title: Growth of horizontally aligned dense carbon nanotubes from trench sidewalls.
abstract: Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNT cantilevers/bridges were grown from selected trench sidewalls in silicon substrate by chemical vapor deposition (CVD). The as-grown CNT cantilevers/bridges are packed with multiwalled carbon nanotubes (MWCNTs) with a linear density of about 10 CNTs µm(-1). The excellent horizontal alignment of these CNTs is mainly ascribed to the van der Waals interactions within the dense CNT bundles. What is more, the Raman intensity ratio I(G)/I(D) shows a gradual increase from the CNT roots to tips, indicating a defect gradient along CNTs generated during their growth. These results will inspire further efforts to explore the fundamentals and applications of HADCNTs.
authors.affiliation: School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore.
authors.forename: Jingyu
authors.initials: J
authors.lastname: Lu
authors.forename: Jianmin
authors.initials: J
authors.lastname: Miao
authors.forename: Ting
authors.initials: T
authors.lastname: Xu
authors.forename: Bin
authors.initials: B
authors.lastname: Yan
authors.forename: Ting
authors.initials: T
authors.lastname: Yu
authors.forename: Zexiang
authors.initials: Z
authors.lastname: Shen