title: Diode-pumped passively mode-locked Nd:YAG laser at 1338 nm with a semiconductor saturable absorber mirror.
abstract: We demonstrate a diode-end-pumped passively mode-locked 1338 nm Nd:YAG laser with a semiconductor saturable absorber mirror. At the absorbed pump power of 8.89 W, an average output power of 1.12 W was obtained with a slope efficiency of 14%. The pulse width was 22.4 ps with a repetition rate of 63.9 MHz, corresponding to a peak power of 782 W. In addition, the bandwidth of the mode-locking spectrum is as narrow as 20.44 GHz, which shows the potential application in long-distance ranging and fiber information transmission because of the low dispersion of these ultrashort pulses.
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, Ji’nan, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Yang
authors.forename: Jin-Long
authors.initials: JL
authors.lastname: Xu
authors.forename: Jing-Liang
authors.initials: JL
authors.lastname: He
authors.forename: Xiu-Qin
authors.initials: XQ
authors.lastname: Yang
authors.forename: Bing-Yuan
authors.initials: BY
authors.lastname: Zhang
authors.forename: He
authors.initials: H
authors.lastname: Yang
authors.forename: Shan-De
authors.initials: SD
authors.lastname: Liu
authors.forename: Bai-Tao
authors.initials: BT
authors.lastname: Zhang