title: 3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing.
abstract: We have performed three-dimensional characterization of the TPA effective laser spot size in silicon using an integrated knife-edge sensor. The TPA-induced response of a CMOS integrated circuit is analyzed based on these results and compared to simulation; we have found that the charge injection capacity in IC's active layer could be influenced by irradiance energy and focus depth.
authors: IMS, University of Bordeaux, 351 Cours de la libération, 33405 Talence cedex, France.
authors: K
authors: K
authors: Shao
authors: A
authors: A
authors: Morisset
authors: V
authors: V
authors: Pouget
authors: E
authors: E
authors: Faraud
authors: C
authors: C
authors: Larue
authors: D
authors: D
authors: Lewis
authors: D
authors: D
authors: McMorrow