title: Transfer-free growth of few-layer graphene by self-assembled monolayers.
authors: Graphene Center, Samsung Advanced Institute of Technology, Yongin, Gyeonggi, Republic of Korea.
authors: Hyeon-Jin
authors: HJ
authors: Shin
authors: Won Mook
authors: WM
authors: Choi
authors: Seon-Mi
authors: SM
authors: Yoon
authors: Gang Hee
authors: GH
authors: Han
authors: Yun Sung
authors: YS
authors: Woo
authors: Eun Sung
authors: ES
authors: Kim
authors: Seung Jin
authors: SJ
authors: Chae
authors: Xiang-Shu
authors: XS
authors: Li
authors: Anass
authors: A
authors: Benayad
authors: Duong Dinh
authors: DD
authors: Loc
authors: Fethullah
authors: F
authors: Gunes
authors: Young Hee
authors: YH
authors: Lee
authors: Jae-Young
authors: JY
authors: Choi
mesh_terms: D002384:Catalysis; D004579:Electron Transport; D006046:Gold / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D006358:Hot Temperature; D046529:Microscopy, Electron, Transmission; D036103:Nanotechnology / Q000379:methods*; D009532:Nickel / Q000737:chemistry; D009942:Organometallic Compounds / Q000737:chemistry*; D012821:Silanes / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013499:Surface Properties; D014961:X-Ray Diffraction
chemical_list: D009942:Organometallic Compounds; D012821:Silanes; D006046:Gold; D012822:Silicon Dioxide; D006108:Graphite; D009532:Nickel; C034268:octylsilane