title: Gate-controlled rectifying barrier in a two-dimensional hole gas.
abstract: The current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 10(4) is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.
authors: L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy.
authors: R
authors: R
authors: Sordan
authors: A
authors: A
authors: Miranda
authors: J
authors: J
authors: Osmond
authors: D
authors: D
authors: Colombo
authors: D
authors: D
authors: Chrastina
authors: G
authors: G
authors: Isella
authors: H
authors: H
authors: von Känel