title: Controlled radiation damage and edge structures in boron nitride membranes.
abstract: We show that hexagonal boron nitride membranes synthesized by chemical exfoliation are more resistant to electron beam irradiation at 80 kV than is graphene, consistent with quantum chemical calculations describing the radiation damage processes. Monolayer hexagonal boron nitride does not form vacancy defects or amorphize during extended electron beam irradiation. Zigzag edge structures are predominant in thin membranes for both a freestanding boron nitride monolayer and for a supported multilayer step edge. We have also determined that the elemental termination species in the zigzag edges is predominantly N.
authors.affiliation: Department of Materials, University of Oxford, Parks Road, Oxford OX13PH, U.K. judy.kim@materials.ox.ac.uk
authors.forename: Judy S
authors.initials: JS
authors.lastname: Kim
authors.forename: Konstantin B
authors.initials: KB
authors.lastname: Borisenko
authors.forename: Valeria
authors.initials: V
authors.lastname: Nicolosi
authors.forename: Angus I
authors.initials: AI
authors.lastname: Kirkland
mesh_terms: D001896:Boron Compounds / Q000737:chemistry* / Q000528:radiation effects*; D003198:Computer Simulation; D004583:Electrons; D008422:Materials Testing; D008567:Membranes, Artificial; D008956:Models, Chemical; D011829:Radiation Dosage
chemical_list: D001896:Boron Compounds; D008567:Membranes, Artificial; C017282:boron nitride