title: Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells.
abstract: The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs), grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) and photoreflectance (PR) spectroscopies. The optical transitions energy observed in the PL and PR spectra of GaAsSbN/GaAs QWs show a strong decrease with a small increase in the N composition. These effects are explained through the interaction between the conduction band and a narrow resonant band formed by nitrogen states in the GaAsSbN alloy. The temperature dependence of ground-state energy of strained-layer QWs is analyzed using the Bose-Einstein relation in the temperature range from 9 to 295 K. The parameters that describe the temperature variations of the ground-state energies are evaluated and discussed.
authors.affiliation: Departamento de Engenharia de Materiais, Universidade Tecnológica Federal do Paraná-UTFPR, CEP 86812-460, Londrina-PR, Brazil.
authors.forename: S A
authors.initials: SA
authors.lastname: Lourenço
authors.forename: M A T
authors.initials: MA
authors.lastname: da Silva
authors.forename: I F L
authors.initials: IF
authors.lastname: Dias
authors.forename: J L
authors.initials: JL
authors.lastname: Duarte
authors.forename: J C
authors.initials: JC
authors.lastname: Harmand