title: Photoinduced desorption of Xe from porous Si following ultraviolet irradiation: evidence for a selective and highly effective optical activity.
abstract: Photoinduced desorption (PID) of Xe from porous silicon (PSi) following UV irradiation has been studied. A nonthermal, morphology, and wavelength dependent phenomenon with more than 3 orders of magnitude enhancement of Xe PID within pores over atoms adsorbed on top of flat surfaces has been recorded, displaying extraordinary large cross sections up to σ(Xe/PSi)=2×10(-15)  cm(2). A long-lived, photoinduced, charge separated silicon-xenon complex is proposed as the precursor for this remarkable photodesorption process.
authors: Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem, Israel.
authors: Gil
authors: G
authors: Toker
authors: Micha
authors: M
authors: Asscher