title: Emission wavelength tuning by mechanical stressing of GaAs/Ge/Si microbeams.
abstract: We propose an approach for tuning a gain spectrum of semiconductor lasers under temperature fluctuations, where the heat-induced effect is dynamically compensated using a mechanical stressing. By stressing GaAs/Ge/Si microbeams, emission wavelength tuning is experimentally demonstrated for the overlying GaAs layers as a proof-of-concept, and the results are followed by theoretical calculations. It is discussed that this approach is effective to cancel the gain spectrum shift and will be indispensable to the integration of light sources toward WDM systems on a chip.
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo Bunkyo, Tokyo, 113-8656, Japan.
authors.forename: Yu
authors.initials: Y
authors.lastname: Horie
authors.forename: Laurent
authors.initials: L
authors.lastname: Décosterd
authors.forename: Ryota
authors.initials: R
authors.lastname: Suzuki
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Ishikawa
authors.forename: Kazumi
authors.initials: K
authors.lastname: Wada