title: Minority carrier lifetime and surface effects in VLS-grown axial p-n junction silicon nanowires.
authors: Department of Electrical Engineering and Applied Physics, Yale University, New Haven, CT 06511, USA. yeonwoong.jung@yale.edu
authors: Yeonwoong
authors: Y
authors: Jung
authors: Aleksandar
authors: A
authors: Vacic
authors: Daniel E
authors: DE
authors: Perea
authors: Samuel T
authors: ST
authors: Picraux
authors: Mark A
authors: MA
authors: Reed
mesh_terms: D002384:Catalysis; D006046:Gold; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D006046:Gold; D012825:Silicon