title: Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission.
abstract: The conditions for THz radiation generation caused by electron transit-time resonance in momentum and real spaces under optical phonon emission are analyzed for nitride-based materials and their structures. It is shown that such a mechanism provides a unique possibility to realize sub-THz and THz radiation generation at the border between the electro-optical and electronic techniques by using two alternative approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current-field instabilities in sub-micron and micron n(+)nn(+) diodes. Estimations of frequency regions, output power and efficiency of the generation demonstrate that nitrides are promising materials for THz radiation generation.
authors.affiliation: Semiconductor Physics Institute, A Goštauto 11, 01108 Vilnius, Lithuania.
authors.forename: E
authors.initials: E
authors.lastname: Starikov
authors.forename: P
authors.initials: P
authors.lastname: Shiktorov
authors.forename: V
authors.initials: V
authors.lastname: Gružinskis
authors.forename: L
authors.initials: L
authors.lastname: Varani
authors.forename: C
authors.initials: C
authors.lastname: Palermo
authors.forename: J-F
authors.initials: JF
authors.lastname: Millithaler
authors.forename: L
authors.initials: L
authors.lastname: Reggiani