title: Hydrogen-induced passivation of boron acceptors in monocrystalline and polycrystalline diamond.
abstract: This paper presents a review of the properties induced by the presence of hydrogen in monocrystalline boron-doped diamond (BDD) and proposes a comparison with results obtained on polycrystalline materials. Hydrogen diffusion, luminescence and electrical properties show the passivation of boron acceptors in diamond by the formation of (B,H) complexes, in both monocrystalline and polycrystalline forms, but at a different level. This behaviour raises open questions concerning the role of structural defects in the passivation of boron impurities by hydrogenation. Based on the assessment of the high thermal stability of (B,H) complexes, this approach leads to a route to provide patterned diamond conductive structures for micro as well as for nanotechnology applications.
authors: Groupe d'Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin and CNRS, 1 pl. A. Briand, 92195 Meudon, France. julien.barjon@uvsq.fr
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authors: Barjon
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authors: Habka
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authors: Chevallier
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authors: Jomard
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authors: Chikoidze
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authors: Mer-Calfati
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authors: Bergonzo
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