title: Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.
abstract: In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.
authors.affiliation: ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China. yifang.chen@stfc.ac.uk.
authors.forename: Zhenkui
authors.initials: Z
authors.lastname: Shen
authors.forename: Zhihui
authors.initials: Z
authors.lastname: Chen
authors.forename: Qian
authors.initials: Q
authors.lastname: Lu
authors.forename: Zhijun
authors.initials: Z
authors.lastname: Qiu
authors.forename: Anquan
authors.initials: A
authors.lastname: Jiang
authors.forename: Xinping
authors.initials: X
authors.lastname: Qu
authors.forename: Yifang
authors.initials: Y
authors.lastname: Chen
authors.forename: Ran
authors.initials: R
authors.lastname: Liu