title: A role for graphene in silicon-based semiconductor devices.
abstract: As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Yongin-Si, Gyeonggi-Do 446-712, South Korea. kn_kim@samsung.com
authors.forename: Kinam
authors.initials: K
authors.lastname: Kim
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Choi
authors.forename: Taek
authors.initials: T
authors.lastname: Kim
authors.forename: Seong-Ho
authors.initials: SH
authors.lastname: Cho
authors.forename: Hyun-Jong
authors.initials: HJ
authors.lastname: Chung
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