title: Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.
abstract: The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.
authors: Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, South Korea.
authors: Jaehui
authors: J
authors: Ahn
authors: Michael A
authors: MA
authors: Mastro
authors: Paul B
authors: PB
authors: Klein
authors: Jennifer K
authors: JK
authors: Hite
authors: Boris
authors: B
authors: Feigelson
authors: Charles R
authors: CR
authors: Eddy
authors: Jihyun
authors: J
authors: Kim
mesh_terms: D005708:Gallium / Q000737:chemistry*; D008027:Light; D008853:Microscopy; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D012825:Silicon / Q000737:chemistry*; D013057:Spectrum Analysis
chemical_list: D005708:Gallium; C027235:gallium nitrate; D012825:Silicon