title: Epitaxial graphene transistors: enhancing performance via hydrogen intercalation.
abstract: We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm(2)/(V s) to >2000 cm(2)/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10× improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.
authors.affiliation: Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States. jrobinson@psu.edu
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson
authors.forename: Matthew
authors.initials: M
authors.lastname: Hollander
authors.forename: Michael
authors.initials: M
authors.lastname: Labella
authors.forename: Kathleen A
authors.initials: KA
authors.lastname: Trumbull
authors.forename: Randall
authors.initials: R
authors.lastname: Cavalero
authors.forename: David W
authors.initials: DW
authors.lastname: Snyder