title: Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.
abstract: Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.
authors.affiliation: Electrical Engineering Department, S V National Institute of Technology, Surat 395007, Gujarat, India.
authors.forename: A K
authors.initials: AK
authors.lastname: Panchal
authors.forename: D K
authors.initials: DK
authors.lastname: Rai
authors.forename: C S
authors.initials: CS
authors.lastname: Solanki
mesh_terms: D025802:Electric Capacitance; D017097:Electric Impedance; D005740:Gases / Q000737:chemistry; D006244:Hardness; D006358:Hot Temperature; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D005740:Gases; D017655:Silicon Compounds; C032734:silicon nitride; D012825:Silicon