title: Activation energies for diffusion of defects in silicon: the role of the exchange-correlation functional.
authors: Physics Department, Texas Tech University, Lubbock, TX 79409-1051, USA. stefan.estreicher@ttu.edu
authors: Stefan K
authors: SK
authors: Estreicher
authors: Daniel J
authors: DJ
authors: Backlund
authors: Christian
authors: C
authors: Carbogno
authors: Matthias
authors: M
authors: Scheffler