title: Fabrication and radio frequency characterization of carbon nanotube field effect transistor: evidence of quantum capacitance.
abstract: We fabricated an radio frequency (RF) carbon nanotube field effect transistor (CNTFET) whose electrode shapes were standard RF designed ground-signal-ground (GSG)-type pads. The S-parameters measured from our RF CNTFET in the frequency range up to 6 GHz were fitted with an RF equivalent circuit, and the extracted gate capacitance was shown to be the capacitance value of the series combination of the electrostatic capacitance and the quantum capacitance. The effect of the channel resistance and the kinetic inductance was also discussed.
authors: Research Center for Time-domain Nano-functional Devices and School of Electrical Engineering, Korea University, 5-1 Anam, Sungbuk, Seoul 136-701, South Korea.
authors: D H
authors: DH
authors: Hwang
authors: M G
authors: MG
authors: Kang
authors: T G
authors: TG
authors: Kim
authors: J S
authors: JS
authors: Hwang
authors: D W
authors: DW
authors: Kim
authors: D
authors: D
authors: Whang
authors: S W
authors: SW
authors: Hwang