title: Valence state-dependent ferromagnetism in Mn-doped NiO thin films.
abstract: Manipulating the ferromagnetism of diluted magnetic semiconductors by tuning the valence state of doped ions is found to be achievable in Mn-doped NiO. First-principles calculations predict that the interactions between substitutional Mn(3+) ions in NiO are ferromagnetic, while the Mn(2+)-Mn(2+) interactions are antiferromagnetic. This scenario is experimentally supported by a great enhancement of saturation magnetization with increased Mn(3+)/Mn(2+) ratio in Mn-doped and (Mn, Li)-codoped NiO.
authors: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China. ywsh2000@ustc.edu.cn.
authors: Wensheng
authors: W
authors: Yan
authors: Zhihu
authors: Z
authors: Sun
authors: Zhongrui
authors: Z
authors: Li
authors: Qinghua
authors: Q
authors: Liu
authors: Tao
authors: T
authors: Yao
authors: Zhiyun
authors: Z
authors: Pan
authors: Chao
authors: C
authors: Wang
authors: Fengchun
authors: F
authors: Hu
authors: Yong
authors: Y
authors: Jiang
authors: Zeming
authors: Z
authors: Qi
authors: Fei
authors: F
authors: Zeng
authors: Shiqiang
authors: S
authors: Wei
mesh_terms: D059346:Magnets / Q000737:chemistry*; D008345:Manganese / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D009532:Nickel / Q000737:chemistry*
chemical_list: D008345:Manganese; D009532:Nickel; C028007:nickel monoxide