title: Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.
abstract: Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.
authors: Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors: Ki Kang
authors: KK
authors: Kim
authors: Allen
authors: A
authors: Hsu
authors: Xiaoting
authors: X
authors: Jia
authors: Soo Min
authors: SM
authors: Kim
authors: Yumeng
authors: Y
authors: Shi
authors: Mario
authors: M
authors: Hofmann
authors: Daniel
authors: D
authors: Nezich
authors: Joaquin F
authors: JF
authors: Rodriguez-Nieva
authors: Mildred
authors: M
authors: Dresselhaus
authors: Tomas
authors: T
authors: Palacios
authors: Jing
authors: J
authors: Kong
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D003300:Copper / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D001896:Boron Compounds; D005740:Gases; D046911:Macromolecular Substances; D008567:Membranes, Artificial; C017282:boron nitride; D003300:Copper