title: Visualizing individual nitrogen dopants in monolayer graphene.
abstract: In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.
authors.affiliation: Department of Physics, Columbia University, New York, NY 10027, USA.
authors.forename: Liuyan
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authors.lastname: Zhao
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authors.lastname: Schiros
authors.forename: Keun Soo
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authors.forename: Hui
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authors.lastname: Zhou
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authors.lastname: Arguello
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authors.lastname: Pálová
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authors.lastname: Nordlund
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authors.lastname: Pinczuk
authors.forename: George W
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authors.lastname: Flynn
authors.forename: Abhay N
authors.initials: AN
authors.lastname: Pasupathy