title: M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.
abstract: Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.
authors.affiliation: CEA-CNRS-UJF group, Nanophysique et Semi-conducteurs, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, F-38054, France.
authors.forename: Robert
authors.initials: R
authors.lastname: Koester
authors.forename: Jun-Seok
authors.initials: JS
authors.lastname: Hwang
authors.forename: Damien
authors.initials: D
authors.lastname: Salomon
authors.forename: Xiaojun
authors.initials: X
authors.lastname: Chen
authors.forename: Catherine
authors.initials: C
authors.lastname: Bougerol
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Barnes
authors.forename: Daniel Le Si
authors.initials: Dle S
authors.lastname: Dang
authors.forename: Lorenzo
authors.initials: L
authors.lastname: Rigutti
authors.forename: Andres
authors.initials: A
authors.lastname: de Luna Bugallo
authors.forename: Gwénolé
authors.initials: G
authors.lastname: Jacopin
authors.forename: Maria
authors.initials: M
authors.lastname: Tchernycheva
authors.forename: Christophe
authors.initials: C
authors.lastname: Durand
authors.forename: Joël
authors.initials: J
authors.lastname: Eymery
mesh_terms: D004581:Electronics; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008163:Luminescent Measurements / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride