title: A high-performance quantum dot superluminescent diode with a two-section structure.
abstract: Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. pengjin@semi.ac.cn.
authors.forename: Xinkun
authors.initials: X
authors.lastname: Li
authors.forename: Peng
authors.initials: P
authors.lastname: Jin
authors.forename: Qi
authors.initials: Q
authors.lastname: An
authors.forename: Zuocai
authors.initials: Z
authors.lastname: Wang
authors.forename: Xueqin
authors.initials: X
authors.lastname: Lv
authors.forename: Heng
authors.initials: H
authors.lastname: Wei
authors.forename: Jian
authors.initials: J
authors.lastname: Wu
authors.forename: Ju
authors.initials: J
authors.lastname: Wu
authors.forename: Zhanguo
authors.initials: Z
authors.lastname: Wang