title: Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps.
abstract: Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel direct-write is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.
authors.affiliation: Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States.
authors.forename: Stephanie E
authors.initials: SE
authors.lastname: Vasko
authors.forename: Adnan
authors.initials: A
authors.lastname: Kapetanović
authors.forename: Vamsi
authors.initials: V
authors.lastname: Talla
authors.forename: Michael D
authors.initials: MD
authors.lastname: Brasino
authors.forename: Zihua
authors.initials: Z
authors.lastname: Zhu
authors.forename: Andreas
authors.initials: A
authors.lastname: Scholl
authors.forename: Jessica D
authors.initials: JD
authors.lastname: Torrey
authors.forename: Marco
authors.initials: M
authors.lastname: Rolandi
mesh_terms: D001713:Biphenyl Compounds / Q000737:chemistry; D005857:Germanium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D015394:Molecular Structure; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D001713:Biphenyl Compounds; D005857:Germanium; D012825:Silicon