title: High voltage pulser with a fast fall-time for plasma immersion ion implantation.
abstract: A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 μs, compared to a fall time of 80 μs if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.
authors.affiliation: State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Zongtao
authors.initials: Z
authors.lastname: Zhu
authors.forename: Chunzhi
authors.initials: C
authors.lastname: Gong
authors.forename: Xiubo
authors.initials: X
authors.lastname: Tian
authors.forename: Shiqin
authors.initials: S
authors.lastname: Yang
authors.forename: Ricky K Y
authors.initials: RK
authors.lastname: Fu
authors.forename: Paul K
authors.initials: PK
authors.lastname: Chu