title: High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes.
abstract: Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area.
authors: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Physics and Chemistry of Luminescence, South China University of Technology, Guangzhou 510640, PR China.
authors: Nanliu
authors: N
authors: Liu
authors: Yan
authors: Y
authors: Zhou
authors: Na
authors: N
authors: Ai
authors: Chan
authors: C
authors: Luo
authors: Junbiao
authors: J
authors: Peng
authors: Jian
authors: J
authors: Wang
authors: Jian
authors: J
authors: Pei
authors: Yong
authors: Y
authors: Cao
mesh_terms: D003460:Crystallization; D004566:Electrodes; D004581:Electronics / Q000295:instrumentation / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000032:analysis / Q000737:chemistry*; D011327:Printing / Q000295:instrumentation / Q000379:methods*; D014173:Transistors, Electronic