title: Enhanced silicon oxidation on titanium-covered Si(001).
abstract: We report on a core level photoemission study of the formation of an ultrathin SiO(x) layer grown at the interface of a titanium-covered Si(001) surface. Oxygen exposure at room temperature induces a large chemical shift of the Si 2p state, predominantly assigned to Si(4+). The results indicate that a SiO(2 - δ) layer, close to the stoichiometry of SiO(2), is formed below the TiO(x) film. The thickness of the SiO(2 - δ) layer is estimated to be ∼ 0.9 nm, corresponding to three to four oxide layers. Further chemical shift caused by annealing is attributed to the formation of titanium silicate (TiSi(x)O(y)).
authors.affiliation: Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan. sohno@ynu.ac.jp
authors.forename: S
authors.initials: S
authors.lastname: Ohno
authors.forename: K
authors.initials: K
authors.lastname: Shudo
authors.forename: F
authors.initials: F
authors.lastname: Nakayama
authors.forename: K
authors.initials: K
authors.lastname: Yamazaki
authors.forename: Y
authors.initials: Y
authors.lastname: Ichikawa
authors.forename: M
authors.initials: M
authors.lastname: Tanaka
authors.forename: T
authors.initials: T
authors.lastname: Okuda
authors.forename: A
authors.initials: A
authors.lastname: Harasawa
authors.forename: I
authors.initials: I
authors.lastname: Matsuda
authors.forename: A
authors.initials: A
authors.lastname: Kakizaki
mesh_terms: D003460:Crystallization; D008968:Molecular Conformation; D010084:Oxidation-Reduction; D010100:Oxygen / Q000737:chemistry*; D017640:Silicates / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties; D013696:Temperature; D014025:Titanium / Q000737:chemistry*
chemical_list: D017640:Silicates; C103828:titanium silicide; D012822:Silicon Dioxide; D014025:Titanium; D010100:Oxygen; D012825:Silicon