title: Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
abstract: New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.
authors.affiliation: Division of Physics and Applied Physics, 21 Nanyang Link, Nanyang Technological University, Singapore.
authors.forename: Xing
authors.initials: X
authors.lastname: Dai
authors.forename: Shadi A
authors.initials: SA
authors.lastname: Dayeh
authors.forename: Vaithianathan
authors.initials: V
authors.lastname: Veeramuthu
authors.forename: Alexandre
authors.initials: A
authors.lastname: Larrue
authors.forename: Jian
authors.initials: J
authors.lastname: Wang
authors.forename: Haibin
authors.initials: H
authors.lastname: Su
authors.forename: Cesare
authors.initials: C
authors.lastname: Soci
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D005740:Gases / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012996:Solutions; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D005740:Gases; D046911:Macromolecular Substances; D012996:Solutions; C043055:gallium arsenide; D005708:Gallium