title: High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.
abstract: We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires directly on Si(111) with a near-perfect vertical yield, using electron-beam-defined arrays of holes in a dielectric layer and molecular beam epitaxy. In our conditions, GaAs nanowires are grown along a vapor-liquid-solid mechanism, using in situ self-forming Ga droplets. The focus of this paper is to understand the role of the substrate preparation and of the pre-growth conditioning. Without changing temperature or the V/III ratio, the yield of vertical nanowires is increased incrementally up to 95%. The possibility to achieve very dense arrays, with center-to-center inter-wire distances less than 100 nm, is demonstrated.
authors: Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, avenue Poincaré, BP 60069, F-59652 Villeneuve d'Ascq, France. s.r.plissard@tue.nl
authors: S
authors: S
authors: Plissard
authors: G
authors: G
authors: Larrieu
authors: X
authors: X
authors: Wallart
authors: P
authors: P
authors: Caroff