title: Doped graphene: the interplay between localization and frustration due to the underlying triangular symmetry.
abstract: An intuitive explanation of the increase in localization observed near the Dirac point in doped graphene is presented. To do this, we renormalize the tight binding Hamiltonians in such a way that the honeycomb lattice maps into a triangular one. Then, we investigate the frustration effects that emerge in this Hamiltonian. In this doped triangular lattice, the eigenstates have a bonding and antibonding contribution near the Dirac point, and thus there is a kind of Lifshitz tail. The increase in frustration is related to an increase in localization, since the number of frustrated bonds decreases with disorder, while the frustration contribution raises.
authors: Departamento de Física-Química, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), México DF, México.
authors: J E
authors: JE
authors: Barrios-Vargas
authors: Gerardo G
authors: GG
authors: Naumis
mesh_terms: D003198:Computer Simulation; D006108:Graphite / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry*
chemical_list: D006108:Graphite