title: Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes.
abstract: Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz.
authors.affiliation: Semiconductor Physics Institute, A Goshtauto 11, Vilnius 01108, Lithuania.
authors.forename: A
authors.initials: A
authors.lastname: Reklaitis