title: Macro- and micro-strain in GaN nanowires on Si(111).
abstract: We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from ± (0.015)% to ± (0.03)%. This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra.
authors.affiliation: Paul-Drude-Institut fuer Festkoerperelektronik, Berlin, Germany. bernd.jenichen@pdi-berlin.de
authors.forename: B
authors.initials: B
authors.lastname: Jenichen
authors.forename: O
authors.initials: O
authors.lastname: Brandt
authors.forename: C
authors.initials: C
authors.lastname: Pfüller
authors.forename: P
authors.initials: P
authors.lastname: Dogan
authors.forename: M
authors.initials: M
authors.lastname: Knelangen
authors.forename: A
authors.initials: A
authors.lastname: Trampert