title: Direct measurement of the growth mode of graphene on SiC(0001) and SiC(0001¯).
abstract: We have determined the growth mode of graphene on SiC(0001) and SiC(0001¯) using ultrathin, isotopically labeled Si(13)C "marker layers" grown epitaxially on the Si(12)C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si face and C face), we find that the (13)C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.
authors: IBM Research Division, TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
authors: J B
authors: JB
authors: Hannon
authors: M
authors: M
authors: Copel
authors: R M
authors: RM
authors: Tromp