title: Site-selected doping in silicon nanowires by an external electric field.
abstract: The properties of dopant-related defects in silicon nanowires are key characteristics in semiconductive devices. Our first-principles calculations predicted that the preferred doping sites of B and P atoms in hydrogen-passivated silicon nanowires have opposite distribution behavior under electric field, suggesting a steady intrinsic p-n junction can be spontaneously formed in (B and P) codoped silicon nanowires.
authors.affiliation: School of Science, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
authors.forename: Fang
authors.initials: F
authors.lastname: Wu
authors.forename: Erjun
authors.initials: E
authors.lastname: Kan
authors.forename: Xiaojun
authors.initials: X
authors.lastname: Wu
mesh_terms: D004560:Electricity; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon