title: Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.
abstract: A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
authors.affiliation: Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia. manaf@fke.utm.my
authors.forename: Abdul Manaf
authors.initials: AM
authors.lastname: Hashim
authors.forename: Farahiyah
authors.initials: F
authors.lastname: Mustafa
authors.forename: Shaharin Fadzli Abd
authors.initials: SF
authors.lastname: Rahman
authors.forename: Abdul Rahim Abdul
authors.initials: AR
authors.lastname: Rahman