title: Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source.
abstract: We demonstrated a novel method to obtain charge neutral quasi-free-standing graphene on SiC (0001) from the buffer layer using fluorine from a molecular source, fluorinated fullerene (C(60)F(48)). The intercalated product is stable under ambient conditions and resistant to elevated temperatures of up to 1200 °C. Scanning tunneling microscopy and spectroscopy measurements are performed for the first time on such quasi-free-standing graphene to elucidate changes in the electronic and structural properties of both the graphene and interfacial layer. Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated. Photoemission spectroscopy is used to confirm these electronic and structural changes.
authors.affiliation: NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive S117456, Singapore.
authors.forename: Swee Liang
authors.initials: SL
authors.lastname: Wong
authors.forename: Han
authors.initials: H
authors.lastname: Huang
authors.forename: Yuzhan
authors.initials: Y
authors.lastname: Wang
authors.forename: Liang
authors.initials: L
authors.lastname: Cao
authors.forename: Dongchen
authors.initials: D
authors.lastname: Qi
authors.forename: Iman
authors.initials: I
authors.lastname: Santoso
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.forename: Andrew Thye Shen
authors.initials: AT
authors.lastname: Wee