title: Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing.
abstract: We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with 14 dB DC extinction at 4 V bias.
authors: Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA. siddharth@ece.ucsb.edu
authors: Siddharth R
authors: SR
authors: Jain
authors: Matthew N
authors: MN
authors: Sysak
authors: Geza
authors: G
authors: Kurczveil
authors: John E
authors: JE
authors: Bowers
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon