title: Catalyst incorporation at defects during nanowire growth.
abstract: Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in <110> oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in <112> oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.
authors: Department of Materials Science and Engineering, Northwestern University, 1881 Sheridan Road, Evanston, Illinois 60208, USA.
authors: Eric R
authors: ER
authors: Hemesath
authors: Daniel K
authors: DK
authors: Schreiber
authors: Emine B
authors: EB
authors: Gulsoy
authors: Christian F
authors: CF
authors: Kisielowski
authors: Amanda K
authors: AK
authors: Petford-Long
authors: Peter W
authors: PW
authors: Voorhees
authors: Lincoln J
authors: LJ
authors: Lauhon
mesh_terms: D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D006046:Gold / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D006046:Gold; D012825:Silicon