title: Ultra-fast vapour-liquid-solid synthesis of Si nanowires using ion-beam implanted gallium as catalyst.
abstract: The feasibility of gallium as a catalyst for vapour-liquid-solid (VLS) nanowire (NW) growth deriving from an implantation process in silicon by a focused ion beam (FIB) is investigated. Si(100) substrates are subjected to FIB implantation of gallium ions with various ion fluence rates. NW growth is performed in a hot wall chemical vapour deposition (CVD) reactor at temperatures between 400 and 500 °C with 2% SiH(4)/He as precursor gas. This process results in ultra-fast growth of (112)- and (110)-oriented Si-NWs with a length of several tens of micrometres. Further investigation by transmission electron microscopy indicates the presence of a NW core-shell structure: while the NW core yields crystalline structuring, the shell consists entirely of amorphous material.
authors: Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria.
authors: Martin
authors: M
authors: Hetzel
authors: Alois
authors: A
authors: Lugstein
authors: Clemens
authors: C
authors: Zeiner
authors: Tomasz
authors: T
authors: Wójcik
authors: Peter
authors: P
authors: Pongratz
authors: Emmerich
authors: E
authors: Bertagnolli