title: Structure and electrical properties of Na0.5Bi0.5TiO3 ferroelectric thick films derived from a polymer modified sol-gel method.
abstract: Lead-free NaBi(0.5)TiO(3) (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500°C to 750°C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 μm, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness.
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, China.
authors: Hongfen
authors: H
authors: Ji
authors: Wei
authors: W
authors: Ren
authors: Lingyan
authors: L
authors: Wang
authors: Peng
authors: P
authors: Shi
authors: Xiaofeng
authors: X
authors: Chen
authors: Xiaoqing
authors: X
authors: Wu
authors: Xi
authors: X
authors: Yao
authors: Sien-Ting
authors: ST
authors: Lau
authors: Qifa
authors: Q
authors: Zhou
authors: K Kirk
authors: KK
authors: Shung