title: Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
authors.affiliation: Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan. hsiaowen@mail.nctu.edu.tw
authors.forename: Hsiao-Wen
authors.initials: HW
authors.lastname: Zan
authors.forename: Wu-Wei
authors.initials: WW
authors.lastname: Tsai
authors.forename: Chia-Hsin
authors.initials: CH
authors.lastname: Chen
authors.forename: Chuang-Chuang
authors.initials: CC
authors.lastname: Tsai
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D011137:Polystyrenes / Q000737:chemistry; D057233:Radio Frequency Identification Device / Q000379:methods; D014173:Transistors, Electronic; D017967:Zinc Compounds / Q000737:chemistry*
chemical_list: D010087:Oxides; D011137:Polystyrenes; D017967:Zinc Compounds; D007204:Indium; D005708:Gallium