title: Morphology and temperature dependence of the thermal conductivity of nanoporous SiGe.
abstract: Using molecular dynamics simulations, we show that the thermal conductivity (κ) of Si(0.5)Ge(0.5) can be reduced by more than one order of magnitude by etching nanometer-sized holes in the material, and it becomes almost constant as a function of temperature between 300 and 1100 K for samples with 1 nm wide pores. In nanoporous SiGe, thermal conduction is largely determined by mass disorder and boundary scattering, and thus the dependence of κ on pore distance and on structural, atomistic disorder is much weaker than in the case of nanoporous Si. This indicates that one may minimize κ of the alloy with less stringent morphological constraints than for pure Si.
authors.affiliation: Department of Chemistry, University of California, Davis, California 95616, United States.
authors.forename: Yuping
authors.initials: Y
authors.lastname: He
authors.forename: Davide
authors.initials: D
authors.lastname: Donadio
authors.forename: Giulia
authors.initials: G
authors.lastname: Galli