title: Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack.
abstract: We apply our understanding of the physics of failure in the post-breakdown regime of high-κ  dielectric-based conventional logic transistors having a metal-insulator-semiconductor (MIS) structure to interpret the mechanism of resistive switching in resistive random-access memory (RRAM) technology metal-insulator-metal (MIM) stacks. Oxygen vacancies, gate metal migration and metal filament formation in the gate dielectric which constitute the chemistry of breakdown in the post-breakdown stage of logic gate stacks are attributed to be the mechanisms responsible for the SET process in RRAM technology. In this paper, we draw an analogy between the breakdown study in logic devices and filamentation physics in resistive non-volatile memory.
authors: gineering Product Development Pillar, Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682, Singapore.
authors: Xing
authors: X
authors: Wu
authors: Kin-Leong
authors: KL
authors: Pey
authors: Nagarajan
authors: N
authors: Raghavan
authors: Wen-Hu
authors: WH
authors: Liu
authors: Xiang
authors: X
authors: Li
authors: Ping
authors: P
authors: Bai
authors: Gang
authors: G
authors: Zhang
authors: Michel
authors: M
authors: Bosman