title: Enhanced lateral photovoltaic effect in the p-n heterojunction composed of manganite and silicon by side irradiation for position sensitive detecting.
abstract: Lateral photovoltaic effect has been studied in p-La0.67Ca0.33MnO3/n-Si heterojunction. Under illumination of continuous 808 nm laser beam on the film surface, a transient photovoltaic overshoot accompanied with the steady signal was observed when the laser turned off and on. The open-circuit photovoltage had a linear dependence on illuminated position, and the sensitivity reached 0.75 mV mW(-1) mm(-1) for steady value and 6.25 mV mW(-1) mm(-1) for the transient peak value. Especially, an enhancement in position detecting sensitivity was observed when the interface of this heterojunction was irradiated, which were 1.25 mV mW(-1) mm(-1) (steady value) and 26.0 mV mW(-1) mm(-1) (peak value). This work demonstrates a novel way to increase sensitivity for manganite-based position sensitive detectors.
authors.affiliation: State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Du
authors.forename: Hao
authors.initials: H
authors.lastname: Ni
authors.forename: Kun
authors.initials: K
authors.lastname: Zhao
authors.forename: Y-C
authors.initials: YC
authors.lastname: Kong
authors.forename: H K
authors.initials: HK
authors.lastname: Wong
authors.forename: Songqing
authors.initials: S
authors.lastname: Zhao
authors.forename: Shaohua
authors.initials: S
authors.lastname: Chen