title: Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer.
abstract: We report electrically injected lasing in GaAs quantum dots (QDs) grown on GaAs(001) by droplet epitaxy. High-quality GaAs QDs with superior uniformity are formed using improved growth techniques involving the insertion of a two-dimensional layer, control of the As flux for GaAs crystallization, and thin AlGaAs layer capping with high-temperature annealing. The QDs show ultra-narrow luminescence with a linewidth of 20 meV. Ground-state lasing from a laser diode containing fivefold-stacked QD layers is observed at low temperature under pulsed operation.
authors.affiliation: Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. JO.Masafumi@nims.go.jp
authors.forename: M
authors.initials: M
authors.lastname: Jo
authors.forename: T
authors.initials: T
authors.lastname: Mano
authors.forename: K
authors.initials: K
authors.lastname: Sakoda