title: 25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning.
abstract: We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 μm2 footprint.
authors: Oracle Labs, Oracle, San Diego, California 92121, USA. glenn.li@oracle.com
authors: Guoliang
authors: G
authors: Li
authors: Xuezhe
authors: X
authors: Zheng
authors: Jin
authors: J
authors: Yao
authors: Hiren
authors: H
authors: Thacker
authors: Ivan
authors: I
authors: Shubin
authors: Ying
authors: Y
authors: Luo
authors: Kannan
authors: K
authors: Raj
authors: John E
authors: JE
authors: Cunningham
authors: Ashok V
authors: AV
authors: Krishnamoorthy