title: Lateral cavity photonic crystal surface-emitting laser with ultralow threshold.
abstract: A lateral cavity photonic crystal (PhC) surface-emitting laser is realized on a commercial epitaxial waveguide wafer without a distributed Bragg reflector first. Energy is coupled from the lateral resonance to surface-emitting light through the Γ band edge of the PhC with a square lattice. Electrically driven 1553.8 nm surface-emitting lasing action is observed at room temperature. The threshold current density of 667 A/cm2 is ultralow for the surface-emitting laser.
authors: Nano-optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. whzheng@semi.ac.cn
authors: Wanhua
authors: W
authors: Zheng
authors: Wenjun
authors: W
authors: Zhou
authors: Yufei
authors: Y
authors: Wang
authors: Anjin
authors: A
authors: Liu
authors: Wei
authors: W
authors: Chen
authors: Hailing
authors: H
authors: Wang
authors: Feiya
authors: F
authors: Fu
authors: Aiyi
authors: A
authors: Qi