title: Interface study on heterostructured GaP-GaAs nanowires.
abstract: The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH(3) molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature.
authors: Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands.
authors: Magnus T
authors: MT
authors: Borgström
authors: Marcel A
authors: MA
authors: Verheijen
authors: George
authors: G
authors: Immink
authors: Thierry de
authors: Td
authors: Smet
authors: Erik P A M
authors: EP
authors: Bakkers