title: Hf-based high-k materials for Si nanocrystal floating gate memories.
abstract: Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.
authors.affiliation: CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN 6252, Ensicaen, 6 Bd Mal Juin, 14050 Caen Cedex 4, France. larysa.khomenkova@ensicaen.fr.
authors.forename: Larysa
authors.initials: L
authors.lastname: Khomenkova
authors.forename: Bhabani S
authors.initials: BS
authors.lastname: Sahu
authors.forename: Abdelilah
authors.initials: A
authors.lastname: Slaoui
authors.forename: Fabrice
authors.initials: F
authors.lastname: Gourbilleau