title: Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates.
abstract: Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (θ-θ(c)) after the critical InAs coverage θ(c) during the two- to three-dimensional (2D-3D) transition. For MBE the variation was consistent with the power law N(θ)∼(θ-θ(c))(α); while for MEE, the linear relation [Formula: see text] was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.
authors: Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
authors: J
authors: J
authors: Wu
authors: Y H
authors: YH
authors: Jiao
authors: P
authors: P
authors: Jin
authors: X J
authors: XJ
authors: Lv
authors: Z G
authors: ZG
authors: Wang