title: p-n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film.
abstract: We describe the fabrication and electrical performance of p-n homo-junction diode arrays of horizontally aligned single walled carbon nanotubes (SWCNTs). Horizontally aligned SWCNTs grown on stable temperature-cut quartz with a density of ∼ 6 SWCNTs µm(-1) were transferred onto a SiO(2)/Si substrate. After the electrical breakdown, aligned SWCNT field effect transistors (FETs) showed unipolar p-type characteristics with a large current on/off ratio of 10(6) at 1 V and a hole mobility per tube of 1500 cm(2) V(-1) s(-1). Spin-coating of polyethyleneimine (PEI) onto p-type SWCNT FETs showed the n-type transfer characteristics. Patterning of spin-coated PEI film enabled the fabrication of p-n homo-junction arrays of aligned SWCNTs in an easy way, where the rectifying behavior was observed with a rectification ratio of ∼ 10(4) at ± 2 V. A comparative study with a p-n homo-junction of random networks of SWCNTs confirmed the advantage of aligned SWCNTs for applications in high performance electronic devices.
authors.affiliation: Department of Chemical and Biological Engineering, Korea University, Seoul, Korea.
authors.forename: Jaehyun
authors.initials: J
authors.lastname: Park
authors.forename: Jangyeol
authors.initials: J
authors.lastname: Yoon
authors.forename: Gyu-Tae
authors.initials: GT
authors.lastname: Kim
authors.forename: Jeong Sook
authors.initials: JS
authors.lastname: Ha
mesh_terms: D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry / Q000648:ultrastructure*; D011094:Polyethyleneimine / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon; D011094:Polyethyleneimine