title: Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments.
abstract: We report an improvement in minimizing the dispersion of resistive switching (RS) parameters such as ON/OFF state resistances and switching voltages of Cu/ZnO/Pt structures in which ZnO films have been deposited at elevated temperature with N doping. This deposition process can enlarge the ZnO grain size and lessen grain boundaries while maintaining a high initial resistance since ZnO naturally shows n-type conductivity and N is a p-type dopant but with a low solubility. Cu filaments with a diameter of 15 nm are found to form at the ZnO grain boundaries. Therefore, fewer grain boundaries could depress the randomicity of the formation/rupture of Cu filaments and result in more stable RS performances. Such memory devices show a fast programming speed of 10 ns.
authors: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
authors: Fei
authors: F
authors: Zhuge
authors: Shanshan
authors: S
authors: Peng
authors: Congli
authors: C
authors: He
authors: Xiaojian
authors: X
authors: Zhu
authors: Xinxin
authors: X
authors: Chen
authors: Yiwei
authors: Y
authors: Liu
authors: Run-Wei
authors: RW
authors: Li