title: Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications.
abstract: The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide 1-oxide 2-metal stack was provided to accommodate the evolution trend. We show that electroformed W-NbO(x)-Pt  devices can simultaneously exhibit both threshold switching and memory switching. A qualitative model was suggested to elucidate the unique properties in a W-NbO(x)-Pt  stack, where threshold switching is associated with a localized metal-insulator transition in the NbO(x)  bulk, and the bipolar RS derives from a redox at the tip of the localized filament at the WO(x)-NbO(x)  interface. Such a simple metal-oxide-metal structure, with functionally separated bulk and interface effects, provides a fabrication advantage for future high-density cross-point memory devices.
authors: School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea. tjuxjliu@yahoo.com
authors: Xinjun
authors: X
authors: Liu
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authors: Son
authors: Jungho
authors: J
authors: Shin
authors: Jubong
authors: J
authors: Park
authors: Joonmyoung
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