title: Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz.
abstract: We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W.
authors.affiliation: Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany. stefan.spiessberger@fbh-berlin.de
authors.forename: Stefan
authors.initials: S
authors.lastname: Spiessberger
authors.forename: Max
authors.initials: M
authors.lastname: Schiemangk
authors.forename: Alexander
authors.initials: A
authors.lastname: Sahm
authors.forename: Andreas
authors.initials: A
authors.lastname: Wicht
authors.forename: Hans
authors.initials: H
authors.lastname: Wenzel
authors.forename: Achim
authors.initials: A
authors.lastname: Peters
authors.forename: Götz
authors.initials: G
authors.lastname: Erbert
authors.forename: Günther
authors.initials: G
authors.lastname: Tränkle