title: Electron spin control in dilute nitride semiconductors.
abstract: We report on a study of spin-dependent recombination processes (SDR) for conduction band electrons on deep paramagnetic centers in a series of GaAs(1-y)N(y) epilayers by time-resolved optical orientation experiments. We demonstrate that this dilute nitride compound can be used as an effective electron spin filter under a polarized optical excitation of appropriate intensity. This optimum intensity can moreover be controlled by adjusting the nitrogen composition in the layer.
authors.affiliation: Université de Toulouse, INSA, UPS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse, France. CNRS, LPCNO, F-31077 Toulouse, France.
authors.forename: F
authors.initials: F
authors.lastname: Zhao
authors.forename: A
authors.initials: A
authors.lastname: Balocchi
authors.forename: G
authors.initials: G
authors.lastname: Truong
authors.forename: T
authors.initials: T
authors.lastname: Amand
authors.forename: X
authors.initials: X
authors.lastname: Marie
authors.forename: X J
authors.initials: XJ
authors.lastname: Wang
authors.forename: I A
authors.initials: IA
authors.lastname: Buyanova
authors.forename: W M
authors.initials: WM
authors.lastname: Chen
authors.forename: J C
authors.initials: JC
authors.lastname: Harmand