title: An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.
abstract: The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.
authors: Institute of Physical Engineering, Brno University of Technology, Brno, Czech Republic. mach@fme.vutbr.cz
authors: Jindrich
authors: J
authors: Mach
authors: Tomás
authors: T
authors: Samoril
authors: Stanislav
authors: S
authors: Voborný
authors: Miroslav
authors: M
authors: Kolíbal
authors: Jakub
authors: J
authors: Zlámal
authors: Jirí
authors: J
authors: Spousta
authors: Libuse
authors: L
authors: Dittrichová
authors: Tomás
authors: T
authors: Sikola