title: A plasmonic terahertz detector with a monolithic hot electron bolometer.
abstract: A plasmonic terahertz detector that integrates a voltage-controlled planar barrier into a grating gated GaAs/AlGaAs high electron mobility transistor has been fabricated and experimentally characterized. The plasmonic response at fixed grating gate voltage has a full width at half-maximum of 40 GHz at ∼405 GHz. Substantially increased responsivity is achieved by introducing an independently biased narrow gate that produces a lateral potential barrier electrically in series with the resonant grating gated region. DC electrical characterization in conjunction with bias-dependent terahertz responsivity and time constant measurements indicate that a hot electron bolometric effect is the dominant response mechanism at 20 K.
authors.affiliation: Physics Department, University of California-Santa Barbara, Santa Barbara, CA 93106, USA.
authors.forename: G C
authors.initials: GC
authors.lastname: Dyer
authors.forename: J D
authors.initials: JD
authors.lastname: Crossno
authors.forename: G R
authors.initials: GR
authors.lastname: Aizin
authors.forename: E A
authors.initials: EA
authors.lastname: Shaner
authors.forename: M C
authors.initials: MC
authors.lastname: Wanke
authors.forename: J L
authors.initials: JL
authors.lastname: Reno
authors.forename: S J
authors.initials: SJ
authors.lastname: Allen