title: Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate.
abstract: In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.
authors.affiliation: Department of Electrical Engineering, Korea University, Seoul 136-713, Korea. kky0819@korea.ac.kr
authors.forename: Kiyeol
authors.initials: K
authors.lastname: Kwak
authors.forename: Kyoungah
authors.initials: K
authors.lastname: Cho
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim
mesh_terms: D053770:Nanowires / Q000737:chemistry*; D010969:Plastics / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D010969:Plastics; D015034:Zinc Oxide; D012825:Silicon