title: High contrast 40Gbit/s optical modulation in silicon.
abstract: Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
authors.affiliation: Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK. d.thomson@surrey.ac.uk
authors.forename: D J
authors.initials: DJ
authors.lastname: Thomson
authors.forename: F Y
authors.initials: FY
authors.lastname: Gardes
authors.forename: Y
authors.initials: Y
authors.lastname: Hu
authors.forename: G
authors.initials: G
authors.lastname: Mashanovich
authors.forename: M
authors.initials: M
authors.lastname: Fournier
authors.forename: P
authors.initials: P
authors.lastname: Grosse
authors.forename: J-M
authors.initials: JM
authors.lastname: Fedeli
authors.forename: G T
authors.initials: GT
authors.lastname: Reed