title: Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.
abstract: A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.
authors: Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA.
authors: H T
authors: HT
authors: Yi
authors: Y
authors: Y
authors: Chen
authors: K
authors: K
authors: Czelen
authors: V
authors: V
authors: Podzorov
mesh_terms: D003460:Crystallization; D004566:Electrodes; D004583:Electrons; D004867:Equipment Design; D005898:Glass; D008422:Materials Testing; D053758:Nanoparticles / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D009930:Organic Chemicals / Q000737:chemistry; D011093:Polyethylene Terephthalates / Q000737:chemistry; D011108:Polymers / Q000737:chemistry; D012834:Silver / Q000737:chemistry; D013499:Surface Properties; D014173:Transistors, Electronic; D014992:Xylenes / Q000737:chemistry
chemical_list: D009930:Organic Chemicals; D011093:Polyethylene Terephthalates; D011108:Polymers; D014992:Xylenes; C011055:parylene; D012834:Silver