title: Spin filling of valley-orbit states in a silicon quantum dot.
abstract: We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N = 27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realisation in the near future of spin qubits based on silicon quantum dots.
authors.affiliation: Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW 2052, Australia. wee.lim@unsw.edu.au
authors.forename: W H
authors.initials: WH
authors.lastname: Lim
authors.forename: C H
authors.initials: CH
authors.lastname: Yang
authors.forename: F A
authors.initials: FA
authors.lastname: Zwanenburg
authors.forename: A S
authors.initials: AS
authors.lastname: Dzurak