title: Manipulating InAs nanowires with submicrometer precision.
abstract: InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.
authors: II. Institute of Physics B and JARA-FIT, RWTH Aachen, 52074 Aachen, Germany. floehr@physik.rwth-aachen.de
authors: Kilian
authors: K
authors: Flöhr
authors: Marcus
authors: M
authors: Liebmann
authors: Kamil
authors: K
authors: Sladek
authors: H Yusuf
authors: HY
authors: Günel
authors: Robert
authors: R
authors: Frielinghaus
authors: Fabian
authors: F
authors: Haas
authors: Carola
authors: C
authors: Meyer
authors: Hilde
authors: H
authors: Hardtdegen
authors: Thomas
authors: T
authors: Schäpers
authors: Detlev
authors: D
authors: Grützmacher
authors: Markus
authors: M
authors: Morgenstern