title: Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots.
abstract: In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 × 10(10)-10(14) ions cm(-2)) and subsequent thermal annealing. The energy shift of the main QD emission band is found to increase with increasing implantation dose. Our measurements show clear evidence of an inhomogeneous In/Ga intermixing at low proton implantation doses (≤5 × 10(11) ions cm(-2)), giving rise to the coexistence of intermixed and non-intermixed QDs. For higher implantation doses, a decrease of both the PL linewidth and the intersublevel spacing energy have been found to occur, suggesting that the dot-size, dot-composition and dot-strain distributions evolve towards more uniform ones.
authors.affiliation: Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences, Avenue de l'environnement, 5019 Monastir, Tunisia.
authors.forename: Z
authors.initials: Z
authors.lastname: Zaâboub
authors.forename: B
authors.initials: B
authors.lastname: Ilahi
authors.forename: L
authors.initials: L
authors.lastname: Sfaxi
authors.forename: H
authors.initials: H
authors.lastname: Maaref
authors.forename: B
authors.initials: B
authors.lastname: Salem
authors.forename: V
authors.initials: V
authors.lastname: Aimez
authors.forename: D
authors.initials: D
authors.lastname: Morris