title: Coherent magnetic semiconductor nanodot arrays.
abstract: In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.
authors.affiliation: Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia. y.wang4@uq.edu.au.
authors.forename: Yong
authors.initials: Y
authors.lastname: Wang
authors.forename: Faxian
authors.initials: F
authors.lastname: Xiu
authors.forename: Ya
authors.initials: Y
authors.lastname: Wang
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Ward P
authors.initials: WP
authors.lastname: Beyermann
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhou
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang