title: A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.
abstract: Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
authors: Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea. myoungjae.lee@samsung.com
authors: Myoung-Jae
authors: MJ
authors: Lee
authors: Chang Bum
authors: CB
authors: Lee
authors: Dongsoo
authors: D
authors: Lee
authors: Seung Ryul
authors: SR
authors: Lee
authors: Man
authors: M
authors: Chang
authors: Ji Hyun
authors: JH
authors: Hur
authors: Young-Bae
authors: YB
authors: Kim
authors: Chang-Jung
authors: CJ
authors: Kim
authors: David H
authors: DH
authors: Seo
authors: Sunae
authors: S
authors: Seo
authors: U-In
authors: UI
authors: Chung
authors: In-Kyeong
authors: IK
authors: Yoo
authors: Kinam
authors: K
authors: Kim