title: Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy.
abstract: We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1-xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett 61, 557-559].
authors: Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain. david.hernandez@uca.es
authors: David
authors: D
authors: Hernández-Maldonado
authors: Miriam
authors: M
authors: Herrera
authors: Pablo
authors: P
authors: Alonso-González
authors: Yolanda
authors: Y
authors: González
authors: Luisa
authors: L
authors: González
authors: Jaume
authors: J
authors: Gazquez
authors: María
authors: M
authors: Varela
authors: Stephen J
authors: SJ
authors: Pennycook
authors: María de la Paz
authors: Mde L
authors: Guerrero-Lebrero
authors: Joaquín
authors: J
authors: Pizarro
authors: Pedro L
authors: PL
authors: Galindo
authors: Sergio I
authors: SI
authors: Molina