title: Room-temperature quantum confinement effects in transport properties of ultrathin Si nanowire field-effect transistors.
abstract: Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.
authors: Department of Material Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States. ksyi@pusan.ac.kr
authors: Kyung Soo
authors: KS
authors: Yi
authors: Krutarth
authors: K
authors: Trivedi
authors: Herman C
authors: HC
authors: Floresca
authors: Hyungsang
authors: H
authors: Yuk
authors: Walter
authors: W
authors: Hu
authors: Moon J
authors: MJ
authors: Kim