title: Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods.
abstract: We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.
authors.affiliation: Institute of Solid State Physics-Semiconductor Epitaxy-University of Bremen, Bremen, Germany. kunert@ifp.uni-bremen.de
authors.forename: G
authors.initials: G
authors.lastname: Kunert
authors.forename: W
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authors.lastname: Freund
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authors.lastname: Aschenbrenner
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authors.lastname: Kruse
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authors.lastname: Figge
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authors.lastname: Schowalter
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authors.lastname: Rosenauer
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authors.lastname: Kalden
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authors.lastname: Sebald
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authors.lastname: Gutowski
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authors.lastname: Feneberg
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authors.lastname: Tischer
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authors.lastname: Fujan
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authors.lastname: Thonke
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authors.lastname: Hommel