title: Switching time in optically bistable injection-locked semiconductor lasers.
abstract: Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.
authors: School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73b, 11000 Belgrade, Serbia. gvozdic@etf.rs
authors: Dejan M
authors: DM
authors: Gvozdić
authors: Marko M
authors: MM
authors: Krstić
authors: Jasna V
authors: JV
authors: Crnjanski