title: Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering.
abstract: In the present work we investigated the photoluminescence property of silicon nanocrystals in silicon nitride prepared by ammonia sputtering. Silicon nanocrystals were demonstrated to form even after thermal annealing at 700 °C. Compared with the control sample using N(2) as the reactive gas, the luminescence intensity of silicon nanocrystals in silicon nitride prepared by NH(3) sputtering was greatly increased. The improvement in photoluminescence was attributed to the introduction of hydrogen-related bonds, which could well passivate the nonradiative defects existing at the interface between silicon nanocrystals and the silicon nitride matrix.
authors: Department of Materials Science and Engineering, Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People's Republic of China.
authors: K
authors: K
authors: Ma
authors: J Y
authors: JY
authors: Feng
authors: Z J
authors: ZJ
authors: Zhang