title: Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells.
abstract: Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P,O, Box 603, Beijing 100190, PR China. blliu@iphy.ac.cn.
authors.forename: Changcheng
authors.initials: C
authors.lastname: Hu
authors.forename: Huiqi
authors.initials: H
authors.lastname: Ye
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.forename: Haitao
authors.initials: H
authors.lastname: Tian
authors.forename: Wenxin
authors.initials: W
authors.lastname: Wang
authors.forename: Wenquan
authors.initials: W
authors.lastname: Wang
authors.forename: Baoli
authors.initials: B
authors.lastname: Liu
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie