title: Three dimensional atom probe imaging of GaAsSb quantum rings.
abstract: Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33.
authors: Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain. ana.beltran@uca.es
authors: A M
authors: AM
authors: Beltrán
authors: E A
authors: EA
authors: Marquis
authors: A G
authors: AG
authors: Taboada
authors: J M
authors: JM
authors: Ripalda
authors: J M
authors: JM
authors: García
authors: S I
authors: SI
authors: Molina