title: Atomic structure of misfit dislocations at InAs/GaAs(110).
abstract: Heteroepitaxy of InAs on GaAs(110) leads to the formation of subsurface misfit dislocations to relieve strain. These dislocations have been observed both with transmission electron microscopy (TEM) and scanning tunnelling microscopy (STM), and show regular spacing. Electronic structure calculations of the structure of the core of the dislocations, as well as their location within the epitaxial layer, are presented. The most stable location is found to be at the interface, with the core centred over In. Calculated strain profiles and the thickness at which dislocations should form are in good agreement with available experimental data.
authors.affiliation: Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UK.
authors.forename: R
authors.initials: R
authors.lastname: Choudhury
authors.forename: D R
authors.initials: DR
authors.lastname: Bowler
authors.forename: M J
authors.initials: MJ
authors.lastname: Gillan