title: Field effect transistor from individual trigonal Se nanowire.
abstract: Trigonal Se nanowires (NWs) were fabricated through a high-yield chemical solution process. The morphology and structural characterization of the Se NWs were investigated using transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and x-ray diffraction (XRD). The results indicated that the Se NWs grow along the crystallographic c-axis, the direction of which is parallel to the helical chains of Se atoms. Single Se NW field effect transistor (FET) devices were prepared through photolithographic patterning. The device performance shows that the Se NWs are p-type semiconductors displaying mobility up to 30 cm(2) V(-1) s(-1). This finding on the Se NW FETs has broad implications and provides very useful fundamental information necessary for future applications in the fabrication of high-quality NW FETs and other electronic devices.
authors.affiliation: Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Special Functional Materials, South China University of Technology, Guangzhou 510640, People's Republic of China.
authors.forename: Donghuan
authors.initials: D
authors.lastname: Qin
authors.forename: Hong
authors.initials: H
authors.lastname: Tao
authors.forename: Yun
authors.initials: Y
authors.lastname: Zhao
authors.forename: Linfeng
authors.initials: L
authors.lastname: Lan
authors.forename: Keith
authors.initials: K
authors.lastname: Chan
authors.forename: Yong
authors.initials: Y
authors.lastname: Cao