title: Tunable bandgap in silicene and germanene.
abstract: By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.
authors: State Key Laboratory of Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, PR China.
authors: Zeyuan
authors: Z
authors: Ni
authors: Qihang
authors: Q
authors: Liu
authors: Kechao
authors: K
authors: Tang
authors: Jiaxin
authors: J
authors: Zheng
authors: Jing
authors: J
authors: Zhou
authors: Rui
authors: R
authors: Qin
authors: Zhengxiang
authors: Z
authors: Gao
authors: Dapeng
authors: D
authors: Yu
authors: Jing
authors: J
authors: Lu
mesh_terms: D003198:Computer Simulation; D004553:Electric Conductivity; D004574:Electromagnetic Fields; D005857:Germanium / Q000737:chemistry*; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D005857:Germanium; D012825:Silicon