title: X-ray beam induced current method at the laboratory x-ray source.
abstract: The x-ray beam induced current method (XBIC) is realized on the laboratory x-ray source using the polycapillary x-ray optics. It is shown that rather good images of grain boundaries in Si can be obtained by this method. The parameters of x-ray beam are estimated by the simulation of Schottky diode image. A good correlation between the experimental and calculated grain boundary XBIC contrast is obtained. The possibilities of laboratory source based XBIC method are estimated.
authors.affiliation: Institution of Russian Academy of Sciences, Institute of Microelectronics Technology, and High-Purity Materials RAS, Chernogolovka 142432 Russia.
authors.forename: R R
authors.initials: RR
authors.lastname: Fahrtdinov
authors.forename: O V
authors.initials: OV
authors.lastname: Feklisova
authors.forename: M V
authors.initials: MV
authors.lastname: Grigoriev
authors.forename: D V
authors.initials: DV
authors.lastname: Irzhak
authors.forename: D V
authors.initials: DV
authors.lastname: Roshchupkin
authors.forename: E B
authors.initials: EB
authors.lastname: Yakimov