title: Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.
abstract: Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film.
authors: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Jeong-Hoon
authors: JH
authors: Lee
authors: Kwan-Woo
authors: KW
authors: Song
authors: Min-Ho
authors: MH
authors: Park
authors: Hyung-Kyu
authors: HK
authors: Kim
authors: Cheol-Woong
authors: CW
authors: Yang