title: Compound semiconductor nanotube materials grown and fabricated.
abstract: A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductor nanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 μm, were achieved through normal device fabrication.
authors.affiliation: Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China. likunai@mail.sim.ac.cn.
authors.forename: Likun
authors.initials: L
authors.lastname: Ai
authors.forename: Anhuai
authors.initials: A
authors.lastname: Xu
authors.forename: Teng
authors.initials: T
authors.lastname: Teng
authors.forename: Jiebin
authors.initials: J
authors.lastname: Niu
authors.forename: Hao
authors.initials: H
authors.lastname: Sun
authors.forename: Ming
authors.initials: M
authors.lastname: Qi