title: High speed terahertz modulation from metamaterials with embedded high electron mobility transistors.
abstract: We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate switching values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz). Our results demonstrate the viability of incorporating metamaterials into mature semiconductor technologies and establish a new path toward achieving electrically tunable THz devices.
authors.affiliation: Department of Physics, Boston College, 140 Commonwealth Avenue, Chestnut Hill, Massachusetts 02467, USA.
authors.forename: David
authors.initials: D
authors.lastname: Shrekenhamer
authors.forename: Saroj
authors.initials: S
authors.lastname: Rout
authors.forename: Andrew C
authors.initials: AC
authors.lastname: Strikwerda
authors.forename: Chris
authors.initials: C
authors.lastname: Bingham
authors.forename: Richard D
authors.initials: RD
authors.lastname: Averitt
authors.forename: Sameer
authors.initials: S
authors.lastname: Sonkusale
authors.forename: Willie J
authors.initials: WJ
authors.lastname: Padilla