title: Electron trapping in InP nanowire FETs with stacking faults.
abstract: Semiconductor III-V nanowires are promising components of future electronic and optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure. Here we show, theoretically and experimentally, that the crystal structure dominates the conductivity in such InP nanowires. Undoped devices show very low conductivities and mobilities. The zincblende segments are quantum wells orthogonal to the current path and our calculations indicate that an electron concentration of up to 4.6 × 10(18) cm(-3) can be trapped in these. The calculations also show that the room temperature conductivity is controlled by the longest zincblende segment, and that stochastic variations in this length lead to an order of magnitude variation in conductivity. The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors.
authors.affiliation: Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. jesper.wallentin@ftf.lth.se
authors.forename: Jesper
authors.initials: J
authors.lastname: Wallentin
authors.forename: Martin
authors.initials: M
authors.lastname: Ek
authors.forename: L Reine
authors.initials: LR
authors.lastname: Wallenberg
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
mesh_terms: D003198:Computer Simulation; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D010720:Phosphines; D007204:Indium; C090882:indium phosphide