title: 10 Gb/s operation of photonic crystal silicon optical modulators.
abstract: We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.
authors: Department of Electrical and Computer Engineering, Yokohama National University, Hodogayaku, Yokohama, Japan. hong@ynu.ac.jp
authors: Hong C
authors: HC
authors: Nguyen
authors: Yuya
authors: Y
authors: Sakai
authors: Mizuki
authors: M
authors: Shinkawa
authors: Norihiro
authors: N
authors: Ishikura
authors: Toshihiko
authors: T
authors: Baba
mesh_terms: D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008872:Microwaves; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon