title: High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.
abstract: High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.
authors: Physics Department, Lancaster University, Lancaster, LA1 4YB, UK. a.r.marshall@lancaster.ac.uk
authors: Andrew R J
authors: AR
authors: Marshall
authors: Pin Jern
authors: PJ
authors: Ker
authors: Andrey
authors: A
authors: Krysa
authors: John P R
authors: JP
authors: David
authors: Chee Hing
authors: CH
authors: Tan