title: Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.
abstract: High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.
authors.forename: Chipta
authors.initials: C
authors.lastname: Laksana
authors.forename: Meei-Ru
authors.initials: MR
authors.lastname: Chen
authors.forename: Yen
authors.initials: Y
authors.lastname: Liang
authors.forename: An-Jyeg
authors.initials: AJ
authors.lastname: Tzou
authors.forename: Hui-Ling
authors.initials: HL
authors.lastname: Kao
authors.forename: Erik
authors.initials: E
authors.lastname: Jeng
authors.forename: Jyh
authors.initials: J
authors.lastname: Chen
authors.forename: Hou-Guang
authors.initials: HG
authors.lastname: Chen
authors.forename: Sheng-Rui
authors.initials: SR
authors.lastname: Jian