title: Preparing arrays of large atomically flat regions on single crystal substrates.
abstract: We report a simple and general procedure to create arrays of atomically flat terraces on single crystal surfaces. Facets of three-dimensional (3D) metal islands formed after hetero-epitaxial growth are often flat and, through annealing or growth at elevated temperature, the formation of rather large (micron-scale) atomically flat-top facets can be promoted. We find that the step-free nature of top facets on such islands can be transferred to the substrate surface through room-temperature ion-sputter etching, followed by an annealing step. We use low-energy electron microscopy (LEEM) and Auger electron spectroscopy (AES) for in situ monitoring of the process steps while fabricating arrays of step-free surface regions on W(110), Ru(0001), Cu(100), and Fe(100) single crystals.
authors.affiliation: Sandia National Laboratories, Livermore, CA 94550, USA. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: F
authors.initials: F
authors.lastname: El Gabaly
authors.forename: N C
authors.initials: NC
authors.lastname: Bartelt
authors.forename: A K
authors.initials: AK
authors.lastname: Schmid