title: Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient.
abstract: by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
authors: Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Delft, The Netherlands.
authors: D H K
authors: DH
authors: Murthy
authors: T
authors: T
authors: Xu
authors: W H
authors: WH
authors: Chen
authors: A J
authors: AJ
authors: Houtepen
authors: T J
authors: TJ
authors: Savenije
authors: L D A
authors: LD
authors: Siebbeles
authors: J P
authors: JP
authors: Nys
authors: C
authors: C
authors: Krzeminski
authors: B
authors: B
authors: Grandidier
authors: D
authors: D
authors: Stiévenard
authors: P
authors: P
authors: Pareige
authors: F
authors: F
authors: Jomard
authors: G
authors: G
authors: Patriarche
authors: O I
authors: OI
authors: Lebedev