title: Silicon nano-well arrays for reliable pattern transfer and locally confined high temperature reactions.
abstract: Si nano-well arrays, with precisely controlled undercut Si sidewall profiles and flat bottomed pockets, enable uniform nanoscale pattern transfer from resists to metal deposits without degradation of the initial lithographic resolution, as verified by the formation of arrays of Au nano-dots with 10 nm diameter. An additional functionality of the Si nano-wells as local nano-reactors, where the patterned material is enclosed in a Si pocket during high temperature reaction, is demonstrated by thermally inducing a phase transformation of the as-deposited A1 phase of FePt nano-dots to the high coercivity, chemically ordered L1(0) phase.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.
authors.forename: Jung-Sub
authors.initials: JS
authors.lastname: Wi
authors.forename: Robert J
authors.initials: RJ
authors.lastname: Wilson
authors.forename: Donkoun
authors.initials: D
authors.lastname: Lee
authors.forename: Robert M
authors.initials: RM
authors.lastname: White
authors.forename: Shan X
authors.initials: SX
authors.lastname: Wang
mesh_terms: D006358:Hot Temperature; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D019904:Polymethyl Methacrylate; D012825:Silicon
chemical_list: D019904:Polymethyl Methacrylate; D012825:Silicon