title: A ZnO nanowire vacuum pressure sensor.
abstract: In this study, we report the growth and characterization of lateral ZnO nanowires (NWs) on ZnO:Ga/glass templates. Using x-ray diffraction and micro-Raman spectroscopy, it was found that crystal quality of the as-grown ZnO NWs is good. It was also found that the average length and average diameter of the laterally grown ZnO NWs were 5 µm and 30 nm, respectively. A vacuum pressure sensor was then fabricated using a single NW bridging across two electrodes. By measuring the current-voltage characteristics of the samples at low pressure, we found that the currents were of 17, 34.28, 57.37 and 96.06 nA for the ZnO NW measured at 1 × 10(-3) Torr, 1 × 10(-4) Torr, 3 × 10(-5) Torr and 5 × 10(-6) Torr, respectively. These values suggest that the laterally grown ZnO NWs prepared in this study are potentially useful for vacuum pressure sensing.
authors.affiliation: Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan.
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang
authors.forename: Ting-Jen
authors.initials: TJ
authors.lastname: Hsueh
authors.forename: Cheng-Liang
authors.initials: CL
authors.lastname: Hsu
authors.forename: Yan-Ru
authors.initials: YR
authors.lastname: Lin
authors.forename: I-Cherng
authors.initials: IC
authors.lastname: Chen
authors.forename: Bohr-Ran
authors.initials: BR
authors.lastname: Huang