title: Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2).
abstract: Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO(2)-silicon and Gd(2)O(3)-silicon heterojunctions are demonstrated.
authors.affiliation: Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111, USA. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA 70806, USA.
authors.forename: Ya B
authors.initials: YB
authors.lastname: Losovyj
authors.forename: David
authors.initials: D
authors.lastname: Wooten
authors.forename: Juan Colon
authors.initials: JC
authors.lastname: Santana
authors.forename: Joonhee Michael
authors.initials: JM
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authors.lastname: Belashchenko
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authors.initials: N
authors.lastname: Lozova
authors.forename: J
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authors.lastname: Petrosky
authors.forename: A
authors.initials: A
authors.lastname: Sokolov
authors.forename: Jinke
authors.initials: J
authors.lastname: Tang
authors.forename: Wendong
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authors.lastname: Wang
authors.forename: Navamoney
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authors.lastname: Arulsamy
authors.forename: P A
authors.initials: PA
authors.lastname: Dowben