title: Resistance switch employing a simple metal nanogap junction.
abstract: In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.
authors: Yasuhisa
authors: Y
authors: Naitoh
authors: Masayo
authors: M
authors: Horikawa
authors: Hidekazu
authors: H
authors: Abe
authors: Tetsuo
authors: T
authors: Shimizu