Quantum confinement effects in nanoscale-thickness InAs membranes.
Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Kuniharu
K
Takei
Hui
H
Fang
S Bala
SB
Kumar
Rehan
R
Kapadia
Qun
Q
Gao
Morten
M
Madsen
Ha Sul
HS
Kim
Chin-Hung
CH
Liu
Yu-Lun
YL
Chueh
Elena
E
Plis
Sanjay
S
Krishna
Hans A
HA
Bechtel
Jing
J
Guo
Ali
A
Javey
D001152:Arsenicals / Q000737:chemistry*; D004579:Electron Transport; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size
D001152:Arsenicals; D008567:Membranes, Artificial; D007204:Indium; C076773:indium arsenide