title: On the secondary droplets of self-running gallium droplets on GaAs surface.
abstract: Self-running droplets by thermal evaporation GaAs (001) surface are studied and analyzed using a scanning electron microscope. The sample is prepared under high-temperature annealing in an ultrahigh vacuum molecular beam epitaxy system. Particularly, secondary droplets which formed along primary droplet running trails are investigated. The secondary droplets are found to initially move along the [1 ̅10] instead of [110] direction, but these droplets tend to turn into [110] direction as they grow bigger. The scanning electron microscope also captures nanoscale footprints of secondary droplets different from the main droplets.
authors: Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.
authors: Jiang
authors: J
authors: Wu
authors: Zhiming M
authors: ZM
authors: Wang
authors: Alvason Z
authors: AZ
authors: Li
authors: Mourad
authors: M
authors: Benamara
authors: Gregory J
authors: GJ
authors: Salamo