title: High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.
abstract: The evolution of the dark currents and breakdown at elevated temperatures of up to 450  K are studied using thin AlAsSb avalanche regions. While the dark currents increase rapidly as the temperature is increased, the avalanche gain is shown to only have a weak temperature dependence. Temperature coefficients of breakdown voltage of 0.93 and 1.93  mV/K were obtained from the diodes of 80 and 230  nm avalanche regions (i-regions), respectively. These values are significantly lower than for other available avalanche materials at these temperatures. The wavelength dependence of multiplication characteristics of AlAsSb p-i-n diodes has also been investigated, and it was found that the ionization coefficients for electrons and holes are comparable within the electric field and wavelength ranges measured.
authors: Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK. i.sandall@sheffield.ac.uk
authors: Ian C
authors: IC
authors: Sandall
authors: Shiyu
authors: S
authors: Xie
authors: Jingjing
authors: J
authors: Xie
authors: Chee Hing
authors: CH
authors: Tan