title: Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).
abstract: We have determined the in-plane orientation of GaN nanowires relative to the Si (111) substrate on which they were grown. We used x-ray diffraction pole figure measurements to evidence two types of crystallographic orientation, all the nanowires having [Formula: see text] lateral facets. The proportion of these two orientations was determined and shown to be influenced by the pre-deposition of Al(Ga)N intermediate layers. In the main orientation, the GaN basal [Formula: see text] directions are aligned with the [Formula: see text] directions. This orientation corresponds to an in-plane coincidence of GaN and Si lattices.
authors.affiliation: LPN, CNRS, Route de Nozay, 91460 Marcoussis, France.
authors.forename: L
authors.initials: L
authors.lastname: Largeau
authors.forename: D L
authors.initials: DL
authors.lastname: Dheeraj
authors.forename: M
authors.initials: M
authors.lastname: Tchernycheva
authors.forename: G E
authors.initials: GE
authors.lastname: Cirlin
authors.forename: J C
authors.initials: JC
authors.lastname: Harmand