title: Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns.
abstract: An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.
authors.affiliation: CEA DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif sur Yvette, France.
authors.forename: N
authors.initials: N
authors.lastname: Barrett
authors.forename: L F
authors.initials: LF
authors.lastname: Zagonel
authors.forename: O
authors.initials: O
authors.lastname: Renault
authors.forename: A
authors.initials: A
authors.lastname: Bailly