title: Growth of TiO2 with thermal and plasma enhanced atomic layer deposition.
abstract: We show a comparative study of the TiO2 ALD with TTIP and either O2 or O2-plasma on Si/SiO2 substrates. In particular we compare the surface morphology and crystalline phase by means of Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS) for different O2-plasma procedures upon changing the time between cycles and the N2-purging pressure. The AFM images show that already these parameters may induce structural changes in the TiO2 films grown by ALD, with the formation of crystallites with average lateral width varying between 15 and 80 nm. By means of XAS we also found that the crystallites have mixed anatase and rutile crystalline phases and that smaller crystallites have a greater rutile component than the larger ones.
authors.affiliation: Brandenburg University of Technology, Konrad Wachsmann Allee, 17, 03046, Cottbus, Germany.
authors.forename: Massimo
authors.initials: M
authors.lastname: Tallarida
authors.forename: Daniel
authors.initials: D
authors.lastname: Friedrich
authors.forename: Matthias
authors.initials: M
authors.lastname: Städter
authors.forename: Marcel
authors.initials: M
authors.lastname: Michling
authors.forename: Dieter
authors.initials: D
authors.lastname: Schmeisser