title: High quantum efficiency GaP avalanche photodiodes.
abstract: Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.
authors: Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904, USA.
authors: Dion
authors: D
authors: McIntosh
authors: Qiugui
authors: Q
authors: Zhou
authors: Yaojia
authors: Y
authors: Chen
authors: Joe C
authors: JC
authors: Campbell
mesh_terms: D000465:Algorithms; D002138:Calibration; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D015902:Gamma Cameras; D008027:Light; D010720:Phosphines / Q000737:chemistry*; D014159:Transducers
chemical_list: D010720:Phosphines; C485338:gallium phosphide; D005708:Gallium