title: Strong Narrow-Band Luminescence from Silicon-Vacancy Color Centers in Spatially Localized Sub-10 nm Nanodiamond.
abstract: Discrete nanodiamond particles of 500 nm and 6 nm average size were seeded onto silicon substrates and plasma treated using chemical vapor deposition to create silicon-vacancy color centers. The resulting narrow-band room temperature photoluminescence is intense, and readily observed even for weakly agglomerated sub-10 nm size diamond. This is in contrast to the well-studied nitrogen-vacancy center in diamond which has luminescence properties that are strongly dependant on particle size, with low probability for incorporation of centers in sub-10 nm crystals. We suggest the silicon-vacancy center to be a viable alternative to nitrogen-vacancy defects for use as a biomarker in the clinically-relevant sub-10 nm size regime, for which nitrogen defect-related luminescent activity and stability is reportedly poor.
authors: Center for Nanoscale Materials and Biointegration (CNMB), University of Alabama at Birmingham, Department of Physics, Birmingham, Alabama 35294-1170, USA.
authors: Shane A
authors: SA
authors: Catledge
authors: Sonal
authors: S
authors: Singh
references: J Nanosci Nanotechnol. 2009 Jul;9(7):4197-201
references: 19916429
references: Small. 2009 Jul;5(14):1649-53
references: 19334016
references: Environ Health Perspect. 2006 Feb;114(2):165-72
references: 16451849
references: Nanotechnology. 2009 Jun 10;20(23):235602
references: 19451687
references: Nano Lett. 2009 Oct;9(10):3555-64
references: 19705805
references: ACS Nano. 2009 Dec 22;3(12):3955-62
references: 19863087
references: Nano Lett. 2005 Feb;5(2):331-8
references: 15794621
references: Expert Opin Drug Deliv. 2009 Sep;6(9):883-95
references: 19637985
references: Nat Nanotechnol. 2010 May;5(5):345-9
references: 20383128
references: Science. 2005 Jan 28;307(5709):538-44
references: 15681376
references: J Nanosci Nanotechnol. 2010 Jul;10(7):4286-92
references: 21128413
references: Nano Lett. 2007 Nov;7(11):3433-7
references: 17902725
references: J Nanosci Nanotechnol. 2009 Jun;9(6):3524-34
references: 19504878
references: J Nanosci Nanotechnol. 2010 Apr;10(4):2422-33
references: 20355444
references: J Nanosci Nanotechnol. 2010 Apr;10(4):2735-40
references: 20355493
references: Small. 2010 Mar 8;6(5):687-94
references: 20108229