title: ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides.
abstract: The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.
authors.affiliation: Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.
authors.forename: Donghyuk
authors.initials: D
authors.lastname: Yeom
authors.forename: Jeongmin
authors.initials: J
authors.lastname: Kang
authors.forename: Myoungwon
authors.initials: M
authors.lastname: Lee
authors.forename: Jaewon
authors.initials: J
authors.lastname: Jang
authors.forename: Junggwon
authors.initials: J
authors.lastname: Yun
authors.forename: Dong-Young
authors.initials: DY
authors.lastname: Jeong
authors.forename: Changjoon
authors.initials: C
authors.lastname: Yoon
authors.forename: Jamin
authors.initials: J
authors.lastname: Koo
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim