title: Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions.
abstract: We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.
authors.affiliation: Physikalisches Institut EP3, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: Ts
authors.initials: Ts
authors.lastname: Naydenova
authors.forename: P
authors.initials: P
authors.lastname: Dürrenfeld
authors.forename: K
authors.initials: K
authors.lastname: Tavakoli
authors.forename: N
authors.initials: N
authors.lastname: Pégard
authors.forename: L
authors.initials: L
authors.lastname: Ebel
authors.forename: K
authors.initials: K
authors.lastname: Pappert
authors.forename: K
authors.initials: K
authors.lastname: Brunner
authors.forename: C
authors.initials: C
authors.lastname: Gould
authors.forename: L W
authors.initials: LW
authors.lastname: Molenkamp