title: Neon Ion Beam Lithography (NIBL).
abstract: Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
authors: Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
authors: Donald
authors: D
authors: Winston
authors: Vitor R
authors: VR
authors: Manfrinato
authors: Samuel M
authors: SM
authors: Nicaise
authors: Lin Lee
authors: LL
authors: Cheong
authors: Huigao
authors: H
authors: Duan
authors: David
authors: D
authors: Ferranti
authors: Jeff
authors: J
authors: Marshman
authors: Shawn
authors: S
authors: McVey
authors: Lewis
authors: L
authors: Stern
authors: John
authors: J
authors: Notte
authors: Karl K
authors: KK
authors: Berggren