title: Built-in electric field minimization in (In, Ga)N nanoheterostructures.
abstract: (In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they offer the possibility of directly converting electrical energy into light of any visible wavelength without the use of down-converting phosphors. In this paper, three-dimensional computation of the spatial distribution of the mechanical and electrical equilibrium in nanoheterostructures of arbitrary topologies is used to elucidate the complex interactions between geometry, epitaxial strain, remnant polarization, and piezoelectric and dielectric contributions to the self-induced internal electric fields. For a specific geometry-nanorods with pyramidal caps-we demonstrate that by tuning the quantum well to cladding layer thickness ratio, h(w)/h(c), a minimal built-in electric field can be experimentally realized and canceled, in the limit of h(w)/h(c) = 1.28, for large h(c) values.
authors.affiliation: School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Liang
authors.forename: Isaac H
authors.initials: IH
authors.lastname: Wildeson
authors.forename: Robert
authors.initials: R
authors.lastname: Colby
authors.forename: David A
authors.initials: DA
authors.lastname: Ewoldt
authors.forename: Tong
authors.initials: T
authors.lastname: Zhang
authors.forename: Timothy D
authors.initials: TD
authors.lastname: Sands
authors.forename: Eric A
authors.initials: EA
authors.lastname: Stach
authors.forename: Bedrich
authors.initials: B
authors.lastname: Benes
authors.forename: R Edwin
authors.initials: RE
authors.lastname: García
mesh_terms: D003198:Computer Simulation; D004574:Electromagnetic Fields; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride