title: X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.
abstract: For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.
authors.affiliation: Institute for Semiconductor Physics, Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria. Nina.Hrauda@jku.at
authors.forename: Nina
authors.initials: N
authors.lastname: Hrauda
authors.forename: Jianjun
authors.initials: J
authors.lastname: Zhang
authors.forename: Eugen
authors.initials: E
authors.lastname: Wintersberger
authors.forename: Tanja
authors.initials: T
authors.lastname: Etzelstorfer
authors.forename: Bernhard
authors.initials: B
authors.lastname: Mandl
authors.forename: Julian
authors.initials: J
authors.lastname: Stangl
authors.forename: Dina
authors.initials: D
authors.lastname: Carbone
authors.forename: Vaclav
authors.initials: V
authors.lastname: Holý
authors.forename: Vladimir
authors.initials: V
authors.lastname: Jovanović
authors.forename: Cleber
authors.initials: C
authors.lastname: Biasotto
authors.forename: Lis K
authors.initials: LK
authors.lastname: Nanver
authors.forename: Jürgen
authors.initials: J
authors.lastname: Moers
authors.forename: Detlev
authors.initials: D
authors.lastname: Grützmacher
authors.forename: Günther
authors.initials: G
authors.lastname: Bauer
mesh_terms: D005857:Germanium / Q000737:chemistry*; D036103:Nanotechnology; D010316:Particle Size; D045663:Quantum Dots; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic; D014965:X-Rays
chemical_list: D005857:Germanium; D012825:Silicon