title: Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration.
abstract: InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications.
authors: Institute of Electro-Optical Science & Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.
authors: Chih-Ciao
authors: CC
authors: Yang
authors: C H
authors: CH
authors: Jang
authors: Jinn-Kong
authors: JK
authors: Sheu
authors: Ming-Lun
authors: ML
authors: Lee
authors: Shang-Ju
authors: SJ
authors: Tu
authors: Feng-Wen
authors: FW
authors: Huang
authors: Yu-Hsiang
authors: YH
authors: Yeh
authors: Wei-Chih
authors: WC
authors: Lai