title: Device fabrication with solid-liquid-solid grown silicon nanowires.
abstract: High quality, single-crystal silicon nanowires were successfully grown from silicon wafers with a nickel catalyst by utilizing a solid-liquid-solid (SLS) mechanism. The nanowires were composed of a crystalline silicon core with an average diameter of 10 nm and a thick outer oxide layer of between 20 and 30 nm at a growth temperature of 1000 °C. When utilizing the SLS growth mechanism, the diameter of the silicon nanowire is dependent solely upon the growth temperature, and has no relation to either the size or the shape of the catalyst. The characteristics of the silicon nanowires are highly dependent upon the properties of the silicon substrate, such as the crystal phase of silicon itself, as well as the doping type. The possibility of doping of silicon nanowires grown via the SLS mechanism without any external dopant source was demonstrated by measuring the electrical properties of a silicon nanowire field effect transistor.
authors.affiliation: Display Device and Processing Lab, Samsung Advanced Institute of Technology, Youngin, Kyunggi-Do, 449-712, Korea.
authors.forename: Eun Kyung
authors.initials: EK
authors.lastname: Lee
authors.forename: Byoung Lyong
authors.initials: BL
authors.lastname: Choi
authors.forename: Yong Dae
authors.initials: YD
authors.lastname: Park
authors.forename: Young
authors.initials: Y
authors.lastname: Kuk
authors.forename: Sun Young
authors.initials: SY
authors.lastname: Kwon
authors.forename: Hyeong Joon
authors.initials: HJ
authors.lastname: Kim