title: Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001).
abstract: The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.
authors.affiliation: L-NESS and Materials Science Department, University of Milano-Bicocca, Via R Cozzi 53, I-20125 Milano, Italy. roberto.bergamaschini@mater.unimib.it
authors.forename: R
authors.initials: R
authors.lastname: Bergamaschini
authors.forename: M
authors.initials: M
authors.lastname: Brehm
authors.forename: M
authors.initials: M
authors.lastname: Grydlik
authors.forename: T
authors.initials: T
authors.lastname: Fromherz
authors.forename: G
authors.initials: G
authors.lastname: Bauer
authors.forename: F
authors.initials: F
authors.lastname: Montalenti