title: Valley-dependent Brewster angles and Goos-Hänchen effect in strained graphene.
abstract: We demonstrate theoretically how local strains in graphene can be tailored to generate a valley-polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K' valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China.
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Wu
authors.forename: F
authors.initials: F
authors.lastname: Zhai
authors.forename: F M
authors.initials: FM
authors.lastname: Peeters
authors.forename: H Q
authors.initials: HQ
authors.lastname: Xu
authors.forename: Kai
authors.initials: K
authors.lastname: Chang