title: Piezoresistance behaviors of p-type 6H-SiC nanowires.
abstract: We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.
authors.affiliation: Institute of Materials, Ningbo University of Technology, Ningbo City, 315016, PR China.
authors.forename: Fengmei
authors.initials: F
authors.lastname: Gao
authors.forename: Jinju
authors.initials: J
authors.lastname: Zheng
authors.forename: Mingfang
authors.initials: M
authors.lastname: Wang
authors.forename: Guodong
authors.initials: G
authors.lastname: Wei
authors.forename: Weiyou
authors.initials: W
authors.lastname: Yang