title: Semiconducting polymer photodetectors with electron and hole blocking layers: high detectivity in the near-infrared.
abstract: Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 10(13) cm Hz(1/2)/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.
authors.affiliation: Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106-5090, USA. xgong@physics.ucsb.edu
authors.forename: Xiong
authors.initials: X
authors.lastname: Gong
authors.forename: Ming-Hong
authors.initials: MH
authors.lastname: Tong
authors.forename: Sung Heum
authors.initials: SH
authors.lastname: Park
authors.forename: Michelle
authors.initials: M
authors.lastname: Liu
authors.forename: Alex
authors.initials: A
authors.lastname: Jen
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Heeger
mesh_terms: D004583:Electrons; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D011108:Polymers