title: Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.
abstract: Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
authors.affiliation: Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy. maurizio.casalino@na.imm.cnr.it
authors.forename: Maurizio
authors.initials: M
authors.lastname: Casalino
authors.forename: Giuseppe
authors.initials: G
authors.lastname: Coppola
authors.forename: Mario
authors.initials: M
authors.lastname: Iodice
authors.forename: Ivo
authors.initials: I
authors.lastname: Rendina
authors.forename: Luigi
authors.initials: L
authors.lastname: Sirleto
mesh_terms: D015502:Absorptiometry, Photon; D015374:Biosensing Techniques / Q000295:instrumentation; D004526:Efficiency; D007259:Infrared Rays; D055095:Optics and Photonics / Q000295:instrumentation* / Q000379:methods / Q000592:standards / Q000639:trends; D017785:Photons; D012825:Silicon / Q000737:chemistry*; D019265:Spectroscopy, Near-Infrared / Q000295:instrumentation
chemical_list: D012825:Silicon