title: Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors.
abstract: Tungsten oxide is currently used as gate insulator in pH-sensing ion-sensitive field-effect transistors (ISFETs) and in electrochromic devices. Its great potential as a high-κ dielectric with high transparency and temperature stability is reported. Owing to the low gate voltage sweep necessary to turn the transistor on and off, a possible application could be as a low-voltage pixel driver in active-matrix displays in harsh environments.
authors: Institut für Experimentelle Physik II, Halbleiterphysik, Universität Leipzig, Germany. lorenz.ml@physik.uni-leipzig.de
authors: Michael
authors: M
authors: Lorenz
authors: Holger
authors: H
authors: von Wenckstern
authors: Marius
authors: M
authors: Grundmann
mesh_terms: D017097:Electric Impedance; D010087:Oxides / Q000737:chemistry*; D013696:Temperature; D014173:Transistors, Electronic; D014414:Tungsten / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D010087:Oxides; C511604:tungsten oxide; D015034:Zinc Oxide; D014414:Tungsten