title: Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.
abstract: X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
authors.affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.
authors.forename: Caihong
authors.initials: C
authors.lastname: Jia
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
authors.forename: Yan
authors.initials: Y
authors.lastname: Guo
authors.forename: Xianglin
authors.initials: X
authors.lastname: Liu
authors.forename: Shaoyan
authors.initials: S
authors.lastname: Yang
authors.forename: Weifeng
authors.initials: W
authors.lastname: Zhang
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang