title: Piezoresistance of top-down suspended Si nanowires.
abstract: Measurements of the gauge factor of suspended, top-down silicon nanowires are presented. The nanowires are fabricated with a CMOS compatible process and with doping concentrations ranging from 2 × 10(20) down to 5 × 10(17) cm(-3). The extracted gauge factors are compared with results on identical non-suspended nanowires and with state-of-the-art results. An increase of the gauge factor after suspension is demonstrated. For the low doped nanowires a value of 235 is measured. Particular attention was paid throughout the experiments to distinguishing real resistance change due to strain modulation from resistance fluctuations due to charge trapping. Furthermore, a numerical model correlating surface charge density with the gauge factor is presented. Comparison of the simulations with experimental measurements shows the validity of this approach. These results contribute to a deeper understanding of the piezoresistive effect in Si nanowires.
authors: CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
authors: A
authors: A
authors: Koumela
authors: D
authors: D
authors: Mercier
authors: C
authors: C
authors: Dupré
authors: G
authors: G
authors: Jourdan
authors: C
authors: C
authors: Marcoux
authors: E
authors: E
authors: Ollier
authors: S T
authors: ST
authors: Purcell
authors: L
authors: L
authors: Duraffourg