title: Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer.
abstract: A self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. Pt NPs with a narrow size distribution (diameter ∼4 nm) were synthesized via an alcohol reduction method. The monolayer of these Pt NPs was immobilized on a SiO(2) substrate using poly(4-vinylpyridine) (P4VP) as a surface modifier. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window of 5.8 V under ± 7 V for program/erase voltage. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices.
authors.affiliation: Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #261, Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Korea.
authors.forename: Hyejung
authors.initials: H
authors.lastname: Choi
authors.forename: Byung-Sang
authors.initials: BS
authors.lastname: Choi
authors.forename: Tae-Wook
authors.initials: TW
authors.lastname: Kim
authors.forename: Seung-Jae
authors.initials: SJ
authors.lastname: Jung
authors.forename: Man
authors.initials: M
authors.lastname: Chang
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang