title: Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.
abstract: A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11 nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of ∼ 40 meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.
authors.affiliation: Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA. ymazur@uark.edu
authors.forename: Yu I
authors.initials: YI
authors.lastname: Mazur
authors.forename: V G
authors.initials: VG
authors.lastname: Dorogan
authors.forename: M
authors.initials: M
authors.lastname: Schmidbauer
authors.forename: G G
authors.initials: GG
authors.lastname: Tarasov
authors.forename: S R
authors.initials: SR
authors.lastname: Johnson
authors.forename: X
authors.initials: X
authors.lastname: Lu
authors.forename: S-Q
authors.initials: SQ
authors.lastname: Yu
authors.forename: Zh M
authors.initials: ZhM
authors.lastname: Wang
authors.forename: T
authors.initials: T
authors.lastname: Tiedje
authors.forename: G J
authors.initials: GJ
authors.lastname: Salamo