title: Field mapping with nanometer-scale resolution for the next generation of electronic devices.
abstract: In order to improve the performance of today's nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction.
authors.affiliation: CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France. david.cooper@cea.fr
authors.forename: David
authors.initials: D
authors.lastname: Cooper
authors.forename: Francisco
authors.initials: F
authors.lastname: de la Peña
authors.forename: Armand
authors.initials: A
authors.lastname: Béché
authors.forename: Jean-Luc
authors.initials: JL
authors.lastname: Rouvière
authors.forename: Germain
authors.initials: G
authors.lastname: Servanton
authors.forename: Roland
authors.initials: R
authors.lastname: Pantel
authors.forename: Pierre
authors.initials: P
authors.lastname: Morin
mesh_terms: D004574:Electromagnetic Fields; D019544:Equipment Failure Analysis / Q000379:methods*; D046529:Microscopy, Electron, Transmission / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D011874:Radiometry / Q000379:methods*; D012666:Semiconductors