title: Flexible organic memory devices with multilayer graphene electrodes.
abstract: We fabricated 8 × 8 cross-bar array-type flexible organic resistive memory devices with transparent multilayer graphene (MLG) electrodes on a poly(ethylene terephthalate) substrate. The active layer of the memory devices is a composite of polyimide and 6-phenyl-C61 butyric acid methyl ester. The sheet resistance of the MLG film on memory device was found to be ∼270 Ω/◻, and the transmittance of separated MLG film from memory device was ∼92%. The memory devices showed typical write-once-read-many (WORM) characteristics and an ON/OFF ratio of over ∼10(6). The memory devices also exhibited outstanding cell-to-cell uniformity with flexibility. There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times. A retention time of over 10(4) s was observed without fluctuation under bending.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
authors.forename: Yongsung
authors.initials: Y
authors.lastname: Ji
authors.forename: Sangchul
authors.initials: S
authors.lastname: Lee
authors.forename: Byungjin
authors.initials: B
authors.lastname: Cho
authors.forename: Sunghoon
authors.initials: S
authors.lastname: Song
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
mesh_terms: D004553:Electric Conductivity; D055615:Electrical Equipment and Supplies; D004566:Electrodes; D006108:Graphite / Q000737:chemistry*; D009930:Organic Chemicals; D011092:Polyethylene Glycols / Q000737:chemistry; D011093:Polyethylene Terephthalates
chemical_list: D009930:Organic Chemicals; D011093:Polyethylene Terephthalates; D011092:Polyethylene Glycols; D006108:Graphite