title: Nonvolatile-memory characteristics of SiC nanocrystals with variable oxide thickness and crested tunnel barriers.
abstract: The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/- 13 V bias voltage was applied for 500 ms, the threshold voltage shifts of the SiC-nanocrystal-embedded memory devices with ONO and NON tunnel barriers were about 2.4 V. The operation speeds of the memories with ONO and NON tunnel barriers under the +/- 10 V applied pulse bias were approximately 5 and 20 ms, respectively. The field sensitivity of the ONO tunnel barrier was higher than that of the NON tunnel barrier during electron injection. The tunneling efficiency during the programming/erasing processes could be improved by the engineered tunnel barrier layer. Therefore, the SiC-nanocrystal-embedded memory device with an ONO tunnel barrier can be applied to nonvolatile-memory devices.
authors: Department of Physics and Research Institute for Natural Scieneces, Hanyang University, Seoul 133-791, Korea.
authors: Dong Seok
authors: DS
authors: Han
authors: Dong Uk
authors: DU
authors: Lee
authors: Hyo Jun
authors: HJ
authors: Lee
authors: Eun Kyu
authors: EK
authors: Kim
authors: Hee-Wook
authors: HW
authors: You
authors: Won-Ju
authors: WJ
authors: Cho