title: n-Doping of organic electronic materials using air-stable organometallics.
abstract: Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10(6)  at 4 V.
authors: School of Chemistry and Biochemistry and Center for Organic, Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, USA.
authors: Song
authors: S
authors: Guo
authors: Sang Bok
authors: SB
authors: Kim
authors: Swagat K
authors: SK
authors: Mohapatra
authors: Yabing
authors: Y
authors: Qi
authors: Tissa
authors: T
authors: Sajoto
authors: Antoine
authors: A
authors: Kahn
authors: Seth R
authors: SR
authors: Marder
authors: Stephen
authors: S
authors: Barlow
mesh_terms: D019281:Dimerization; D004581:Electronics; D004583:Electrons; D058085:Iron Compounds / Q000737:chemistry*; D009942:Organometallic Compounds / Q000737:chemistry*; D012428:Ruthenium / Q000737:chemistry*
chemical_list: D058085:Iron Compounds; D009942:Organometallic Compounds; C058466:rhodocene; D012428:Ruthenium