title: Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications.
abstract: We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky barrier by solving the Poisson equation, and (2) the Landauer-Büttiker approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors, and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.
authors.affiliation: Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01069 Dresden, Germany. daijiro.nozaki@tu-dresden.de
authors.forename: D
authors.initials: D
authors.lastname: Nozaki
authors.forename: J
authors.initials: J
authors.lastname: Kunstmann
authors.forename: F
authors.initials: F
authors.lastname: Zörgiebel
authors.forename: W M
authors.initials: WM
authors.lastname: Weber
authors.forename: T
authors.initials: T
authors.lastname: Mikolajick
authors.forename: G
authors.initials: G
authors.lastname: Cuniberti
mesh_terms: D015374:Biosensing Techniques; D020342:Finite Element Analysis; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D016012:Poisson Distribution; D055672:Static Electricity; D014173:Transistors, Electronic