title: Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.
abstract: 380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO2) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO2 nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO2 nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO2 nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.
authors: Interdisciplinary Program of Photonics Engineering, Chonnam National University, Gwangju 500-757, Korea.
authors: Kwang Sun
authors: KS
authors: Baek
authors: Karthikeyan Giri
authors: KG
authors: Sadasivam
authors: Young Gon
authors: YG
authors: Lee
authors: Young Ho
authors: YH
authors: Song
authors: Tak
authors: T
authors: Jeong
authors: Seung Hwan
authors: SH
authors: Kim
authors: Jae Kwan
authors: JK
authors: Kim
authors: Seung Hwan
authors: SH
authors: Kim
authors: Seong-Ran
authors: SR
authors: Jeon
authors: June Key
authors: JK
authors: Lee