title: Graphene magnetoresistance device in van der Pauw geometry.
abstract: We have fabricated extraordinary magnetoresistance (EMR) device, comprising a monolayer graphene with an embedded metallic disk, that exhibits large room temperature magnetoresistance (MR) enhancement of up to 55,000% at 9 T. Finite element simulations yield predictions in excellent agreement with the experiment and show possibility for even better performance. Simplicity, ease of implementation and high sensitivity of this device imply great potential for practical applications.
authors.affiliation: Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
authors.forename: Jianming
authors.initials: J
authors.lastname: Lu
authors.forename: Haijing
authors.initials: H
authors.lastname: Zhang
authors.forename: Wu
authors.initials: W
authors.lastname: Shi
authors.forename: Zhe
authors.initials: Z
authors.lastname: Wang
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zheng
authors.forename: Ting
authors.initials: T
authors.lastname: Zhang
authors.forename: Ning
authors.initials: N
authors.lastname: Wang
authors.forename: Zikang
authors.initials: Z
authors.lastname: Tang
authors.forename: Ping
authors.initials: P
authors.lastname: Sheng
mesh_terms: D004553:Electric Conductivity; D004560:Electricity; D006108:Graphite / Q000737:chemistry*; D008280:Magnetics; D036103:Nanotechnology; D010316:Particle Size; D013499:Surface Properties; D013696:Temperature
chemical_list: D006108:Graphite