title: Ion beam nanopatterning in graphite: characterization of single extended defects.
abstract: The morphology and the electronic structure of a single focused ion-beam-induced artificial extended defect is probed by several methods including micro-Raman spectroscopy, atomic force and scanning tunneling microscopies and Monte Carlo and/or semi-analytical simulation within standard codes. The efficiency of the artificial defect for deposited metallic cluster pinning is also investigated. We show a correlation between the ion dose, morphology, electronic structure and cluster trapping efficiency. At room temperature, cluster pinning is efficient when the displacement per atom is one or more. Well-ordered patterned cluster networks are considered for potential applications.
authors.affiliation: Laboratoire de la Matière Condensée et Nanostructures UMR 5586, Université de Lyon, Université Lyon I et CNRS, Bâtiment Lon Brillouin, 6 rue Ampère, Domaine de la Doua, F-69622 Villeurbanne, France.
authors.forename: P
authors.initials: P
authors.lastname: Mélinon
authors.forename: A
authors.initials: A
authors.lastname: Hannour
authors.forename: L
authors.initials: L
authors.lastname: Bardotti
authors.forename: B
authors.initials: B
authors.lastname: Prével
authors.forename: J
authors.initials: J
authors.lastname: Gierak
authors.forename: E
authors.initials: E
authors.lastname: Bourhis
authors.forename: G
authors.initials: G
authors.lastname: Faini
authors.forename: B
authors.initials: B
authors.lastname: Canut