title: Epitaxial growth of crystalline polyaniline on reduced graphene oxide.
abstract: Due to its unique electronic properties, graphene has already been identified as a promising material for future carbon based electronics. To develop graphene technology, the fabrication of a high quality P-N junction is a great challenge. Here, we describe a general technique to grow single crystalline polyaniline (PANI) films on graphene sheets using in situ polymerization via the oxidation-reduction of aniline monomer and graphene oxide, respectively, to fabricate a high quality P-N junction, which shows diode-like behavior with a remarkably low turn-on voltage (60 mV) and high rectification ratio (1880:1) up to a voltage of 0.2 V. The origin of these superior electronic properties is the preferential growth of a highly crystalline PANI film as well as lattice matching between the d-values [∼2.48 Å] of graphene and {120} planes of PANI.
authors.affiliation: Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
authors.forename: Dipanwita
authors.initials: D
authors.lastname: Majumdar
authors.forename: Moni
authors.initials: M
authors.lastname: Baskey
authors.forename: Shyamal K
authors.initials: SK
authors.lastname: Saha
mesh_terms: D000814:Aniline Compounds / Q000737:chemistry*; D003460:Crystallization; D006108:Graphite / Q000737:chemistry*; D053761:Nanocomposites / Q000737:chemistry*; D010084:Oxidation-Reduction; D010087:Oxides / Q000737:chemistry*
chemical_list: D000814:Aniline Compounds; D010087:Oxides; C416807:polyaniline; D006108:Graphite