title: Vertically standing Ge nanowires on GaAs(110) substrates.
abstract: The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380 °C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.
authors.affiliation: Department of Physics, Dong-A University, Hadan-2-dong, Sahagu, Busan 604-714, Korea.
authors.forename: Man Suk
authors.initials: MS
authors.lastname: Song
authors.forename: Jae Hun
authors.initials: JH
authors.lastname: Jung
authors.forename: Yong
authors.initials: Y
authors.lastname: Kim
authors.forename: Y
authors.initials: Y
authors.lastname: Wang
authors.forename: J
authors.initials: J
authors.lastname: Zou
authors.forename: H J
authors.initials: HJ
authors.lastname: Joyce
authors.forename: Q
authors.initials: Q
authors.lastname: Gao
authors.forename: H H
authors.initials: HH
authors.lastname: Tan
authors.forename: C
authors.initials: C
authors.lastname: Jagadish