title: Electrical transport properties of CuS single crystals.
abstract: Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.
authors: Departamento de Química, Instituto Tecnológico e Nuclear/CFMC-UL, P-2686-953 Sacavém, Portugal. amcasaca@deea.isel.pt
authors: A
authors: A
authors: Casaca
authors: E B
authors: EB
authors: Lopes
authors: A P
authors: AP
authors: Gonçalves
authors: M
authors: M
authors: Almeida