title: First-principles study of the electronic structures and dielectric properties of the Si/SiO(2) interface.
abstract: A first-principles study of the electronic structures and dielectric properties of Si/SiO(2) interfaces is implemented. Comparing the interfaces with and without defects, we explore the relationship between the defects and the dielectric properties, and also discuss the effect of the defects on the leakage current between the gate electrode and silicon substrate. We found that the electrons around the Fermi level percolate into the SiO(2) layers, which reduces the effective oxide thickness and is expected to enhance the leakage current. The dangling bonds largely affect the dielectric properties of the interface and the termination of dangling bonds by hydrogen atoms is successful in suppressing the increase of the dielectric constant.
authors.affiliation: Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan.
authors.forename: Tomoya
authors.initials: T
authors.lastname: Ono
authors.forename: Yoshiyuki
authors.initials: Y
authors.lastname: Egami
authors.forename: Katsuhiro
authors.initials: K
authors.lastname: Kutsuki
authors.forename: Heiji
authors.initials: H
authors.lastname: Watanabe
authors.forename: Kikuji
authors.initials: K
authors.lastname: Hirose