title: Characterization of semiconductor nanowires using optical tweezers.
abstract: We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2-15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires.
authors.affiliation: School of Physics, The University of New South Wales, Sydney, NSW 2052, Australia. p.reece@unsw.edu.au
authors.forename: Peter J
authors.initials: PJ
authors.lastname: Reece
authors.forename: Wen Jun
authors.initials: WJ
authors.lastname: Toe
authors.forename: Fan
authors.initials: F
authors.lastname: Wang
authors.forename: Suriati
authors.initials: S
authors.lastname: Paiman
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: H Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: C
authors.initials: C
authors.lastname: Jagadish
mesh_terms: D053770:Nanowires / Q000737:chemistry*; D052898:Optical Tweezers; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties