title: Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells.
abstract: Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.
authors: Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. wfzhang@henu.edu.cn.
authors: Xianwen
authors: X
authors: Sun
authors: Guoqiang
authors: G
authors: Li
authors: Li
authors: L
authors: Chen
authors: Zihong
authors: Z
authors: Shi
authors: Weifeng
authors: W
authors: Zhang