title: Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.
abstract: The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.
authors.affiliation: Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
authors.forename: Junji
authors.initials: J
authors.lastname: Murata
authors.forename: Yuki
authors.initials: Y
authors.lastname: Shirasawa
authors.forename: Yasuhisa
authors.initials: Y
authors.lastname: Sano
authors.forename: Shun
authors.initials: S
authors.lastname: Sadakuni
authors.forename: Keita
authors.initials: K
authors.lastname: Yagi
authors.forename: Takeshi
authors.initials: T
authors.lastname: Okamoto
authors.forename: Azusa N
authors.initials: AN
authors.lastname: Hattori
authors.forename: Kenta
authors.initials: K
authors.lastname: Arima
authors.forename: Kazuto
authors.initials: K
authors.lastname: Yamauchi
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007909:Lenses; D008163:Luminescent Measurements / Q000295:instrumentation*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012666:Semiconductors; D013499:Surface Properties
chemical_list: C473348:gallium nitride; D005708:Gallium