title: Bottom-up photonic crystal lasers.
abstract: The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of ∼625 W/cm2. Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.
authors.affiliation: Department of Electrical Engineering and California NanoSystems Institute, University of California at Los Angeles, Los Angeles, California 90095, United States. ascofield@ucla.edu
authors.forename: Adam C
authors.initials: AC
authors.lastname: Scofield
authors.forename: Se-Heon
authors.initials: SH
authors.lastname: Kim
authors.forename: Joshua N
authors.initials: JN
authors.lastname: Shapiro
authors.forename: Andrew
authors.initials: A
authors.lastname: Lin
authors.forename: Baolai
authors.initials: B
authors.lastname: Liang
authors.forename: Axel
authors.initials: A
authors.lastname: Scherer
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker