title: Wafer-scale strain engineering of ultrathin semiconductor crystalline layers.
abstract: The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.
authors.affiliation: Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA. mleite@caltech.edu.
authors.forename: Marina S
authors.initials: MS
authors.lastname: Leite
authors.forename: Emily C
authors.initials: EC
authors.lastname: Warmann
authors.forename: Gregory M
authors.initials: GM
authors.lastname: Kimball
authors.forename: Stanley P
authors.initials: SP
authors.lastname: Burgos
authors.forename: Dennis M
authors.initials: DM
authors.lastname: Callahan
authors.forename: Harry A
authors.initials: HA
authors.lastname: Atwater