title: Growth of p-type Si nanotubes by catalytic plasma treatments.
abstract: We have demonstrated a new technique to transform bulk materials into one-dimensional nanostructures. We have shown that p-type Si nanotubes (SiNTs) can be grown by a simple dual RF plasma treatment of p-type Si substrates at 500 °C. These SiNTs have diameters of ∼50-80 nm with tubular wall thickness of ∼10-15 nm. The use of Cu vapor and reactive plasma has enabled the growth of these SiNTs instead of Si nanowires.
authors.affiliation: Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
authors.forename: Ming
authors.initials: M
authors.lastname: Xie
authors.forename: Jiesheng
authors.initials: J
authors.lastname: Wang
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Jia G
authors.initials: JG
authors.lastname: Lu
authors.forename: Yoke Khin
authors.initials: YK
authors.lastname: Yap