title: Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si(3)N(4) passivation.
abstract: Carbon nanotube field-effect transistors with Si(3)N(4) passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum current rectification ratio of 4.6 × 10(3) is observed. The rectifying characteristic vanishes in a vacuum but recovers once the devices are exposed to air. From our experiments, key parameters, such as critical gas pressure, adsorption energy of oxygen molecules and the contact barrier height modulation, can be obtained for studying the gaseous interaction in the carbon nanotube devices.
authors.affiliation: Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Ning
authors.initials: N
authors.lastname: Peng
authors.forename: Qing
authors.initials: Q
authors.lastname: Zhang
authors.forename: Ooi Kiang
authors.initials: OK
authors.lastname: Tan
authors.forename: Nicola
authors.initials: N
authors.lastname: Marzari