title: Atomic force microscopy based tunable local anodic oxidation of graphene.
abstract: We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V(tip). For G/GO/G junctions fabricated with large and small |V(tip)|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.
authors.affiliation: Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. msatoru@iis.u-tokyo.ac.jp
authors.forename: Satoru
authors.initials: S
authors.lastname: Masubuchi
authors.forename: Miho
authors.initials: M
authors.lastname: Arai
authors.forename: Tomoki
authors.initials: T
authors.lastname: Machida
mesh_terms: D003460:Crystallization / Q000379:methods*; D004566:Electrodes; D004595:Electroplating / Q000379:methods*; D006108:Graphite / Q000138:chemical synthesis*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D018625:Microscopy, Atomic Force / Q000379:methods*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010084:Oxidation-Reduction; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D006108:Graphite