Modulating the performance of carbon nanotube field-effect transistors via Rose Bengal molecular doping.
A simple, reliable, and large scale ambient environment doping method for carbon nanotubes is a highly desirable approach for modulating the performance of nanotube based electronics. One of the major challenges is doping carbon nanotubes to simultaneously offer a large shift in threshold voltage and an improved subthreshold swing. In this paper, we report on modulating the performance of carbon nanotube field-effect transistors (CNTFETs) by rationally selecting doping molecules. We demonstrated that Rose Bengal sodium salt (RB-Na) molecular doping can effectively shift the threshold voltage (ΔVth) of CNTFETs up to ∼6 V, decrease the subthreshold swing down to 130 mV/decade, and increase the effective field-effect mobility to 5 cm2 V(-1) s(-1). It is also shown that CNTFETs doped with Rose Bengal lactone (RBL) show a smaller variation in ΔVth (∼2 V) and subthreshold swing than those doped by RB-Na, which can be attributed to the difference in their molecular structures. The observed right-shift of the threshold voltage is attributed to the positive charge doping of the nanotube conduction channel from Rose Bengal molecules. The resultant lowering of the subthreshold swing is due to the reduced Schottky barrier at the CNT/metal/molecule interface. This room temperature chemical doping approach provides an efficient, simple, and cost-effective method to fabricate highly reliable and high-performance nanotube transistors for future nanotube based electronics.
NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing, Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USA. ju.huang@neu.edu
Jun
J
Huang
Aniket
A
Datar
Sivasubramanian
S
Somu
Ahmed
A
Busnaina