title: Atom devices based on single dopants in silicon nanostructures.
abstract: Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.
authors.affiliation: Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan. romtabe@rie.shizuoka.ac.jp.
authors.forename: Daniel
authors.initials: D
authors.lastname: Moraru
authors.forename: Arief
authors.initials: A
authors.lastname: Udhiarto
authors.forename: Miftahul
authors.initials: M
authors.lastname: Anwar
authors.forename: Roland
authors.initials: R
authors.lastname: Nowak
authors.forename: Ryszard
authors.initials: R
authors.lastname: Jablonski
authors.forename: Earfan
authors.initials: E
authors.lastname: Hamid
authors.forename: Juli Cha
authors.initials: JC
authors.lastname: Tarido
authors.forename: Takeshi
authors.initials: T
authors.lastname: Mizuno
authors.forename: Michiharu
authors.initials: M
authors.lastname: Tabe