title: Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures.
abstract: The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.
authors.affiliation: Department of Physics, The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.
authors.forename: Chongqi
authors.initials: C
authors.lastname: Yu
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
mesh_terms: D004867:Equipment Design; D010087:Oxides / Q000737:chemistry*; D010777:Photochemistry / Q000379:methods; D012666:Semiconductors
chemical_list: D010087:Oxides