title: Laser erasable implanted gratings for integrated silicon photonics.
abstract: In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000µm. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.
authors.affiliation: Advanced Technology Institute, University of Surrey, Guildford GU27XH, United Kingdom. enzo.loiacono@surrey.ac.uk
authors.forename: Renzo
authors.initials: R
authors.lastname: Loiacono
authors.forename: Graham T
authors.initials: GT
authors.lastname: Reed
authors.forename: Goran Z
authors.initials: GZ
authors.lastname: Mashanovich
authors.forename: Russell
authors.initials: R
authors.lastname: Gwilliam
authors.forename: Simon J
authors.initials: SJ
authors.lastname: Henley
authors.forename: Youfang
authors.initials: Y
authors.lastname: Hu
authors.forename: Ran
authors.initials: R
authors.lastname: Feldesh
authors.forename: Richard
authors.initials: R
authors.lastname: Jones