title: Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited].
abstract: A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.
authors: JILA, National Institute of Standards and Technology and the University of Colorado, Boulder, CO 80309-0440, USA.
authors: J K
authors: JK
authors: Wahlstrand
authors: H
authors: H
authors: Zhang
authors: S B
authors: SB
authors: Choi
authors: J E
authors: JE
authors: Sipe
authors: S T
authors: ST
authors: Cundiff