title: Combinatorial growth of Si nanoribbons.
abstract: Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of saw-like edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea. hjc@yonsei.ac.kr.
authors.forename: Tae-Eon
authors.initials: TE
authors.lastname: Park
authors.forename: Ki-Young
authors.initials: KY
authors.lastname: Lee
authors.forename: Ilsoo
authors.initials: I
authors.lastname: Kim
authors.forename: Joonyeon
authors.initials: J
authors.lastname: Chang
authors.forename: Peter
authors.initials: P
authors.lastname: Voorhees
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi