title: Electronic versus lattice match for metal-semiconductor epitaxial growth: Pb on Ge(111).
abstract: Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a √3 × √3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1 × 1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with superimposed bilayer oscillations.
authors: Department of Physics, National Tsing Hua University, Hsinchu, Taiwan. sjtang@phys.nthu.edu.tw
authors: S-J
authors: SJ
authors: Tang
authors: Chang-Yeh
authors: CY
authors: Lee
authors: Chien-Chung
authors: CC
authors: Huang
authors: Tay-Rong
authors: TR
authors: Chang
authors: Cheng-Maw
authors: CM
authors: Cheng
authors: Ku-Ding
authors: KD
authors: Tsuei
authors: H-T
authors: HT
authors: Jeng
authors: V
authors: V
authors: Yeh
authors: Tai-Chang
authors: TC
authors: Chiang