title: Current instability of carbon nanotube field effect transistors.
abstract: The current instability of carbon nanotube field effect transistors (CNTFETs) is systematically studied under the influence of applied voltages, surfactants and temperatures. The devices were fabricated from carbon nanotubes and sodium dodecyl benzene sulfonate (SDBS) suspension using an ac dielectrophoresis (DEP) technique. The source and drain current for as-prepared p-type CNTFETs show an increase with time for the on-state, but a decrease for the off-state. Comparisons between constant and intermittent biasing conditions reveal that mobile ions could be the origin of the current instability. After removal of adsorbed SDBS, opposite transient behaviors of the current were observed, which can be attributed to the charge trapping induced screening effect.
authors: Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
authors: Ning
authors: N
authors: Peng
authors: Qing
authors: Q
authors: Zhang
authors: Shaoning
authors: S
authors: Yuan
authors: Hong
authors: H
authors: Li
authors: Jingze
authors: J
authors: Tian
authors: Lap
authors: L
authors: Chan