title: Graphene transistors via in situ voltage-induced reduction of graphene-oxide under ambient conditions.
abstract: Here, we describe a simple approach to fabricate graphene-based field-effect-transistors (FETs), starting from aqueous solutions of graphene-oxide (GO), processed entirely under ambient conditions. The process relies on the site-selective reduction of GO sheets deposited in between or on the surface of micro/nanoelectrodes. The same electrodes are first used for voltage-induced electrochemical GO reduction, and then as the source and drain contacts of FETs, allowing for the straightforward production and characterization of ambipolar graphene devices. With the use of nanoelectrodes, we could reduce different selected areas belonging to one single sheet as well.
authors.affiliation: Nanochemistry Laboratory, ISIS-CNRS 7006, Université de Strasbourg, 8 allée Gaspard Monge, 67000 Strasbourg, France.
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Mativetsky
authors.forename: Andrea
authors.initials: A
authors.lastname: Liscio
authors.forename: Emanuele
authors.initials: E
authors.lastname: Treossi
authors.forename: Emanuele
authors.initials: E
authors.lastname: Orgiu
authors.forename: Alberto
authors.initials: A
authors.lastname: Zanelli
authors.forename: Paolo
authors.initials: P
authors.lastname: Samorì
authors.forename: Vincenzo
authors.initials: V
authors.lastname: Palermo