title: Contact doping and ultrathin gate dielectrics for nanoscale organic thin-film transistors.
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany. F.Ante@fkf.mpg.de
authors.forename: Frederik
authors.initials: F
authors.lastname: Ante
authors.forename: Daniel
authors.initials: D
authors.lastname: Kälblein
authors.forename: Ute
authors.initials: U
authors.lastname: Zschieschang
authors.forename: Tobias W
authors.initials: TW
authors.lastname: Canzler
authors.forename: Ansgar
authors.initials: A
authors.lastname: Werner
authors.forename: Kazuo
authors.initials: K
authors.lastname: Takimiya
authors.forename: Masaaki
authors.initials: M
authors.lastname: Ikeda
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Sekitani
authors.forename: Takao
authors.initials: T
authors.lastname: Someya
authors.forename: Hagen
authors.initials: H
authors.lastname: Klauk
mesh_terms: D036103:Nanotechnology / Q000379:methods*; D014173:Transistors, Electronic