title: Nanopatterning of fluorinated graphene by electron beam irradiation.
abstract: We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 TΩ to 100 kΩ), whereas nanostructures show a transport gap in the source-drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.
authors.affiliation: Centre for Graphene Science, CEMPS, University of Exeter, Exeter, EX4 4QL, U.K.
authors.forename: Freddie
authors.initials: F
authors.lastname: Withers
authors.forename: Thomas H
authors.initials: TH
authors.lastname: Bointon
authors.forename: Marc
authors.initials: M
authors.lastname: Dubois
authors.forename: Saverio
authors.initials: S
authors.lastname: Russo
authors.forename: Monica F
authors.initials: MF
authors.lastname: Craciun