title: Charge state switching of deep levels for low-power optical modulation in silicon waveguides.
abstract: We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.
authors.affiliation: Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, ON, Canada. logand@mcmaster.ca
authors.forename: D F
authors.initials: DF
authors.lastname: Logan
authors.forename: P
authors.initials: P
authors.lastname: Velha
authors.forename: M
authors.initials: M
authors.lastname: Sorel
authors.forename: R M
authors.initials: RM
authors.lastname: De la Rue
authors.forename: G
authors.initials: G
authors.lastname: Wojcik
authors.forename: A
authors.initials: A
authors.lastname: Goebel
authors.forename: P E
authors.initials: PE
authors.lastname: Jessop
authors.forename: A P
authors.initials: AP
authors.lastname: Knights