title: Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.
abstract: We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).
authors: Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. alben@math.gatech.edu
authors: Jesper
authors: J
authors: Wallentin
authors: Kilian
authors: K
authors: Mergenthaler
authors: Martin
authors: M
authors: Ek
authors: L Reine
authors: LR
authors: Wallenberg
authors: Lars
authors: L
authors: Samuelson
authors: Knut
authors: K
authors: Deppert
authors: Mats-Erik
authors: ME
authors: Pistol
authors: Magnus T
authors: MT
authors: Borgström