title: Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes.
abstract: We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.
authors.affiliation: Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Ham
authors.forename: Sukho
authors.initials: S
authors.lastname: Yoon
authors.forename: Yongjo
authors.initials: Y
authors.lastname: Park
authors.forename: Lifeng
authors.initials: L
authors.lastname: Bian
authors.forename: Manfred
authors.initials: M
authors.lastname: Ramsteiner
authors.forename: Jae-Min
authors.initials: JM
authors.lastname: Myoung