title: A compact model for early electromigration failures of copper dual-damascene interconnects.
abstract: A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes.
authors.affiliation: Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.
authors.forename: R L
authors.initials: RL
authors.lastname: de Orio
authors.forename: H
authors.initials: H
authors.lastname: Ceric
authors.forename: S
authors.initials: S
authors.lastname: Selberherr