title: Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.
abstract: Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr(0.2)Ti(0.8)O(3)/La(1 - x)Sr(x)MnO(3) (PZT/LSMO), PZT/La(1 - x)Ca(x)MnO(3) (PZT/LCMO) and PZT/La(1 - x)Sr(x)CoO(3) (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.
authors.affiliation: Department of Applied Physics and CRISP, Yale University, New Haven, CT 06511, USA. jason.hoffman@yale.edu
authors.forename: J
authors.initials: J
authors.lastname: Hoffman
authors.forename: X
authors.initials: X
authors.lastname: Hong
authors.forename: C H
authors.initials: CH
authors.lastname: Ahn