title: Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors.
abstract: This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on band bending at the Schottky barriers will be shown.
authors.affiliation: Namlab gGmbH, Dresden, Germany. dominik.martin@namlab.com
authors.forename: Dominik
authors.initials: D
authors.lastname: Martin
authors.forename: Andre
authors.initials: A
authors.lastname: Heinzig
authors.forename: Matthias
authors.initials: M
authors.lastname: Grube
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.forename: Thomas
authors.initials: T
authors.lastname: Mikolajick
authors.forename: Henning
authors.initials: H
authors.lastname: Riechert
authors.forename: Walter M
authors.initials: WM
authors.lastname: Weber