title: Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time.
abstract: The growth and optical properties of GaN nanorods grown on Si(111) substrates by rf plasma assisted molecular-beam epitaxy are investigated by means of field emission scanning electron microscopy and photoluminescence measurements as a function of growth time. It is clearly demonstrated that the rate of growth of the nanorod diameter starts to increase after ∼90 min because of the coalescence of neighbouring nanorods. And the optical properties of the samples grown at a high growth rate are dramatically changed due to induced defects. The critical diameter for defect-free GaN nanorods is determined as below ∼140 nm under N-rich conditions.
authors: Quantum Functional Semiconductor Research Centre, Dongguk University, Seoul 100-715, Korea.
authors: C M
authors: CM
authors: Park
authors: Y S
authors: YS
authors: Park
authors: Hyunsik
authors: H
authors: Im
authors: T W
authors: TW
authors: Kang