title: Interfacial electronic traps at ZnSe/GaAs heterostructures studied by photomodulation Raman scattering.
abstract: Photomodulation Raman scattering spectroscopy has been employed to study free charge trapping mechanisms at ZnSe-GaAs(001) heterostructure interfaces. This technique reveals that the interfacial region contains predominantly hole traps. Time dependent measurements of the photomodulated Raman scattering intensity show that interfacial charge-trap lifetime is ≈30 s for both electrons and holes.
authors.affiliation: Physics Department, Faculty of Science, Ain Shams University, Cairo, Egypt.
authors.forename: T A
authors.initials: TA
authors.lastname: El-Brolossy
authors.forename: S
authors.initials: S
authors.lastname: Abdalla
authors.forename: S
authors.initials: S
authors.lastname: Negm
authors.forename: H
authors.initials: H
authors.lastname: Talaat