Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature.
Single- and multilayer MoS(2)  films are deposited onto Si/SiO(2)  using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2)  device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2)  devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Hai
H
Li
Zongyou
Z
Yin
Qiyuan
Q
He
Hong
H
Li
Xiao
X
Huang
Gang
G
Lu
Derrick Wen Hui
DW
Fam
Alfred Iing Yoong
AI
Tok
Qing
Q
Zhang
Hua
H
Zhang
D004867:Equipment Design; D005740:Gases / Q000032:analysis / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D009609:Nitrous Oxide / Q000032:analysis* / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
D005740:Gases; D009609:Nitrous Oxide