title: Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells.
abstract: We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.
authors: Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan. r-akimoto@aist.go.jp
authors: Ryoichi
authors: R
authors: Akimoto
authors: Shin-ichiro
authors: S
authors: Gozu
authors: Teruo
authors: T
authors: Mozume
authors: Hiroshi
authors: H
authors: Ishikawa
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D007368:Interferometry / Q000295:instrumentation*; D055096:Optical Devices; D011789:Quantum Theory; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D018511:Systems Integration; D013685:Telecommunications / Q000295:instrumentation*