title: Controlled synthesis of InAs wires, dot and twin-dot array configurations by cleaved edge overgrowth.
abstract: We present experimental results on the controlled synthesis of InAs ordered nanostructures with three different grades of complexity: nanowires, quantum dot arrays, and double quantum dot arrays. A model for the diffusion of In adatoms on (110) surfaces explains the observed ordering and establishes general criteria for the optimized fabrication of the three different InAs nanostructure configurations, as a function of the growth conditions. These results are important for the use of ordered InAs nanostructures in future optoelectronic applications.
authors.affiliation: Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany.
authors.forename: Emanuele
authors.initials: E
authors.lastname: Uccelli
authors.forename: Max
authors.initials: M
authors.lastname: Bichler
authors.forename: Simon
authors.initials: S
authors.lastname: Nürnberger
authors.forename: Gerhard
authors.initials: G
authors.lastname: Abstreiter
authors.forename: Anna Fontcuberta
authors.initials: AF
authors.lastname: I Morral