title: Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells.
abstract: We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.
authors.affiliation: National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. Jo.Masafumi@nims.go.jp.
authors.forename: Masafumi
authors.initials: M
authors.lastname: Jo
authors.forename: Guotao
authors.initials: G
authors.lastname: Duan
authors.forename: Takaaki
authors.initials: T
authors.lastname: Mano
authors.forename: Kazuaki
authors.initials: K
authors.lastname: Sakoda