title: Metal-insulator-semiconductor photodetectors.
abstract: The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
authors.affiliation: Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan. chlin0109@mail.ndhu.edu.tw
authors.forename: Chu-Hsuan
authors.initials: CH
authors.lastname: Lin
authors.forename: Chee Wee
authors.initials: CW
authors.lastname: Liu
mesh_terms: D004867:Equipment Design / Q000379:methods*; D006801:Humans; D038101:Insulator Elements; D008027:Light; D008670:Metals / Q000737:chemistry*; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors / Q000295:instrumentation*
chemical_list: D008670:Metals