title: Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition.
abstract: Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.
authors.affiliation: Institute of Photonic Technology, Jena, Germany. bjoern.eisenhawer@ipht-jena.de
authors.forename: Björn
authors.initials: B
authors.lastname: Eisenhawer
authors.forename: Vladimir
authors.initials: V
authors.lastname: Sivakov
authors.forename: Andreas
authors.initials: A
authors.lastname: Berger
authors.forename: Silke
authors.initials: S
authors.lastname: Christiansen