title: Effect of the surface polarizability on electrostatic screening in semiconductors.
abstract: Following the Gibbs approach a general electrostatic model of heterogeneous systems with non-homogeneous interfaces is proposed. The intrinsic surface polarization is taken into account through the introduction of a surface dielectric constant and the electrostatic boundary conditions are generalized as two-dimensional Poisson equations. This model is applied to analysis of the electrostatic potential of charged defects on a semiconductor surface. As a result, a good theoretical fit of the experimental data is obtained. The fitting value of the surface dielectric constant is in good agreement with its theoretical estimation in the framework of the Gibbs approach.
authors.affiliation: Faculty of Chemistry, University of Sofia, 1 James Bourchier Boulevard, 1126 Sofia, Bulgaria.
authors.forename: Radomir
authors.initials: R
authors.lastname: Slavchov
authors.forename: Tzanko
authors.initials: T
authors.lastname: Ivanov
authors.forename: Boryan
authors.initials: B
authors.lastname: Radoev