title: Defect-mediated resonance shift of silicon-on-insulator racetrack resonators.
abstract: We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.
authors.affiliation: Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7, Canada. ackertjj@mcmaster.ca
authors.forename: J J
authors.initials: JJ
authors.lastname: Ackert
authors.forename: J K
authors.initials: JK
authors.lastname: Doylend
authors.forename: D F
authors.initials: DF
authors.lastname: Logan
authors.forename: P E
authors.initials: PE
authors.lastname: Jessop
authors.forename: R
authors.initials: R
authors.lastname: Vafaei
authors.forename: L
authors.initials: L
authors.lastname: Chrostowski
authors.forename: A P
authors.initials: AP
authors.lastname: Knights
mesh_terms: D004867:Equipment Design; D007477:Ions / Q000737:chemistry; D008962:Models, Theoretical; D055095:Optics and Photonics / Q000295:instrumentation* / Q000379:methods*; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D007477:Ions; D012825:Silicon