title: Self-aligned coupled nanowire transistor.
abstract: The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.
authors.affiliation: Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: Tero S
authors.initials: TS
authors.lastname: Kulmala
authors.forename: Alan
authors.initials: A
authors.lastname: Colli
authors.forename: Andrea
authors.initials: A
authors.lastname: Fasoli
authors.forename: Antonio
authors.initials: A
authors.lastname: Lombardo
authors.forename: Samiul
authors.initials: S
authors.lastname: Haque
authors.forename: Andrea C
authors.initials: AC
authors.lastname: Ferrari