title: Applying computational nanomaterials design to the reactive ion etching of NiO thin films-a preliminary investigation.
abstract: We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g. NH(3), CH(4)). We strongly suggest the use of CH(4) or any H-based gas source other than CHF(3) to enhance RIE process.
authors.affiliation: Graduate School of Engineering, Osaka University, Suita 565-0871, Japan.
authors.forename: M
authors.initials: M
authors.lastname: David
authors.forename: R
authors.initials: R
authors.lastname: Muhida
authors.forename: T
authors.initials: T
authors.lastname: Roman
authors.forename: S
authors.initials: S
authors.lastname: Kunikata
authors.forename: W A
authors.initials: WA
authors.lastname: Diño
authors.forename: H
authors.initials: H
authors.lastname: Nakanishi
authors.forename: H
authors.initials: H
authors.lastname: Kasai
authors.forename: F
authors.initials: F
authors.lastname: Takano
authors.forename: H
authors.initials: H
authors.lastname: Shima
authors.forename: H
authors.initials: H
authors.lastname: Akinaga