title: Near-room-temperature mid-infrared quantum well photodetector.
abstract: We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.
authors: Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada. sean.hinds@nrc-cnrc.gc.ca
authors: Sean
authors: S
authors: Hinds
authors: Margaret
authors: M
authors: Buchanan
authors: Richard
authors: R
authors: Dudek
authors: Sofiane
authors: S
authors: Haffouz
authors: Sylvain
authors: S
authors: Laframboise
authors: Zbigniew
authors: Z
authors: Wasilewski
authors: H C
authors: HC
authors: Liu
mesh_terms: D000042:Absorption; D000535:Aluminum / Q000737:chemistry; D001152:Arsenicals / Q000737:chemistry; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D007259:Infrared Rays; D011789:Quantum Theory; D012666:Semiconductors; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum