title: On the hot and cold autosolitons in dissipative semiconductor structures.
abstract: It is experimentally shown that in bulk InSb and Te single crystals, during the formation and excitation of the dissipative structure in the non-equilibrium electron-hole plasma, in the case of a presence of longitudinal autosolitons, the carrier concentration decreases outside the autosolitons, while it increases in the case of transverse autosolitons. The longitudinal autosolitons, forming in the non-equilibrium electron-hole plasma by Joule heating, are considered to be cold, and the transverse autosolitons to be hot.
authors.affiliation: Institute of Physics of Daghestan Science Center, Russian Academy Science, M Yaragskogo street, 94, Makhachkala, 367003, Russia.
authors.forename: I K
authors.initials: IK
authors.lastname: Kamilov
authors.forename: A A
authors.initials: AA
authors.lastname: Stepurenko
authors.forename: A S
authors.initials: AS
authors.lastname: Kovalev