title: Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.
abstract: We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 × 10(10) cm(-2) to 1.8 × 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(τ = 0) = 0.06 ± 0.03) as expected for a single-photon emitter. The described growth routine has great promise for the exploitation of InP QDs as quantum emitters.
authors.affiliation: Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Würzburg, Germany.
authors.forename: R
authors.initials: R
authors.lastname: Rödel
authors.forename: A
authors.initials: A
authors.lastname: Bauer
authors.forename: S
authors.initials: S
authors.lastname: Kremling
authors.forename: S
authors.initials: S
authors.lastname: Reitzenstein
authors.forename: S
authors.initials: S
authors.lastname: Höfling
authors.forename: M
authors.initials: M
authors.lastname: Kamp
authors.forename: L
authors.initials: L
authors.lastname: Worschech
authors.forename: A
authors.initials: A
authors.lastname: Forchel