title: Curved silicon nanowires with ribbon-like cross sections by metal-assisted chemical etching.
abstract: A generic process for the preparation of curved silicon nanowires (SiNWs) with ribbon-like cross sections was developed. The present synthetic approach is based on chemical etching of (100)-oriented silicon wafers in mixture solutions of HF and H(2)O(2) by using patterned thin gold films as catalyst and provides a unique opportunity for the fabrication of extended arrays of zigzag SiNWs, ultrathin straight [111] SiNWs, and curved SiNWs with controlled turning angles. On the basis of our experiments performed under various etching conditions, the factors governing the axial crystal orientation and morphology of SiNWs were systematically analyzed. We proposed a model that explains the formation of the present novel silicon nanostructures during chemical etching of silicon.
authors.affiliation: Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon, Korea.
authors.forename: Jungkil
authors.initials: J
authors.lastname: Kim
authors.forename: Young Heon
authors.initials: YH
authors.lastname: Kim
authors.forename: Suk-Ho
authors.initials: SH
authors.lastname: Choi
authors.forename: Woo
authors.initials: W
authors.lastname: Lee