title: Rashba spin-splitting control at the surface of the topological insulator Bi2Se3.
abstract: The electronic structure of Bi(2)Se(3) is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultrahigh-vacuum conditions, can be overcome via in situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab initio slab calculations reveal that these Rashba states are derived from 5-quintuple-layer quantum-well states. While the K-induced potential gradient enhances the spin splitting, this may be present on pristine surfaces due to the symmetry breaking of the vacuum-solid interface.
authors: Department of Physics & Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z1, Canada.
authors: Z-H
authors: ZH
authors: Zhu
authors: G
authors: G
authors: Levy
authors: B
authors: B
authors: Ludbrook
authors: C N
authors: CN
authors: Veenstra
authors: J A
authors: JA
authors: Rosen
authors: R
authors: R
authors: Comin
authors: D
authors: D
authors: Wong
authors: P
authors: P
authors: Dosanjh
authors: A
authors: A
authors: Ubaldini
authors: P
authors: P
authors: Syers
authors: N P
authors: NP
authors: Butch
authors: J
authors: J
authors: Paglione
authors: I S
authors: IS
authors: Elfimov
authors: A
authors: A
authors: Damascelli