title: Effects of silicon cross section and neutron spectrum on the radial uniformity in neutron transmutation doping.
abstract: The effects of silicon cross section and neutron spectrum on the radial uniformity of a Si-ingot are examined experimentally with various neutron spectrum conditions. For the cross section effect, the numerical results using silicon single crystal cross section reveal good agreements with experiments within relative difference of 6%, whereas the discrepancy is approximately 20% in free-gas cross section. For the neutron spectrum effect, the radial uniformity in hard neutron spectrum is found to be more flattening than that in soft spectrum.
authors.affiliation: Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan. hskim@post3.rri.kyoto-u.ac.jp
authors.forename: Haksung
authors.initials: H
authors.lastname: Kim
authors.forename: Cheol
authors.initials: C
authors.lastname: Ho Pyeon
authors.forename: Jae-Yong
authors.initials: JY
authors.lastname: Lim
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Misawa
mesh_terms: D003198:Computer Simulation; D004307:Dose-Response Relationship, Radiation; D008956:Models, Chemical; D009502:Neutrons; D011829:Radiation Dosage; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*
chemical_list: D012825:Silicon