title: Precursor evaluation for in situ InP nanowire doping.
abstract: The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n-type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.
authors.affiliation: Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
authors.forename: M T
authors.initials: MT
authors.lastname: Borgström
authors.forename: E
authors.initials: E
authors.lastname: Norberg
authors.forename: P
authors.initials: P
authors.lastname: Wickert
authors.forename: H A
authors.initials: HA
authors.lastname: Nilsson
authors.forename: J
authors.initials: J
authors.lastname: Trägårdh
authors.forename: K A
authors.initials: KA
authors.lastname: Dick
authors.forename: G
authors.initials: G
authors.lastname: Statkute
authors.forename: P
authors.initials: P
authors.lastname: Ramvall
authors.forename: K
authors.initials: K
authors.lastname: Deppert
authors.forename: L
authors.initials: L
authors.lastname: Samuelson