title: Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
abstract: We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO(2) by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO(2) substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V(-1) s(-1) in air and 472 cm(2) V(-1) s(-1) in N(2), which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.
authors: Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China.
authors: Jianyi
authors: J
authors: Chen
authors: Yugeng
authors: Y
authors: Wen
authors: Yunlong
authors: Y
authors: Guo
authors: Bin
authors: B
authors: Wu
authors: Liping
authors: L
authors: Huang
authors: Yunzhou
authors: Y
authors: Xue
authors: Dechao
authors: D
authors: Geng
authors: Dong
authors: D
authors: Wang
authors: Gui
authors: G
authors: Yu
authors: Yunqi
authors: Y
authors: Liu
mesh_terms: D003460:Crystallization; D006108:Graphite / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry*; D010316:Particle Size; D011108:Polymers / Q000138:chemical synthesis* / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D014835:Volatilization
chemical_list: D011108:Polymers; D012822:Silicon Dioxide; D006108:Graphite; D010100:Oxygen