title: Optimal design of integrally gated CNT field-emission devices using a genetic algorithm.
abstract: A method to optimize the focusing quality of integrally gated CNT field-emission (FE) devices by combining field-emission modeling and a computational intelligence technique, genetic algorithm (GA), is proposed and demonstrated. In this work, the e-beam shape, as a characteristic parameter of electron-optical properties, is calculated by field-emission simulation modeling. Using a design tool that combines GA and physical modeling, a set of structural and electrical parameters for four FE device groups, including double-gate, triple-gate, quadruple-gate and quintuple-gate type, were optimized. The resultant FE devices exhibit satisfactory e-beam focusabilities and the extracted parameters with the best performance for each type of FE device were represented to be fabricated by a VLSI technique. The GA-based automatic design parameter extraction will significantly benefit the design of integrated electron-optical systems for versatile vacuum micro- and nano-electronic applications.
authors: National Nano-Device Laboratories, Science-Based Industrial Park, Hsinchu 30078, Taiwan.
authors: P Y
authors: PY
authors: Chen
authors: C H
authors: CH
authors: Chen
authors: J S
authors: JS
authors: Wu
authors: H C
authors: HC
authors: Wen
authors: W P
authors: WP
authors: Wang