title: Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments.
abstract: Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
authors.affiliation: Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA. Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA.
authors.forename: A
authors.initials: A
authors.lastname: Sokolov
authors.forename: R
authors.initials: R
authors.lastname: Sabirianov
authors.forename: I
authors.initials: I
authors.lastname: Sabirianov
authors.forename: B
authors.initials: B
authors.lastname: Doudin