title: Complementary-like graphene logic gates controlled by electrostatic doping.
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan. li.songlin@nims.go.jp
authors.forename: Song-Lin
authors.initials: SL
authors.lastname: Li
authors.forename: Hisao
authors.initials: H
authors.lastname: Miyazaki
authors.forename: Michael V
authors.initials: MV
authors.lastname: Lee
authors.forename: Chuan
authors.initials: C
authors.lastname: Liu
authors.forename: Akinobu
authors.initials: A
authors.lastname: Kanda
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
mesh_terms: D004560:Electricity; D006108:Graphite / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D055672:Static Electricity; D014173:Transistors, Electronic
chemical_list: D012822:Silicon Dioxide; D006108:Graphite