title: Spin-orbit symmetries of conduction electrons in silicon.
abstract: We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.
authors: Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA. pengke@ece.rochester.edu
authors: Pengke
authors: P
authors: Li
authors: Hanan
authors: H
authors: Dery