title: Low temperature SiC film deposition using trichlorosilane gas and monomethylsilane gas.
abstract: In order to produce silicon carbide thin film through the process entirely at low temperatures, silicon carbide chemical vapor deposition on a silicon wafer surface was performed using trichlorosilane gas and monomethylsilane gas. First, the silicon thin film was formed using trichlorosilane gas at 800 degrees C and was cooled to room temperature in ambient hydrogen, in order to produce hydrogen-terminated silicon surface. Next, monomethylsilane gas was introduced at room temperature to produce silicon carbide thin film. The mirror-like appearance of the film obtained by this process was maintained after the exposure to hydrogen chloride gas at 800 degrees C. Furthermore, very thin Si-C layer was detected at the surface by means of the time-of-flight secondary ion mass spectrometry. Thus, the silicon carbide thin film was concluded to be formed through the process at temperatures below 800 degrees C.
authors.affiliation: Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan.
authors.forename: Hitoshi
authors.initials: H
authors.lastname: Habuka
authors.forename: Yusuke
authors.initials: Y
authors.lastname: Ando