title: Magnetoresistance switch effect of a Sn-doped Bi₂ Te₃ topological insulator.
authors.affiliation: Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, China.
authors.forename: Hong Bin
authors.initials: HB
authors.lastname: Zhang
authors.forename: Hai Lin
authors.initials: HL
authors.lastname: Yu
authors.forename: Ding Hua
authors.initials: DH
authors.lastname: Bao
authors.forename: Shu Wei
authors.initials: SW
authors.lastname: Li
authors.forename: Cheng Xin
authors.initials: CX
authors.lastname: Wang
authors.forename: Guo Wei
authors.initials: GW
authors.lastname: Yang
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D004566:Electrodes; D060526:Magnetic Fields; D012666:Semiconductors; D013691:Tellurium / Q000737:chemistry*; D014001:Tin / Q000737:chemistry*
chemical_list: C542787:bismuth telluride; D014001:Tin; D013691:Tellurium; D001729:Bismuth