title: Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.
abstract: The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P,O, Box 912, Beijing 100083, People's Republic of China. lizhiwei@semi.ac.cn.
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Li
authors.forename: Biao
authors.initials: B
authors.lastname: Zhang
authors.forename: Jun
authors.initials: J
authors.lastname: Wang
authors.forename: Jianming
authors.initials: J
authors.lastname: Liu
authors.forename: Xianglin
authors.initials: X
authors.lastname: Liu
authors.forename: Shaoyan
authors.initials: S
authors.lastname: Yang
authors.forename: Qinsheng
authors.initials: Q
authors.lastname: Zhu
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang