title: Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.
abstract: Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.
authors.affiliation: Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China. Mesophotonics Limited, Hsinchu 300, Taiwan, Republic of China.
authors.forename: H W
authors.initials: HW
authors.lastname: Huang
authors.forename: C H
authors.initials: CH
authors.lastname: Lin
authors.forename: C C
authors.initials: CC
authors.lastname: Yu
authors.forename: B D
authors.initials: BD
authors.lastname: Lee
authors.forename: C H
authors.initials: CH
authors.lastname: Chiu
authors.forename: C F
authors.initials: CF
authors.lastname: Lai
authors.forename: H C
authors.initials: HC
authors.lastname: Kuo
authors.forename: K M
authors.initials: KM
authors.lastname: Leung
authors.forename: T C
authors.initials: TC
authors.lastname: Lu
authors.forename: S C
authors.initials: SC
authors.lastname: Wang