title: Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions.
abstract: 10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.
authors.affiliation: Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât 220, F-91405 Orsay France.
authors.forename: Melissa
authors.initials: M
authors.lastname: Ziebell
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Gilles
authors.initials: G
authors.lastname: Rasigade
authors.forename: Paul
authors.initials: P
authors.lastname: Crozat
authors.forename: Jean-Marc
authors.initials: JM
authors.lastname: Fédéli
authors.forename: Philippe
authors.initials: P
authors.lastname: Grosse
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien