title: Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si.
abstract: The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.
authors.affiliation: Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia. cheong@eng.usm.my.
authors.forename: Yew Hoong
authors.initials: YH
authors.lastname: Wong
authors.forename: Kuan Yew
authors.initials: KY
authors.lastname: Cheong