title: A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.
abstract: Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
authors.affiliation: Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, USA.
authors.forename: Kuk-Hwan
authors.initials: KH
authors.lastname: Kim
authors.forename: Siddharth
authors.initials: S
authors.lastname: Gaba
authors.forename: Dana
authors.initials: D
authors.lastname: Wheeler
authors.forename: Jose M
authors.initials: JM
authors.lastname: Cruz-Albrecht
authors.forename: Tahir
authors.initials: T
authors.lastname: Hussain
authors.forename: Narayan
authors.initials: N
authors.lastname: Srinivasa
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
mesh_terms: D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D018511:Systems Integration