title: Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor.
abstract: A new homoleptic sublimable indium(III) guanidinate, (In[(N(i)Pr)(2)CNMe(2)](3) (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P1 space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by (1)H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.
authors.affiliation: Department of Chemistry, Carleton University, Ottawa, Canada K1S 5B6. sean_barry@carleton.ca
authors.forename: Seán T
authors.initials: ST
authors.lastname: Barry
authors.forename: Peter G
authors.initials: PG
authors.lastname: Gordon
authors.forename: Matthew J
authors.initials: MJ
authors.lastname: Ward
authors.forename: Mikko J
authors.initials: MJ
authors.lastname: Heikkila
authors.forename: Wesley H
authors.initials: WH
authors.lastname: Monillas
authors.forename: Glenn P A
authors.initials: GP
authors.lastname: Yap
authors.forename: Mikko
authors.initials: M
authors.lastname: Ritala
authors.forename: Markku
authors.initials: M
authors.lastname: Leskelä