title: High-performance low-voltage organic field-effect transistors prepared on electro-polished aluminum wires.
abstract: We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al(2)O(3) gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al(2)O(3) gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm(-2) and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm(2) V(-1) s(-1) within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius ~2.2.
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Yongin, 449-712, Republic of Korea.
authors.forename: Sooji
authors.initials: S
authors.lastname: Nam
authors.forename: Jaeyoung
authors.initials: J
authors.lastname: Jang
authors.forename: Jong-Jin
authors.initials: JJ
authors.lastname: Park
authors.forename: Sang Won
authors.initials: SW
authors.lastname: Kim
authors.forename: Chan Eon
authors.initials: CE
authors.lastname: Park
authors.forename: Jong Min
authors.initials: JM
authors.lastname: Kim