title: Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.
abstract: We discuss the molecular beam epitaxy (MBE) growth methods of emission wavelength control and property investigations for different types of InAs/(In)GaAsN/GaAs heterostructures containing InGaAsN quantum-size layers: (1) InGaAsN quantum wells deposited by the conventional mode in a GaAs matrix, (2) InAs quantum dots deposited in a GaAsN matrix or covered by an InGaAs(N) layer, and (3) InAs/InGaAsN/GaAsN strain-compensated superlattices with quantum wells and quantum dots. The structures under investigation have demonstrated photoluminescence emission in a wavelength range of ∼1.3-1.8 µm at room temperature without essential deterioration of the radiative properties.
authors.affiliation: Ioffe Physical Technical Institute, 26 Politechnicheskaya, St Petersburg 194021, Russia.
authors.forename: V V
authors.initials: VV
authors.lastname: Mamutin
authors.forename: A Yu
authors.initials: AY
authors.lastname: Egorov
authors.forename: N V
authors.initials: NV
authors.lastname: Kryzhanovskaya