title: The electronic and structural properties of novel organomodified Si nanosheets.
abstract: We show that the properties of a new class of functional materials, silicon nanosheets modified with phenyl groups and H atoms, are highly promising for applications such as electronic devices. This novel material retains the sp(3) structure after functionalisation, resulting in a wide (direct) band gap of 1.92 eV.
authors.affiliation: Applied Physics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia.
authors.forename: Michelle J S
authors.initials: MJ
authors.lastname: Spencer
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Morishita
authors.forename: Masuhiro
authors.initials: M
authors.lastname: Mikami
authors.forename: Ian K
authors.initials: IK
authors.lastname: Snook
authors.forename: Yusuke
authors.initials: Y
authors.lastname: Sugiyama
authors.forename: Hideyuki
authors.initials: H
authors.lastname: Nakano