title: Self-aligned sub-10-nm nanogap electrode array for large-scale integration.
abstract: A novel approach to creating a gap on the nanometer scale between two adjacent electrodes of the same or different metals is described. The gap size can be well controlled through sidewall coverage in a self-aligned manner and it can be tuned from 60 nm down to 5 nm with high reproducibility. This technique is fully compatible with traditional microfabrication technology and it is easily implemented to fabricate a nanogap electrode array for integration purposes. An array of short-channel single-walled carbon nanotube field-effect transistors is demonstrated.
authors.affiliation: Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
authors.forename: Pingqi
authors.initials: P
authors.lastname: Gao
authors.forename: Qing
authors.initials: Q
authors.lastname: Zhang
authors.forename: Hong
authors.initials: H
authors.lastname: Li
authors.forename: Mary B
authors.initials: MB
authors.lastname: Chan-Park
mesh_terms: D004566:Electrodes; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry / Q000648:ultrastructure; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon