title: P-type 3C-SiC nanowires and their optical and electrical transport properties.
abstract: We report for the first time the fabrication of p-type SiC nanowire field-effect transistors (FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.
authors.affiliation: College of Physics Science, Qingdao University, Qingdao, 266071, PR China. chen-yq06@mails.tsinghua.edu.cn
authors.forename: Youqiang
authors.initials: Y
authors.lastname: Chen
authors.forename: Xinni
authors.initials: X
authors.lastname: Zhang
authors.forename: Qing
authors.initials: Q
authors.lastname: Zhao
authors.forename: Li
authors.initials: L
authors.lastname: He
authors.forename: Chengkuang
authors.initials: C
authors.lastname: Huang
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Xie