title: Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes.
abstract: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany. s.harazim@ifw-dresden.de.
authors.forename: Stefan M
authors.initials: SM
authors.lastname: Harazim
authors.forename: Ping
authors.initials: P
authors.lastname: Feng
authors.forename: Samuel
authors.initials: S
authors.lastname: Sanchez
authors.forename: Christoph
authors.initials: C
authors.lastname: Deneke
authors.forename: Yongfeng
authors.initials: Y
authors.lastname: Mei
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt