title: Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation.
abstract: A new plasma process, i.e. a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO(2) thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO(2) matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.
authors.affiliation: Solar Cell Center, Energy Division, Korea Institute of Science and Technology, Hawolgok 39-1, Seoul 136-791, Republic of Korea.
authors.forename: Jun-Hong
authors.initials: JH
authors.lastname: Jeon
authors.forename: Jin-Young
authors.initials: JY
authors.lastname: Choi
authors.forename: Won-Woong
authors.initials: WW
authors.lastname: Park
authors.forename: Sun-Woo
authors.initials: SW
authors.lastname: Moon
authors.forename: Kyoung-Won
authors.initials: KW
authors.lastname: Park
authors.forename: Sang-Ho
authors.initials: SH
authors.lastname: Lim
authors.forename: Seung-Hee
authors.initials: SH
authors.lastname: Han