title: Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics.
abstract: In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
authors.affiliation: Dept, Eng, Electrònica, Edifici Q, Campus UAB, 08193 Bellaterra, Spain. mario.lanza@uab.cat.
authors.forename: Mario
authors.initials: M
authors.lastname: Lanza
authors.forename: Vanessa
authors.initials: V
authors.lastname: Iglesias
authors.forename: Marc
authors.initials: M
authors.lastname: Porti
authors.forename: Montse
authors.initials: M
authors.lastname: Nafria
authors.forename: Xavier
authors.initials: X
authors.lastname: Aymerich