title: Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals.
abstract: Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).
authors: Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.
authors: Jaewon
authors: J
authors: Jang
authors: Kyoungah
authors: K
authors: Cho
authors: Sang Heon
authors: SH
authors: Lee
authors: Sangsig
authors: S
authors: Kim