title: Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties.
abstract: We demonstrate the p-type doping of Ge nanowires (NWs) and p-n junction arrays in a scalable vertically aligned structure with all processing performed below 400 °C. These structures are advantageous for the large scale production of parallel arrays of devices for nanoelectronics and sensing applications. Efficient methods for the oxide encapsulation, chemical mechanical polishing and cleaning of vertical Ge NWs embedded in silicon dioxide are reported. Approaches for avoiding the selective oxidation and dissolution of Ge NWs in aqueous solutions during chemical mechanical polishing and cleaning of oxide-encapsulated Ge NWs are emphasized. NWs were doped through the epitaxial deposition of a B-doped shell and transport measurements indicate doping concentrations on the order of 10(19) cm(-3).
authors.affiliation: Department of Mechanical Engineering, Stanford University, Stanford, CA 94035, USA.
authors.forename: Paul W
authors.initials: PW
authors.lastname: Leu
authors.forename: Hemant
authors.initials: H
authors.lastname: Adhikari
authors.forename: Makoto
authors.initials: M
authors.lastname: Koto
authors.forename: Kyoung-Ha
authors.initials: KH
authors.lastname: Kim
authors.forename: Philippe de
authors.initials: Pd
authors.lastname: Rouffignac
authors.forename: Ann F
authors.initials: AF
authors.lastname: Marshall
authors.forename: Roy G
authors.initials: RG
authors.lastname: Gordon
authors.forename: Christopher E D
authors.initials: CE
authors.lastname: Chidsey
authors.forename: Paul C
authors.initials: PC
authors.lastname: McIntyre