title: Suppression of inhomogeneous segregation in graphene growth on epitaxial metal films.
abstract: Large-scale uniform graphene growth was achieved by suppressing inhomogeneous carbon segregation using a single domain Ru film epitaxially grown on a sapphire substrate. An investigation of how the metal thickness affected growth and a comparative study on metals with different crystal structures have revealed that locally enhanced carbon segregation at stacking domain boundaries of metal is the origin of inhomogeneous graphene growth. Single domain Ru film has no stacking domain boundary, and the graphene growth on it is mainly caused not by segregation but by a surface catalytic reaction. Suppression of local segregation is essential for uniform graphene growth on epitaxial metal films.
authors.affiliation: Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan. yoshii.shigeo@jp.panasonic.com
authors.forename: Shigeo
authors.initials: S
authors.lastname: Yoshii
authors.forename: Katsuya
authors.initials: K
authors.lastname: Nozawa
authors.forename: Kenji
authors.initials: K
authors.lastname: Toyoda
authors.forename: Nozomu
authors.initials: N
authors.lastname: Matsukawa
authors.forename: Akihiro
authors.initials: A
authors.lastname: Odagawa
authors.forename: Ayumu
authors.initials: A
authors.lastname: Tsujimura
mesh_terms: D006108:Graphite / Q000737:chemistry*; D008567:Membranes, Artificial; D036103:Nanotechnology; D010316:Particle Size; D012428:Ruthenium / Q000737:chemistry*; D013059:Spectrum Analysis, Raman; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D006108:Graphite; D012428:Ruthenium