title: Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.
abstract: In this work, we report on the synthesis and the electrical properties of ZnO nanoparticles, which differ in their organic shell. The introduction of a 2-ethylhexanoate shell instead of a common acetate shell has an impact on the accessible size of the ZnO nanoparticles and changes the electrical properties of thin films in transistors. While acetate covered ZnO particles behave as a semiconductor with an electron mobility of 0.38 cm(2) V(-1) s(-1), the 2-ethylhexanoate ligand shell inhibits a charge transport resulting in insulating films (with an average ε(r) = 9.4). These films can be reconverted to semiconductive layers by removing the ligand shell with oxygen plasma treatment or they can be used as a solution processed dielectric layer in organic transistors. Its use as dielectric allows low voltage device operation and shows potential application as a charge storage layer as needed in non-volatile memory transistors.
authors.affiliation: Organic Materials & Devices, Dept. of Materials Science, University Erlangen-Nürnberg, Martensstraße 07, 91058, Erlangen, Germany. johannes.hirschmann@ww.uni-erlangen.de
authors.forename: Johannes
authors.initials: J
authors.lastname: Hirschmann
authors.forename: Hendrik
authors.initials: H
authors.lastname: Faber
authors.forename: Marcus
authors.initials: M
authors.lastname: Halik
mesh_terms: D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008024:Ligands; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D008024:Ligands; D008567:Membranes, Artificial; D015034:Zinc Oxide