title: Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs.
abstract: Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors.
authors.affiliation: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.
authors.forename: Jin
authors.initials: J
authors.lastname: Hou
authors.forename: D S
authors.initials: DS
authors.lastname: Citrin
authors.forename: Huaming
authors.initials: H
authors.lastname: Wu
authors.forename: Dingshan
authors.initials: D
authors.lastname: Gao
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Zhou