title: Hot carrier-assisted intrinsic photoresponse in graphene.
abstract: We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.
authors: Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
authors: Nathaniel M
authors: NM
authors: Gabor
authors: Justin C W
authors: JC
authors: Song
authors: Qiong
authors: Q
authors: Ma
authors: Nityan L
authors: NL
authors: Nair
authors: Thiti
authors: T
authors: Taychatanapat
authors: Kenji
authors: K
authors: Watanabe
authors: Takashi
authors: T
authors: Taniguchi
authors: Leonid S
authors: LS
authors: Levitov
authors: Pablo
authors: P
authors: Jarillo-Herrero