title: Growth of TiO2 anti-reflection layer on textured Si (100) wafer substrate by metal-organic chemical vapor deposition method.
abstract: Recently anti-reflective films (AR) have been intensely studied. Particularly for textured silicon solar cells, the AR films can further reduce the reflection of the incident light through trapping the incident light into the cells. In this work, TiO2 anti-reflection films have been grown on the textured Si (100) substrate which is processed in two steps, and the films are deposited using metal-organic chemical vapor deposition (MOCVD) with a precursor of titanium tetra-isopropoxide (TTIP). The effect of the substrate texture and the growth conditions of TiO2 films on the reflectance has been investigated. Pyramid size of textured silicon had approximately 2-9 microm. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at 600 degrees C using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and 1000 degrees C, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about 75 +/- 5 nm. The reflectance at specific wavelength can be reduced to 3% in optimum layer.
authors: Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Sang-Hun
authors: SH
authors: Nam
authors: Jin-Woo
authors: JW
authors: Choi
authors: Sang-Jin
authors: SJ
authors: Cho
authors: Keun Soo
authors: KS
authors: Kimt
authors: Jin-Hyo
authors: JH
authors: Boo