title: High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors.
abstract: We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1 V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8 × 10(5). The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices.
authors.affiliation: Nanoscience Technology Center and Department of Physics, University of Central Florida, Orlando, FL 32826, USA.
authors.forename: Kristy J
authors.initials: KJ
authors.lastname: Kormondy
authors.forename: Paul
authors.initials: P
authors.lastname: Stokes
authors.forename: Saiful I
authors.initials: SI
authors.lastname: Khondaker