title: Large-scale solution-phase growth of Cu-doped ZnO nanowire networks.
abstract: Film-like networks of Cu-doped (0.8-2.5 at.%) ZnO nanowires were successfully synthesized through a facile solution process at a low temperature (<100 degrees C). The pH value of solution plays a key role in controlling the density and quality of the Cu-doped ZnO nanowires and the dopant concentration of ZnO nanowires was controlled by adjusting the Cu2+/Zn2+ concentration ratio during the synthesis. The structural study showed that the as-prepared Cu-doped ZnO nanowires with a narrow diameter range of 20-30 nm were single crystal and grew along [0001] direction. Photoluminescence and electrical conductivity measurements showed that Cu doping can lead to a redshift in bandgap energy and an increase in the resistivity of ZnO. The thermal annealing of the as-grown nanowires at a low temperature (300 degrees C) decreased the defect-related emission within the visible range and increased the electrical conductivity. The high-quality ZnO nanowire network with controlled doping will enable further application to flexible and transparent electronics.
authors: School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Chunju
authors: C
authors: Xu
authors: Tae-Woong
authors: TW
authors: Koo
authors: Byung-Sung
authors: BS
authors: Kim
authors: Jae-Hyun
authors: JH
authors: Lee
authors: Sung Woo
authors: SW
authors: Hwang
authors: Dongmok
authors: D
authors: Whang