title: A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure.
abstract: The detailed mechanism of electronic bipolar resistance switching (BRS) in the Pt/TiO(2)/Pt structure was examined. The conduction mechanism analysis showed that the trap-free and trap-mediated space-charge-limited conduction (SCLC) governs the low and high resistance state of BRS, respectively. The SCLC was confirmed by fitting the current-voltage characteristics of low and high resistance states at various temperatures. The BRS behavior originated from the asymmetric potential barrier for electrons escaping from, and trapping into, the trap sites with respect to the bias polarity. This asymmetric potential barrier was formed at the interface between the trap layer and trap-free layer. The detailed parameters such as trap density, and trap layer and trap-free layer thicknesses in the electronic BRS were evaluated. This showed that the degradation in the switching performance could be understood from the decrease and modified distribution of the trap densities in the trap layer.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.forename: Byung Joon
authors.initials: BJ
authors.lastname: Choi
authors.forename: Min Hwan
authors.initials: MH
authors.lastname: Lee
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Seul Ji
authors.initials: SJ
authors.lastname: Song
authors.forename: Jun Yeong
authors.initials: JY
authors.lastname: Seok
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Yoon
authors.forename: Seungwu
authors.initials: S
authors.lastname: Han
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang