title: Impact of dispersion profiles of silicon waveguides on optical parametric amplification in the femtosecond regime.
abstract: The impact of dispersion profiles of silicon waveguides on femtosecond optical parametric amplification (OPA) is theoretically investigated. It is found that flat quasi-phase-matching, smooth temporal profiles and separable spectra for 200 fs pulses can be obtained by tailoring the cross-section of silicon rib waveguide. We achieve on-chip parametric gain as high as 26.8 dB and idler conversion gain of 25.6 dB for a low pump peak power over a flat bandwidth of 400 nm in a 10-mm-long dispersion engineered silicon waveguide. Our on-chip OPA can find important potential applications in highly integrated optical circuits for all-optical ultrafast signal processing.
authors: State Key Laboratory of Transient Optics and Photonics Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Science (CAS), Xi'an, 710119, China.
authors: Zhaolu
authors: Z
authors: Wang
authors: Hongjun
authors: H
authors: Liu
authors: Nan
authors: N
authors: Huang
authors: Qibing
authors: Q
authors: Sun
authors: Jin
authors: J
authors: Wen
mesh_terms: D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon