title: Photoinduced memory with hybrid integration of an organic fullerene derivative and an inorganic nanogap-embedded field-effect transistor for low-voltage operation.
authors.affiliation: Department of Electrical Engineering, KAIST, Yuseong-gu, Daejeon, Korea.
authors.forename: Chung-Jin
authors.initials: CJ
authors.lastname: Kim
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Choi
authors.forename: Sungho
authors.initials: S
authors.lastname: Kim
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Han
authors.forename: Hoyeon
authors.initials: H
authors.lastname: Kim
authors.forename: Seunghyup
authors.initials: S
authors.lastname: Yoo
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
mesh_terms: D004560:Electricity; D037741:Fullerenes / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: C539575:(6,6)-phenyl C61-butyric acid methyl ester; D037741:Fullerenes; D012825:Silicon