title: Electrochemical isothermal-capacitance-transient spectroscopy: a new depth profiling method of deep levels.
abstract: The authors report on a new depth profiling method of deep levels, which we call electrochemical isothermal-capacitance-transient spectroscopy (EICTS). This is combined with electrochemical capacitance-voltage using the Schottky barrier of etchable electrolyte and isothermal-capacitance-transient spectroscopy using the capacitance-transient profile at a fixed temperature. We proved its validity by applying to the ZnSe:N epitaxial film of thickness of more than 1000 nm and comparing the characteristics of an obtained deep level with the results measured by conventional deep-level detection techniques. It is expected that EICTS is very effective to assess the deep levels of wide-bandgap semiconductors that suffer from various point defects and their complexes.
authors.affiliation: Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Sendai 980-8578, Japan.
authors.forename: S Q
authors.initials: SQ
authors.lastname: Wang
authors.forename: F
authors.initials: F
authors.lastname: Lu
authors.forename: D C
authors.initials: DC
authors.lastname: Oh
authors.forename: J H
authors.initials: JH
authors.lastname: Chang
authors.forename: T
authors.initials: T
authors.lastname: Hanada
authors.forename: T
authors.initials: T
authors.lastname: Yao