title: Photodetectors based on intersubband transitions using III-nitride superlattice structures.
abstract: We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.
authors.affiliation: University of Neuchatel, 1 A.-L. Breguet, 2000 Neuchatel, Switzerland.
authors.forename: Daniel
authors.initials: D
authors.lastname: Hofstetter
authors.forename: Esther
authors.initials: E
authors.lastname: Baumann
authors.forename: Fabrizio R
authors.initials: FR
authors.lastname: Giorgetta
authors.forename: Ricardo
authors.initials: R
authors.lastname: Théron
authors.forename: Hong
authors.initials: H
authors.lastname: Wu
authors.forename: William J
authors.initials: WJ
authors.lastname: Schaff
authors.forename: Jahan
authors.initials: J
authors.lastname: Dawlaty
authors.forename: Paul A
authors.initials: PA
authors.lastname: George
authors.forename: Lester F
authors.initials: LF
authors.lastname: Eastman
authors.forename: Farhan
authors.initials: F
authors.lastname: Rana
authors.forename: Prem K
authors.initials: PK
authors.lastname: Kandaswamy
authors.forename: Sylvain
authors.initials: S
authors.lastname: Leconte
authors.forename: Eva
authors.initials: E
authors.lastname: Monroy