title: Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition.
abstract: The Al compositional distribution of AlGaN is investigated by cathodoluminescence (CL). Monochromatic CL images and CL spectra reveal a lateral Al compositional inhomogeneity, which corresponds to surface hexagonal patterns. Cross-sectional CL images show a relatively uniform Al compositional distribution in the growth direction, indicating columnar growth mode of AlGaN films. In addition, a thin AlGaN layer with lower Al composition is grown on top of the buffer AlN layer near the bottom of the AlGaN epilayer because of the larger lateral mobility of Ga adatoms on the growth surface and their accumulation at the grain boundaries.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
authors.forename: X L
authors.initials: XL
authors.lastname: Wang
authors.forename: D G
authors.initials: DG
authors.lastname: Zhao
authors.forename: D S
authors.initials: DS
authors.lastname: Jiang
authors.forename: H
authors.initials: H
authors.lastname: Yang
authors.forename: J W
authors.initials: JW
authors.lastname: Liang
authors.forename: U
authors.initials: U
authors.lastname: Jahn
authors.forename: K
authors.initials: K
authors.lastname: Ploog