title: Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes.
abstract: In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by inductively coupled plasma. We demonstrate that the reflection characteristic of the fabricated photodiodes has significantly reduced by 55% compared with the reference devices. As a result, the optical response Iillumination/Idark of the 4H-SiC photodiodes were enhanced up to 178%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.
authors.affiliation: School of Electronics and Information, Kwangwoon University, Seoul 139-701, Korea. smkoo@kw.ac.kr.
authors.forename: Min-Seok
authors.initials: MS
authors.lastname: Kang
authors.forename: Sung-Jae
authors.initials: SJ
authors.lastname: Joo
authors.forename: Wook
authors.initials: W
authors.lastname: Bahng
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Lee
authors.forename: Nam-Kyun
authors.initials: NK
authors.lastname: Kim
authors.forename: Sang-Mo
authors.initials: SM
authors.lastname: Koo