title: Carburization of Si microwires by chemical vapour deposition.
abstract: We report the elaboration of silicon carbide (SiC) nanostructures thanks to the carburization of silicon microwires (MWs) under methane at high temperature. The produced SiC nanostructures display a tubular shape and are polycrystalline. The as-prepared silicon carbide microtubes (MTs) were characterized and studied by scanning electron microscopy (SEM), dual focused ion beam-scanning electron microscope (FIB-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy. The formation of microtubes can be explained by the out-diffusion of Si through the SiC during the carburization process.
authors.affiliation: Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France.
authors.forename: M
authors.initials: M
authors.lastname: Ollivier
authors.forename: L
authors.initials: L
authors.lastname: Latu-Romain
authors.forename: A
authors.initials: A
authors.lastname: Mantoux
authors.forename: E
authors.initials: E
authors.lastname: Bano
authors.forename: T
authors.initials: T
authors.lastname: Baron