title: Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures.
abstract: Blue-green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO(2) layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.
authors.affiliation: MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Fanquès 1, 08028, Barcelona, Spain. yberencen@el.ub.es
authors.forename: Y
authors.initials: Y
authors.lastname: Berencén
authors.forename: O
authors.initials: O
authors.lastname: Jambois
authors.forename: J M
authors.initials: JM
authors.lastname: Ramírez
authors.forename: J M
authors.initials: JM
authors.lastname: Rebled
authors.forename: S
authors.initials: S
authors.lastname: Estradé
authors.forename: F
authors.initials: F
authors.lastname: Peiró
authors.forename: C
authors.initials: C
authors.lastname: Domínguez
authors.forename: J A
authors.initials: JA
authors.lastname: Rodríguez
authors.forename: B
authors.initials: B
authors.lastname: Garrido