title: Gate voltage dependent characteristics of p-n diodes and bipolar transistors based on multiwall CN(x)/carbon nanotube intramolecular junctions.
abstract: The electrical transport characteristics of multiwall CN(x)/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CN(x) part and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor.
authors: Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
authors: W J
authors: WJ
authors: Zhang
authors: Q F
authors: QF
authors: Zhang
authors: Y
authors: Y
authors: Chai
authors: X
authors: X
authors: Shen
authors: J L
authors: JL
authors: Wu