title: Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
abstract: Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.
authors.affiliation: Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon, INSA-Lyon, Villeurbanne, France.
authors.forename: M H Hadj
authors.initials: MH
authors.lastname: Alouane
authors.forename: R
authors.initials: R
authors.lastname: Anufriev
authors.forename: N
authors.initials: N
authors.lastname: Chauvin
authors.forename: H
authors.initials: H
authors.lastname: Khmissi
authors.forename: K
authors.initials: K
authors.lastname: Naji
authors.forename: B
authors.initials: B
authors.lastname: Ilahi
authors.forename: H
authors.initials: H
authors.lastname: Maaref
authors.forename: G
authors.initials: G
authors.lastname: Patriarche
authors.forename: M
authors.initials: M
authors.lastname: Gendry
authors.forename: C
authors.initials: C
authors.lastname: Bru-Chevallier