title: A direct metal transfer method for cross-bar type polymer non-volatile memory applications.
abstract: Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 µm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.
authors.affiliation: Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
authors.forename: Tae-Wook
authors.initials: TW
authors.lastname: Kim
authors.forename: Kyeongmi
authors.initials: K
authors.lastname: Lee
authors.forename: Seung-Hwan
authors.initials: SH
authors.lastname: Oh
authors.forename: Gunuk
authors.initials: G
authors.lastname: Wang
authors.forename: Dong-Yu
authors.initials: DY
authors.lastname: Kim
authors.forename: Gun-Young
authors.initials: GY
authors.lastname: Jung
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee