title: Impact of disorder on the 5/2 fractional quantum Hall state.
abstract: We compare the energy gap of the ν = 5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.
authors.affiliation: Sandia National Labs, Albuquerque, New Mexico 87185, USA.
authors.forename: W
authors.initials: W
authors.lastname: Pan
authors.forename: N
authors.initials: N
authors.lastname: Masuhara
authors.forename: N S
authors.initials: NS
authors.lastname: Sullivan
authors.forename: K W
authors.initials: KW
authors.lastname: Baldwin
authors.forename: K W
authors.initials: KW
authors.lastname: West
authors.forename: L N
authors.initials: LN
authors.lastname: Pfeiffer
authors.forename: D C
authors.initials: DC
authors.lastname: Tsui