title: A high frequency sensor for optical beam deflection atomic force microscopy.
abstract: We demonstrate a novel electronic readout for quadrant photodiode based optical beam deflection setups. In our readout, the signals used to calculate the deflections remain as currents, instead of undergoing an immediate conversion to voltages. Bipolar current mirrors are used to perform all mathematical operations at the transistor level, including the signal normalizing division. This method has numerous advantages, leading to significantly simpler designs that avoid large voltage swings and parasitic capacitances. The bandwidth of our readout is solely limited by the capacitance of the quadrant photodiode junctions, making the effective bandwidth a function of the intensity of photocurrents and thus the applied power of the beam deflection laser. Using commercially available components and laser intensities of 1-4 mW we achieved a 3 dB bandwidth of 20 MHz with deflection sensitivities of up to 0.5-1 V/nm and deflection noise levels below 4.5 fm/Hz. Atomic resolution imaging of muscovite mica using FM-AFM in water demonstrates the sensitivity of this novel readout.
authors.affiliation: Nanotechnology Group, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland. enning@alumni.ethz.ch
authors.forename: Raoul
authors.initials: R
authors.lastname: Enning
authors.forename: Dominik
authors.initials: D
authors.lastname: Ziegler
authors.forename: Adrian
authors.initials: A
authors.lastname: Nievergelt
authors.forename: Ralph
authors.initials: R
authors.lastname: Friedlos
authors.forename: Krithika
authors.initials: K
authors.lastname: Venkataramani
authors.forename: Andreas
authors.initials: A
authors.lastname: Stemmer