title: Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells.
abstract: Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.
authors.affiliation: School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester, UK. hkhalia@essex.ac.uk.
authors.forename: Hagir Mohammed
authors.initials: HM
authors.lastname: Khalil
authors.forename: Yun
authors.initials: Y
authors.lastname: Sun
authors.forename: Naci
authors.initials: N
authors.lastname: Balkan
authors.forename: Andreas
authors.initials: A
authors.lastname: Amann
authors.forename: Markku
authors.initials: M
authors.lastname: Sopanen