title: Thermally assisted tunnelling in ambipolar field-effect transistors based on fullerene peapod bundles.
abstract: We report the first detailed studies of the electrical transport behaviour of C(70) fullerene peapod bundles at various temperatures from 400 K down to 4 K. With electrical breakdown, we have prepared ambipolar (i.e. both p- and n-type) field-effect transistors (FETs) using fullerene peapod bundles with high levels of performance. This paper focuses on the role of the Schottky barrier and the thermal activation energy in the transport behaviour of fullerene bundles. The temperature dependence of our measurements reveals that transport is dominated by thermally assisted tunnelling in fullerene bundles at low temperature.
authors: Department of Microelectronics, Peking University, Beijing 100871, People's Republic of China. Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China.
authors: Ao
authors: A
authors: Guo
authors: Yunyi
authors: Y
authors: Fu
authors: Lunhui
authors: L
authors: Guan
authors: Jia
authors: J
authors: Liu
authors: Zujin
authors: Z
authors: Shi
authors: Zhennan
authors: Z
authors: Gu
authors: Ru
authors: R
authors: Huang
authors: Xing
authors: X
authors: Zhang