title: 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.
abstract: We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.
authors.affiliation: Department of Electronic and Electrical Engineering, University College London, London, UK.
authors.forename: Ting
authors.initials: T
authors.lastname: Wang
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu
authors.forename: Andrew
authors.initials: A
authors.lastname: Lee
authors.forename: Francesca
authors.initials: F
authors.lastname: Pozzi
authors.forename: Alwyn
authors.initials: A
authors.lastname: Seeds