title: Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits.
abstract: We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.
authors.affiliation: Integrated Nanotechnology Lab, Electrical Engineering, Division of Physical Science and Engineering, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
authors.forename: Hossain M
authors.initials: HM
authors.lastname: Fahad
authors.forename: Casey E
authors.initials: CE
authors.lastname: Smith
authors.forename: Jhonathan P
authors.initials: JP
authors.lastname: Rojas
authors.forename: Muhammad M
authors.initials: MM
authors.lastname: Hussain