title: Wafer-scale graphene integrated circuit.
abstract: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
authors.forename: Yu-Ming
authors.initials: YM
authors.lastname: Lin
authors.forename: Alberto
authors.initials: A
authors.lastname: Valdes-Garcia
authors.forename: Shu-Jen
authors.initials: SJ
authors.lastname: Han
authors.forename: Damon B
authors.initials: DB
authors.lastname: Farmer
authors.forename: Inanc
authors.initials: I
authors.lastname: Meric
authors.forename: Yanning
authors.initials: Y
authors.lastname: Sun
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Wu
authors.forename: Christos
authors.initials: C
authors.lastname: Dimitrakopoulos
authors.forename: Alfred
authors.initials: A
authors.lastname: Grill
authors.forename: Phaedon
authors.initials: P
authors.lastname: Avouris
authors.forename: Keith A
authors.initials: KA
authors.lastname: Jenkins