title: Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.
abstract: The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.
authors: Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P, O, Box 912, Beijing, 100083, People's Republic of China. zhang_yang@semi.ac.cn.
authors: Yang
authors: Y
authors: Zhang
authors: Min
authors: M
authors: Guan
authors: Xingfang
authors: X
authors: Liu
authors: Yiping
authors: Y
authors: Zeng