title: One-step Ge/Si epitaxial growth.
abstract: Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China.
authors.forename: Hung-Chi
authors.initials: HC
authors.lastname: Wu
authors.forename: Bi-Hsuan
authors.initials: BH
authors.lastname: Lin
authors.forename: Huang-Chin
authors.initials: HC
authors.lastname: Chen
authors.forename: Po-Chin
authors.initials: PC
authors.lastname: Chen
authors.forename: Hwo-Shuenn
authors.initials: HS
authors.lastname: Sheu
authors.forename: I-Nan
authors.initials: IN
authors.lastname: Lin
authors.forename: Hsin-Tien
authors.initials: HT
authors.lastname: Chiu
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Lee