title: Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode.
abstract: A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline tungsten trioxide heating layer promotes the temperature rise in the Ge(2)Sb(2)Te(5) layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. Theoretical thermal simulation and calculation for the reset process are applied to understand the thermal effect of the tungsten trioxide heating layer/electrode. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline tungsten trioxide material.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
authors.forename: Feng
authors.initials: F
authors.lastname: Rao
authors.forename: Zhitang
authors.initials: Z
authors.lastname: Song
authors.forename: Yuefeng
authors.initials: Y
authors.lastname: Gong
authors.forename: Liangcai
authors.initials: L
authors.lastname: Wu
authors.forename: Songlin
authors.initials: S
authors.lastname: Feng
authors.forename: Bomy
authors.initials: B
authors.lastname: Chen