title: CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films.
abstract: We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C(2)H(2)) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on SiO(2)/Si, and the influence of Co film thickness on monolayer graphene growth was studied, based on the solubility of C in Co. The surface area coverage of monolayer graphene was observed to increase with decreasing Co film thickness. A thorough Raman spectroscopic analysis reveals that graphene films, grown on an optimized Co film thickness, are principally composed of monolayer graphene. Transport properties of monolayer graphene films were investigated by fabrication of back-gated graphene field-effect transistors (GFETs), which exhibited high hole and electron mobility of ∼1600 cm(2)/V s and ∼1000 cm(2)/V s, respectively, and a low trap density of ∼1.2 × 10(11) cm(-2).
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Michael E
authors.initials: ME
authors.lastname: Ramón
authors.forename: Aparna
authors.initials: A
authors.lastname: Gupta
authors.forename: Chris
authors.initials: C
authors.lastname: Corbet
authors.forename: Domingo A
authors.initials: DA
authors.lastname: Ferrer
authors.forename: Hema C P
authors.initials: HC
authors.lastname: Movva
authors.forename: Gary
authors.initials: G
authors.lastname: Carpenter
authors.forename: Luigi
authors.initials: L
authors.lastname: Colombo
authors.forename: George
authors.initials: G
authors.lastname: Bourianoff
authors.forename: Mark
authors.initials: M
authors.lastname: Doczy
authors.forename: Deji
authors.initials: D
authors.lastname: Akinwande
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee