title: One-step selective chemistry for silicon-on-insulator sensor geometries.
abstract: A one-step functionalization process has been developed for oxide-free channels of field effect transistor structures, enabling a self-selective grafting of receptor molecules on the device active area, while protecting the nonactive part from nonspecific attachment of target molecules. Characterization of the self-organized chemical process is performed on both Si(100) and SiO(2) surfaces by infrared and X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. This selective functionalization leads to structures with better chemical stability, reproducibility, and reliability than current SiO(2)-based devices using silane molecules.
authors.affiliation: University of Texas at Dallas, Richardson, Texas, USA.
authors.forename: Oliver
authors.initials: O
authors.lastname: Seitz
authors.forename: Poornika G
authors.initials: PG
authors.lastname: Fernandes
authors.forename: Gazi A
authors.initials: GA
authors.lastname: Mahmud
authors.forename: Huang-Chun
authors.initials: HC
authors.lastname: Wen
authors.forename: Harvey J
authors.initials: HJ
authors.lastname: Stiegler
authors.forename: Richard A
authors.initials: RA
authors.lastname: Chapman
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel
authors.forename: Yves J
authors.initials: YJ
authors.lastname: Chabal
mesh_terms: D018625:Microscopy, Atomic Force; D012825:Silicon / Q000737:chemistry*; D017550:Spectroscopy, Fourier Transform Infrared; D013057:Spectrum Analysis / Q000379:methods; D014965:X-Rays
chemical_list: D012825:Silicon