title: Broadband antireflection and absorption enhancement by forming nano-patterned Si structures for solar cells.
abstract: In this letter, we report the antireflection and light absorption enhancement by forming sub-wavelength nano-patterned Si structures via nano-sphere lithography technique. It is found that the surface reflection can be significantly suppressed in a wide spectral range (400-1000 nm) and the weighted mean reflection is less than 5%. Meanwhile, the broad band optical absorption enhancement is achieved consequently. Heterojunction solar cells are prepared by depositing ultrathin amorphous Si film on the nano-patterned Si structures, the short circuit current density increases to 37.2 mA/cm(2)and the power conversion efficiency is obviously improved compared to the reference cell on flat Si substrate.
authors.affiliation: National Laboratory of Solid State Microstructures, Department of Microelectronics and Optoelectronics and Department of Physics, Nanjing University, Nanjing, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: S H
authors.initials: SH
authors.lastname: Sun
authors.forename: J
authors.initials: J
authors.lastname: Xu
authors.forename: L
authors.initials: L
authors.lastname: Zhao
authors.forename: H C
authors.initials: HC
authors.lastname: Sun
authors.forename: J
authors.initials: J
authors.lastname: Li
authors.forename: W W
authors.initials: WW
authors.lastname: Mu
authors.forename: L
authors.initials: L
authors.lastname: Xu
authors.forename: K J
authors.initials: KJ
authors.lastname: Chen