title: Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction.
abstract: Vertical Si nano-rings with a uniform thickness of about 100 nm have been fabricated by conventional optical photolithography with a low cost based on Poisson diffraction. Moreover, the roughness of the Si nano-rings can be effectively reduced by sacrificial oxidation. In order to increase the density of the nano-rings, coaxial twin Si nano-rings have been fabricated by the Poisson diffraction method combined with the spacer technique. The thickness of both the inner and outer Si nano-rings is about 60 nm, and the gap between the twin nano-rings is about 100 nm.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, People's Republic of China.
authors.forename: Yujie
authors.initials: Y
authors.lastname: Ai
authors.forename: Ru
authors.initials: R
authors.lastname: Huang
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Hao
authors.forename: Runsheng
authors.initials: R
authors.lastname: Wang
authors.forename: Changze
authors.initials: C
authors.lastname: Liu
authors.forename: Chunhui
authors.initials: C
authors.lastname: Fan
authors.forename: Yangyuan
authors.initials: Y
authors.lastname: Wang