title: Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.
abstract: InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.
authors.affiliation: Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA.
authors.forename: P S
authors.initials: PS
authors.lastname: Wong
authors.forename: B L
authors.initials: BL
authors.lastname: Liang
authors.forename: V G
authors.initials: VG
authors.lastname: Dorogan
authors.forename: A R
authors.initials: AR
authors.lastname: Albrecht
authors.forename: J
authors.initials: J
authors.lastname: Tatebayashi
authors.forename: X
authors.initials: X
authors.lastname: He
authors.forename: N
authors.initials: N
authors.lastname: Nuntawong
authors.forename: Yu I
authors.initials: YI
authors.lastname: Mazur
authors.forename: G J
authors.initials: GJ
authors.lastname: Salamo
authors.forename: S R J
authors.initials: SR
authors.lastname: Brueck
authors.forename: D L
authors.initials: DL
authors.lastname: Huffaker