title: MOS photodetectors based on Au-nanorod doped graphene electrodes.
abstract: By using Au-nanorod (Au-NR) doped graphene as a transparent conducting electrode, Si-based metal-oxide-semiconductor (MOS) photodetectors (PDs) exhibit high external quantum efficiency (EQE) and fast response time. It is found that upon adding Au-NRs to the graphene, a significant increase in EQE is observed for both planar and Si-nanotip (Si-NT) MOS PDs. The planar Si-based MOS PDs reveal a notable photoresponse with an EQE of 49% at the peak wavelength of 530 nm under zero bias and an EQE of 66% at the peak wavelength of 600 nm under - 0.4 V bias. For the Si-NTs MOS PD, it exhibits a relatively high EQE of 71% under - 4 V bias due to the effect of light trapping arising from the nature of the Si-NT array.
authors: Department of Physics, National Taiwan University, Taipei, Taiwan.
authors: Yung-Ting
authors: YT
authors: Chen
authors: Ya-Ping
authors: YP
authors: Hsieh
authors: Fu-Yu
authors: FY
authors: Shih
authors: Chih-Yung
authors: CY
authors: Chang
authors: Mario
authors: M
authors: Hofmann
authors: Yang-Fang
authors: YF
authors: Chen