title: Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.
abstract: Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.
authors.affiliation: Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. jouault@ges.univ-montp2.fr.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Camara
authors.forename: Benoit
authors.initials: B
authors.lastname: Jouault
authors.forename: Bilal
authors.initials: B
authors.lastname: Jabakhanji
authors.forename: Alessandra
authors.initials: A
authors.lastname: Caboni
authors.forename: Antoine
authors.initials: A
authors.lastname: Tiberj
authors.forename: Christophe
authors.initials: C
authors.lastname: Consejo
authors.forename: Philipe
authors.initials: P
authors.lastname: Godignon
authors.forename: Jean
authors.initials: J
authors.lastname: Camassel