title: Hybrid III-V semiconductor/silicon nanolaser.
abstract: Heterogeneous integration of III-V compound semiconductors on Silicon on Insulator is one the key technology for next-generation on-chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon-On-Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.
authors.affiliation: Laboratoire de Photonique et de Nanostructures, CNRS-UPR20, Route de Nozay, 91460 Marcoussis, France.
authors.forename: Y
authors.initials: Y
authors.lastname: Halioua
authors.forename: A
authors.initials: A
authors.lastname: Bazin
authors.forename: P
authors.initials: P
authors.lastname: Monnier
authors.forename: T J
authors.initials: TJ
authors.lastname: Karle
authors.forename: G
authors.initials: G
authors.lastname: Roelkens
authors.forename: I
authors.initials: I
authors.lastname: Sagnes
authors.forename: R
authors.initials: R
authors.lastname: Raj
authors.forename: F
authors.initials: F
authors.lastname: Raineri