title: Manipulating feature sizes in Si-based grating structures by thermal oxidation.
abstract: We report a method for manipulating feature sizes in Si-based grating structures by thermal oxidation, which allows the realization of fin width/period ratios not directly accessible by laser interference lithography. Taking advantage of the expansion in volume associated with the thermal oxidation of Si, grating structures with very high fin width/period ratios of the order of 0.96 were obtained, whereas subsequent chemical etching of the oxide yields grating structures with fin width/period ratios as small as ∼0.06.
authors.affiliation: National Key Lab of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.forename: Ran
authors.initials: R
authors.lastname: Ji
authors.forename: Ning
authors.initials: N
authors.lastname: Dai
authors.forename: Roland
authors.initials: R
authors.lastname: Scholz
authors.forename: Martin
authors.initials: M
authors.lastname: Steinhart
authors.forename: Kornelius
authors.initials: K
authors.lastname: Nielsch
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele