title: Spin relaxation in InGaN quantum disks in GaN nanowires.
abstract: The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values.
authors: Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States.
authors: Animesh
authors: A
authors: Banerjee
authors: Fatih
authors: F
authors: Doğan
authors: Junseok
authors: J
authors: Heo
authors: Aurelien
authors: A
authors: Manchon
authors: Wei
authors: W
authors: Guo
authors: Pallab
authors: P
authors: Bhattacharya