title: Direct synthesis of single-walled carbon nanotubes selectively suspended on tips of vertically aligned silicon nanostructures fabricated by hydrogen plasma etching.
abstract: Here we present a method to synthesize single-walled carbon nanotubes (SWNTs) selectively suspended on tips of silicon-based nanostructure (Si-ns) templates. The Si-ns templates vertically aligned to the substrates are fabricated via an anisotropic etch process using reactive hydrogen plasmas, in which the etch-resistive nanomasks are the nanosized particles formed by thermal annealing of multi-layered catalytic thin films. After plasma etching, the nanosized self-masks remaining at the tips of the Si-ns directly serve as the catalysts for SWNT growth by thermal chemical vapour deposition. Consequently, the synthesized SWNTs are selectively suspended on the tips of the Si-ns, as revealed by characterizations using scanning electron microscopy and resonance Raman spectroscopy. This methodology provides a simple and straightforward approach to assemble two different nanomaterials, i.e., Si-ns and suspended SWNTs, together as a building block for constructing nanodevices for possible applications.
authors: Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 300, Republic of China.
authors: Cheng-Hui
authors: CH
authors: Weng
authors: Huan-Chieh
authors: HC
authors: Su
authors: Chao-Shun
authors: CS
authors: Yang
authors: Kun-Ying
authors: KY
authors: Shin
authors: Keh-Chyang
authors: KC
authors: Leou
authors: Chuen-Horng
authors: CH
authors: Tsai