title: Ultrathin In2O3 nanowires with diameters below 4 nm: synthesis, reversible wettability switching behavior, and transparent thin-film transistor applications.
abstract: Ultrafine one-dimensional (1-D) semiconducting nanostructures with diameters below 10 nm are attracting great research attention. Using a laser-ablation chemical vapor deposition (CVD) method, we reported the synthesis of single-crystal In(2)O(3) nanowires with diameter below 4 nm. The as-synthesized ultrathin In(2)O(3) nanowires act as the ultrathin branches of hierarchical In(2)O(3) nanostructures and show fast photoinduced switching surface wettability behaviors, and the contact angle decreased from 134.3 to 0° in 10 min. Transparent thin-film transistors (TTFTs) were fabricated using the as-synthesized product, and the device conductance was 1-2 orders higher than the average conductance of the In(2)O(3) single nanowire devices, revealing good opportunity in transparent electronics.
authors: Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China. gzshen@mail.hust.edu.cn
authors: Guozhen
authors: G
authors: Shen
authors: Bo
authors: B
authors: Liang
authors: Xianfu
authors: X
authors: Wang
authors: Hongtao
authors: H
authors: Huang
authors: Di
authors: D
authors: Chen
authors: Zhong Lin
authors: ZL
authors: Wang