title: Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency.
abstract: Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k·p equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA. wwchow@sandia.gov
authors: Weng W
authors: WW
authors: Chow