title: Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.
abstract: In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.
authors: Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon, 305-764, Korea.
authors: Hong-Sik
authors: HS
authors: Shin
authors: Se-Kyung
authors: SK
authors: Oh
authors: Min-Ho
authors: MH
authors: Kang
authors: Shi-Guang
authors: SG
authors: Li
authors: Ga-Won
authors: GW
authors: Lee
authors: Hi-Deok
authors: HD
authors: Lee