title: Dynamically stabilized growth of polar oxides: the case of MgO(111).
abstract: By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).
authors.affiliation: Department of Physics, University of York, York YO10 5DD, United Kingdom. vlado.lazarov@york.ac.uk
authors.forename: Vlado K
authors.initials: VK
authors.lastname: Lazarov
authors.forename: Zhuhua
authors.initials: Z
authors.lastname: Cai
authors.forename: Kenta
authors.initials: K
authors.lastname: Yoshida
authors.forename: K Honglian L
authors.initials: KH
authors.lastname: Zhang
authors.forename: M
authors.initials: M
authors.lastname: Weinert
authors.forename: Katherine S
authors.initials: KS
authors.lastname: Ziemer
authors.forename: Philip J
authors.initials: PJ
authors.lastname: Hasnip