title: Anodized aluminum oxide thin films for room-temperature-processed, flexible, low-voltage organic non-volatile memory elements with excellent charge retention.
authors.affiliation: Soft Matter Physics, Johannes Kepler University, Altenbergerstr. 69, 4040 Linz, Austria. martin.kaltenbrunner@jku.at
authors.forename: Martin
authors.initials: M
authors.lastname: Kaltenbrunner
authors.forename: Philipp
authors.initials: P
authors.lastname: Stadler
authors.forename: Reinhard
authors.initials: R
authors.lastname: Schwödiauer
authors.forename: Achim Walter
authors.initials: AW
authors.lastname: Hassel
authors.forename: Niyazi Serdar
authors.initials: NS
authors.lastname: Sariciftci
authors.forename: Siegfried
authors.initials: S
authors.lastname: Bauer
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D009279:Naphthacenes / Q000737:chemistry; D020959:Polyethylene / Q000737:chemistry; D012117:Resins, Synthetic / Q000737:chemistry; D012821:Silanes / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D009279:Naphthacenes; D012117:Resins, Synthetic; D012821:Silanes; C029945:polyimide resin; D020959:Polyethylene; C523499:pentacene; C025249:octyltrichlorosilane; D000537:Aluminum Oxide