title: Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications.
abstract: Large-area slantingly-aligned silicon nanowire arrays (SA-SiNW arrays) on Si(111) substrate have been fabricated by wet chemical etching with dry metal deposition method and employed in the fabrication of solar cells for the first time. The formation of SA-SiNW arrays possibly results from the anisotropic etching of silicon by silver catalysts. Superior to the previous cells fabricated with vertically-aligned silicon nanowire arrays (VA-SiNW arrays), the SA-SiNW array solar cells exhibit a highest power conversion efficiency of 11.37%. The improved device performance is attributed to the integration of the excellent anti-reflection property of the arrays and the better electrical contact of the cell as a result of the special slantingly-aligned structure. The high surface recombination velocity of minority carriers in SiNW arrays is still the main limitation on cell performance.
authors.affiliation: Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, People's Republic of China. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: Hui
authors.initials: H
authors.lastname: Fang
authors.forename: Xudong
authors.initials: X
authors.lastname: Li
authors.forename: Shuang
authors.initials: S
authors.lastname: Song
authors.forename: Ying
authors.initials: Y
authors.lastname: Xu
authors.forename: Jing
authors.initials: J
authors.lastname: Zhu