title: Accessing the transport properties of graphene and its multilayers at high carrier density.
abstract: We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. yejianting@ap.t.u-tokyo.ac.jp
authors.forename: Jianting
authors.initials: J
authors.lastname: Ye
authors.forename: Monica F
authors.initials: MF
authors.lastname: Craciun
authors.forename: Mikito
authors.initials: M
authors.lastname: Koshino
authors.forename: Saverio
authors.initials: S
authors.lastname: Russo
authors.forename: Seiji
authors.initials: S
authors.lastname: Inoue
authors.forename: Hongtao
authors.initials: H
authors.lastname: Yuan
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Shimotani
authors.forename: Alberto F
authors.initials: AF
authors.lastname: Morpurgo
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa