title: Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode.
abstract: An Au-Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p-n junction. The results show that the Schottky diode had a higher I(sc) and harder radiation tolerance but lower V(oc) than the p-n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries.
authors: Institute of Nuclear Science and Technology, Sichuan University, Chengdu, China.
authors: Yebing
authors: Y
authors: Liu
authors: Rui
authors: R
authors: Hu
authors: Yuqing
authors: Y
authors: Yang
authors: Guanquan
authors: G
authors: Wang
authors: Shunzhong
authors: S
authors: Luo
authors: Ning
authors: N
authors: Liu