title: Suppression of the internal electric field effects in ZnO/Zn(0.7)Mg(0.3)O quantum wells by ion-implantation induced intermixing.
abstract: Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.
authors.affiliation: Centre for Atom Optics and Ultrafast Spectroscopy, Swinburne University of Technology, Melbourne 3122, Australia.
authors.forename: J A
authors.initials: JA
authors.lastname: Davis
authors.forename: L V
authors.initials: LV
authors.lastname: Dao
authors.forename: X
authors.initials: X
authors.lastname: Wen
authors.forename: C
authors.initials: C
authors.lastname: Ticknor
authors.forename: P
authors.initials: P
authors.lastname: Hannaford
authors.forename: V A
authors.initials: VA
authors.lastname: Coleman
authors.forename: H H
authors.initials: HH
authors.lastname: Tan
authors.forename: C
authors.initials: C
authors.lastname: Jagadish
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authors.lastname: Koike
authors.forename: S
authors.initials: S
authors.lastname: Sasa
authors.forename: M
authors.initials: M
authors.lastname: Inoue
authors.forename: M
authors.initials: M
authors.lastname: Yano