title: Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers.
abstract: The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.
authors: Department of Physics, National Changhua University of Education, Changhua, Taiwan.
authors: Jih-Yuan
authors: JY
authors: Chang
authors: Bo-Ting
authors: BT
authors: Liou
authors: Han-Wei
authors: HW
authors: Lin
authors: Ya-Hsuan
authors: YH
authors: Shih
authors: Shu-Hsuan
authors: SH
authors: Chang
authors: Yen-Kuang
authors: YK
authors: Kuo