title: Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers.
abstract: The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property.
authors.affiliation: Department of Photonic & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan.
authors.forename: Hsin-Chu
authors.initials: HC
authors.lastname: Chen
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Lin
authors.forename: Hao-Wei
authors.initials: HW
authors.lastname: Han
authors.forename: Yu-Lin
authors.initials: YL
authors.lastname: Tsai
authors.forename: Chia-Hua
authors.initials: CH
authors.lastname: Chang
authors.forename: Hsun-Wen
authors.initials: HW
authors.lastname: Wang
authors.forename: Min-An
authors.initials: MA
authors.lastname: Tsai
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: Peichen
authors.initials: P
authors.lastname: Yu