title: NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.
abstract: Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I(on)/I(off) ratios were as high as ∼10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.
authors.affiliation: Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.
authors.forename: Donghyuk
authors.initials: D
authors.lastname: Yeom
authors.forename: Kihyun
authors.initials: K
authors.lastname: Keem
authors.forename: Jeongmin
authors.initials: J
authors.lastname: Kang
authors.forename: Dong-Young
authors.initials: DY
authors.lastname: Jeong
authors.forename: Changjoon
authors.initials: C
authors.lastname: Yoon
authors.forename: Dongseung
authors.initials: D
authors.lastname: Kim
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim