title: Emitting a-SiO(x)(Er) films and a-SiO(x)(Er)/a-Si:H microcavities doped with Er by remote magnetron sputtering technique.
abstract: We have developed the technique of growing amorphous a-SiO(x)(Er) films and a-SiO(x)(Er)/a-Si:H multilayer structures based on spatially separating the processes of the decomposition of an oxygen-silane gas mixture in an rf glow discharge plasma and remote magnetron sputtering of an Er target. This approach allows us to control independently the film deposition rate, the Er-ion concentration and its depth distribution in the film. Time-resolved photoluminescence measurements have shown that films and planar microcavities with an Er-doped active layer exhibit internal quantum efficiency for Er ion emission of ∼75%. The method that we suggest is a way of producing effectively emitting microcavity structures, in which the distribution profile of emission centers coincides with that of the electromagnetic field in individual layers of the structure.
authors.affiliation: Ioffe Physico-Technical Institute, RAS, St Petersburg, 194021, Russia.
authors.forename: A V
authors.initials: AV
authors.lastname: Medvedev
authors.forename: A B
authors.initials: AB
authors.lastname: Pevtsov
authors.forename: S A
authors.initials: SA
authors.lastname: Grudinkin
authors.forename: N A
authors.initials: NA
authors.lastname: Feoktistov
authors.forename: V A
authors.initials: VA
authors.lastname: Sakharov
authors.forename: I T
authors.initials: IT
authors.lastname: Serenkov
authors.forename: V G
authors.initials: VG
authors.lastname: Golubev