title: The effects of nanometal-induced crystallization on the electrical characteristics of bottom-gate poly-Si thin-film transistors.
abstract: The effects of active layer thickness and device dimensions on nanometal-induced crystallization (nano-MIC) were studied to determine the electrical characteristics of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with bottom-gate structures. The nano-MIC poly-Si film was obtained via deposition of a 0.4-nm-thick Ni film on the amorphous silicon layer and subsequent annealing at 550 degrees C for 0.5 to 8 h. The EDS revealed a approximately 0.1% Ni concentration in the poly-Si film. The cross-sectional TEM image shows the vertical-grain growth mechanism, where the bottom side of the grain exhibits a larger crytalline area than the top side. Therefore, the field effect mobility of the bottom-gate poly-Si TFTs increases with increased active-amorphous-silicon (a-Si) thickness. Furthermore, the mobility increases when the device dimensions are scaled down. A mechanism for explaining such phenomenon in relation to the nano-MIC bottom-gate poly-Si TFTs was also proposed.
authors: Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors: I-Che
authors: IC
authors: Lee
authors: Po-Yu
authors: PY
authors: Yang
authors: Ming-Jhe
authors: MJ
authors: Hu
authors: Jyh-Liang
authors: JL
authors: Wang
authors: Chun-Chien
authors: CC
authors: Tsai
authors: Chia-Tsung
authors: CT
authors: Chang
authors: Huang-Chung
authors: HC
authors: Cheng