title: Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.
abstract: In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.
authors.affiliation: DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany. daniel.schaadt@kit.edu.
authors.forename: Mathieu
authors.initials: M
authors.lastname: Helfrich
authors.forename: Roland
authors.initials: R
authors.lastname: Gröger
authors.forename: Alexander
authors.initials: A
authors.lastname: Förste
authors.forename: Dimitri
authors.initials: D
authors.lastname: Litvinov
authors.forename: Dagmar
authors.initials: D
authors.lastname: Gerthsen
authors.forename: Thomas
authors.initials: T
authors.lastname: Schimmel
authors.forename: Daniel M
authors.initials: DM
authors.lastname: Schaadt