title: Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing.
abstract: We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains approximately 18% improvement in the modulation bandwidth from the annealed QD lasers. In addition, the modulation efficiency of the annealed QD lasers improves by approximately 45% as compared to the as-grown ones. The observed improvements are due to (1) the removal of defects which act as nonradiative recombination centers in the QD structure and (2) the reduction in the Auger-related recombination processes upon annealing.
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. zhao0097@e.ntu.edu.sg.
authors.forename: Hanxue
authors.initials: H
authors.lastname: Zhao
authors.forename: Soon Fatt
authors.initials: SF
authors.lastname: Yoon
authors.forename: Chun Yong
authors.initials: CY
authors.lastname: Ngo
authors.forename: Rui
authors.initials: R
authors.lastname: Wang