title: Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator.
abstract: Adsorption of tetracyanoethylene (TCNE) onto hydrogen terminated, n-type silicon-on-insulator is shown to cause significant depletion of majority carriers. Employing an ambient pseudo-MOSFET, ppm levels of TCNE vapour rapidly decrease the n-channel saturation current by at least two orders of magnitude. Covalent passivation with a decyl monolayer improves the reversibility of the response while only slightly decreasing the sensitivity.
authors: Steacie Institute for Molecular Sciences, NRC-SIMS, 100 Sussex Dr., ON K1A 0R6, Ottawa, Canada.
authors: Girjesh
authors: G
authors: Dubey
authors: Federico
authors: F
authors: Rosei
authors: Gregory P
authors: GP
authors: Lopinski