Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.
We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.
National Institute of Standards and Technology, Physical Measurement Laboratory, 325 Broadway, Boulder, CO 80305, USA. aric.sanders@nist.gov
Aric
A
Sanders
Paul
P
Blanchard
Kris
K
Bertness
Matthew
M
Brubaker
Christopher
C
Dodson
Todd
T
Harvey
Andrew
A
Herrero
Devin
D
Rourke
John
J
Schlager
Norman
N
Sanford
Ann N
AN
Chiaramonti
Albert
A
Davydov
Abhishek
A
Motayed
Denis
D
Tsvetkov