title: Inhibited spontaneous emission of quantum dots observed in a 3D photonic band gap.
abstract: We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the emission frequency. The decay rates averaged over all dipole orientations are inhibited by a factor of 10 in the photonic band gap and enhanced up to 2× outside the gap, in agreement with theory. We discuss the effects of spatial inhomogeneity, nonradiative decay, and transition dipole orientations on the observed inhibition in the band gap.
authors.affiliation: Complex Photonic Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.
authors.forename: M D
authors.initials: MD
authors.lastname: Leistikow
authors.forename: A P
authors.initials: AP
authors.lastname: Mosk
authors.forename: E
authors.initials: E
authors.lastname: Yeganegi
authors.forename: S R
authors.initials: SR
authors.lastname: Huisman
authors.forename: A
authors.initials: A
authors.lastname: Lagendijk
authors.forename: W L
authors.initials: WL
authors.lastname: Vos
mesh_terms: D055095:Optics and Photonics / Q000295:instrumentation*; D017785:Photons; D045663:Quantum Dots; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017655:Silicon Compounds