title: In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films.
abstract: Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 °C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications.
authors.forename: P
authors.initials: P
authors.lastname: Yan
authors.forename: D
authors.initials: D
authors.lastname: Qin
authors.forename: Y K
authors.initials: YK
authors.lastname: An
authors.forename: G Z
authors.initials: GZ
authors.lastname: Li
authors.forename: J
authors.initials: J
authors.lastname: Xing
authors.forename: J J
authors.initials: JJ
authors.lastname: Liu