title: Theory of the ultrafast mode-locked GaN lasers in a large-signal regime.
abstract: Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.
authors.affiliation: P N Lebedev Physical Institute, Moscow, Russia.
authors.forename: Igor V
authors.initials: IV
authors.lastname: Smetanin
authors.forename: Peter P
authors.initials: PP
authors.lastname: Vasil'ev
authors.forename: Dmitri L
authors.initials: DL
authors.lastname: Boiko