title: Suspended and localized single nanostructure growth across a nanogap by an electric field.
abstract: Direct growth of a suspended single nanostructure (SSN) at a specific location is presented. The SSN is grown across a metallic nanoscale gap by migration in air at room temperature. The nanogap is fabricated by industrial standard optical lithography and anisotropic wet chemical silicon etching. A DC current bias, 1 nA, is applied across the metallic gap to induce nanoscale migration of Zn or ZnO. The history of the voltage drop across the gap as a function of time clearly indicates the moment when migration begins. The shape of SSNs grown across the nanogap by the migration is asymmetric at each electrode due to the asymmetric electric field distribution within the nanogap. An SSN can be used as the platform for two-terminal active or passive nanoscale electronics in optoelectronics, radio frequency (RF) resonators, and chemical/biological sensors.
authors.affiliation: Department of Electrical and Computer Engineering, Marquette University, WI 53201, USA. chunghoon.lee@marquettte.edu
authors.forename: Chung-Hoon
authors.initials: CH
authors.lastname: Lee
authors.forename: Jun Hyun
authors.initials: JH
authors.lastname: Han
authors.forename: Susan C
authors.initials: SC
authors.lastname: Schneider
authors.forename: Fabien
authors.initials: F
authors.lastname: Josse
mesh_terms: D004560:Electricity; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry; D014961:X-Ray Diffraction; D015032:Zinc / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D015032:Zinc; D015034:Zinc Oxide; D012825:Silicon