title: Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface.
abstract: Linear and branched Fe(tpy)(2) complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.
authors: Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan.
authors: Hiroaki
authors: H
authors: Maeda
authors: Ryota
authors: R
authors: Sakamoto
authors: Yoshihiko
authors: Y
authors: Nishimori
authors: Junya
authors: J
authors: Sendo
authors: Fumiyuki
authors: F
authors: Toshimitsu
authors: Yoshinori
authors: Y
authors: Yamanoi
authors: Hiroshi
authors: H
authors: Nishihara