title: Strain-mediated phase control and electrolyte-gating of electron-doped manganites.
abstract: A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.
authors: National Institute of Advanced Industrial, Science and Technology, Tsukuba, Japan. ph.xiang@aist.go.jp
authors: Ping-Hua
authors: PH
authors: Xiang
authors: Shutaro
authors: S
authors: Asanuma
authors: Hiroyuki
authors: H
authors: Yamada
authors: Isao H
authors: IH
authors: Inoue
authors: Hiroshi
authors: H
authors: Sato
authors: Hiroshi
authors: H
authors: Akoh
authors: Akihito
authors: A
authors: Sawa
authors: Kazunori
authors: K
authors: Ueno
authors: Hongtao
authors: H
authors: Yuan
authors: Hidekazu
authors: H
authors: Shimotani
authors: Masashi
authors: M
authors: Kawasaki
authors: Yoshihiro
authors: Y
authors: Iwasa
mesh_terms: D004573:Electrolytes; D004581:Electronics; D004583:Electrons; D004867:Equipment Design; D008280:Magnetics; D017895:Manganese Compounds / Q000737:chemistry*; D008422:Materials Testing; D008670:Metals / Q000737:chemistry; D018625:Microscopy, Atomic Force / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation; D011312:Pressure; D013696:Temperature; D014173:Transistors, Electronic; D014961:X-Ray Diffraction
chemical_list: D004573:Electrolytes; D017895:Manganese Compounds; D008670:Metals; C494384:manganite