title: Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2).
abstract: The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .
authors: Department of Polymer Science and Engineering, University of Massachusetts, Amherst, 01003, USA.
authors: Ji
authors: J
authors: Xu
authors: Sung Woo
authors: SW
authors: Hong
authors: Weiyin
authors: W
authors: Gu
authors: Kim Y
authors: KY
authors: Lee
authors: David S
authors: DS
authors: Kuo
authors: Shuaigang
authors: S
authors: Xiao
authors: Thomas P
authors: TP
authors: Russell
mesh_terms: D019342:Acetic Acid / Q000737:chemistry; D008422:Materials Testing; D018625:Microscopy, Atomic Force / Q000379:methods; D008855:Microscopy, Electron, Scanning / Q000379:methods; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D012492:Salts / Q000737:chemistry; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D012997:Solvents / Q000737:chemistry; D013499:Surface Properties; D013696:Temperature
chemical_list: D011108:Polymers; D011137:Polystyrenes; D012492:Salts; D012997:Solvents; D012822:Silicon Dioxide; D019342:Acetic Acid; D012825:Silicon