title: Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection.
abstract: Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.
authors: Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.
authors: Feng-Wen
authors: FW
authors: Huang
authors: Jinn-Kong
authors: JK
authors: Sheu
authors: Ming-Lun
authors: ML
authors: Lee
authors: Shang-Ju
authors: SJ
authors: Tu
authors: Wei-Chih
authors: WC
authors: Lai
authors: Wen-Che
authors: WC
authors: Tsai
authors: Wen-Hao
authors: WH
authors: Chang