title: Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
abstract: This study presents a novel approach for indirect integration of InAs nanowires on 2'' Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2'' Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2'' wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz.
authors.affiliation: Solid State Physics, Lund University, Lund, Sweden. sepideh.gorji@ftf.lth.se
authors.forename: Sepideh Gorji
authors.initials: SG
authors.lastname: Ghalamestani
authors.forename: Sofia
authors.initials: S
authors.lastname: Johansson
authors.forename: B Mattias
authors.initials: BM
authors.lastname: Borg
authors.forename: Erik
authors.initials: E
authors.lastname: Lind
authors.forename: Kimberly A
authors.initials: KA
authors.lastname: Dick
authors.forename: Lars-Erik
authors.initials: LE
authors.lastname: Wernersson