Low-k periodic mesoporous organosilica with air walls: POSS-PMO.
Periodic mesoporous organosilica (PMO) with polyhedral oligomeric silsesquioxane (POSS) air pockets integrated into the pore walls has been prepared by a template-directed, evaporation-induced self-assembly spin-coating procedure to create a hybrid POSS-PMO thin film. A 10-fold increase in the porosity of the POSS-PMO film compared to a reference POSS film is achieved by incorporating ∼1.5 nm pores. The increased porosity results in a decrease in the dielectric constant, k, which goes from 2.03 in a reference POSS film to 1.73 in the POSS-PMO film.
Kaneka Corporation, 5-1-1, Torikai-nishi, Settsu, Osaka, Japan 566-0072.
Makoto
M
Seino
Wendong
W
Wang
Jennifer E
JE
Lofgreen
Daniel P
DP
Puzzo
Takao
T
Manabe
Geoffrey A
GA
Ozin
D000388:Air; D015394:Molecular Structure; D017646:Organosilicon Compounds / Q000138:chemical synthesis / Q000737:chemistry*; D010316:Particle Size; D016062:Porosity; D013499:Surface Properties
D017646:Organosilicon Compounds