title: Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well.
abstract: Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111)B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (μ-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the μ-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.
authors.affiliation: Laboratory on Optoelectronic Systems, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
authors.forename: L
authors.initials: L
authors.lastname: Yang
authors.forename: J
authors.initials: J
authors.lastname: Motohisa
authors.forename: K
authors.initials: K
authors.lastname: Tomioka
authors.forename: J
authors.initials: J
authors.lastname: Takeda
authors.forename: T
authors.initials: T
authors.lastname: Fukui
authors.forename: M M
authors.initials: MM
authors.lastname: Geng
authors.forename: L X
authors.initials: LX
authors.lastname: Jia
authors.forename: L
authors.initials: L
authors.lastname: Zhang
authors.forename: Y L
authors.initials: YL
authors.lastname: Liu