title: Monolithic GaAs/InGaP nanowire light emitting diodes on silicon.
abstract: Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.
authors.affiliation: Qunano AB, Scheelevägen 17, Ideon Science Park, S-223 70 Lund, Sweden.
authors.forename: C Patrik T
authors.initials: CP
authors.lastname: Svensson
authors.forename: Thomas
authors.initials: T
authors.lastname: Mårtensson
authors.forename: Johanna
authors.initials: J
authors.lastname: Trägårdh
authors.forename: Christina
authors.initials: C
authors.lastname: Larsson
authors.forename: Michael
authors.initials: M
authors.lastname: Rask
authors.forename: Dan
authors.initials: D
authors.lastname: Hessman
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Jonas
authors.initials: J
authors.lastname: Ohlsson