title: Electronic structure of CoSi(2) films on Si(111) studied using time-resolved two-photon photoemission.
abstract: The occupied and unoccupied electronic structure of thin epitaxial CoSi(2) films grown on Si(111) substrates was studied using time-resolved two-photon photoemission and valence-band photoemission spectroscopy. The work function of the sample surfaces and the Schottky barrier height at the metal-semiconductor interface were measured as a function of annealing temperature. The photoemission data reveal several occupied and unoccupied electronic states which exhibit a high sensitivity to the annealing temperature. Time-resolved measurements show a behavior typical for a short-lived hot-electron gas and indications for an image-potential resonance.
authors.affiliation: Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Kutschera
authors.forename: T
authors.initials: T
authors.lastname: Groth
authors.forename: C
authors.initials: C
authors.lastname: Kentsch
authors.forename: I L
authors.initials: IL
authors.lastname: Shumay
authors.forename: M
authors.initials: M
authors.lastname: Weinelt
authors.forename: Th
authors.initials: T
authors.lastname: Fauster