title: Construction of graphdiyne nanowires with high-conductivity and mobility.
abstract: GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 10(3) S m(-1) and a mobility of 7.1 × 10(2) cm(2) V(-1) s(-1) at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications.
authors: CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors: Xuemin
authors: X
authors: Qian
authors: Zhiyuan
authors: Z
authors: Ning
authors: Yuliang
authors: Y
authors: Li
authors: Huibiao
authors: H
authors: Liu
authors: Canbin
authors: C
authors: Ouyang
authors: Qing
authors: Q
authors: Chen
authors: Yongjun
authors: Y
authors: Li