title: Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis.
abstract: Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.
authors.affiliation: Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA.
authors.forename: T
authors.initials: T
authors.lastname: Guillemet
authors.forename: Z Q
authors.initials: ZQ
authors.lastname: Xie
authors.forename: Y S
authors.initials: YS
authors.lastname: Zhou
authors.forename: J B
authors.initials: JB
authors.lastname: Park
authors.forename: A
authors.initials: A
authors.lastname: Veillere
authors.forename: W
authors.initials: W
authors.lastname: Xiong
authors.forename: J M
authors.initials: JM
authors.lastname: Heintz
authors.forename: J F
authors.initials: JF
authors.lastname: Silvain
authors.forename: N
authors.initials: N
authors.lastname: Chandra
authors.forename: Y F
authors.initials: YF
authors.lastname: Lu