title: Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals.
abstract: We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5 μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5 μm emission band with an FWHM of 140 nm and lifetime of 213 μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.
authors.affiliation: Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China. su_lb@163.com
authors.forename: Liangbi
authors.initials: L
authors.lastname: Su
authors.forename: Hengyu
authors.initials: H
authors.lastname: Zhao
authors.forename: Hongjun
authors.initials: H
authors.lastname: Li
authors.forename: Lihe
authors.initials: L
authors.lastname: Zheng
authors.forename: Guohao
authors.initials: G
authors.lastname: Ren
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Witold
authors.initials: W
authors.lastname: Ryba-Romanowski
authors.forename: Radosław
authors.initials: R
authors.lastname: Lisiecki
authors.forename: Piotr
authors.initials: P
authors.lastname: Solarz