title: Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors.
abstract: Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH(3) sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.
authors.affiliation: Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53211, USA.
authors.forename: Ganhua
authors.initials: G
authors.lastname: Lu
authors.forename: Kehan
authors.initials: K
authors.lastname: Yu
authors.forename: Leonidas E
authors.initials: LE
authors.lastname: Ocola
authors.forename: Junhong
authors.initials: J
authors.lastname: Chen