title: Effect of oxygen content on the transport properties of LaTiO(3+β/2) thin films.
abstract: The structural and transport properties of LaTiO(3+β/2) epitaxial thin films, grown at different oxygen pressures ranging from 6.6 × 10(-4) to 5 Pa, have been investigated. X-ray diffraction peaks of the films shift to lower angles with increasing oxygen pressure, indicative of a variation of the corresponding lattice spacing. All the films show T(2) dependence of resistivity over a large temperature range of ∼200 K, suggesting a band-filling-induced metallic Fermi-liquid behaviour. Upturns in resistivity have been revealed at low temperatures, which could be ascribed to the Anderson-localization effect caused by the cation vacancies. Furthermore, for the thin films grown at high oxygen pressures of 0.5 and 5 Pa, the dependence of resistivity on temperature shows a maximum at high temperatures. The maximum seems to support the argument that transition between t-orbital ordering and disordering plays an important role in dominating transport properties at high temperatures. Carrier density deduced from Hall coefficient increases with the decrease of oxygen content, and shows strong temperature dependence. From the experimental data, it can be asserted that in the LaTiO(3+β/2) thin films, besides the band filling effect, localization or disorder caused by La and Ti vacancy effects controls the unique transport properties.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China. Department of Materials Science, Sichuan University, Chengdu 610064, People's Republic of China.
authors.forename: F B
authors.initials: FB
authors.lastname: Wang
authors.forename: J
authors.initials: J
authors.lastname: Li
authors.forename: P
authors.initials: P
authors.lastname: Wang
authors.forename: X H
authors.initials: XH
authors.lastname: Zhu
authors.forename: M J
authors.initials: MJ
authors.lastname: Zhang
authors.forename: Z H
authors.initials: ZH
authors.lastname: Peng
authors.forename: S L
authors.initials: SL
authors.lastname: Li
authors.forename: L P
authors.initials: LP
authors.lastname: Yong
authors.forename: Y F
authors.initials: YF
authors.lastname: Chen
authors.forename: X S
authors.initials: XS
authors.lastname: Sun
authors.forename: D N
authors.initials: DN
authors.lastname: Zheng