title: Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors.
abstract: Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.
authors: Cavendish Laboratory, University of Cambridge, United Kingdom.
authors: Jui-Fen
authors: JF
authors: Chang
authors: Tomo
authors: T
authors: Sakanoue
authors: Yoann
authors: Y
authors: Olivier
authors: Takafumi
authors: T
authors: Uemura
authors: Marie-Beatrice
authors: MB
authors: Dufourg-Madec
authors: Stephen G
authors: SG
authors: Yeates
authors: Jérôme
authors: J
authors: Cornil
authors: Jun
authors: J
authors: Takeya
authors: Alessandro
authors: A
authors: Troisi
authors: Henning
authors: H
authors: Sirringhaus