title: Impurity effect on weak antilocalization in the topological insulator Bi2Te3.
abstract: We study the weak antilocalization (WAL) effect in topological insulator Bi(2)Te(3) thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi(2)Te(3) film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.
authors: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
authors: Hong-Tao
authors: HT
authors: He
authors: Gan
authors: G
authors: Wang
authors: Tao
authors: T
authors: Zhang
authors: Iam-Keong
authors: IK
authors: Sou
authors: George K L
authors: GK
authors: Wong
authors: Jian-Nong
authors: JN
authors: Wang
authors: Hai-Zhou
authors: HZ
authors: Lu
authors: Shun-Qing
authors: SQ
authors: Shen
authors: Fu-Chun
authors: FC
authors: Zhang