title: Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers.
abstract: Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.
authors.affiliation: CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy. frigeri@imem.cnr.it.
authors.forename: Cesare
authors.initials: C
authors.lastname: Frigeri
authors.forename: Miklós
authors.initials: M
authors.lastname: Serényi
authors.forename: Nguyen Quoc
authors.initials: NQ
authors.lastname: Khánh
authors.forename: Attila
authors.initials: A
authors.lastname: Csik
authors.forename: Ferenc
authors.initials: F
authors.lastname: Riesz
authors.forename: Zoltán
authors.initials: Z
authors.lastname: Erdélyi
authors.forename: Lucia
authors.initials: L
authors.lastname: Nasi
authors.forename: Dezső László
authors.initials: DL
authors.lastname: Beke
authors.forename: Hans-Gerd
authors.initials: HG
authors.lastname: Boyen