title: Effective growth of boron nitride nanotubes by thermal chemical vapor deposition.
abstract: Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.
authors.affiliation: Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
authors.forename: Chee Huei
authors.initials: CH
authors.lastname: Lee
authors.forename: Jiesheng
authors.initials: J
authors.lastname: Wang
authors.forename: Vijaya K
authors.initials: VK
authors.lastname: Kayatsha
authors.forename: Jian Y
authors.initials: JY
authors.lastname: Huang
authors.forename: Yoke Khin
authors.initials: YK
authors.lastname: Yap