title: Evidence for a vacancy-phosphorus-oxygen complex in silicon.
abstract: Low-energy (∼0.5 MeV) electrons arising from (60)Co γ-irradiation were used to create phosphorus-vacancy (PV) pairs and oxygen-vacancy pairs in Czochralski-grown Si. Positron annihilation data show that PV pairs anneal in two stages: the commonly observed stage around 125 °C, where one third of the pairs disappear with an activation energy of 0.8 ± 0.2 eV, and a new stage where none disappear, but form PV-oxygen complexes with an activation energy of 2.0 ± 0.2 eV.
authors.affiliation: Department of Physics, University of Winnipeg, 515 Portage Avenue, Winnipeg, MB, R3B 2E9, Canada.
authors.forename: S
authors.initials: S
authors.lastname: Dannefaer
authors.forename: G
authors.initials: G
authors.lastname: Suppes
authors.forename: V
authors.initials: V
authors.lastname: Avalos