title: Single-gate bandgap opening of bilayer graphene by dual molecular doping.
abstract: Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
authors.affiliation: Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: Jaesung
authors.initials: J
authors.lastname: Park
authors.forename: Sae Byeok
authors.initials: SB
authors.lastname: Jo
authors.forename: Young-Jun
authors.initials: YJ
authors.lastname: Yu
authors.forename: Youngsoo
authors.initials: Y
authors.lastname: Kim
authors.forename: Jae Won
authors.initials: JW
authors.lastname: Yang
authors.forename: Wi Hyoung
authors.initials: WH
authors.lastname: Lee
authors.forename: Hyun Ho
authors.initials: HH
authors.lastname: Kim
authors.forename: Byung Hee
authors.initials: BH
authors.lastname: Hong
authors.forename: Philip
authors.initials: P
authors.lastname: Kim
authors.forename: Kilwon
authors.initials: K
authors.lastname: Cho
authors.forename: Kwang S
authors.initials: KS
authors.lastname: Kim
mesh_terms: D000588:Amines / Q000737:chemistry; D004553:Electric Conductivity; D006108:Graphite / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D000588:Amines; D010087:Oxides; D006108:Graphite; D012825:Silicon