title: Towards registered single quantum dot photonic devices.
abstract: We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process.
authors.affiliation: Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK.
authors.forename: K H
authors.initials: KH
authors.lastname: Lee
authors.forename: F S F
authors.initials: FS
authors.lastname: Brossard
authors.forename: M
authors.initials: M
authors.lastname: Hadjipanayi
authors.forename: X
authors.initials: X
authors.lastname: Xu
authors.forename: F
authors.initials: F
authors.lastname: Waldermann
authors.forename: A M
authors.initials: AM
authors.lastname: Green
authors.forename: D N
authors.initials: DN
authors.lastname: Sharp
authors.forename: A J
authors.initials: AJ
authors.lastname: Turberfield
authors.forename: D A
authors.initials: DA
authors.lastname: Williams
authors.forename: R A
authors.initials: RA
authors.lastname: Taylor