title: High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.
abstract: We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
authors: Solid State Physics and ‡Department of Electrical- and Information Technology, Lund University , Box 118, S-221 00, Lund, Sweden.
authors: Bahram
authors: B
authors: Ganjipour
authors: Anil W
authors: AW
authors: Dey
authors: B Mattias
authors: BM
authors: Borg
authors: Martin
authors: M
authors: Ek
authors: Mats-Erik
authors: ME
authors: Pistol
authors: Kimberly A
authors: KA
authors: Dick
authors: Lars-Erik
authors: LE
authors: Wernersson
authors: Claes
authors: C
authors: Thelander