title: Aqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 °C Si-technology integration barrier.
abstract: Functional oxide films were obtained at low temperature by combination of aqueous precursors and a UV-assisted annealing process (aqueous photochemical solution deposition). For a PbTiO(3) model system, functional ferroelectric perovskite films were prepared at only 400 °C, a temperature compatible with the current Si-technology demands. Intrinsically photosensitive and environmentally friendly aqueous precursors can be prepared for most of the functional multimetal oxides, as additionally demonstrated here for multiferroic BiFeO(3), yielding virtually unlimited possibilities for this low-temperature fabrication technology.
authors.affiliation: Inorganic and Physical Chemistry Group, Institute for Materials Research, Universiteit Hasselt, IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium.
authors.forename: Christopher
authors.initials: C
authors.lastname: De Dobbelaere
authors.forename: Maria Lourdes
authors.initials: ML
authors.lastname: Calzada
authors.forename: Ricardo
authors.initials: R
authors.lastname: Jiménez
authors.forename: Jesús
authors.initials: J
authors.lastname: Ricote
authors.forename: Iñigo
authors.initials: I
authors.lastname: Bretos
authors.forename: Jules
authors.initials: J
authors.lastname: Mullens
authors.forename: An
authors.initials: A
authors.lastname: Hardy
authors.forename: Marlies K
authors.initials: MK
authors.lastname: Van Bael