title: Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor.
abstract: In this paper, we discuss on the optimal design of a High-Side n-channel Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET) whose breakdown voltage is over 100 V with 0.35 microm Bipolar-CMOS-DMOS (BCD) process. The proposed nLDMOSFET has been fabricated and tested in order to confirm the features of a deep N+ sinker and a gap of between the drift region (DEEP N-WELL) and the center of the source. The surface is implanted by the N-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side LDMOS exhibits BVdss of 115 V and Ron,sp of as low as 2.20 m ohms cm2, which is consistent with the experimental results.
authors: Department of Electrical Engineering, School of Engineering, Inha University, Incheon 402-751, Korea.
authors: Kunsik
authors: K
authors: Sung
authors: Taeyoung
authors: T
authors: Won