title: Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors.
abstract: The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.
authors: Istituto per la Sintesi Organica e la Fotoreattività (ISOF), Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy. mmelucci@isof.cnr.it
authors: Manuela
authors: M
authors: Melucci
authors: Massimo
authors: M
authors: Zambianchi
authors: Laura
authors: L
authors: Favaretto
authors: Massimo
authors: M
authors: Gazzano
authors: Alberto
authors: A
authors: Zanelli
authors: Magda
authors: M
authors: Monari
authors: Raffaella
authors: R
authors: Capelli
authors: Stefano
authors: S
authors: Troisi
authors: Stefano
authors: S
authors: Toffanin
authors: Michele
authors: M
authors: Muccini