title: Evaluation of photoelectric processes in photorefractive crystals via the exposure characteristics of light diffraction.
abstract: We demonstrate a novel way to analyse carrier recombination and transport processes in photorefractive semiconductors via the exposure characteristics of light induced diffraction. The results of a picosecond four-wave mixing on free carrier gratings in semi-insulating GaAs crystals at various grating periods and modulation depths of a light interference pattern are discussed. The role of a deep-trap recharging in carrier diffusion and recombination is sensitively revealed through a feedback effect of a space-charge field to non-equilibrium carrier transport.
authors.affiliation: Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio avenue 9, Building 3, LT-10222 Vilnius, Lithuania.
authors.forename: A
authors.initials: A
authors.lastname: Kadys
authors.forename: V
authors.initials: V
authors.lastname: Gudelis
authors.forename: M
authors.initials: M
authors.lastname: Sudzius
authors.forename: K
authors.initials: K
authors.lastname: Jarasiunas