title: Unintentional conductivity of indium nitride: transport modelling and microscopic origins.
abstract: A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
authors.affiliation: Department of Physics, University of Warwick, Coventry CV4 7AL, UK.
authors.forename: P D C
authors.initials: PD
authors.lastname: King
authors.forename: T D
authors.initials: TD
authors.lastname: Veal
authors.forename: C F
authors.initials: CF
authors.lastname: McConville