title: Nanometre-scale electronics with III-V compound semiconductors.
abstract: For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.
authors.affiliation: Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. alamo@mit.edu
authors.forename: Jesús A
authors.initials: JA
authors.lastname: del Alamo
references.citation: Nat Mater. 2007 Nov;6(11):810-2
references.pmid: 17972935
references.citation: Nano Lett. 2010 Mar 10;10(3):809-12
references.pmid: 20131812
references.citation: Nature. 2010 Nov 11;468(7321):286-9
references.pmid: 21068839
references.citation: Nature. 2011 Nov 16;479(7373):310-6
references.pmid: 22094690