title: Efficient spin injector scheme based on Heusler materials.
abstract: We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.
authors.affiliation: Institut für Anorganische und Analytische Chemie, Johannes Gutenberg-Universtität, 55099 Mainz, Germany. chadov@uni-mainz.de
authors.forename: Stanislav
authors.initials: S
authors.lastname: Chadov
authors.forename: Tanja
authors.initials: T
authors.lastname: Graf
authors.forename: Kristina
authors.initials: K
authors.lastname: Chadova
authors.forename: Xuefang
authors.initials: X
authors.lastname: Dai
authors.forename: Frederick
authors.initials: F
authors.lastname: Casper
authors.forename: Gerhard H
authors.initials: GH
authors.lastname: Fecher
authors.forename: Claudia
authors.initials: C
authors.lastname: Felser