title: Effects of interfacial layer on characteristics of TiN/ZrO2 structures.
abstract: To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TiN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TiN oxidation and a seed layer of ZrO2 growth.
authors.affiliation: Process Development Team, Semiconductor R&D Center, Samsung Electronics, Ltd., San #16 Banwol-Dong, Hwaseong-City, Gyeonggi-Do, 445-701, Korea.
authors.forename: Younsoo
authors.initials: Y
authors.lastname: Kim
authors.forename: Sang Yeol
authors.initials: SY
authors.lastname: Kang
authors.forename: Jae Hyoung
authors.initials: JH
authors.lastname: Choi
authors.forename: Jae Soon
authors.initials: JS
authors.lastname: Lim
authors.forename: Min Young
authors.initials: MY
authors.lastname: Park
authors.forename: Suk-Jin
authors.initials: SJ
authors.lastname: Chung
authors.forename: Jaegwan
authors.initials: J
authors.lastname: Chung
authors.forename: Hyung Ik
authors.initials: HI
authors.lastname: Lee
authors.forename: Ki Hong
authors.initials: KH
authors.lastname: Kim
authors.forename: Yong Koo
authors.initials: YK
authors.lastname: Kyoung
authors.forename: Sung
authors.initials: S
authors.lastname: Heo
authors.forename: Cha Young
authors.initials: CY
authors.lastname: Yoo
authors.forename: Ho-Kyu
authors.initials: HK
authors.lastname: Kang