title: Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer.
abstract: A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO(2)) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO(2) coated Si substrate are realized from the appropriately thick oxidized Zn seed layer by a vapor-solid growth mechanism by catalyst-free thermal chemical vapor deposition (CVD). These experimental results raise the possibility of using the nanowires as functional blocks for high-density integration systems and/or photonic applications.
authors.affiliation: Samsung Advanced Institute of Technology, PO Box 111, Suwon 440-600, Korea.
authors.forename: S N
authors.initials: SN
authors.lastname: Cha
authors.forename: B G
authors.initials: BG
authors.lastname: Song
authors.forename: J E
authors.initials: JE
authors.lastname: Jang
authors.forename: J E
authors.initials: JE
authors.lastname: Jung
authors.forename: I T
authors.initials: IT
authors.lastname: Han
authors.forename: J H
authors.initials: JH
authors.lastname: Ha
authors.forename: J P
authors.initials: JP
authors.lastname: Hong
authors.forename: D J
authors.initials: DJ
authors.lastname: Kang
authors.forename: J M
authors.initials: JM
authors.lastname: Kim