title: Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode.
abstract: We report GaN-based near ultraviolet (UV) light emitting diode (LED) that combines indium tin oxide (ITO) nanodot nodes with two-dimensional graphene film as a UV-transparent current spreading electrode (TCSE) to give rise to excellent UV emission efficiency. The light output power of 380 nm emitting UV-LEDs with graphene film on ITO nanodot nodes as TCSE was enhanced remarkably compared to conventional TCSE. The increase of the light output power is attributed to high UV transmittance of graphene, effective current spreading and injection, and texturing effect by ITO nanodots.
authors: School of Semiconductor and Chemical Engineering & Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea.
authors: Tae Hoon
authors: TH
authors: Seo
authors: Kang Jea
authors: KJ
authors: Lee
authors: Ah Hyun
authors: AH
authors: Park
authors: Chang-Hee
authors: CH
authors: Hong
authors: Eun-Kyung
authors: EK
authors: Suh
authors: Seung Jin
authors: SJ
authors: Chae
authors: Young Hee
authors: YH
authors: Lee
authors: Tran Viet
authors: TV
authors: Cuong
authors: Viet Hung
authors: VH
authors: Pham
authors: Jin Suk
authors: JS
authors: Chung
authors: Eui Jung
authors: EJ
authors: Kim
authors: Seong-Ran
authors: SR
authors: Jeon