title: Piezotronic nanowire-based resistive switches as programmable electromechanical memories.
abstract: We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.
authors.affiliation: School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States.
authors.forename: Wenzhuo
authors.initials: W
authors.lastname: Wu
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D010100:Oxygen; D015034:Zinc Oxide