title: Modeling the point-spread function in helium-ion lithography.
abstract: We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions.
authors.affiliation: Massachusetts Institute of Technology, Cambridge, Massachusetts, USA. dwinston@mit.edu
authors.forename: Donald
authors.initials: D
authors.lastname: Winston
authors.forename: J
authors.initials: J
authors.lastname: Ferrera
authors.forename: L
authors.initials: L
authors.lastname: Battistella
authors.forename: A E
authors.initials: AE
authors.lastname: Vladár
authors.forename: K K
authors.initials: KK
authors.lastname: Berggren