title: Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures.
abstract: Negative thermal quenching of both the excitonic and green emissions is observed in ZnO nanosheets, from which the energy level of surface traps can be extracted based on a model of multi-level transitions. The present study demonstrates a non-destructive and easy method to determine the trap levels in semiconductor nanostructures.
authors: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. hphe@zju.edu.cn
authors: Haiping
authors: H
authors: He
authors: Yanjie
authors: Y
authors: Wang
authors: Jingrui
authors: J
authors: Wang
authors: Zhizhen
authors: Z
authors: Ye