title: SiGe epitaxy on a 300 mm batch furnace.
abstract: This work reports the feasibility of silicon and silicon germanium epitaxy using an ASM A412(TMa) LPCVD all quartz, hot wall, vertical batch furnace reactor using 100 wafer product loads. The very same furnace can be used for 25 wafer and 200 wafer load size, without any hardware changes, dependant on production needs. Following this approach a significant cost reduction for epitaxy in 300 mm high volume manufacturing is possible and enables new applications. The native oxide of the substrate was removed by wet chemical cleaning with time coupling of less than 1 h and subsequent in-situ low pressure hydrogen anneal prior to Si or SiGe deposition. The epitaxial layers were grown using silane and germane. The Si and SiGe layers have been characterized with ToFSIMS, XRD, Raman, AFM and TEM confirming excellent crystalline quality, layer thickness and within wafer SiGe stoichiometry uniformity.
authors.affiliation: Fraunhofer-Center Nanoelektronische Technologien, Königsbrücker Str. 180, 01099 Dresden, Germany.
authors.forename: Andreas
authors.initials: A
authors.lastname: Naumann
authors.forename: Jonas
authors.initials: J
authors.lastname: Sundqvist
authors.forename: Marcel
authors.initials: M
authors.lastname: Ogiewa
authors.forename: Laurent
authors.initials: L
authors.lastname: Boitier
authors.forename: Malte
authors.initials: M
authors.lastname: Czernohorsky
authors.forename: Stefan
authors.initials: S
authors.lastname: Sienz
authors.forename: Guido
authors.initials: G
authors.lastname: Probst
authors.forename: Bert
authors.initials: B
authors.lastname: Jongbloed
authors.forename: Sjaak
authors.initials: S
authors.lastname: Beulens
authors.forename: Jan Willem
authors.initials: JW
authors.lastname: Maes
authors.forename: Shawn
authors.initials: S
authors.lastname: Thomas