title: Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.
authors.affiliation: ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
authors.forename: Seo Hyoung
authors.initials: SH
authors.lastname: Chang
authors.forename: Shin Buhm
authors.initials: SB
authors.lastname: Lee
authors.forename: Dae Young
authors.initials: DY
authors.lastname: Jeon
authors.forename: So Jung
authors.initials: SJ
authors.lastname: Park
authors.forename: Gyu Tae
authors.initials: GT
authors.lastname: Kim
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.forename: Seung Chul
authors.initials: SC
authors.lastname: Chae
authors.forename: Hyang Keun
authors.initials: HK
authors.lastname: Yoo
authors.forename: Bo Soo
authors.initials: BS
authors.lastname: Kang
authors.forename: Myoung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Noh
mesh_terms: D049329:Nanostructures / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D014025:Titanium / Q000737:chemistry; D017968:Vanadium Compounds / Q000737:chemistry
chemical_list: D010087:Oxides; D017968:Vanadium Compounds; C009495:titanium dioxide; D014025:Titanium