title: Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
abstract: Resistive-switching memory (RRAM) is an emerging nanoscale device based on the localized metal-insulator transition within a few-nanometer-sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm(-2) , bottom-up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core-shell Ni-NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal-insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high-density, low-cost crossbar memory with long-term storage stability.
authors.affiliation: Dipartimento di Elettronica e Informazione, Politecnico di Milano Piazza L. da Vinci 32, Milan, Italy.
authors.forename: Carlo
authors.initials: C
authors.lastname: Cagli
authors.forename: Federico
authors.initials: F
authors.lastname: Nardi
authors.forename: Bruce
authors.initials: B
authors.lastname: Harteneck
authors.forename: Zhongkui
authors.initials: Z
authors.lastname: Tan
authors.forename: Yuegang
authors.initials: Y
authors.lastname: Zhang
authors.forename: Daniele
authors.initials: D
authors.lastname: Ielmini
mesh_terms: D004581:Electronics / Q000295:instrumentation* / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D009532:Nickel / Q000737:chemistry*
chemical_list: D009532:Nickel; C028007:nickel monoxide