title: Humidity response properties of a potentiometric sensor using LaF3 thin film as the solid electrolyte.
abstract: A thin-film type potentiometric sensor has been prepared by the implementation of electro-beam evaporation, rf magnetron sputtering methods, and micromachining processes. Sn film was deposited on n-Si/SiO(2) (400 nm) substrate. A deposited LaF(3) film was applied as solid electrolyte and sputtered Pt film was used as the sensing electrode. The patterns of the Pt and LaF(3) were realized by the micromachining processes. The LaF(3) film was characterized by scanning electron microscopy and energy dispersive x ray. Saturated aqueous solutions were used to achieve controlled humidity environments. When the sensor was exposed to humidity environments, the electromotive force (EMF) of the sensor was examined. It was found that the sensor varies with the relative humidity (RH). The stable response curve was presented and non-Nernst behavior between the average EMF values and RH may be shown.
authors: State Key Laboratory for Manufacturing Systems Engineering, Xi'an, Shaanxi, People's Republic of China.
authors: Guoliang
authors: G
authors: Sun
authors: Hairong
authors: H
authors: Wang
authors: Zhuangde
authors: Z
authors: Jiang