title: High output nanogenerator based on assembly of GaN nanowires.
abstract: GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 µA cm⁻². The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA).
authors: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
authors: Long
authors: L
authors: Lin
authors: Chen-Ho
authors: CH
authors: Lai
authors: Youfan
authors: Y
authors: Hu
authors: Yan
authors: Y
authors: Zhang
authors: Xue
authors: X
authors: Wang
authors: Chen
authors: C
authors: Xu
authors: Robert L
authors: RL
authors: Snyder
authors: Lih-J
authors: LJ
authors: Chen
authors: Zhong Lin
authors: ZL
authors: Wang