title: A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.
abstract: : Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Handan Str, 220, Shanghai 200433, China. zhenyangz@fudan.edu.cn.
authors.forename: Zhenyang
authors.initials: Z
authors.lastname: Zhong
authors.forename: Hua
authors.initials: H
authors.lastname: Gong
authors.forename: Yingjie
authors.initials: Y
authors.lastname: Ma
authors.forename: Yongliang
authors.initials: Y
authors.lastname: Fan
authors.forename: Zuimin
authors.initials: Z
authors.lastname: Jiang