title: Atomic scale investigation of silicon nanowires and nanoclusters.
abstract: In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.
authors.affiliation: Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av, de l'université, BP 12, 76801 Saint Etienne du Rouvray, France. manuel.roussel@etu.univ-rouen.fr.
authors.forename: Manuel
authors.initials: M
authors.lastname: Roussel
authors.forename: Wanghua
authors.initials: W
authors.lastname: Chen
authors.forename: Etienne
authors.initials: E
authors.lastname: Talbot
authors.forename: Rodrigue
authors.initials: R
authors.lastname: Lardé
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Cadel
authors.forename: Fabrice
authors.initials: F
authors.lastname: Gourbilleau
authors.forename: Bruno
authors.initials: B
authors.lastname: Grandidier
authors.forename: Didier
authors.initials: D
authors.lastname: Stiévenard
authors.forename: Philippe
authors.initials: P
authors.lastname: Pareige