title: Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.
abstract: We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.
authors.affiliation: Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City, Taiwan.
authors.forename: Jiun-Ting
authors.initials: JT
authors.lastname: Chen
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Chi-Heng
authors.initials: CH
authors.lastname: Chen
authors.forename: Ya-Yu
authors.initials: YY
authors.lastname: Yang
authors.forename: Jinn-Kong
authors.initials: JK
authors.lastname: Sheu
authors.forename: Li-Wen
authors.initials: LW
authors.lastname: Lai