title: The tunable bistable and multistable memory effect in polymer nanowires.
abstract: Tunable bistable and multistable resistance switching in conducting polymer nanowires has been reported. These wires show reproducible switching transition under several READ-WRITE-ERASE cycles. The switching is observed at low temperature and the ON/OFF resistance ratio for the voltage biased switching transition was found to be more than 10(3). Current biased measurements show lower ON/OFF ratio and some of the nanowires exhibit a multistable switching transition in current biased measurements. The threshold voltage for switching and the ON/OFF resistance ratio can be tuned by changing doping concentration of the nanowires.
authors.affiliation: Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India.
authors.forename: Atikur
authors.initials: A
authors.lastname: Rahman
authors.forename: Milan K
authors.initials: MK
authors.lastname: Sanyal