title: Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy.
abstract: The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.
authors.affiliation: School of Computer Science, The University of Manchester, Manchester, UK. aravind@cs.man.ac.uk
authors.forename: Aravind
authors.initials: A
authors.lastname: Vijayaraghavan
authors.forename: Marina Y
authors.initials: MY
authors.lastname: Timmermans
authors.forename: Kestutis
authors.initials: K
authors.lastname: Grigoras
authors.forename: Albert G
authors.initials: AG
authors.lastname: Nasibulin
authors.forename: Esko I
authors.initials: EI
authors.lastname: Kauppinen
authors.forename: Ralph
authors.initials: R
authors.lastname: Krupke