title: 8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band.
abstract: We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, "green" photonics.
authors.affiliation: Ècole Polytechnique Fèdèrale de Lausanne, Laboratory of Physics of Nanostructures, Lausanne, Switzerland. andrei.caliman@epfl.ch
authors.forename: Andrei
authors.initials: A
authors.lastname: Caliman
authors.forename: Alexandru
authors.initials: A
authors.lastname: Mereuta
authors.forename: Grigore
authors.initials: G
authors.lastname: Suruceanu
authors.forename: Vladimir
authors.initials: V
authors.lastname: Iakovlev
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon