title: 36 GHz submicron silicon waveguide germanium photodetector.
abstract: We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge. By optimizing Ge thickness and offsetting the contact window, we have demonstrated that the responsivity can be improved from 0.6A/W to 0.95 A/W at 1550 nm with 36 GHz 3 dB bandwidth. We also demonstrate that a wider device with double offset contacts can achieve 1.05 A/W responsivity at 1550 nm and 20 GHz 3 dB bandwidth.
authors.affiliation: Kotura Inc, 2630 Corporate Place, Monterey Park, CA 91754, USA. sliao@kotura.com
authors.forename: Shirong
authors.initials: S
authors.lastname: Liao
authors.forename: Ning-Ning
authors.initials: NN
authors.lastname: Feng
authors.forename: Dazeng
authors.initials: D
authors.lastname: Feng
authors.forename: Po
authors.initials: P
authors.lastname: Dong
authors.forename: Roshanak
authors.initials: R
authors.lastname: Shafiiha
authors.forename: Cheng-Chih
authors.initials: CC
authors.lastname: Kung
authors.forename: Hong
authors.initials: H
authors.lastname: Liang
authors.forename: Wei
authors.initials: W
authors.lastname: Qian
authors.forename: Yong
authors.initials: Y
authors.lastname: Liu
authors.forename: Joan
authors.initials: J
authors.lastname: Fong
authors.forename: John E
authors.initials: JE
authors.lastname: Cunningham
authors.forename: Ying
authors.initials: Y
authors.lastname: Luo
authors.forename: Mehdi
authors.initials: M
authors.lastname: Asghari