title: New silicon architectures by gold-assisted chemical etching.
abstract: Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted chemical etching. The combination of these methods allows the morphology and organization control of Si NWs on a large area. From the investigation of major parameters affecting the etching such as doping type, doping concentration of the substrate, we demonstrate the formation of new Si architectures consisting of organized Si NW arrays formed on a micro/mesoporous silicon layer with different thickness. These investigations will allow us to better understand the mechanism of Si etching to enable a wide range of applications such as molecular sensing, and for thermoelectric and photovoltaic devices.
authors: EMPA, Swiss Federal Laboratories for Materials Science and Technology, Mechanics of Micro-Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun, Switzerland. mikhael.bechelany@iemm.univ-lyon1.fr
authors: Bechelany
authors: B
authors: Mikhael
authors: Berodier
authors: B
authors: Elise
authors: Maeder
authors: M
authors: Xavier
authors: Schmitt
authors: S
authors: Sebastian
authors: Michler
authors: M
authors: Johann
authors: Philippe
authors: P
authors: Laetitia