title: Electrically driven quantum dot/wire/well hybrid light-emitting diodes.
abstract: Electrically driven quantum dot, wire, and well hybrid light-emitting diodes are demonstrated by using nanometer-sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light-emitting diodes containing low-dimensional quantum structures are good candidates for broad-band highly efficient visible lighting sources.
authors: Department of Physics and Graduate School of Nanoscience & Technology, Korea Advanced Institute of Science and Technology, Daejeon, Korea.
authors: Young-Ho
authors: YH
authors: Ko
authors: Je-Hyung
authors: JH
authors: Kim
authors: Li-Hua
authors: LH
authors: Jin
authors: Suk-Min
authors: SM
authors: Ko
authors: Bong-Joon
authors: BJ
authors: Kwon
authors: Joosung
authors: J
authors: Kim
authors: Taek
authors: T
authors: Kim
authors: Yong-Hoon
authors: YH
authors: Cho
mesh_terms: D004553:Electric Conductivity; D004566:Electrodes; D008027:Light; D045663:Quantum Dots