Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.
Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.
Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Hongtao
H
Zhang
Xuefeng
X
Guo
Jingshu
J
Hui
Shuxin
S
Hu
Wei
W
Xu
Daoben
D
Zhu
D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D036103:Nanotechnology / Q000295:instrumentation*; D009930:Organic Chemicals / Q000737:chemistry*; D012666:Semiconductors; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D009930:Organic Chemicals