title: High optical quality InP-based nanopillars fabricated by a top-down approach.
abstract: Dense and uniform arrays of InP-based nanopillars were fabricated by dry etching using self-assembly of colloidal silica particles for masking. The pillars, both single and arrays, fabricated from epitaxially grown InP and InP/GaInAsP/InP quantum well structures show excellent photoluminescence (PL) even at room temperature. The measured PL line widths are comparable to the as-grown wafer indicating high quality fabricated pillars. A stamping technique enables transfer with arbitrary densities of the nanopillars freed from the substrate by selectively etching a sacrificial InGaAs layer.
authors.affiliation: School of Information and Communication Technology,  Royal Institute of Technology  (KTH), ELECTRUM 229, S-16440 Kista, Sweden.
authors.forename: Shagufta
authors.initials: S
authors.lastname: Naureen
authors.forename: Reza
authors.initials: R
authors.lastname: Sanatinia
authors.forename: Naeem
authors.initials: N
authors.lastname: Shahid
authors.forename: Srinivasan
authors.initials: S
authors.lastname: Anand
mesh_terms: D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D008163:Luminescent Measurements / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C090882:indium phosphide