title: Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.
abstract: We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had ∼40 times lower specific contact resistances (SCRs) of 5.9 × 10(-6) ± 8.8 × 10(-6) Ω cm(2) compared to the values of Ti/Au ohmic contacts (2.6 × 10(-4) ± 3.4 × 10(-4) Ω cm(2)). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs.
authors: Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, Jeonju 561-756, Korea.
authors: Chan-Oh
authors: CO
authors: Jang
authors: Tae-Hong
authors: TH
authors: Kim
authors: Seung-Yong
authors: SY
authors: Lee
authors: Dong-Joo
authors: DJ
authors: Kim
authors: Sang-Kwon
authors: SK
authors: Lee