title: Structural evolution due to Zn and Te adsorption on As-exposed Si(211): density functional calculation.
abstract: Systematic theoretical investigations are carried out under the density functional formalism in an effort to understand the initial structural evolution due to the adsorption of ZnTe on As-exposed Si(211). Our calculations indicate that after the adsorption of Zn and Te on the As-exposed Si(211), the stable atomic structure qualitatively follows the ideal atomic structure of Si(211) with alteration of various bond lengths. Since the basic symmetry of the Si(211) is preserved after the adsorption of ZnTe, the deposition of ZnTe on the As terminated Si(211) prior to the deposition of CdTe and HgCdTe is useful for obtaining an ultimate quality layer of HgCdTe on Si(211). Some of our results are compared with the available experimental results, and they are found to agree with each other qualitatively.
authors.affiliation: Department of Physics, Visva-Bharati, Santiniketan 731235, India.
authors.forename: Bikash C
authors.initials: BC
authors.lastname: Gupta
authors.forename: Shyamal
authors.initials: S
authors.lastname: Konar
authors.forename: C H
authors.initials: CH
authors.lastname: Grein
authors.forename: S
authors.initials: S
authors.lastname: Sivananthan