title: Enhanced thermoelectric power in dual-gated bilayer graphene.
abstract: The thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric-field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at a low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.
authors: Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan.
authors: Chang-Ran
authors: CR
authors: Wang
authors: Wen-Sen
authors: WS
authors: Lu
authors: Lei
authors: L
authors: Hao
authors: Wei-Li
authors: WL
authors: Lee
authors: Ting-Kuo
authors: TK
authors: Lee
authors: Feng
authors: F
authors: Lin
authors: I-Chun
authors: IC
authors: Cheng
authors: Jian-Zhang
authors: JZ
authors: Chen