title: Non-Markovian damping of Rabi oscillations in semiconductor quantum dots.
abstract: A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.
authors.affiliation: Institute of Physics, NASB, Nezalezhnasci Avenue 68, Minsk 220072, Belarus.
authors.forename: D
authors.initials: D
authors.lastname: Mogilevtsev
authors.forename: A P
authors.initials: AP
authors.lastname: Nisovtsev
authors.forename: S
authors.initials: S
authors.lastname: Kilin
authors.forename: S B
authors.initials: SB
authors.lastname: Cavalcanti
authors.forename: H S
authors.initials: HS
authors.lastname: Brandi
authors.forename: L E
authors.initials: LE
authors.lastname: Oliveira