title: Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes.
abstract: A memory structure based on self-aligned silicon nanocrystals (Si NCs) grown over Al(2)O(3)-covered parallel-aligned carbon nanotubes (CNTs) by gas source molecular beam epitaxy is reported. Electrostatic force microscopy characterizations directly prove the charging and discharging of discrete NCs through the Al(2)O(3) layer covering the CNTs. A CNT field effect transistor based on the NC/CNT structure is fabricated and characterized, demonstrating evident memory characteristics. Direct tunneling and Fowler-Nordheim tunneling phenomena are observed at different programming/erasing voltages. Retention is demonstrated to be on the order of 10(4) s. Although there is still plenty of room to enhance the performance, the results suggest that CNT-based NC memory with diminutive CNTs and NCs could be an alternative structure to replace traditional floating gate memory.
authors: Department of Electrical Engineering, University of California, Riverside, California 92521, United States.
authors: Mario
authors: M
authors: Olmedo
authors: Chuan
authors: C
authors: Wang
authors: Koungmin
authors: K
authors: Ryu
authors: Huimei
authors: H
authors: Zhou
authors: Jingjian
authors: J
authors: Ren
authors: Ning
authors: N
authors: Zhan
authors: Chongwu
authors: C
authors: Zhou
authors: Jianlin
authors: J
authors: Liu