title: Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer.
abstract: Femtosecond laser pulses are focused on a thin film of Ge2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices.
authors.affiliation: Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan.
authors.forename: Ming Lun
authors.initials: ML
authors.lastname: Tseng
authors.forename: Bo Han
authors.initials: BH
authors.lastname: Chen
authors.forename: Cheng Hung
authors.initials: CH
authors.lastname: Chu
authors.forename: Chia Min
authors.initials: CM
authors.lastname: Chang
authors.forename: Wei Chih
authors.initials: WC
authors.lastname: Lin
authors.forename: Nien-Nan
authors.initials: NN
authors.lastname: Chu
authors.forename: Masud
authors.initials: M
authors.lastname: Mansuripur
authors.forename: Ai Qun
authors.initials: AQ
authors.lastname: Liu
authors.forename: Din Ping
authors.initials: DP
authors.lastname: Tsai