title: Origins of 1/f noise in nanostructure inclusion polymorphous silicon films.
abstract: In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. zmwu@uestc.edu.cn.
authors.forename: Shibin
authors.initials: S
authors.lastname: Li
authors.forename: Yadong
authors.initials: Y
authors.lastname: Jiang
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wu
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Ying
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wang
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Gregory
authors.initials: G
authors.lastname: Salamo