title: Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.
abstract: Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10(7) and a low subthreshold swing of 60-120 mV dec(-1) are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with surface silanization and biasing with a solution gate rather than a backgate. pH sensing with a linear response over a range of 2-9 is achieved using these devices. Selective detection of bovine serum albumin at concentrations as low as 0.1 femtomolar is demonstrated.
authors.affiliation: Department of Electrical Engineering, University of Texas at Dallas, Richardson, 75080, USA.
authors.forename: Ruhai
authors.initials: R
authors.lastname: Tian
authors.forename: Suresh
authors.initials: S
authors.lastname: Regonda
authors.forename: Jinming
authors.initials: J
authors.lastname: Gao
authors.forename: Yaling
authors.initials: Y
authors.lastname: Liu
authors.forename: Walter
authors.initials: W
authors.lastname: Hu
mesh_terms: D000818:Animals; D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D002417:Cattle; D004867:Equipment Design; D046210:Microfluidic Analytical Techniques / Q000295:instrumentation* / Q000379:methods; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry*; D012710:Serum Albumin, Bovine / Q000032:analysis*; D012825:Silicon
chemical_list: D012710:Serum Albumin, Bovine; D012825:Silicon