title: 50 dB parametric on-chip gain in silicon photonic wires.
abstract: A pulsed mid-infrared pump at λ=2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2 cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (β2) and positive fourth-order (β4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm-2486 nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification >40 dB with an on-chip gain bandwidth wider than 580 nm, as well as narrowband Raman-assisted peak gain >50 dB.
authors.affiliation: Department of Information Technology, Ghent University-imec, Ghent, Belgium.
authors.forename: Bart
authors.initials: B
authors.lastname: Kuyken
authors.forename: Xiaoping
authors.initials: X
authors.lastname: Liu
authors.forename: Günther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Richard M
authors.initials: RM
authors.lastname: Osgood
authors.forename: William M J
authors.initials: WM
authors.lastname: Green