title: Room temperature ultralow threshold GaN nanowire polariton laser.
abstract: We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing.
authors: Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, USA.
authors: Ayan
authors: A
authors: Das
authors: Junseok
authors: J
authors: Heo
authors: Marc
authors: M
authors: Jankowski
authors: Wei
authors: W
authors: Guo
authors: Lei
authors: L
authors: Zhang
authors: Hui
authors: H
authors: Deng
authors: Pallab
authors: P
authors: Bhattacharya