title: Magnetic proximity effect as a pathway to spintronic applications of topological insulators.
abstract: Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.
authors.affiliation: Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy. ivana.vobornik@elettra.trieste.it
authors.forename: Ivana
authors.initials: I
authors.lastname: Vobornik
authors.forename: Unnikrishnan
authors.initials: U
authors.lastname: Manju
authors.forename: Jun
authors.initials: J
authors.lastname: Fujii
authors.forename: Francesco
authors.initials: F
authors.lastname: Borgatti
authors.forename: Piero
authors.initials: P
authors.lastname: Torelli
authors.forename: Damjan
authors.initials: D
authors.lastname: Krizmancic
authors.forename: Yew San
authors.initials: YS
authors.lastname: Hor
authors.forename: Robert J
authors.initials: RJ
authors.lastname: Cava
authors.forename: Giancarlo
authors.initials: G
authors.lastname: Panaccione