title: Nitrogen-doped graphene: efficient growth, structure, and electronic properties.
abstract: A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 80% of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of ∼8×10(12) electrons per cm2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoemission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.
authors.affiliation: St. Petersburg State University, St. Petersburg, 198504, Russia. usachov.d@googlemail.com
authors.forename: D
authors.initials: D
authors.lastname: Usachov
authors.forename: O
authors.initials: O
authors.lastname: Vilkov
authors.forename: A
authors.initials: A
authors.lastname: Grüneis
authors.forename: D
authors.initials: D
authors.lastname: Haberer
authors.forename: A
authors.initials: A
authors.lastname: Fedorov
authors.forename: V K
authors.initials: VK
authors.lastname: Adamchuk
authors.forename: A B
authors.initials: AB
authors.lastname: Preobrajenski
authors.forename: P
authors.initials: P
authors.lastname: Dudin
authors.forename: A
authors.initials: A
authors.lastname: Barinov
authors.forename: M
authors.initials: M
authors.lastname: Oehzelt
authors.forename: C
authors.initials: C
authors.lastname: Laubschat
authors.forename: D V
authors.initials: DV
authors.lastname: Vyalikh