title: In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.
authors.affiliation: Samsung Electronics Co, Gyeonggi, Korea.
authors.forename: Sang-Jun
authors.initials: SJ
authors.lastname: Choi
authors.forename: Gyeong-Su
authors.initials: GS
authors.lastname: Park
authors.forename: Ki-Hong
authors.initials: KH
authors.lastname: Kim
authors.forename: Soohaeng
authors.initials: S
authors.lastname: Cho
authors.forename: Woo-Young
authors.initials: WY
authors.lastname: Yang
authors.forename: Xiang-Shu
authors.initials: XS
authors.lastname: Li
authors.forename: Jung-Hwan
authors.initials: JH
authors.lastname: Moon
authors.forename: Kyung-Jin
authors.initials: KJ
authors.lastname: Lee
authors.forename: Kinam
authors.initials: K
authors.lastname: Kim
mesh_terms: D003300:Copper / Q000737:chemistry; D004560:Electricity; D004566:Electrodes; D004573:Electrolytes / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry
chemical_list: D004573:Electrolytes; D012822:Silicon Dioxide; D003300:Copper