title: Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.
abstract: Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.
authors.affiliation: Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, PR China.
authors.forename: Zhizhong
authors.initials: Z
authors.lastname: Hu
authors.forename: Xiujuan
authors.initials: X
authors.lastname: Zhang
authors.forename: Chao
authors.initials: C
authors.lastname: Xie
authors.forename: Chunyan
authors.initials: C
authors.lastname: Wu
authors.forename: Xiaozhen
authors.initials: X
authors.lastname: Zhang
authors.forename: Liang
authors.initials: L
authors.lastname: Bian
authors.forename: Yiming
authors.initials: Y
authors.lastname: Wu
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: Yuping
authors.initials: Y
authors.lastname: Zhang
authors.forename: Jiansheng
authors.initials: J
authors.lastname: Jie
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012031:Refractometry; D018036:Selenium Compounds / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D019187:Cadmium Compounds; D046911:Macromolecular Substances; D018036:Selenium Compounds; D005857:Germanium; C058667:cadmium selenide