title: Observation of oscillatory resistance behavior in coupled Bernal and rhombohedral stacking graphene.
abstract: We report on the first observation of an anomalous temperature-dependent resistance behavior in coupled Bernal and rhombohedral stacking graphene. At low-temperature regime (<50 K) the temperature-dependent resistance exhibits a drop while at high-temperature regions (>250 K), the resistance increases. In the transition region (50-250 K) an oscillatory resistance behavior was observed. This property is not present in any layered graphene structures other than five-layer. We propose that the temperature-dependent resistance behavior is governed by the interplay of the Coulomb and short-range scatterings. The origin of the oscillatory resistance behavior is the ABCAB and ABABA stacking configurations, which induces tunable bandgap in the five-layer graphene. The obtained results also indicate that a perpendicular magnetic field opens an excitonic gap because of the Coulomb interaction-driven electronic instabilities, and the bandgap of the five-layer graphene is thermally activated. Potentially, the observed phenomenon provides important transport information to the design of few-layer graphene transistors that can be manipulated by a magnetic field.
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore.
authors.forename: Yanping
authors.initials: Y
authors.lastname: Liu
authors.forename: Wen Siang
authors.initials: WS
authors.lastname: Lew
authors.forename: Sarjoosing
authors.initials: S
authors.lastname: Goolaup
authors.forename: Hwi Fen
authors.initials: HF
authors.lastname: Liew
authors.forename: Seng Kai
authors.initials: SK
authors.lastname: Wong
authors.forename: Tiejun
authors.initials: T
authors.lastname: Zhou