title: n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays.
abstract: A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D heterojunction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.
authors.affiliation: World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. ZHANG.Xiaomei@nims.go.jp
authors.forename: Xiao-Mei
authors.initials: XM
authors.lastname: Zhang
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Naoki
authors.initials: N
authors.lastname: Fukata