title: AlN nanorod and nanoneedle arrays prepared by chloride assisted chemical vapor deposition for field emission applications.
abstract: Hexagonal AlN nanorod and nanoneedle arrays were synthesized through the direct reaction of AlCl(3) and NH(3) by chemical vapor deposition at about 750 °C. Both the AlN nanoneedle and nanorod samples were of wurtzite structure and grew preferentially along the c-axis. With an increase in the ratio of NH(3) to Ar, an evolution from nanorods to nanoneedles was observed. A growth model was proposed to explain the possible growth mechanism. Measurements in field emission show that AlN nanoneedle arrays have a much lower turn-on field (3.1 V µm(-1)) compared to nanorod arrays (15.3 V µm(-1)), due to their large curvature geometry. The AlN nanoneedle arrays have potential applications in many fields, such as electron-emitting nanodevices and field-emission-based flat-panel displays.
authors: Beijing National Laboratory for Molecular Sciences (BNLMS), (The State Key Laboratory of Rare Earth Materials Chemistry and Applications), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China. Institute of Chemical Defense, Beijing 102205, People's Republic of China.
authors: Xubo
authors: X
authors: Song
authors: Zhigang
authors: Z
authors: Guo
authors: Jie
authors: J
authors: Zheng
authors: Xingguo
authors: X
authors: Li
authors: Yikang
authors: Y
authors: Pu