title: Acoustically driven photon antibunching in nanowires.
abstract: The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at gigahertz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of antibunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany. alberto@pdi-berlin.de
authors.forename: A
authors.initials: A
authors.lastname: Hernández-Mínguez
authors.forename: M
authors.initials: M
authors.lastname: Möller
authors.forename: S
authors.initials: S
authors.lastname: Breuer
authors.forename: C
authors.initials: C
authors.lastname: Pfüller
authors.forename: C
authors.initials: C
authors.lastname: Somaschini
authors.forename: S
authors.initials: S
authors.lastname: Lazić
authors.forename: O
authors.initials: O
authors.lastname: Brandt
authors.forename: A
authors.initials: A
authors.lastname: García-Cristóbal
authors.forename: M M
authors.initials: MM
authors.lastname: de Lima
authors.forename: A
authors.initials: A
authors.lastname: Cantarero
authors.forename: L
authors.initials: L
authors.lastname: Geelhaar
authors.forename: H
authors.initials: H
authors.lastname: Riechert
authors.forename: P V
authors.initials: PV
authors.lastname: Santos
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects*; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D010316:Particle Size; D017785:Photons; D013010:Sonication; D013499:Surface Properties / Q000528:radiation effects
chemical_list: D001152:Arsenicals; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium