title: Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering.
abstract: In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
authors.affiliation: Physics Department, University of Minho, 4710-057 Braga, Portugal. sarapinto@fisica.uminho.pt.
authors.forename: Sara Rc
authors.initials: SR
authors.lastname: Pinto
authors.forename: Anabela G
authors.initials: AG
authors.lastname: Rolo
authors.forename: Maja
authors.initials: M
authors.lastname: Buljan
authors.forename: Adil
authors.initials: A
authors.lastname: Chahboun
authors.forename: Sigrid
authors.initials: S
authors.lastname: Bernstorff
authors.forename: Nuno P
authors.initials: NP
authors.lastname: Barradas
authors.forename: Eduardo
authors.initials: E
authors.lastname: Alves
authors.forename: Reza J
authors.initials: RJ
authors.lastname: Kashtiban
authors.forename: Ursel
authors.initials: U
authors.lastname: Bangert
authors.forename: Maria Jm
authors.initials: MJ
authors.lastname: Gomes