title: Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons.
authors.affiliation: School of Advanced Materials Engineering, Kookmin University, Seoul, Korea. jangsik@kookmin.ac.kr
authors.forename: Jang-Sik
authors.initials: JS
authors.lastname: Lee
authors.forename: Yong-Mu
authors.initials: YM
authors.lastname: Kim
authors.forename: Jeong-Hwa
authors.initials: JH
authors.lastname: Kwon
authors.forename: Jae Sung
authors.initials: JS
authors.lastname: Sim
authors.forename: Hyunjung
authors.initials: H
authors.lastname: Shin
authors.forename: Byeong-Hyeok
authors.initials: BH
authors.lastname: Sohn
authors.forename: Quanxi
authors.initials: Q
authors.lastname: Jia
mesh_terms: D055615:Electrical Equipment and Supplies; D004583:Electrons; D016247:Information Storage and Retrieval / Q000379:methods*; D053768:Metal Nanoparticles / Q000737:chemistry; D013696:Temperature