title: Tunable capacitors employing BZN/BST thin films for RF applications.
abstract: Tunable parallel-plate capacitors employing Bi(1.5)Zn(1.0)Nb(1.5)O(7)/Ba(0.5)Sr(0.5)TiO(3) (BZN/BST) thin films for RF applications are reported. The intermediate frequency measurements indicate that the BZN/BST-based varactors demonstrate large tunability of 39% at 40 V and high device quality factor of 300 at 1 MHz. The devices maintain quite low leakage current density even under a high applied bias. The quality factor analysis shows that the device quality factor is highly dependent on conductor loss of electrodes at frequencies above 1 MHz. The phase shifter employing BZN/BST-based varactors exhibits lower insertion loss than does employing semiconductor diodes at a designed frequency of 445 MHz, demonstrating the potential of tunable capacitors employing BZN/BST thin films for RF applications.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China.
authors.forename: Ruguan
authors.initials: R
authors.lastname: Li
authors.forename: Shuwen
authors.initials: S
authors.lastname: Jiang
authors.forename: Libin
authors.initials: L
authors.lastname: Gao
authors.forename: Luyu
authors.initials: L
authors.lastname: Wang
authors.forename: Yanrong
authors.initials: Y
authors.lastname: Li