title: Gallium nitride heterostructures on 3D structured silicon.
abstract: We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.
authors.affiliation: Institut für Halbleitertechnik, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany.
authors.forename: Sönke
authors.initials: S
authors.lastname: Fündling
authors.forename: Unsal
authors.initials: U
authors.lastname: Sökmen
authors.forename: Erwin
authors.initials: E
authors.lastname: Peiner
authors.forename: Thomas
authors.initials: T
authors.lastname: Weimann
authors.forename: Peter
authors.initials: P
authors.lastname: Hinze
authors.forename: Uwe
authors.initials: U
authors.lastname: Jahn
authors.forename: Achim
authors.initials: A
authors.lastname: Trampert
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert
authors.forename: Andrey
authors.initials: A
authors.lastname: Bakin
authors.forename: Hergo-Heinrich
authors.initials: HH
authors.lastname: Wehmann
authors.forename: Andreas
authors.initials: A
authors.lastname: Waag