title: Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires.
abstract: Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2 µA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
authors.affiliation: Department of Electrical Engineering, Korea University, Seoul, Korea.
authors.forename: Kwangeun
authors.initials: K
authors.lastname: Kim
authors.forename: Taeho
authors.initials: T
authors.lastname: Moon
authors.forename: Jeongyong
authors.initials: J
authors.lastname: Kim
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim