Quantum dot behavior in bilayer graphene nanoribbons.
Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs.
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, USA.
Minsheng
M
Wang
Emil B
EB
Song
Sejoon
S
Lee
Jianshi
J
Tang
Murong
M
Lang
Caifu
C
Zeng
Guangyu
G
Xu
Yi
Y
Zhou
Kang L
KL
Wang