title: Effects of crystal phase mixing on the electrical properties of InAs nanowires.
abstract: We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.
authors.affiliation: Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden. claes.thelander@ftf.lth.se
authors.forename: Claes
authors.initials: C
authors.lastname: Thelander
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Sébastien
authors.initials: S
authors.lastname: Plissard
authors.forename: Anil W
authors.initials: AW
authors.lastname: Dey
authors.forename: Kimberly A
authors.initials: KA
authors.lastname: Dick
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide