title: Design and fabrication of vertical-injection GaN-based light-emitting diodes.
abstract: The fabrication process and design issues for the fabrication of vertical-injection GaN-based light-emitting diodes were investigated. The process yield was reduced according to the adhesion of reflective p-electrodes, the exposure of electroplated metal in plasma, and wet-etching induced surface textures. The chip design utilizing current blocking layer and branched n-electrode was found to significantly affect the power efficiency of LEDs.
authors: School of Semiconductor and Chemical Engineering and SPRC, Chonbuk National University, Jeonju 561-756, Korea. hskim7@jbnu.ac.kr
authors: Hyunsoo
authors: H
authors: Kim
authors: Kyoung-Kook
authors: KK
authors: Kim
authors: Sung-Nam
authors: SN
authors: Lee
authors: Kwang-Hyeon
authors: KH
authors: Baik