title: Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics.
abstract: A simple method of E(g)(T) dependence determination for active areas of semiconductor devices based on wide bandgap semiconductors has been proposed and developed. Verification of the method has been carried out while determining E(g)(T) dependence in a base area of p(+)-n-type GaP diodes in the temperature range 77-523 K. The method is based on U-T characterization of the diodes and calculation of E(g)(T) dependence according to the expression obtained within present study. Satisfactory agreement between experimental and theoretical results has been achieved including references available on gallium phosphide. The method proposed could be applied to experimental data processing in high-temperature thermometry.
authors: V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, Kherson, Ukraine.
authors: V A
authors: VA
authors: Krasnov
authors: S V
authors: SV
authors: Shutov
authors: Yu M
authors: YM
authors: Shwarts
authors: S Yu
authors: SY
authors: Yerochin