title: Impact of valley polarization on the resistivity in two dimensions.
abstract: We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
authors.affiliation: Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom.
authors.forename: K
authors.initials: K
authors.lastname: Takashina
authors.forename: Y
authors.initials: Y
authors.lastname: Niida
authors.forename: V T
authors.initials: VT
authors.lastname: Renard
authors.forename: A
authors.initials: A
authors.lastname: Fujiwara
authors.forename: T
authors.initials: T
authors.lastname: Fujisawa
authors.forename: K
authors.initials: K
authors.lastname: Muraki
authors.forename: Y
authors.initials: Y
authors.lastname: Hirayama