title: Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.
abstract: We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.
authors.affiliation: Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Strobel
authors.forename: Rocío Murcia
authors.initials: RM
authors.lastname: Hernández
authors.forename: Allan G
authors.initials: AG
authors.lastname: Hansen
authors.forename: Marc
authors.initials: M
authors.lastname: Tornow