title: SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory.
abstract: This study examined the various physical, structural and electrical properties of SiO(2) doped Ge(2)Sb(2)Te(5) (SGST) films for phase change random access memory applications. Interestingly, SGST had a layered structure (LS) resulting from the inhomogeneous distribution of SiO(2) after annealing. The physical parameters able to affect the reset current of phase change memory (I(res)) were predicted from the Joule heating and heat conservation equations. When SiO(2) was doped into GST, thermal conductivity largely decreased by ∼ 55%. The influence of SiO(2)-doping on I(res) was examined using the test phase change memory cell. I(res) was reduced by ∼ 45%. An electro-thermal simulation showed that the reduced thermal conductivity contributes to the improvement of cell efficiency as well as the reduction of I(res), while the increased dynamic resistance contributes only to the latter. The formation and presence of the LS thermal conductivity in the set state test cell after repeated switching was confirmed.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.
authors.forename: Seung Wook
authors.initials: SW
authors.lastname: Ryu
authors.forename: Ho-Ki
authors.initials: HK
authors.lastname: Lyeo
authors.forename: Jong Ho
authors.initials: JH
authors.lastname: Lee
authors.forename: Young Bae
authors.initials: YB
authors.lastname: Ahn
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Choon Hwan
authors.initials: CH
authors.lastname: Kim
authors.forename: Soo Gil
authors.initials: SG
authors.lastname: Kim
authors.forename: Se-Ho
authors.initials: SH
authors.lastname: Lee
authors.forename: Ka Young
authors.initials: KY
authors.lastname: Kim
authors.forename: Jong Hyeop
authors.initials: JH
authors.lastname: Kim
authors.forename: Won
authors.initials: W
authors.lastname: Kim
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang
authors.forename: Hyeong Joon
authors.initials: HJ
authors.lastname: Kim