title: Controlled growth of well-aligned GaS nanohornlike structures and their field emission properties.
abstract: Here, we report the synthesis of vertically aligned gallium sulfide (GaS) nanohorn arrays using simple vapor-liquid-solid (VLS) method. The morphologies of GaS nano and microstructures are tuned by controlling the temperature and position of the substrate with respect to the source material. A plausible mechanism for the controlled growth has been proposed. It is important to note that the turn-on field value of GaS nanohorns array is found to be the low turn-on field 4.2 V/μm having current density of 0.1 μA/cm(2). The striking feature of the field emission behavior of the GaS nanohorn arrays is that the average emission current remains nearly constant over long time without any degradation.
authors.affiliation: Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur-700 032, Kolkata, India.
authors.forename: Godhuli
authors.initials: G
authors.lastname: Sinha
authors.forename: Subhendu K
authors.initials: SK
authors.lastname: Panda
authors.forename: Anuja
authors.initials: A
authors.lastname: Datta
authors.forename: Padmakar G
authors.initials: PG
authors.lastname: Chavan
authors.forename: Deodatta R
authors.initials: DR
authors.lastname: Shinde
authors.forename: Mahendra A
authors.initials: MA
authors.lastname: More
authors.forename: D S
authors.initials: DS
authors.lastname: Joag
authors.forename: Amitava
authors.initials: A
authors.lastname: Patra
mesh_terms: D005708:Gallium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D010777:Photochemistry / Q000379:methods*
chemical_list: D005708:Gallium