title: Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
abstract: By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5)  is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
authors: Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USA.
authors: Feng
authors: F
authors: Miao
authors: John Paul
authors: JP
authors: Strachan
authors: J Joshua
authors: JJ
authors: Yang
authors: Min-Xian
authors: MX
authors: Zhang
authors: Ilan
authors: I
authors: Goldfarb
authors: Antonio C
authors: AC
authors: Torrezan
authors: Peter
authors: P
authors: Eschbach
authors: Ronald D
authors: RD
authors: Kelley
authors: Gilberto
authors: G
authors: Medeiros-Ribeiro
authors: R Stanley
authors: RS
authors: Williams
mesh_terms: D004553:Electric Conductivity; D008853:Microscopy; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D010087:Oxides / Q000737:chemistry*; D013057:Spectrum Analysis; D013635:Tantalum / Q000737:chemistry*
chemical_list: D010087:Oxides; D013635:Tantalum; C078151:tantalum oxide