title: Exchange-induced electron transport in heavily phosphorus-doped si nanowires.
abstract: Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T(min)), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea.
authors.forename: Tae-Eon
authors.initials: TE
authors.lastname: Park
authors.forename: Byoung-Chul
authors.initials: BC
authors.lastname: Min
authors.forename: Ilsoo
authors.initials: I
authors.lastname: Kim
authors.forename: Jee-Eun
authors.initials: JE
authors.lastname: Yang
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Jo
authors.forename: Joonyeon
authors.initials: J
authors.lastname: Chang
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi
mesh_terms: D004579:Electron Transport; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010758:Phosphorus / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
chemical_list: D010758:Phosphorus; D012825:Silicon