title: Semimetal/semiconductor nanocomposites for thermoelectrics.
abstract: In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:In(x)Ga(1−x)Sb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By co-doping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μ m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.
authors.affiliation: Materials Department, University of California-Santa Barbara, CA 93106–5050, USA. luhong@engineering.ucsb.edu
authors.forename: Hong
authors.initials: H
authors.lastname: Lu
authors.forename: Peter G
authors.initials: PG
authors.lastname: Burke
authors.forename: Arthur C
authors.initials: AC
authors.lastname: Gossard
authors.forename: Gehong
authors.initials: G
authors.lastname: Zeng
authors.forename: Ashok T
authors.initials: AT
authors.lastname: Ramu
authors.forename: Je-Hyeong
authors.initials: JH
authors.lastname: Bahk
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
mesh_terms: D008674:Metals, Rare Earth / Q000737:chemistry; D053761:Nanocomposites / Q000737:chemistry*; D012666:Semiconductors; D013696:Temperature
chemical_list: D008674:Metals, Rare Earth