Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations.
High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (∼3300 cm(2) V(-) s(-1)), large I(on)/I(off) ratio (∼10(8)) and small subthreshold swing (∼70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100 MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.
School of Electrical Engineering, Korea University, Seoul 136-701, Korea.
Changjoon
C
Yoon
Taeho
T
Moon
Myeongwon
M
Lee
Gyoujin
G
Cho
Sangsig
S
Kim