title: Large lateral photovoltaic effect observed in nano Al-doped ZnO films.
abstract: Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.
authors.affiliation: Department of Physics, the State Key Laboratory on Local Fiber-Optical Communication Networks and Advanced Optical Communication Systems, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai 200240, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Lu
authors.forename: Hui
authors.initials: H
authors.lastname: Wang