title: GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.
abstract: In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED.
authors.affiliation: School of Physics and State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing, China
authors.forename: XingXing
authors.initials: X
authors.lastname: Fu
authors.forename: Bei
authors.initials: B
authors.lastname: Zhang
authors.forename: XiangNing
authors.initials: X
authors.lastname: Kang
authors.forename: JunJing
authors.initials: J
authors.lastname: Deng
authors.forename: Chang
authors.initials: C
authors.lastname: Xiong
authors.forename: Tao
authors.initials: T
authors.lastname: Dai
authors.forename: XianZhe
authors.initials: X
authors.lastname: Jiang
authors.forename: TongJun
authors.initials: T
authors.lastname: Yu
authors.forename: ZhiZhong
authors.initials: Z
authors.lastname: Chen
authors.forename: Guo Yi
authors.initials: GY
authors.lastname: Zhang