title: n-InAs nanopyramids fully integrated into silicon.
abstract: InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. s.prucnal@hzdr.de
authors.forename: Slawomir
authors.initials: S
authors.lastname: Prucnal
authors.forename: Stefan
authors.initials: S
authors.lastname: Facsko
authors.forename: Christine
authors.initials: C
authors.lastname: Baumgart
authors.forename: Heidemarie
authors.initials: H
authors.lastname: Schmidt
authors.forename: Maciej Oskar
authors.initials: MO
authors.lastname: Liedke
authors.forename: Lars
authors.initials: L
authors.lastname: Rebohle
authors.forename: Artem
authors.initials: A
authors.lastname: Shalimov
authors.forename: Helfried
authors.initials: H
authors.lastname: Reuther
authors.forename: Aloke
authors.initials: A
authors.lastname: Kanjilal
authors.forename: Arndt
authors.initials: A
authors.lastname: Mücklich
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.forename: Jerzy
authors.initials: J
authors.lastname: Zuk
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D007204:Indium; D012822:Silicon Dioxide; C076773:indium arsenide; D012825:Silicon