title: Characterization of highly stable mid-IR, GaSb-based laser diodes.
abstract: Highly stable room-temperature, mid-IR, GaSb-based laser diodes have been characterized at various temperatures and driver currents. Up to 54 mW of output power was demonstrated in a 3150- to 3180-nm-wavelength range with <20-nm FWHM spectral width.
authors.affiliation: Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, NY 14623, USA. aoki@lle.rochester.edu
authors.forename: A V
authors.initials: AV
authors.lastname: Okishev