title: Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide.
abstract: The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O(2), by means of electric double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.
authors: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors: Y
authors: Y
authors: Yamada
authors: K
authors: K
authors: Ueno
authors: T
authors: T
authors: Fukumura
authors: H T
authors: HT
authors: Yuan
authors: H
authors: H
authors: Shimotani
authors: Y
authors: Y
authors: Iwasa
authors: L
authors: L
authors: Gu
authors: S
authors: S
authors: Tsukimoto
authors: Y
authors: Y
authors: Ikuhara
authors: M
authors: M
authors: Kawasaki