title: Fabrication of site-controlled quantum dots by spatially selective incorporation of hydrogen in Ga(AsN)/GaAs heterostructures.
authors.affiliation: Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy.
authors.forename: Rinaldo
authors.initials: R
authors.lastname: Trotta
authors.forename: Antonio
authors.initials: A
authors.lastname: Polimeni
authors.forename: Faustino
authors.initials: F
authors.lastname: Martelli
authors.forename: Giorgio
authors.initials: G
authors.lastname: Pettinari
authors.forename: Mario
authors.initials: M
authors.lastname: Capizzi
authors.forename: Laura
authors.initials: L
authors.lastname: Felisari
authors.forename: Silvia
authors.initials: S
authors.lastname: Rubini
authors.forename: Marco
authors.initials: M
authors.lastname: Francardi
authors.forename: Annamaria
authors.initials: A
authors.lastname: Gerardino
authors.forename: Peter C M
authors.initials: PC
authors.lastname: Christianen
authors.forename: Jan C
authors.initials: JC
authors.lastname: Maan
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D006859:Hydrogen / Q000737:chemistry*; D006865:Hydrogenation; D008163:Luminescent Measurements; D036103:Nanotechnology; D045663:Quantum Dots; D013696:Temperature
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D006859:Hydrogen; D005708:Gallium