title: Binary Pt-Si nanostructures prepared by focused electron-beam-induced deposition.
abstract: Binary systems of Pt-Si are prepared by electron-beam-induced deposition using the two precursors, trimethyl(methylcyclopentadienyl)platinum(IV) (MeCpPt(Me)(3)) and neopentasilane (Si(SiH(3))(4)), simultaneously. By varying the relative flux of the two precursors during deposition, we are able to study composites containing platinum and silicon in different ratios by means of energy-dispersive X-ray spectroscopy, atomic force microscopy, electrical transport measurements, and transmission electron microscopy. The results show strong evidence for the formation of a binary, metastable Pt(2)Si(3) phase, leading to a maximum in the conductivity for a Si/Pt ratio of 3:2.
authors: Physikalisches Institut, Goethe Universität, 60438 Frankfurt am Main, Germany.
authors: Marcel
authors: M
authors: Winhold
authors: Christian H
authors: CH
authors: Schwalb
authors: Fabrizio
authors: F
authors: Porrati
authors: Roland
authors: R
authors: Sachser
authors: Achilleas S
authors: AS
authors: Frangakis
authors: Britta
authors: B
authors: Kämpken
authors: Andreas
authors: A
authors: Terfort
authors: Norbert
authors: N
authors: Auner
authors: Michael
authors: M
authors: Huth
mesh_terms: D004583:Electrons; D004595:Electroplating / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D010316:Particle Size; D010984:Platinum / Q000737:chemistry* / Q000528:radiation effects; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D046911:Macromolecular Substances; D010984:Platinum; D012825:Silicon