title: Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene.
abstract: We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.
authors.affiliation: Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
authors.forename: Matthew J
authors.initials: MJ
authors.lastname: Hollander
authors.forename: Michael
authors.initials: M
authors.lastname: Labella
authors.forename: Zachary R
authors.initials: ZR
authors.lastname: Hughes
authors.forename: Michael
authors.initials: M
authors.lastname: Zhu
authors.forename: Kathleen A
authors.initials: KA
authors.lastname: Trumbull
authors.forename: Randal
authors.initials: R
authors.lastname: Cavalero
authors.forename: David W
authors.initials: DW
authors.lastname: Snyder
authors.forename: Xiaojun
authors.initials: X
authors.lastname: Wang
authors.forename: Euichul
authors.initials: E
authors.lastname: Hwang
authors.forename: Suman
authors.initials: S
authors.lastname: Datta
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson