title: Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes.
abstract: Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.
authors: Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Rd, Charlottesville, Virginia 22903, USA.
authors: Qiugui
authors: Q
authors: Zhou
authors: Dion C
authors: DC
authors: McIntosh
authors: Yaojia
authors: Y
authors: Chen
authors: Wenlu
authors: W
authors: Sun
authors: Zhi
authors: Z
authors: Li
authors: Joe C
authors: JC
authors: Campbell
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D054118:Nanospheres / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D010781:Photography / Q000379:methods; D010783:Photometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide