title: P-doped diamond grown on (110)-textured microcrystalline diamond: growth, characterization and devices.
abstract: The formation and properties of (110)-textured P-doped microcrystalline CVD diamond were studied. Based on several microscopy techniques, with a special emphasis on electron backscattered diffraction, a detailed determination of the grain orientations with respect to the exact [110] axis is given. The different orientations present in the film, in combination with low phosphine concentrations in the gas phase, lead to a variation in P incorporation that can vary over three orders of magnitude, as determined with cathodoluminescence mapping. The role of the surface morphology in the observation of these large incorporation differences is explained. Hall measurements confirm that the films are n-type conductive with a thermal activation energy of 0.56 eV. Based on B-doped substrates, pn junctions were created, showing a rectification ratio of nearly 10(4) at ± 25 V.
authors.affiliation: Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium. Division IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
authors.forename: Ken
authors.initials: K
authors.lastname: Haenen
authors.forename: Andrada
authors.initials: A
authors.lastname: Lazea
authors.forename: Julien
authors.initials: J
authors.lastname: Barjon
authors.forename: Jan
authors.initials: J
authors.lastname: D'Haen
authors.forename: Nada
authors.initials: N
authors.lastname: Habka
authors.forename: Tokuyuki
authors.initials: T
authors.lastname: Teraji
authors.forename: Satoshi
authors.initials: S
authors.lastname: Koizumi
authors.forename: Vincent
authors.initials: V
authors.lastname: Mortet