title: Design rules for p-i-n diode carriers sweeping in nano-rib waveguides on SOI.
abstract: In this paper we present a detailed analysis of the carrier lifetime for a p-i-n junction on silicon nano-rib waveguides. Several factors determining efficiency of carriers removal from the waveguiding region will be discussed. We compare different structure geometries and spacings between p and n doped regions to show the way to optimize electrons and holes sweeping for CW nonlinear optical devices.
authors.affiliation: Technische Universität Berlin, Fachgebiet Hochfrequenztechnik, Einsteinufer 25, 10587 Berlin, Germany. andrzej.gajda@tu-berlin.de
authors.forename: Andrzej
authors.initials: A
authors.lastname: Gajda
authors.forename: Lars
authors.initials: L
authors.lastname: Zimmermann
authors.forename: J
authors.initials: J
authors.lastname: Bruns
authors.forename: B
authors.initials: B
authors.lastname: Tillack
authors.forename: K
authors.initials: K
authors.lastname: Petermann