title: Sub-nanosecond switching of a tantalum oxide memristor.
abstract: We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.
authors.affiliation: Nanoelectronics Research Group, Hewlett-Packard Labs, 1501 Page Mill Road, Palo Alto, CA 94304, USA. antonio.torrezan@hp.com
authors.forename: Antonio C
authors.initials: AC
authors.lastname: Torrezan
authors.forename: John Paul
authors.initials: JP
authors.lastname: Strachan
authors.forename: Gilberto
authors.initials: G
authors.lastname: Medeiros-Ribeiro
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams