title: Nitrogen interstitial defects in GaAs.
abstract: We have studied nitrogen interstitial defects in GaAs with first-principles calculations. On the basis of calculated formation energies we have determined the most common nitrogen defects and the transition levels for various charge states. The lowest energy interstitial-type defects are found to be N-N and N-As split interstitials for most of the experimentally relevant conditions. We have also compared two different methods of obtaining the potential correction needed in an accurate calculation of the formation energies and transition levels.
authors.affiliation: Laboratory of Physics, Helsinki University of Technology, PO Box 1100, FI-02015 HUT, Finland.
authors.forename: K
authors.initials: K
authors.lastname: Laaksonen
authors.forename: H-P
authors.initials: HP
authors.lastname: Komsa
authors.forename: T T
authors.initials: TT
authors.lastname: Rantala
authors.forename: R M
authors.initials: RM
authors.lastname: Nieminen