title: Mechanism of bright red emission in Si nanoclusters.
abstract: A bright photoluminescence around 1.7 eV is observed for post-annealed samples of 1 MeV Si(2+) implanted in an SiO(2) matrix. A super-linear power dependence of photoluminescence intensity accompanied by pulse shortening under continuous wave laser excitation is recorded without any spectral narrowing. An emission process comprised of an initial non-radiative recombination (time constant ∼280-315 ps) of excited carriers in the defect states in SiO(2) matrices to the conduction band minima of nc-Si, followed by a slower process of radiative recombination in the direct band transition for nc-Si along with a non-radiative Auger recombination (time constant ∼2.67 ns) is proposed.
authors.affiliation: Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India.
authors.forename: S
authors.initials: S
authors.lastname: Dhara
authors.forename: C-Y
authors.initials: CY
authors.lastname: Lu
authors.forename: K G M
authors.initials: KG
authors.lastname: Nair
authors.forename: K-H
authors.initials: KH
authors.lastname: Chen
authors.forename: C-P
authors.initials: CP
authors.lastname: Chen
authors.forename: Y-F
authors.initials: YF
authors.lastname: Huang
authors.forename: C
authors.initials: C
authors.lastname: David
authors.forename: L-C
authors.initials: LC
authors.lastname: Chen
authors.forename: Baldev
authors.initials: B
authors.lastname: Raj