title: Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers.
abstract: A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors.
authors.affiliation: Institute of Physics, Academia Sinica, Taipei 115, Taiwan, Republic of China.
authors.forename: Shu-Cheng
authors.initials: SC
authors.lastname: Chin
authors.forename: Yuan-Chih
authors.initials: YC
authors.lastname: Chang
authors.forename: Chen-Chih
authors.initials: CC
authors.lastname: Hsu
authors.forename: Wei-Hsiang
authors.initials: WH
authors.lastname: Lin
authors.forename: Chih-I
authors.initials: CI
authors.lastname: Wu
authors.forename: Chia-Seng
authors.initials: CS
authors.lastname: Chang
authors.forename: Tien T
authors.initials: TT
authors.lastname: Tsong
authors.forename: Wei-Yen
authors.initials: WY
authors.lastname: Woon
authors.forename: Li-Te
authors.initials: LT
authors.lastname: Lin
authors.forename: Hun-Jan
authors.initials: HJ
authors.lastname: Tao