title: High-density magnetoresistive random access memory operating at ultralow voltage at             room temperature.
abstract: The main bottlenecks limiting the practical applications of current magnetoresistive                 random access memory (MRAM) technology are its low storage density and high writing                 energy consumption. Although a number of proposals have been reported for                 voltage-controlled memory device in recent years, none of them simultaneously                 satisfy the important device attributes: high storage capacity, low power                 consumption and room temperature operation. Here we present, using phase-field                 simulations, a simple and new pathway towards high-performance MRAMs that display                 significant improvements over existing MRAM technologies or proposed concepts. The                 proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of                 up to 88 Gb inch(-2), ultralow power                 dissipation as low as 0.16 fJ per bit and room temperature high-speed                 operation below 10 ns.
authors: Department of Materials Science and Engineering, and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
authors: Jia-Mian
authors: JM
authors: Hu
authors: Zheng
authors: Z
authors: Li
authors: Long-Qing
authors: LQ
authors: Chen
authors: Ce-Wen
authors: CW
authors: Nan