Selective growth of α-sexithiophene by using silicon oxides patterns.
A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm(2). Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.
CNR-ISMN, Institute for the Study of Nanostructured Materials, Via P. Gobetti 101, Bologna I-40129, Italy; E-Mails:  m.barbalinardo@bo.ismn.cnr.it  (M.B.);  m.cavallini@bo.ismn.cnr.it  (M.C.);  f.biscarini@bo.ismn.cnr.it  (F.B.).
Cristiano
C
Albonetti
Marianna
M
Barbalinardo
Silvia
S
Milita
Massimiliano
M
Cavallini
Fabiola
F
Liscio
Jean-François
JF
Moulin
Fabio
F
Biscarini
D018360:Crystallography, X-Ray; D004558:Electric Stimulation; D006576:Heterocyclic Compounds, 4 or More Rings / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D049329:Nanostructures / Q000737:chemistry*; D010084:Oxidation-Reduction; D010087:Oxides / Q000737:chemistry*; D053838:Scattering, Small Angle; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties; D013816:Thermodynamics; D013876:Thiophenes / Q000737:chemistry*; D014961:X-Ray Diffraction
D006576:Heterocyclic Compounds, 4 or More Rings; D010087:Oxides; D017655:Silicon Compounds; D013876:Thiophenes; C520246:sexithiophene