title: Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon.
abstract: We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ~ 200 A cm(-2).
authors: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada.
authors: Hieu Pham Trung
authors: HP
authors: Nguyen
authors: Kai
authors: K
authors: Cui
authors: Shaofei
authors: S
authors: Zhang
authors: Saeed
authors: S
authors: Fathololoumi
authors: Zetian
authors: Z
authors: Mi