title: Supercurrent through InAs nanowires with highly transparent superconducting contacts.
abstract: One-dimensional superconducting transistors have been fabricated with individual InAs nanowires (NWs) using radio-frequency sputter cleaning followed by in situ metal deposition. Because of the highly transparent contacts formed in between the InAs NWs and the metals, supercurrent, multiple Andreev reflections and Shapiro steps under microwave radiation have been observed. Near pinch-off gate regions, Fabry-Perot interference and a normal conductance quantization with resonant features have been observed, which were found to be correlated with a supercurrent flow.
authors: Advanced Device Laboratory, RIKEN Advanced Science Institute, Wako, Saitama, Japan.
authors: Takahiro
authors: T
authors: Nishio
authors: Tatsuya
authors: T
authors: Kozakai
authors: Shinichi
authors: S
authors: Amaha
authors: Marcus
authors: M
authors: Larsson
authors: Henrik A
authors: HA
authors: Nilsson
authors: H Q
authors: HQ
authors: Xu
authors: Guoqiang
authors: G
authors: Zhang
authors: Kouta
authors: K
authors: Tateno
authors: Hideaki
authors: H
authors: Takayanagi
authors: Koji
authors: K
authors: Ishibashi