title: Characterization of silicon heterojunctions for solar cells.
abstract: Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
authors.affiliation: Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jean-paul.kleider@lgep.supelec.fr.
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Kleider
authors.forename: Jose
authors.initials: J
authors.lastname: Alvarez
authors.forename: Alexander Vitalievitch
authors.initials: AV
authors.lastname: Ankudinov
authors.forename: Alexander Sergeevitch
authors.initials: AS
authors.lastname: Gudovskikh
authors.forename: Ekaterina Vladimirovna
authors.initials: EV
authors.lastname: Gushchina
authors.forename: Martin
authors.initials: M
authors.lastname: Labrune
authors.forename: Olga Alexandrovna
authors.initials: OA
authors.lastname: Maslova
authors.forename: Wilfried
authors.initials: W
authors.lastname: Favre
authors.forename: Marie-Estelle
authors.initials: ME
authors.lastname: Gueunier-Farret
authors.forename: Pere
authors.initials: P
authors.lastname: Roca I Cabarrocas
authors.forename: Eugene Ivanovitch
authors.initials: EI
authors.lastname: Terukov