title: Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching.
abstract: Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.
authors: Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801, United States.
authors: Matt
authors: M
authors: DeJarld
authors: Jae Cheol
authors: JC
authors: Shin
authors: Winston
authors: W
authors: Chern
authors: Debashis
authors: D
authors: Chanda
authors: Karthik
authors: K
authors: Balasundaram
authors: John A
authors: JA
authors: Rogers
authors: Xiuling
authors: X
authors: Li