title: Growth of one-dimensional Si/SiGe heterostructures by thermal CVD.
abstract: The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures.
authors: CEA, LITEN, DTNM, LCH, 38054 Grenoble, France.
authors: Celine
authors: C
authors: Mouchet
authors: Laurence
authors: L
authors: Latu-Romain
authors: Cyril
authors: C
authors: Cayron
authors: Emmanuelle
authors: E
authors: Rouviere
authors: Caroline
authors: C
authors: Celle
authors: Jean-Pierre
authors: JP
authors: Simonato