title: Graphene gate electrode for MOS structure-based electronic devices.
abstract: We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the quantum mechanical tunneling current from the gate electrode. This concept is applied to nonvolatile Flash memory devices, whose performance is critically affected by the quality of the gate dielectric. Charge-trap flash (CTF) memory with a graphene gate electrode shows superior data retention and program/erase performance that current CTF devices cannot achieve. The findings of this study can lead to new applications of graphene, not only for Flash memory devices but also for other high-performance and mass-producible electronic devices based on MOS structure which is the mainstream of the electronic device industry.
authors: Department of Electrical Engineering, KAIST, 335 Gwahak-ro, Yuseong-gu, Daejeon, Korea, 305-701.
authors: Jong Kyung
authors: JK
authors: Park
authors: Seung Min
authors: SM
authors: Song
authors: Jeong Hun
authors: JH
authors: Mun
authors: Byung Jin
authors: BJ
authors: Cho