title: Multilevel data storage memory using deterministic polarization control.
abstract: Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.
authors.affiliation: ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
authors.forename: Daesu
authors.initials: D
authors.lastname: Lee
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.forename: Tae Heon
authors.initials: TH
authors.lastname: Kim
authors.forename: Byung Chul
authors.initials: BC
authors.lastname: Jeon
authors.forename: Yong Su
authors.initials: YS
authors.lastname: Kim
authors.forename: Jong-Gul
authors.initials: JG
authors.lastname: Yoon
authors.forename: Ho Nyung
authors.initials: HN
authors.lastname: Lee
authors.forename: Seung Hyup
authors.initials: SH
authors.lastname: Baek
authors.forename: Chang Beom
authors.initials: CB
authors.lastname: Eom
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Noh
mesh_terms: D016248:Computer Storage Devices; D004553:Electric Conductivity