title: Self-assembly of conductive Cu nanowires on Si(111)'5 × 5 '-Cu surface.
abstract: Upon room-temperature deposition onto a Cu/Si(111)'5 × 5' surface in ultra-high vacuum, Cu atoms migrate over extended distances to become trapped at the step edges, where they form Cu nanowires (NWs). The formed NWs are 20-80 nm wide, 1-3 nm high and characterized by a resistivity of ∼8 µΩ cm. The surface conductance of the NW array is anisotropic, with the conductivity along the NWs being about three times greater than that in the perpendicular direction. Using a similar growth technique, not only the straight NWs but also other types of NW-based structures (e.g. nanorings) can be fabricated.
authors.affiliation: Institute of Automation and Control Processes, 690041 Vladivostok, Russia.
authors.forename: Dmitry A
authors.initials: DA
authors.lastname: Tsukanov
authors.forename: Maria V
authors.initials: MV
authors.lastname: Ryzhkova
authors.forename: Dimitry V
authors.initials: DV
authors.lastname: Gruznev
authors.forename: Oleg A
authors.initials: OA
authors.lastname: Utas
authors.forename: Vasily G
authors.initials: VG
authors.lastname: Kotlyar
authors.forename: Andrey V
authors.initials: AV
authors.lastname: Zotov
authors.forename: Alexander A
authors.initials: AA
authors.lastname: Saranin