title: Note: fast and reliable fracture strain extraction technique applied to silicon at nanometer scale.
abstract: Simple fabrication process and extraction procedure to determine the fracture strain of monocrystalline silicon are demonstrated. Nanowires/nanoribbons in silicon are fabricated and subjected to uniaxial tensile stress along the complete length of the beams. Large strains up to 5% are measured for nanowires presenting a cross section of 50 nm × 50 nm and a length of 2.5 μm. An increase in fracture strain for silicon nanowires (NWs) with the downscaling of their volume is observed, highlighting the reduction of the defects probability as volume is decreased.
authors: Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Place du Levant, 3, 1348 Louvain-la-Neuve, Belgium. vikram.passi@isen.iemn.univ-lille1.fr
authors: Vikram
authors: V
authors: Passi
authors: Umesh
authors: U
authors: Bhaskar
authors: Thomas
authors: T
authors: Pardoen
authors: Ulf
authors: U
authors: Sodervall
authors: Bengt
authors: B
authors: Nilsson
authors: Goran
authors: G
authors: Petersson
authors: Mats
authors: M
authors: Hagberg
authors: Jean-Pierre
authors: JP
authors: Raskin