title: Modelling the formation of high aspect CdSe quantum wires: axial-growth versus oriented-attachment mechanisms.
abstract: Following the recent low temperature synthesis of high quality and single crystal CdSe quantum nanowires, we have used a thermodynamic model to investigate the plausibility of axial-growth and oriented-attachment formation mechanisms. Using surface energies for clean and alkylamine-passivated CdSe surfaces reported elsewhere by Manna et al (2005 J. Phys. Chem. B 109 6183), we have compared equilibrium and metastable shapes of CdSe nanowires as a function of aspect ratio and axial orientation for different degrees of surface passivation. In general, the theoretical results support the oriented-attachment of low aspect quantum dots or nanorods, followed by coalescence to form high aspect [Formula: see text] quantum wires.
authors: Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK.
authors: Amanda S
authors: AS
authors: Barnard
authors: Huifang
authors: H
authors: Xu
authors: Xiaochun
authors: X
authors: Li
authors: Narayan
authors: N
authors: Pradhan
authors: Xiaogang
authors: X
authors: Peng