title: Characterization of an organic field-effect thin-film transistor in operation using fluorescence-yield x-ray absorption spectroscopy.
abstract: In situ element-specific observation of electronic states of organic films beneath metal electrodes is achieved by x-ray absorption spectroscopy (XAS) in the bulk-sensitive fluorescence-yield (FY) mode. The molecular orientation in Au-covered oligo-thiophene films is confirmed by the C K-edge FY-XAS spectra and the applied bias dependence of the spectra is successfully detected for the first time. The present method can give deeper insights into the electronic-state investigation of various real-device systems under operational conditions.
authors: RIKEN (The Institute of Physical and Chemical Research), Wako, Saitama 351-0198, Japan.
authors: Hiroyuki S
authors: HS
authors: Kato
authors: Hiroyuki
authors: H
authors: Yamane
authors: Nobuhiro
authors: N
authors: Kosugi
authors: Maki
authors: M
authors: Kawai