title: Transport spectroscopy of single Pt impurities in silicon using Schottky barrier MOSFETs.
abstract: We investigate low temperature electron transport in silicon Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFETs), which consist of PtSi metallic source/drain electrodes. Measurements are made on approximately 23 inversion layers and resonances attributed to single impurities close to the metal/semiconductor interface are observed. We ascribe these impurities to Pt atoms that have diffused into the semiconductor channel from the contacts.
authors.affiliation: Institut d'Electronique Fondamentale-CNRS UMR 8622, Université Paris-Sud, 91405 Orsay, France.
authors.forename: L E
authors.initials: LE
authors.lastname: Calvet
authors.forename: W
authors.initials: W
authors.lastname: Wernsdorfer
authors.forename: J P
authors.initials: JP
authors.lastname: Snyder
authors.forename: M A
authors.initials: MA
authors.lastname: Reed