellstrom
authors.forename: Wenlong
authors.initials: W
authors.lastname: Wang
authors.forename: Wenjie
authors.initials: W
authors.lastname: Liang
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai
authors.forename: An-Ping
authors.initials: AP
authors.lastname: Li
authors.forename: Enge
authors.initials: E
authors.lastname: Wang