title: Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy.
abstract: In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Γ point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Γ(7) symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K.
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Bernt
authors.initials: B
authors.lastname: Ketterer
authors.forename: Martin
authors.initials: M
authors.lastname: Heiss
authors.forename: Emanuele
authors.initials: E
authors.lastname: Uccelli
authors.forename: Jordi
authors.initials: J
authors.lastname: Arbiol
authors.forename: Anna Fontcuberta
authors.initials: AF
authors.lastname: i Morral