title: Assembly of CdS quantum dots onto mesoscopic TiO(2) films for quantum dot-sensitized solar cell applications.
abstract: Colloidal cadmium sulfide (CdS) quantum dots (QDs) were prepared and surface modified by mercaptosuccinic acid (MSA) to render a surface with carboxylic acid groups (MSA-CdS). The MSA-CdS QDs were then assembled onto bare TiO(2) mesoporous films using the carboxylic groups/TiO(2) interaction. The TiO(2) film was also surface modified by 3-mercaptopropyl trimethoxysilane (MPTMS) or 3-aminopropyl-methyl diethoxysilane (APMDS) to prepare, respectively, a thiol (-SH) or amino (-NH(2)) terminated surface for binding with the CdS QDs. The experimental results showed that the MPTMS-modified film has the highest adsorption rate and adsorption amount to the CdS QDs, attributable to the strong thiol/CdS interaction. In contrast, the adsorption rate and incorporated amount of the QDs on the bare TiO(2) film are much lower than for the silane-modified films. The incident photon-to-current conversion efficiency (IPCE) obtained for the CdS-sensitized TiO(2) electrode was about 20% (at 400 nm) for the bare TiO(2), 13% for the MPTMS-TiO(2), and 6% for APMDS-TiO(2). The current-voltage measurement under dark conditions reveals a higher dark current on the MPTMS- and APMDS-modified electrodes, indicating a lower coverage ratio of CdS on these TiO(2) films. This result is attributed to the fast adsorption rate of CdS QDs on the bottleneck of a mesopore which inhibits the transport of the QDs deep into the inner region of a pore. For the bare TiO(2) film, the lower incorporated amount of CdS but higher energy conversion efficiency indicates the formation of a better-covered CdS QDs monolayer. The moderate adsorption rate of MSA-CdS QDs using the carboxylic acid/TiO(2) interaction is responsible for the efficient assembly of QDs onto the mesoporous TiO(2) films.
authors.affiliation: Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
authors.forename: Yu-Jen
authors.initials: YJ
authors.lastname: Shen
authors.forename: Yuh-Lang
authors.initials: YL
authors.lastname: Lee