title: Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.
abstract: Transparent conductive patterns have significant applications in various optoelectronic devices. A low cost solution process to directly fabricate transparent conductive oxide nanopatterns was developed without a conventional lithographic or etching process. A uniform and high density array of ITO and ZnRh(2)O(4) nanopatterns was fabricated with block copolymer self-assembly and spin coating technology. A low resistivity of about 3-9 × 10(-4)Ω cm and high transmission of 90% in the visible spectrum region was demonstrated with uniform ITO nanopatterns with feature size of 24 nm. The first p-type ZnRh(2)O(4) nanopattern was also fabricated with low resistivity and small feature size of 15 nm. This cost-efficient and large area scalable process can fabricate patterns with feature size down to sub-20 nm, providing a faster patterning capability compared to conventional photolithography and etching processes.
authors.affiliation: Department of Mechanical Engineering, the Hong Kong Polytechnic University, Kowloon, Hong Kong. apgdxia@polyu.edu.hk
authors.forename: Guodong
authors.initials: G
authors.lastname: Xia
authors.forename: Sumei
authors.initials: S
authors.lastname: Wang
mesh_terms: D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D019904:Polymethyl Methacrylate / Q000737:chemistry; D011137:Polystyrenes / Q000737:chemistry; D012238:Rhodium / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry*; D017967:Zinc Compounds / Q000737:chemistry*
chemical_list: D011137:Polystyrenes; D017971:Tin Compounds; D017967:Zinc Compounds; C522519:poly(styrene-block-methyl methacrylate); C109984:indium tin oxide; D019904:Polymethyl Methacrylate; D012238:Rhodium