title: Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
abstract: We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.
authors: Korea Electronics Technology Institute, Seongnam, Gyeonggi, South Korea.
authors: Yong Gon
authors: YG
authors: Seo
authors: Kwang Hyeon
authors: KH
authors: Baik
authors: Hooyoung
authors: H
authors: Song
authors: Ji-Su
authors: JS
authors: Son
authors: Kyunghwan
authors: K
authors: Oh
authors: Sung-Min
authors: SM
authors: Hwang
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D003116:Color; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; D000537:Aluminum Oxide