title: Metallic behavior of cyclotron relaxation time in two-dimensional systems.
abstract: Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity ρ. The relaxation time τ(CR) shows a negative temperature dependence, which is similar to that of the transport scattering time τ(t) obtained from ρ. The ratio τ(CR)/τ(t) at 0.4 K increases as the electron density N(s) decreases, and exceeds unity when N(s) approaches the critical density for the metal-insulator transition.
authors.affiliation: Department of Physics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
authors.forename: Ryuichi
authors.initials: R
authors.lastname: Masutomi
authors.forename: Kohei
authors.initials: K
authors.lastname: Sasaki
authors.forename: Ippei
authors.initials: I
authors.lastname: Yasuda
authors.forename: Akihito
authors.initials: A
authors.lastname: Sekine
authors.forename: Kentarou
authors.initials: K
authors.lastname: Sawano
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Shiraki
authors.forename: Tohru
authors.initials: T
authors.lastname: Okamoto