title: Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.
abstract: Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.
authors.affiliation: Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA. gul308@lehigh.edu.
authors.forename: Guangyu
authors.initials: G
authors.lastname: Liu
authors.forename: Hongping
authors.initials: H
authors.lastname: Zhao
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.forename: Joo Hyung
authors.initials: JH
authors.lastname: Park
authors.forename: Luke J
authors.initials: LJ
authors.lastname: Mawst
authors.forename: Nelson
authors.initials: N
authors.lastname: Tansu