title: Topological insulator quantum dot with tunable barriers.
abstract: Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
authors.affiliation: Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA.
authors.forename: Sungjae
authors.initials: S
authors.lastname: Cho
authors.forename: Dohun
authors.initials: D
authors.lastname: Kim
authors.forename: Paul
authors.initials: P
authors.lastname: Syers
authors.forename: Nicholas P
authors.initials: NP
authors.lastname: Butch
authors.forename: Johnpierre
authors.initials: J
authors.lastname: Paglione
authors.forename: Michael S
authors.initials: MS
authors.lastname: Fuhrer
mesh_terms: D004553:Electric Conductivity; D004574:Electromagnetic Fields; D008422:Materials Testing; D045663:Quantum Dots; D012666:Semiconductors