title: Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe.
abstract: The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.
authors.affiliation: A F Ioffe Physical-Technical Institute, St Petersburg, Russia.
authors.forename: A S
authors.initials: AS
authors.lastname: Gurevich
authors.forename: V P
authors.initials: VP
authors.lastname: Kochereshko
authors.forename: J
authors.initials: J
authors.lastname: Bleuse
authors.forename: H
authors.initials: H
authors.lastname: Mariette
authors.forename: A
authors.initials: A
authors.lastname: Waag
authors.forename: R
authors.initials: R
authors.lastname: Akimoto