title: Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
abstract: Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
authors.affiliation: School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom. mayorov@gmail.com
authors.forename: Alexander S
authors.initials: AS
authors.lastname: Mayorov
authors.forename: Roman V
authors.initials: RV
authors.lastname: Gorbachev
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Morozov
authors.forename: Liam
authors.initials: L
authors.lastname: Britnell
authors.forename: Rashid
authors.initials: R
authors.lastname: Jalil
authors.forename: Leonid A
authors.initials: LA
authors.lastname: Ponomarenko
authors.forename: Peter
authors.initials: P
authors.lastname: Blake
authors.forename: Kostya S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: A K
authors.initials: AK
authors.lastname: Geim
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
chemical_list: D001896:Boron Compounds; C017282:boron nitride; D006108:Graphite