title: High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities.
abstract: Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2)  V(-1)  s(-1)  are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
authors: Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge, CB3 0HE, UK.
authors: Zhuoying
authors: Z
authors: Chen
authors: Mi Jung
authors: MJ
authors: Lee
authors: Raja
authors: R
authors: Shahid Ashraf
authors: Yun
authors: Y
authors: Gu
authors: Sebastian
authors: S
authors: Albert-Seifried
authors: Martin
authors: M
authors: Meedom Nielsen
authors: Bob
authors: B
authors: Schroeder
authors: Thomas D
authors: TD
authors: Anthopoulos
authors: Martin
authors: M
authors: Heeney
authors: Iain
authors: I
authors: McCulloch
authors: Henning
authors: H
authors: Sirringhaus
mesh_terms: D004583:Electrons; D004867:Equipment Design; D011108:Polymers / Q000737:chemistry*; D013876:Thiophenes / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D011108:Polymers; D013876:Thiophenes