title: Fabrication and electrical characterization of circuits based on individual tin oxide nanowires.
abstract: Two- and four-probe electrical measurements on individual tin oxide (SnO(2)) nanowires were performed to evaluate their conductivity and contact resistance. Electrical contacts between the nanowires and the microelectrodes were achieved with the help of an electron- and ion-beam-assisted direct-write nanolithography process. High contact resistance values and the nonlinear current-bias (I-V) characteristics of some of these devices observed in two-probe measurements can be explained by the existence of back-to-back Schottky barriers arising from the platinum-nanowire contacts. The nanoscale devices described herein were characterized using impedance spectroscopy, enabling the development of an equivalent circuit. The proposed methodology of nanocontacting and measurements can be easily applied to other nanowires and nanometre-sized materials.
authors: EME/CErMAE/CEMIC, Departament d'Electrònica, University of Barcelona, E-08028 Barcelona, Spain.
authors: Francisco
authors: F
authors: Hernández-Ramírez
authors: Albert
authors: A
authors: Tarancón
authors: Olga
authors: O
authors: Casals
authors: Jordi
authors: J
authors: Rodríguez
authors: Albert
authors: A
authors: Romano-Rodríguez
authors: Joan R
authors: JR
authors: Morante
authors: Sven
authors: S
authors: Barth
authors: Sanjay
authors: S
authors: Mathur
authors: Tae Y
authors: TY
authors: Choi
authors: Dimos
authors: D
authors: Poulikakos
authors: Victor
authors: V
authors: Callegari
authors: Philipp M
authors: PM
authors: Nellen