title: Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications.
abstract: Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed based on the single CdS : Ga NW with high-κ Si(3)N(4) dielectrics and top-gate geometries. In contrast to back-gate FETs, the MISFETs revealed a substantial improvement in device performance. Nano-light emitting diodes (nanoLEDs) were fabricated from the CdS : Ga NWs by using a n-NW/p(+)-Si substrate hybrid device structure. The nanoLEDs showed a bright yellow emission at a low forward bias. It is expected that the Ga-doped CdS NWs with controlled electrical transport properties will have important applications in nano-optoelectronic devices.
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Jiajun
authors.initials: J
authors.lastname: Cai
authors.forename: Jiansheng
authors.initials: J
authors.lastname: Jie
authors.forename: Peng
authors.initials: P
authors.lastname: Jiang
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.forename: Chao
authors.initials: C
authors.lastname: Xie
authors.forename: Chunyan
authors.initials: C
authors.lastname: Wu
authors.forename: Zhi
authors.initials: Z
authors.lastname: Wang
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Yu
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: Xiwei
authors.initials: X
authors.lastname: Zhang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Peng
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang