title: Reentrant ν=1 quantum Hall state in a two-dimensional hole system.
abstract: We report the observation of a reentrant quantum Hall state at the Landau level filling factor ν=1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the ν=1 quantum Hall state in the presence of a parallel magnetic field component B(∥), followed by a strengthening and reemergence as B(∥) is further increased. The robustness of the ν=1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B(∥) needed to invoke the transition increases with the total density of the system.
authors: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors: A L
authors: AL
authors: Graninger
authors: D
authors: D
authors: Kamburov
authors: M
authors: M
authors: Shayegan
authors: L N
authors: LN
authors: Pfeiffer
authors: K W
authors: KW
authors: West
authors: K W
authors: KW
authors: Baldwin
authors: R
authors: R
authors: Winkler