title: [Modification and luminescence properties of transparent Lu2SiO5 : Ce3+ thin-film phosphors].
abstract: To achieve high-spatial-resolution for X-ray imaging and flat panel display, transparent thin-film phosphors have been attracted much attention in recent years. In comparison with conventional powder phosphors, the transparent thin-film phosphors have some outstanding advantages such as high contrast and resolution, superior thermal conductivity and better adhesion. Cerium-doped lutetium oxyorthosilicate Lu2 SiO5 (LSO) is one promising candidate due to its high density (7.4 g x cm(-3)), high light yield (27 300 photons x MeV(-1)), short decay time (40 ns), and excellent chemical stability. The sol-gel method is one of the most important techniques for deposition of functional thin films, because it possesses a number of advantages over conventional film formation techniques, such as low processing temperature, easy coating of large surfaces, homogenous multicomponent films, and cheap equipments. In X-ray imaging application, the thickness of the thin-film phosphor is the most important factor, which can increase X-ray absorption of the film and then strengthen its luminescence intensity. In the present work, transparent LSO : Ce film was successfully prepared using sol-gel method and spin-coating technique by using inorganic salts as raw materials, 2-methoxyethanol as solvent, and poly (ethylene glycol) (PEG) as modifier without inert atmosphere. The effect of PEG on the luminescence properties of the film was investigated in detail. The results indicated that PEG200 played an important role in the formation of LSO : Ce film, improving its quality and luminescent intensity. The film thickness of 0.9 microm was achieved after 5 times of coating. The luminescence properties of the film were studied. Their performances were good, which implied that the film would have promising applications in high-spatial-resolution X-ray imaging and flat panel display devices.
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, Department of Physics, Tongji University, Shanghai 200092, China. 0001desun@163.com
authors.forename: Yang-Yang
authors.initials: YY
authors.lastname: Fan
authors.forename: Xiao-Lin
authors.initials: XL
authors.lastname: Liu
authors.forename: Mu
authors.initials: M
authors.lastname: Gu
authors.forename: Chen
authors.initials: C
authors.lastname: Ni
authors.forename: Shi-Ming
authors.initials: SM
authors.lastname: Huang
authors.forename: Bo
authors.initials: B
authors.lastname: Liu