title: High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.
abstract: We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
authors: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398, Suzhou, China. sllu2008@sinano.ac.cn.
authors: Shulong
authors: S
authors: Lu
authors: Lian
authors: L
authors: Ji
authors: Wei
authors: W
authors: He
authors: Pan
authors: P
authors: Dai
authors: Hui
authors: H
authors: Yang
authors: Masayuki
authors: M
authors: Arimochi
authors: Hiroshi
authors: H
authors: Yoshida
authors: Shiro
authors: S
authors: Uchida
authors: Masao
authors: M
authors: Ikeda