title: A mobile Sn nanowire inside a β-Ga2 O3 tube: a practical nanoscale electrically/thermally driven switch.
abstract: Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based on a mobile Sn nanowire inside a β-Ga2 O3 tube. The melting point of Sn inside the Ga2 O3 tube is found to be as low as 58 °C-far below the value of bulk Sn (231.89 °C)-and its crystal phase (β-Sn) remains unchanged even at temperatures as low as -170 °C. Thus a miniaturization of the unique wide-temperature-range thermometer based on the linear thermal expansion of liquid Sn fillings in the Ga2 O3 tube is realized. In addition, the electrical properties of the Sn-nanowire-filled β-Ga2 O3 tubes are carefully determined: importantly, the resistance demonstrates a sudden drop (rise) when two Sn nanowires contact (separate), due to the thermally driven motion of the liquid Sn fillings inside the tube. Thus this structure can be switched between its on and off states by controlling the motion, merging or splitting, of the Sn nanowires inside the tube, either electrically, by applying a current, or thermally, at a predetermined temperature.
authors.affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China.
authors.forename: Rujia
authors.initials: R
authors.lastname: Zou
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Zhang
authors.forename: Qiwei
authors.initials: Q
authors.lastname: Tian
authors.forename: Guanxing
authors.initials: G
authors.lastname: Ma
authors.forename: Guosheng
authors.initials: G
authors.lastname: Song
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Chen
authors.forename: Junqing
authors.initials: J
authors.lastname: Hu
mesh_terms: D004560:Electricity; D004566:Electrodes; D005708:Gallium / Q000737:chemistry*; D006046:Gold / Q000737:chemistry; D036103:Nanotechnology / Q000295:instrumentation*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D044367:Phase Transition; D013696:Temperature; D013821:Thermometers; D014001:Tin / Q000737:chemistry*
chemical_list: C038863:gallium oxide; D014001:Tin; D006046:Gold; D005708:Gallium