title: Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.
abstract: The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO(2)-based resistive memory devices has been investigated. Compared with the Cu/ZrO(2)/Pt structure device, by embedding a thin TiO(x) layer between the ZrO(2) and the Cu top electrode, the Cu/TiO(x)-ZrO(2)/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO(x)-ZrO(2)/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
authors.affiliation: Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China.
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Shibing
authors.initials: S
authors.lastname: Long
authors.forename: Hangbing
authors.initials: H
authors.lastname: Lv
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.forename: Yan
authors.initials: Y
authors.lastname: Wang
authors.forename: Sen
authors.initials: S
authors.lastname: Zhang
authors.forename: Wentai
authors.initials: W
authors.lastname: Lian
authors.forename: Ming
authors.initials: M
authors.lastname: Wang
authors.forename: Kangwei
authors.initials: K
authors.lastname: Zhang
authors.forename: Hongwei
authors.initials: H
authors.lastname: Xie
authors.forename: Su
authors.initials: S
authors.lastname: Liu
authors.forename: Ming
authors.initials: M
authors.lastname: Liu