title: Band gap engineering of bulk ZrO2 by Ti doping.
abstract: It has been experimentally observed that Ti doping of bulk ZrO(2) induces a large red-shift of the optical absorption edge of the material from 5.3 to 4.0 eV [Livraghi et al., J. Phys. Chem. C, 2010, 114, 18553-18558]. In this work, density functional calculations based on the hybrid functional B3LYP show that Ti dopants in the substitutional position to Zr in the tetragonal lattice cause the formation of an empty Ti 3d band about 0.5 eV below the bottom of the conduction band. The optical transition level ε(opt)(0/-1) from the topmost valence state to the lowest empty Ti impurity state is found at 4.9 eV in a direct band gap of 5.7 eV. The calculated shift is consistent with the experimental observation. The presence of Ti(3+) species in Ti-doped ZrO(2), probed by means of electron paramagnetic resonance (EPR), is rationalized as the result of electron transfers from intrinsic defect states, such as oxygen vacancies, to substitutional Ti(4+) centers.
authors: Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 53, 20125 Milano, Italy.
authors: Federico
authors: F
authors: Gallino
authors: Cristiana
authors: C
authors: Di Valentin
authors: Gianfranco
authors: G
authors: Pacchioni