title: Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.
abstract: Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.
authors.affiliation: Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Luis E Erro # 1, Santa María Tonantzintla, CP 72840, Puebla, Puebla, Mexico. Universidad Popular Autónoma del Estado de Puebla (UPAEP), 21 Sur 1103 Colonia Santiago, CP 72160, Puebla, Puebla, Mexico.
authors.forename: Arllene M
authors.initials: AM
authors.lastname: Pérez
authors.forename: Francisco J
authors.initials: FJ
authors.lastname: Renero
authors.forename: Carlos
authors.initials: C
authors.lastname: Zúñiga
authors.forename: Alfonso
authors.initials: A
authors.lastname: Torres
authors.forename: César
authors.initials: C
authors.lastname: Santiago