title: Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.
abstract: We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.
authors.affiliation: Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany. ralf.schuber@kit.edu.
authors.forename: Cheng-Hung
authors.initials: CH
authors.lastname: Shih
authors.forename: Teng-Hsing
authors.initials: TH
authors.lastname: Huang
authors.forename: Ralf
authors.initials: R
authors.lastname: Schuber
authors.forename: Yen-Liang
authors.initials: YL
authors.lastname: Chen
authors.forename: Liuwen
authors.initials: L
authors.lastname: Chang
authors.forename: Ikai
authors.initials: I
authors.lastname: Lo
authors.forename: Mitch Mc
authors.initials: MM
authors.lastname: Chou
authors.forename: Daniel M
authors.initials: DM
authors.lastname: Schaadt