title: Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system.
abstract: We present a multi-segment photonic crystal coupled cavity laser device on GaSb with a microstructured internal photodiode. This monolithically integrated power monitor is added as a third segment to a coupled cavity laser and is separated from the active device by six rows of two-dimensional photonic crystals, acting as highly reflecting mirrors. There is no additional fabrication step needed to integrate this feature into the coupled cavity laser, resulting in a highly integrated laser device of only 800 µm length. The device with lasing wavelength around 1955 nm shows single mode emission over a tuning range of as large as 16 nm and exhibits output powers of up to 9 mW.
authors.affiliation: Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Müller
authors.forename: A
authors.initials: A
authors.lastname: Bauer
authors.forename: T
authors.initials: T
authors.lastname: Lehnhardt
authors.forename: A
authors.initials: A
authors.lastname: Forchel