title: Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask.
abstract: A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and ∼ 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al(2)O(3), high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I(d)-V(g)) curves were demonstrated and a field effect mobility up to ∼ 1200 cm(2) V(-1) s(-1) was achieved at V(d) = 10 mV.
authors.affiliation: School of Material Science and Engineering, Gwangju Institute of Science and Technology, Buk-gu, Gwangju, Korea.
authors.forename: Chang Goo
authors.initials: CG
authors.lastname: Kang
authors.forename: Jang Won
authors.initials: JW
authors.lastname: Kang
authors.forename: Sang Kyung
authors.initials: SK
authors.lastname: Lee
authors.forename: Seung Yong
authors.initials: SY
authors.lastname: Lee
authors.forename: Chun Hum
authors.initials: CH
authors.lastname: Cho
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Hwang
authors.forename: Young Gon
authors.initials: YG
authors.lastname: Lee
authors.forename: Jinseong
authors.initials: J
authors.lastname: Heo
authors.forename: Hyun-Jong
authors.initials: HJ
authors.lastname: Chung
authors.forename: Heejun
authors.initials: H
authors.lastname: Yang
authors.forename: Sunae
authors.initials: S
authors.lastname: Seo
authors.forename: Seong-Ju
authors.initials: SJ
authors.lastname: Park
authors.forename: Ki Young
authors.initials: KY
authors.lastname: Ko
authors.forename: Jinho
authors.initials: J
authors.lastname: Ahn
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee