title: Contact resistance and megahertz operation of aggressively scaled organic transistors.
abstract: Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10(7) ; intrinsic mobility: 3 cm(2)  (V s)(-1) ) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed.
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
authors.forename: Frederik
authors.initials: F
authors.lastname: Ante
authors.forename: Daniel
authors.initials: D
authors.lastname: Kälblein
authors.forename: Tarek
authors.initials: T
authors.lastname: Zaki
authors.forename: Ute
authors.initials: U
authors.lastname: Zschieschang
authors.forename: Kazuo
authors.initials: K
authors.lastname: Takimiya
authors.forename: Masaaki
authors.initials: M
authors.lastname: Ikeda
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Sekitani
authors.forename: Takao
authors.initials: T
authors.lastname: Someya
authors.forename: Joachim N
authors.initials: JN
authors.lastname: Burghartz
authors.forename: Klaus
authors.initials: K
authors.lastname: Kern
authors.forename: Hagen
authors.initials: H
authors.lastname: Klauk