title: Electromodulated reflectance study of self-assembled Ge/Si quantum dots.
abstract: We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.
authors.affiliation: Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia. yakimov@isp.nsc.ru.
authors.forename: Andrew
authors.initials: A
authors.lastname: Yakimov
authors.forename: Aleksandr
authors.initials: A
authors.lastname: Nikiforov
authors.forename: Aleksei
authors.initials: A
authors.lastname: Bloshkin
authors.forename: Anatolii
authors.initials: A
authors.lastname: Dvurechenskii