title: Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.
abstract: A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.
authors.affiliation: Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, University Road, Tainan 7010, Taiwan.
authors.forename: Yi-Jung
authors.initials: YJ
authors.lastname: Liu
authors.forename: Chien-Chang
authors.initials: CC
authors.lastname: Huang
authors.forename: Tai-You
authors.initials: TY
authors.lastname: Chen
authors.forename: Chi-Shiang
authors.initials: CS
authors.lastname: Hsu
authors.forename: Jian-Kai
authors.initials: JK
authors.lastname: Liou
authors.forename: Tsung-Yuan
authors.initials: TY
authors.lastname: Tsai
authors.forename: Wen-Chau
authors.initials: WC
authors.lastname: Liu