title: A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.
abstract: Reversible tuning of the transport properties of metallic conducting systems is not reported widely in the literature. Here, we report a junction field-effect transistor (FET) based on a transparent conducting oxide (TCO) nanoparticle channel and a solid polymer electrolyte as a gate. The device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. A device with a metallic conducting channel made of indium tin oxide (ITO) nanoparticles exhibits an on/off ratio of 2 × 10(3) even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. An FET device with metal-like conductance is always favored for the low dimensions of the device and a high on-state current. The field-effect mobility is calculated to be 24.3 cm(2) V(-1) s(-1). A subthreshold swing between 230 and 425 mV dec(-1) is observed.
authors.affiliation: Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, PO Box 3640, D-76021 Karlsruhe, Germany.
authors.forename: S
authors.initials: S
authors.lastname: Dasgupta
authors.forename: S
authors.initials: S
authors.lastname: Gottschalk
authors.forename: R
authors.initials: R
authors.lastname: Kruk
authors.forename: H
authors.initials: H
authors.lastname: Hahn