title: Metal-induced crystallization of amorphous Si thin films assisted by atomic layer deposition of nickel oxide layers.
abstract: Atomic layer deposition (ALD) of nickel oxide was applied to the nickel-induced crystallization of amorphous Si thin films. The nickel-induced crystallization was monitored as a function of annealing temperature and time using Raman spectroscopy. Since Raman spectroscopy allows for the numerical quantification of structural components, the incubation time and the crystallization rates were estimated as functions of the annealing temperature. The spatial locations of a nickel-based species, probably NiSi2, were investigated using X-ray photoelectron spectrometry. The formed NiSi2 seeds appeared to accelerate the crystallization kinetics in amorphous Si thin films deposited onto glass substrates. The ramifications of the atomic layer deposition are discussed with regard to large-panel displays, with special emphasis on the sophisticated control of the catalytic elements, especially nickel.
authors: Department of Mat. Sci. and Eng., Hongik University, Seoul 121-791, Korea.
authors: Byung-Soo
authors: BS
authors: So
authors: Seung-Muk
authors: SM
authors: Bae
authors: Yil-Hwan
authors: YH
authors: You
authors: DaiHui
authors: D
authors: Jo
authors: Sun Sook
authors: SS
authors: Lee
authors: Taek-Mo
authors: TM
authors: Chung
authors: Chang Gyoun
authors: CG
authors: Kim
authors: Ki-Seok
authors: KS
authors: An
authors: Jin-Ha
authors: JH
authors: Hwang