title: Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.
abstract: Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of [Formula: see text] ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas ([Formula: see text] ns).
authors: Electrical Engineering and California NanoSystems Institute, University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095, USA.
authors: J
authors: J
authors: Tatebayashi
authors: B L
authors: BL
authors: Liang
authors: R B
authors: RB
authors: Laghumavarapu
authors: D A
authors: DA
authors: Bussian
authors: H
authors: H
authors: Htoon
authors: V
authors: V
authors: Klimov
authors: G
authors: G
authors: Balakrishnan
authors: L R
authors: LR
authors: Dawson
authors: D L
authors: DL
authors: Huffaker