title: Photolithographically fabricated low-loss asymmetric silicon slot waveguides.
abstract: We demonstrate low-loss asymmetric slot waveguides in silicon-on-insulator (SOI). 130 and 180 nm wide slots were fabricated with a 248 nm stepper, in 200 nm thick silicon. An asymmetric waveguide design is shown to expand the range in which the TE0 mode is guided and suppress the TE1 mode, while still maintaining a sharp concentration of electric field in the center of the slot. Optical propagation losses of 2 dB/cm or less are shown for asymmetric slot waveguides with 130 nm wide slots and 320 and 100 nm wide arms.
authors.affiliation: Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle, Washington 98195, USA. aspott@u.washington.edu
authors.forename: Alexander
authors.initials: A
authors.lastname: Spott
authors.forename: Tom
authors.initials: T
authors.lastname: Baehr-Jones
authors.forename: Ran
authors.initials: R
authors.lastname: Ding
authors.forename: Yang
authors.initials: Y
authors.lastname: Liu
authors.forename: Richard
authors.initials: R
authors.lastname: Bojko
authors.forename: Trevor
authors.initials: T
authors.lastname: O'Malley
authors.forename: Andrew
authors.initials: A
authors.lastname: Pomerene
authors.forename: Craig
authors.initials: C
authors.lastname: Hill
authors.forename: Wesley
authors.initials: W
authors.lastname: Reinhardt
authors.forename: Michael
authors.initials: M
authors.lastname: Hochberg