title: Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition.
abstract: Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.
authors.affiliation: Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors.forename: Joshua D
authors.initials: JD
authors.lastname: Wood
authors.forename: Scott W
authors.initials: SW
authors.lastname: Schmucker
authors.forename: Austin S
authors.initials: AS
authors.lastname: Lyons
authors.forename: Eric
authors.initials: E
authors.lastname: Pop
authors.forename: Joseph W
authors.initials: JW
authors.lastname: Lyding
mesh_terms: D003300:Copper / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D005740:Gases; D046911:Macromolecular Substances; D006108:Graphite; D003300:Copper