title: InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination.
abstract: Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs-InP APDs with different thicknesses of multiplication layer. The effect of the diffusion process, the generation-recombination process, the tunneling process and the multiplication process on the total leakage current is discussed. A new empirical formula has been established to predict the optimal multiplication layer thickness of SAGCM APDs with dark current limited by generation-recombination at multiplication gain of 8.
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan, China. yanlizhao@mail.hust.edu.cn
authors.forename: Yanli
authors.initials: Y
authors.lastname: Zhao
authors.forename: Dongdong
authors.initials: D
authors.lastname: Zhang
authors.forename: Long
authors.initials: L
authors.lastname: Qin
authors.forename: Qi
authors.initials: Q
authors.lastname: Tang
authors.forename: Rui Hua
authors.initials: RH
authors.lastname: Wu
authors.forename: Jianjun
authors.initials: J
authors.lastname: Liu
authors.forename: Youping
authors.initials: Y
authors.lastname: Zhang
authors.forename: Hong
authors.initials: H
authors.lastname: Zhang
authors.forename: Xiuhua
authors.initials: X
authors.lastname: Yuan
authors.forename: Wen
authors.initials: W
authors.lastname: Liu
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D010720:Phosphines / Q000737:chemistry*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; C090882:indium phosphide