title: Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers.
abstract: We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20 GHz repetition rate and around 1575 nm wavelength. The device has been realized using the active-passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.
authors: COBRA Research Institute, Eindhoven University of Technology-Den Dolech 2, 5612AZ Eindhoven, Netherlands. s.tahvili@tue.nl
authors: M S
authors: MS
authors: Tahvili
authors: Y
authors: Y
authors: Barbarin
authors: X J M
authors: XJ
authors: Leijtens
authors: T
authors: T
authors: de Vries
authors: E
authors: E
authors: Smalbrugge
authors: J
authors: J
authors: Bolk
authors: H P M M
authors: HP
authors: Ambrosius
authors: M K
authors: MK
authors: Smit
authors: E A J M
authors: EA
authors: Bente