title: Integrated GaN photonic circuits on silicon (100) for second harmonic generation.
abstract: We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The χ2 nonlinear susceptibility is measured to be as high as 16 ± 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of χ2 enabled sum-/difference-frequency processes.
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA.
authors.forename: Chi
authors.initials: C
authors.lastname: Xiong
authors.forename: Wolfram
authors.initials: W
authors.lastname: Pernice
authors.forename: Kevin K
authors.initials: KK
authors.lastname: Ryu
authors.forename: Carsten
authors.initials: C
authors.lastname: Schuck
authors.forename: King Y
authors.initials: KY
authors.lastname: Fong
authors.forename: Tomas
authors.initials: T
authors.lastname: Palacios
authors.forename: Hong X
authors.initials: HX
authors.lastname: Tang